Antiferromagnetic ordering in Co-Cu single-crystal superlattices

Electrodeposited Epitaxial Cu(100) on Si(100) and Lift-Off of Single Crystal-like Cu(100) Foils

A two-step potential electrodeposition technique is described which gives epitaxial films of Cu(100) on n-Si(100). Nucleation of epitaxial seeds occurs at -1.5 V_Ag/AgCl, whereas the film is grown at -0.5 V_Ag/AgCl. Cu deposition occurs with a Faradaic efficiency of 82.0% as determined spectrophotometrically. Epitaxy is achieved through a 45° in-plane rotation of Cu with respect to Si, which is shown by X-ray analysis. The 45° rotation reduces the lattice mismatch from -33.43% for an unrotated film to -5.86% for a 45° rotated film. Mosaicity, as determined via X-ray rocking curves, decreases with increasing thickness, going from a full width at half maximum of 3.99° for a 30 nm thick film to 1.67° for a 160 nm thick film. This translates to an increasing quality of epitaxy with increasing thickness. High resolution transmission electron microscopy imaging shows an amorphous SiO _x interlayer between Cu and Si. Etching of SiO _x with 5% HF allows epitaxial lift-off of the copper film, giving single crystal-like Cu(100) foils. Cu(100) films and single crystal-like foils have potential to be used as catalysts for CO₂ reduction, substrates for technologically important materials like spintronic multilayer magnetic stacks and high temperature superconductors, and as active surfaces toward galvanic replacement by platinum group elements. Additionally, the foils could be used as single crystal-like substrates for flexible electronics.

Spin-Dependent Hybridization between Molecule and Metal at Room Temperature through Interlayer Exchange Coupling

We experimentally and theoretically show that the magnetic coupling at room temperature between paramagnetic Mn within manganese phthalocyanine molecules and a Co layer persists when separated by a Cu spacer. The molecule's magnetization amplitude and direction can be tuned by varying the Cu-spacer thickness and evolves according to an interlayer exchange coupling mechanism. Ab initio calculations predict a highly spin-polarized density of states at the Fermi level of this metal-molecule interface, thereby strengthening prospective spintronics applications.

Oscillatory Indirect Coupling Between Perpendicularly Magnetized Co Monolayers Through Cu (111)

Co-Monolayers, prepared by MBE on Cu (111) -surfaces at room temperature and covered by Cu, are ferromagnetic with a Curie-temperature of about 430 K. They are magnetized perpendicularly because of a strong perpendicular magnetic surface anisotropy of the Cu/Co (111) -interface. They provide a remarkably good representation of the 2-dimensional Ising Model. The indirect coupling between these perpendicularly magnetized ferromagnetic monolayers was investigated using samples of type Cu (111) /lCo/DçuCu/lCo/Cu, containing Co/Cu/Co-trilayers composed of Co-Monolayers and a spacer consisting of DCu atomic layers of Cu (111). Torsion oscillation magnetometry of these samples showed clearly a coupling between the monolayers with an oscillatory dependence on DCu. The amplitude of the oscillation is strongly reduced if the coupled Co-films consist of 5 ML instead of 1 M.L. The present controversy on the presence or absence of antiferromagnetic and oscillatory indirect coupling in the Co/Cu (111) -system is discussed in the light of these experiments. The discussion shows that the oscillatory coupling is an intrinsic property of ideal (111)-structures, and can be understood by the RKKY-type theory of indirect coupling between ferromagnetic Monolayers. The usual application of this theory to the coupling between thicker films is justified. However, in the fcc (111) -system there is apparently a specific barrier against complete coalescence, resulting in a tendency to retain holes and channels in the Cu-spacer. This tendency is stronger in flat single-crystal samples than in sputtered films with high densities of atomic steps. Apparently, this results in competing ferromagnetic hole coupling which may more or less completely obscure the intrinsic oscillatory coupling, preferentially in samples grown on extremely flat single crystal surfaces.

Calculation of Magnetization Processes in Multilayers with Antiferromagnetic Coupling between Adjacent Layers

This paper presents calculations of hysteresis loops in ferromagnetic multilayer systems of cubic or uniaxial anisotropy with antiferromagnetic coupling between adjacent layers. The case of a bilayer has been systematically studied as a function of the strenght of the anisotropy. The two limiting cases corresponding to either a coherent rotation of the magnetization or to a non-dissipative nucleation-propagation mechanism are investigated. The influence of the number of layers is also discussed.

Temperature-induced reversal of magnetic interlayer exchange coupling

For epitaxial trilayers of the magnetic rare-earth metals Gd and Tb, exchange coupled through a nonmagnetic Y spacer layer, element-specific hysteresis loops were recorded by the x-ray magneto-optical Kerr effect at the rare-earth M5 thresholds. This allowed us to quantitatively determine the strength of interlayer exchange coupling (IEC). In addition to the expected oscillatory behavior as a function of spacer-layer thickness dY, a temperature-induced sign reversal of IEC was observed for constant dY, arising from magnetization-dependent electron reflectivities at the magnetic interfaces.

The 2007 Nobel Prize in Physics: magnetism and transport at the nanoscale

The 2007 Nobel Prize in Physics was awarded to Peter Grünberg and Albert Fert for the discovery of giant magnetoresistance (GMR). GMR is a phenomenon that is intimately linked to the nanostructuring of magnetic materials and has had broad scientific and economic impact. Here, we summarize the early scientific studies of magnetic thin films and superlattices that enabled the discovery of GMR, and we describe the evolution of spin-electronics (spintronics) that has emerged since its discovery.

Spin-polarized resonant tunneling in magnetic tunnel junctions

Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling. The amplitude of the oscillation is so large that even the sign of the tunnel magnetoresistance alternates. The oscillation period depends on the applied bias voltage, reflecting the energy band structure of Cu. The results are encouraging for the development of spin-dependent resonant tunneling devices.

One-dimensional spin-polarized quantum-wire states in Au on Ni(110)

Au chain structures have been prepared on Ni(110). Au6 s,p-derived features in photoemission spectra are identified as quantum-wire states due to their strong dispersion along the chains and absence of dispersion perpendicular to the chains in agreement with our ab initio calculation of the electronic structure. Spin analysis reveals that the states have minority-spin character showing that the confinement of electrons in the chain structure depends on the electron spin.