Calculation of the residual resistivity and the thermoelectric power of sp impurities in silver

Grain boundary engineering for improved thin silicon photovoltaics

In photovoltaic devices, the bulk disorder introduced by grain boundaries (GBs) in polycrystalline silicon is generally considered to be detrimental to the physical stability and electronic transport of the bulk material. However, at the extremum of disorder, amorphous silicon is known to have a beneficially increased band gap and enhanced optical absorption. This study is focused on understanding and utilizing the nature of the most commonly encountered Σ3 GBs, in an attempt to balance incorporation of the advantageous properties of amorphous silicon while avoiding the degraded electronic transport of a fully amorphous system. A combination of theoretical methods is employed to understand the impact of ordered Σ3 GBs on the material properties and full-device photovoltaic performance.

Effect of short-range order on transport in one-particle tight-binding models

We investigate transport properties of topologically disordered three-dimensional one-particle tight-binding models, featuring site-distance-dependent hopping terms. We start from entirely disordered systems into which we gradually introduce some short-range order by numerically performing a pertinent structural relaxation using local site-pair interactions. Transport properties of the resulting models within the delocalized regime are analyzed numerically using linear response theory. We find that even though the generated order is very short ranged, transport properties such as conductivity or mean free path scale significantly with the degree of order. Mean free paths may exceed the site-pair correlation length. It is furthermore demonstrated that while the totally disordered model is not in accord with a Drude- or Boltzmann-type description, moderate degrees of order suffice to render such a picture valid.

Transport in topologically disordered one-particle, tight-binding models

We aim at quantitatively determining transport parameters like conductivity, mean free path, etc., for simple models of spatially completely disordered quantum systems, comparable to the systems which are sometimes referred to as Lifshitz models. While some low-energy eigenstates in such models always show Anderson localization, we focus on models for which most states of the full spectrum are delocalized, i.e., on the metallic regime. For the latter we determine transport parameters in the limit of high temperatures and low fillings using linear response theory. The Einstein relation (proportionality of conductivity and diffusion coefficient) is addressed numerically and analytically and found to hold. Furthermore, we find the transport behavior for some models to be in accord with a Boltzmann equation, i.e., rather long mean free paths, exponentially decaying currents, while this does not apply to other models even though they are also almost completely delocalized.

Thermoelectric transport in strained Si and Si/Ge heterostructures

The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor. Electron and hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. For the thermoelectrically more important high-temperature and high-doping regime a slight enhancement of the power factor was only found under small compressive strain with the power factor overall being robust against applied strain. To extend our findings the anisotropic thermoelectric transport of a [111]-oriented Si/Ge superlattice was investigated. Here, the cross-plane power factor under hole doping was drastically suppressed due to quantum-well effects, while under electron doping an enhanced power factor was found. For this, we state figures of merit of ZT = 0.2 and 1.4 at T = 300 and 900 K for the electron-doped [111]-oriented Si/Ge superlattice. All results are discussed in terms of band structure features.

Modeling of interface roughness in thermoelectric composite materials

We use a network model to calculate the influence of the mesoscopic interface structure on the thermoelectric properties of superlattice structures consisting of alternating layers of materials A and B. The thermoelectric figure of merit of such a composite material depends on the layer thickness, if interface resistances are accounted for, and can be increased by proper interface design. In general, interface roughness reduces the figure of merit, again compared to the case of ideal interfaces. However, the strength of this reduction depends strongly on the type of interface roughness. Smooth atomic surface diffusion leading to alloying of materials A and B causes the largest reduction of the figure of merit. Consequently, in real structures, it is important not only to minimize interface roughness, but also to control the type of roughness. Although the microscopic effects of interfaces are only empirically accounted for, using a network model can yield useful information about the dependence of the macroscopic transport coefficients on the mesoscopic disorder in structured thermoelectric materials.

Effect of strain on the thermoelectric properties of silicon: an ab initio study

On the basis of detailed first-principles calculations the anisotropic thermoelectric transport properties of biaxially strained silicon were studied with the focus on a possible enhancement of the power factor. Electron as well as hole doping was examined in a broad doping and temperature range. In the low temperature and low doping regime an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case, and for compressive strain in the hole-doped case. In the thermoelectrically more important high temperature and high doping regime a slight enhancement of the power factor was only found for the hole-doped case under small biaxial tensile strain. The results are discussed in terms of band structure effects. An analytical model is presented to understand the fact that the thermopower decreases if degenerate bands are energetically lifted due to a strain-induced redistribution of states.