Critical conductivity exponent of Si:P in a magnetic field

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Mott-Anderson transition controlled by a magnetic field in pyrochlore molybdate

The pyrochlore molybdate Gd2MO2O7 locates near the phase boundary between the ferromagnetic-metallic and the spin-glass insulating state. This metal-insulator transition is governed on a large energy scale by the electron-correlation effect, while the geometrical frustration causes the random potential. The magnetic field can tune the randomness of the potential and control, under a suitable pressure, the continuous Mott-Anderson transition precisely. The critical exponent (mu = 1.04 +/- 0.1) of the Mott-Anderson transition has been determined for this ferromagnetic orbital-degenerate electron system.

A nearly universal critical conductivity for semiconductor-metal alloys

Classical ionized impurity scattering is employed to calculate the conductivity at and in the vicinity of the critical point. The result sigma(iis)(x = x(c),T) = Asqrt[T], closely given by e(2)/Planck's over 2pilambda(dB) with the de Broglie wavelength lambda(dB) = h/(2m(*)kT)(1/2) in the nondegenerate regime epsilon(F)<<kT, is weakly dependent on the form of the density of states above the mobility edge. This result can explain the sqrt[T] term observed for amorphous semiconductor alloys. sigma(iis)(x>x(c), T) might also explain the linear scaling behavior sigma(x, T)-Asqrt[T] = sigma(0)(x/x(0)-1).