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Ji YH, Gao Q, Huang AP, Yang MQ, Liu YQ, Geng XL, Zhang JJ, Wang RZ, Wang M, Xiao ZS, Chu PK. GaO x@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41916-41925. [PMID: 34448583 DOI: 10.1021/acsami.1c13355] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexible optoelectronic synaptic devices that functionally imitate the neural behavior with tunable optoelectronic characteristics are crucial to the development of advanced bioinspired neural networks. In this work, amorphous oxide-decorated GaN nanowire arrays (GaOx@GaN NWAs) are prepared on flexible graphite paper. A GaOx@GaN NWA-based flexible device has tunable persistent photoconductivity (PPC) and shows a conversible fast/slow decay process (SDP). Photoconductivity can be modulated by single or double light pulses with different illumination powers and biases. PPC gives rise to the high-performance SDP such as a long decay time of 2.3 × 105 s. The modulation mechanism is proposed and discussed. Our results reveal an innovative and efficient strategy to produce decorated NWAs on a flexible substrate with tunable optoelectronic properties and exhibit potential for flexible neuromorphic system applications.
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Affiliation(s)
- Yu-Hang Ji
- School of Physics, Beihang University, Beijing 100191, China
| | - Qin Gao
- School of Physics, Beihang University, Beijing 100191, China
| | - An-Ping Huang
- School of Physics, Beihang University, Beijing 100191, China
| | - Meng-Qi Yang
- Institute of New Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yan-Qi Liu
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 999077, China
| | - Xue-Li Geng
- School of Physics, Beihang University, Beijing 100191, China
| | - Jing-Jing Zhang
- School of Physics, Beihang University, Beijing 100191, China
| | - Ru-Zhi Wang
- Institute of New Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Mei Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Zhi-Song Xiao
- School of Physics, Beihang University, Beijing 100191, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon 518057, Hong Kong, China
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Li JZ, Lin JY, Jiang HX, Khan MA, Chen Q, Salvador A, Botchkarev A, Morkoc H. Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-449-537] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTPersistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.
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Wickenden AE, Beadie G, Koleske DD, Rabinovich WS, Freitas JA. Persistent Photoconductivity in n-Type GaN. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-449-531] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTPersistent photoconductivity has been observed in n-type Si-doped GaN grown on sapphire substrates by metalorganic vapor phase epitaxy. The effect has been seen both in films which are of electrically high quality, based on low temperature photoluminescence (PL) and Hall analysis, and in films which either appear to be compensated or which exhibit strong donor-acceptor pair recombination. The photoconductivity has been observed to persist for several days at room temperature (300K). Modeling of the resistance recovery by a stretched exponential treatment may suggest a distribution of deep level defect centers in the Si-doped GaN films.
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Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers. ACTA ACUST UNITED AC 2000. [DOI: 10.1116/1.591368] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Smith M, Lin JY, Jiang HX. Disorder and persistent photoconductivity in ZnxCd1-xSe semiconductor alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:1471-1473. [PMID: 9985975 DOI: 10.1103/physrevb.54.1471] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Schmidt TM, Fazzio A, Caldas MJ. Germanium negative-U center in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:1315-1321. [PMID: 9983590 DOI: 10.1103/physrevb.53.1315] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dissanayake AS, Lin JY, Jiang HX. Persistent photoconductivity in Zn0.04Cd0.96Te semiconductor thin films. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8145-8151. [PMID: 10007004 DOI: 10.1103/physrevb.48.8145] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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