Calculated structural phase transitions of aluminum nitride under pressure

Stress-controlled decomposition routes in cubic AlCrN films assessed by in-situ high-temperature high-energy grazing incidence transmission X-ray diffraction

The dependence of decomposition routes on intrinsic microstructure and stress in nanocrystalline transition metal nitrides is not yet fully understood. In this contribution, three Al_0.7Cr_0.3N thin films with residual stress magnitudes of −3510, −4660 and −5930 MPa in the as-deposited state were in-situ characterized in the range of 25–1100 °C using in-situ synchrotron high-temperature high-energy grazing-incidence-transmission X-ray diffraction and temperature evolutions of phases, coefficients of thermal expansion, structural defects, texture as well as residual, thermal and intrinsic stresses were evaluated. The multi-parameter experimental data indicate a complex intrinsic stress and phase changes governed by a microstructure recovery and phase transformations taking place above the deposition temperature. Though the decomposition temperatures of metastable cubic Al_0.7Cr_0.3N phase in the range of 698–914 °C are inversely proportional to the magnitudes of deposition temperatures, the decomposition process itself starts at the same stress level of ~−4300 MPa in all three films. This phenomenon indicates that the particular compressive stress level functions as an energy threshold at which the diffusion driven formation of hexagonal Al(Cr)N phase is initiated, provided sufficient temperature is applied. In summary, the unique synchrotron experimental setup indicated that residual stresses play a decisive role in the decomposition routes of nanocrystalline transition metal nitrides.

Semi-Empirical Force-Field Model for the Ti1-xAlxN (0 ≤ x ≤ 1) System

We present a modified embedded atom method (MEAM) semi-empirical force-field model for the Ti1-xAlxN (0 ≤ x ≤ 1) alloy system. The MEAM parameters, determined via an adaptive simulated-annealing (ASA) minimization scheme, optimize the model's predictions with respect to 0 K equilibrium volumes, elastic constants, cohesive energies, enthalpies of mixing, and point-defect formation energies, for a set of ≈40 elemental, binary, and ternary Ti-Al-N structures and configurations. Subsequently, the reliability of the model is thoroughly verified against known finite-temperature thermodynamic and kinetic properties of key binary Ti-N and Al-N phases, as well as properties of Ti1-xAlxN (0 < x < 1) alloys. The successful outcome of the validation underscores the transferability of our model, opening the way for large-scale molecular dynamics simulations of, e.g., phase evolution, interfacial processes, and mechanical response in Ti-Al-N-based alloys, superlattices, and nanostructures.

Structure prediction of aluminum nitride combining data mining and quantum mechanics

This study covers the experimentally observed modifications of AlN, investigates their relations and searches for new possible modifications combining data mining and ab initio methods.

Temperature dependence of the electronic structure of semiconductors and insulators

The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure.

Structural and mechanical evolution of reactively and non-reactively sputtered Zr-Al-N thin films during annealing

The influence of reactive and non-reactive sputtering on structure, mechanical properties, and thermal stability of Zr1 - xAlxN thin films during annealing to 1500 °C is investigated in detail. Reactive sputtering of a Zr0.6Al0.4 target leads to the formation of Zr0.66Al0.34N thin films, mainly composed of supersaturated cubic (c) Zr1 - xAlxN with small fractions of (semi-)coherent wurtzite (w) AlN domains. Upon annealing, the formation of cubic Zr-rich domains and growth of the (semi-)coherent w-AlN domains indicate spinodal-like decomposition. Loss of coherency can only be observed for annealing temperatures above 1150 °C. Following these decomposition processes, the hardness remains at the as-deposited value of ~ 29 GPa with annealing up to 1100 °C. Using a ceramic (ZrN)0.6(AlN)0.4 target and sputtering in Ar atmosphere allows preparing c-Zr0.68Al0.32N coatings with a well-defined crystalline single-phase cubic structure combined with higher hardnesses of ~ 31 GPa. Due to the absence of (semi-)coherent w-AlN domains in the as-deposited state, which could act as nucleation sites, the decomposition process of c-Zr1 - xAlxN is retarded. Only after annealing at 1270 °C, the formation of incoherent w-AlN can be detected. Hence, their hardness remains very high with ~ 33 GPa even after annealing at 1200 °C. The study highlights the importance of controlling the deposition process to prepare well-defined coatings with high mechanical properties and thermal stability.

Phase Stability and Elasticity of TiAlN

We review results of recent combined theoretical and experimental studies of Ti_1−xAl_xN, an archetypical alloy system material for hard-coating applications. Theoretical simulations of lattice parameters, mixing enthalpies, and elastic properties are presented. Calculated phase diagrams at ambient pressure, as well as at pressure of 10 GPa, show a wide miscibility gap and broad region of compositions and temperatures where the spinodal decomposition takes place. The strong dependence of the elastic properties and sound wave anisotropy on the Al-content offers detailed understanding of the spinodal decomposition and age hardening in Ti_1−xAl_xN alloy films and multilayers. TiAlN/TiN multilayers can further improve the hardness and thermal stability compared to TiAlN since they offer means to influence the kinetics of the favorable spinodal decomposition and suppress the detrimental transformation to w-AlN. Here, we show that a 100 degree improvement in terms of w-AlN suppression can be achieved, which is of importance when the coating is used as a protective coating on metal cutting inserts.