Interband absorption in quantum wires. I. Zero-magnetic-field case

Ultrafast transverse and longitudinal response of laser-excited quantum wires

We couple 1D pulse propagation simulations with laser-solid dynamics in a GaAs quantum wire, solving for the electron and hole populations and the interband and intraband coherences between states. We thus model not only the dynamical dipole contributions to the optical polarization (interband bound-charge response) but also the photo-generation and back-action effects of the net free-charge density (intraband free-charge response). These results show that solving for the dynamic electron and hole intraband coherences leads to plasma oscillations at THz frequencies, even in a 1D solid where plasma screening is small. We then calculate the transverse and longitudinal response of the quantum wire and characterize the dispersion relation for the e-h plasma. This approach allows one to predict the optoelectronic response of 1D semiconductor devices during and after exposure to resonant ultrashort pulses.

Highly Polarized Single Photons from Strain-Induced Quasi-1D Localized Excitons in WSe2

Single photon emission from localized excitons in two-dimensional (2D) materials has been extensively investigated because of its relevance for quantum information applications. Prerequisites are the availability of photons with high purity polarization and controllable polarization orientation that can be integrated with optical cavities. Here, deformation strain along edges of prepatterned square-shaped substrate protrusions is exploited to induce quasi-one-dimensional (1D) localized excitons in WSe₂ monolayers as an elegant way to get photons that fulfill these requirements. At zero magnetic field, the emission is linearly polarized with 95% purity because exciton states are valley hybridized with equal shares of both valleys and predominant emission from excitons with a dipole moment along the elongated direction. In a strong field, one valley is favored and the linear polarization is converted to high-purity circular polarization. This deterministic control over polarization purity and orientation is a valuable asset in the context of integrated quantum photonics.

Controlling quantum-dot light absorption and emission by a surface-plasmon field

The possibility for controlling both the probe-field optical gain and absorption, as well as photon conversion by a surface-plasmon-polariton near field is explored for a quantum dot located above a metal surface. In contrast to the linear response in the weak-coupling regime, the calculated spectra show an induced optical gain and a triply-split spontaneous emission peak resulting from the interference between the surface-plasmon field and the probe or self-emitted light field in such a strongly-coupled nonlinear system. Our result on the control of the mediated photon-photon interaction, very similar to the 'gate' control in an optical transistor, may be experimentally observable and applied to ultra-fast intrachip/interchip optical interconnects, improvement in the performance of fiber-optic communication networks, and developments of optical digital computers and quantum communications.

Direct Measurement of Single CdSe Nanowire Extinction Polarization Anisotropies

The origin of sizable absorption polarization anisotropies (ρabs) in one-dimensional (1D) semiconductor nanowires (NWs) has been debated. Invoked explanations employ either classical or quantum mechanical origins, where the classical approach suggests dielectric constant mismatches between the NW and its surrounding environment as the predominant source of observed polarization sensitivities. At the same time, the confinement-influenced mixing of states suggests a sizable contribution from polarization-sensitive transition selection rules. Sufficient evidence exists in the literature to support either claim. However, in all cases, these observations stem from excitation polarization anisotropy (ρexc) studies, which only indirectly measure ρabs. In this manuscript, we directly measure the band edge extinction polarization anisotropies (ρext) of individual CdSe NWs using single NW extinction spectroscopy. Observed polarization anisotropies possess distinct spectral features and wavelength dependencies that correlate well with theoretical transition selection rules derived from a six-band k·p theory used to model the electronic structure of CdSe NWs.

Dynamic switching of hole character and single photon polarization using the quantum confined Stark effect in quantum dot-in-dot structures

The engineering of the three-dimensional (3D) heterostructure potential in GaAs/AlGaAs pyramidal quantum dot-in-dots (DiDs) provides control over the valence band symmetry and hence on the polarization of the emitted photons. We propose a technique for dynamic switching of hole character and photon polarization in DiDs by means of an applied electric field. The structural parameters required for producing this effect are discussed. Asymmetric DiDs are found to be particularly suitable for obtaining switching with fields smaller than 1 kV cm( - 1). The proposed device enables generation of single photons with dynamic control on the photon polarization, with potential applications in quantum information technology.

Markovian and non-Markovian light-emission channels in strained quantum wires

We have achieved conditions to obtain optical memory effects in semiconductor nanostructures. The system is based on strained InP quantum wires where the tuning of the heavy-light valence band splitting has allowed the existence of two independent optical channels with correlated and uncorrelated excitation and light-emission processes. The presence of an optical channel that preserves the excitation memory is unambiguously corroborated by photoluminescence measurements of free-standing quantum wires under different configurations of the incoming and outgoing light polarizations in various samples. High-resolution transmission electron microscopy and electron diffraction indicate the presence of strain effects in the optical response. By using this effect and under certain growth conditions, we have shown that the optical recombination is mediated by relaxation processes with different natures: one a Markov and another with a non-Markovian signature. Resonance intersubband light-heavy hole transitions assisted by optical phonons provide the desired mechanism for the correlated non-Markovian carrier relaxation process. A multiband calculation for strained InP quantum wires was developed to account for the description of the character of the valence band states and gives quantitative support for light hole-heavy hole transitions assisted by optical phonons.

Polarized photoluminescence from single GaN nanorods: effects of optical confinement

By measuring linearly polarized photoluminescence (PL) from single, isolated gallium nitride (GaN) nanorods with the rod diameters in the subwavelength regime (30-90 nm), we present clear evidence for size dependence of polarization anisotropy. The maximum polarization ratio at room temperature (approximately 0.9 with emission and excitation light polarized parallel to the long axis of nanorod) occurs at the rod diameter of approximately 40 nm. The experimental data are compared with the recent theoretical model proposed for thick semiconductor nanowires. It is concluded that the optical confinement effects in this size regime play an important role in the observed giant polarization anisotropy. Furthermore, we have performed a temperature-dependent study of polarized PL to show the importance of internal emission anisotropy at low temperatures.

Transition from two-dimensional to three-dimensional quantum confinement in semiconductor quantum wires/quantum dots

We report the photoluminescence (PL) and polarization-resolved PL characteristics of a novel GaAs/AlGaAs quantum wire/dot semiconductor system, realized by metalorganic vapor-phase epitaxy of site-controlled, self-assembled nanostructures in inverted tetrahedral pyramids. By systematically changing the length of the quantum wires, we implement a continuous transition between the regimes of two-dimensional and three-dimensional quantum confinement. The two main evidences for this transition are observed experimentally and confirmed theoretically: (i) strongly blue-shifted ground-state emission, accompanied by increase separation of ground and excited transition energies; and (ii) change in the orientation of the main axis of linear polarization of the photoluminescence, from parallel to perpendicular with respect to the wire axis. This latter effect, whose origin is shown to be purely due to quantum confinement and valence band mixing, sets in at wire lengths of only approximately 30 nm.

Exciton and biexciton fine structure in single elongated islands grown on a vicinal surface

We report a microphotoluminescence study of the exciton and the biexciton localized in very elongated islands formed by well-width fluctuations in a thin CdTe/CdMgTe quantum well grown on a vicinal surface. The electron-hole exchange interaction in a local reduced symmetry splits the exciton states. The resulting transitions are linearly polarized along the two orthogonal principal axes of the island. The valence band mixing induced by the elongated shape of the potential leads to a strong polarization anisotropy and to the observation of dark exciton states under magnetic field. The biexciton-exciton transition reproduces all the fine structure of the exciton state including the transition of the biexciton to the dark exciton state.