Gated-region transport in the quantum Hall effect

Non-Markovian transients in transport across chiral quantum wires using space-time non-equilibrium Green functions

We study a system of two non-interacting quantum wires with fermions of opposite chirality with a point contact junction at the origin across which tunneling can take place when an arbitrary time-dependent bias between the wires is applied. We obtain the exact dynamical non-equilibrium Green function by solving Dyson's equation analytically. Both the space-time dependent two and four-point functions are written down in a closed form in terms of simple functions of position and time. This allows us to obtain, among other things, theI-Vcharacteristics for an arbitrary time-dependent bias. Our method is a superior alternative to competing approaches to non-equilibrium as we are able to account for transient phenomena as well as the steady state. We study the approach to steady state by computing the time evolution of the equal-time one-particle Green function. Our method can be easily applied to the problem of a double barrier contact whose internal properties can be adjusted to induce resonant tunneling leading to a conductance maximum. We then consider the case of a finite bandwidth in the point contact and calculate the non-equilibrium transport properties which exhibit non-Markovian behaviour. When a subsequently constant bias is suddenly switched on, the current shows a transient build up before approaching its steady state value in contrast to the infinite bandwidth case. This transient property is consistent with numerical simulations of lattice systems using time-dependent density matrix renormalization group suggesting thereby that this transient build up is merely due to the presence of a short distance cutoff in the problem description and not on the other details.

Scanning gate imaging of a disordered quantum point contact

Scanning gate microscopy (SGM) is a novel technique that has been used to image characteristic features related to the coherent electron flow in mesoscopic structures. For instance, SGM has successfully been applied to study peculiar electron transport properties that arise due to small levels of disorder in a system. The particular case of an InGaAs quantum well layer in a heterostructure, which is dominated by a quasi-ballistic regime, was analyzed. A quantum point contact fabricated onto this material exhibits conduction fluctuations that are not expected in typical high-mobility heterostructures such as AlGaAs/GaAs. SGM revealed not only interference patterns corresponding to specific conductance fluctuations but also mode-dependent resistance peaks corresponding to the first and second quantum levels of conductance (2e(2)/h) at zero magnetic field. On the other hand, clear conductance plateaus originating from the integer quantum Hall effect were observed at high magnetic fields. The physical size of incompressible edge channels was estimated from cross-sectional analysis of these images.