Stability of the wurtzite-type structure under high pressure: GaN and InN

Dense Structure of Yttrium Nitride as a Post-Rock-Salt Phase: High-Pressure Experiments and Computations

The post-rock-salt (B1) phase in yttrium nitride was investigated under pressures above 100 GPa. The starting B1 phase was prepared by a direct elemental reaction between yttrium metal and supercritical nitrogen in a laser-heated diamond anvil cell. Compression of the resulting compound under nitrogen pressure revealed that the experimental bulk modulus was significantly lower than that reported for previous compression experiments but consistent with values predicted by theoretical calculations. The post-B1 phase transition started at 116 GPa and was almost completed at 170 GPa, with slow kinetics of conversion. In contrast to the likely transformation to B2 from B1, the phase was determined to be B10, which is identical to a high-pressure BaO structure. Theoretical enthalpy calculation demonstrated that a transition from B1 to B10 takes place at 108 GPa prior to the B2 transition. The present YN is the first non-4f-nitride compound reported to crystallize with a B10 structure.

First-Principles Study on III-Nitride Polymorphs: AlN/GaN/InN in the Pmn21 Phase

The structural, mechanical, and electronic properties, as well as stability, elastic anisotropy and effective mass of AlN/GaN/InN in the Pmn2₁ phase were determined using density functional theory (DFT). The phonon dispersion spectra and elastic constants certify the dynamic and mechanical stability at ambient pressure, and the relative enthalpies were lower than those of most proposed III-nitride polymorphs. The mechanical properties reveal that Pmn2₁-AlN and Pmn2₁-GaN possess a high Vickers hardness of 16.3 GPa and 12.8 GPa. Pmn2₁-AlN, Pmn2₁-GaN and Pmn2₁-InN are all direct semiconductor materials within the HSE06 hybrid functional, and their calculated energy band gaps are 5.17 eV, 2.77 eV and 0.47 eV, respectively. The calculated direct energy band gaps and mechanical properties of AlN/GaN/InN in the Pmn2₁ phase reveal that these three polymorphs may possess great potential for industrial applications in the future.

Interaction potentials for modelling GaN precipitation and solid state polymorphism

We outline a molecular mechanics model for the interaction of gallium and nitride ions ranging from small complexes to nanoparticles and bulk crystals. While the current GaN force fields allow the modelling of either bulk crystals or single ions dispersed in solution, our model covers both and hence paves the way to describing aggregate formation and crystal growth processes from molecular simulations. The key to this is the use of formal  +3 and  -3 charges on the gallium and nitride ions, whilst accounting for the charge transfer in GaN crystals by means of additional potential energy terms. The latter are fitted against experimental data of GaN in the wurtzite structure and benchmarked for the zinc-blende and rock-salt polymorphs. Comparison to quantum chemical references and experiment shows reasonable agreement of structures and formation energy of [GaN] _n aggregates, elastic properties of the bulk crystal, the transition pressure of the wurtzite to rock-salt transformation and intrinsic point defects. Furthermore, we demonstrate force field transferability towards the modelling of GaN nanoparticles from simulated annealing runs.

Self-structuring in Zr1-xAlxN films as a function of composition and growth temperature

Nanostructure formation via surface-diffusion-mediated segregation of ZrN and AlN in Zr_1−xAl_xN films during high mobility growth conditions is investigated for 0 ≤ × ≤ 1. The large immiscibility combined with interfacial surface and strain energy balance resulted in a hard nanolabyrinthine lamellar structure with well-defined (semi) coherent c-ZrN and w-AlN domains of sub-nm to ~4 nm in 0.2 ≤ × ≤ 0.4 films, as controlled by atom mobility. For high AlN contents (x > 0.49) Al-rich ZrN domains attain wurtzite structure within fine equiaxed nanocomposite wurtzite lattice. Slow diffusion in wurtzite films points towards crystal structure dependent driving force for decomposition. The findings of unlikelihood of iso-structural decomposition in c-Zr_1−xAl_xN, and stability of w-Zr_1−xAl_xN (in large × films) is complemented with first principles calculations.

Interface control for pure ultraviolet electroluminescence from nano-ZnO-based heterojunction devices

Realization of pure and stable ultraviolet electroluminescence (UV EL) of ZnO light-emitting diode (LED) is still a challenging issue, due to complicated defects of intrinsic ZnO and the corresponding device interfaces. In this paper, we demonstrated a simple & feasible method to fabricate n-ZnO/AlN/p-GaN heterojunctions light-emitting devices. First, the vertically aligned ZnO nanorods (NRs) have been prepared as high quality active layer, and the nanostructured heterojunction LED arrays were constructed by directly bonding ZnO NRs onto AlN-coated p-GaN wafer. By optimizing the AlN layer thickness to be 20 nm, a strong and pure ultraviolet emission located at 387 nm can be observed. The energy band alignment of n-ZnO/AlN (20 nm)/p-GaN heterojunction LED has been studied by using X-ray photoelectron spectroscopy (XPS), the valence band offset between AlN and GaN was calculated to be 0.34 eV. On the other side, the conduction band offset (as large as 3.28 eV) between AlN and ZnO can block the flow of electrons from ZnO to p-GaN. Thus, electron-hole recombination takes place in the ZnO layer, and a pure UV EL could be observed. Our results provide a significant approach toward future of pure ultraviolet optoelectronic LEDs.

Correlation between the structural change and the electrical transport properties of indium nitride under high pressure

We report on the intriguing structural and electrical transport properties of compressed InN. Pronounced anomalies of the resistivity, Hall coefficient, electron concentration, and mobility are observed at ∼11.5 GPa, accompanied by a wurtzite-rocksalt structural transition confirmed using high-pressure XRD measurements and first-principles calculations. The pressure-tuned electrical properties of wurtzite and rocksalt InN are also studied, respectively. Particularly, compression pressure significantly decreases the electron concentration of rocksalt InN by two orders of magnitude and increases the mobility by ten fold. The obvious variations in electrical parameters can be rationalized by our band structure simulations, which reveal a direct-indirect energy crossover at 10 GPa, followed by the rapidly increasing patterns of the energy gap with a pressure coefficient of 33 meV GPa^-1. Moreover the electron effective mass and energy gap are found to well satisfy with the k·p model. Definite correlation between the structural change and the electrical transport properties should shed a new light on building InN-based applications in the future.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

We report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ∼7 GPa. The GaN NW lasers, with heights of 4-5 μm and diameters ∼140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ∼40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values, revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. This approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.

Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

We present first-principles studies of the effect of biaxial (0001)-strain on the electronic structure of wurtzite GaN, AlN, and InN. We provide accurate predictions for the valence band splittings as a function of strain which greatly facilitates the interpretation of data from samples with unintentional growth-induced strain. The present calculations are based on the total-energy pseudopotential method within the local-density formalism and include the spin-orbit interaction nonperturbatively. For a given biaxial strain, all structural parameters are determined by minimization of the total energy with respect to the electronic and ionic degrees of freedom. Our calculations predict that the valence band state Γ9(Γ6) lies energetically above the Γ7(Γ1) states in GaN and InN, in contrast to the situation in AlN. In all three nitrides, we find that the ordering of these two levels becomes reversed for some value of biaxial strain. In GaN, this crossing takes place already at 0.32% tensile strain. For larger tensile strains, the top of the valence band becomes well separated from the lower states. The computed crystal-field and spin-orbit splittings in unstrained materials as well as the computed deformation potentials agree well with the available experimental data.

Structure, energetics, and electronic states of III-V compound polytypes

Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for conventional III-V semiconductor compounds in addition to the cubic 3C zinc-blende polytype by investigating nanorods grown in the [111] direction in different temperature regimes. Also III-mononitrides crystallizing in the hexagonal 2H wurtzite structure under ambient conditions can be deposited in zinc-blende geometry using various growth techniques. The polytypic crystal structures influence the local electronic properties and the internal electric fields due to the spontaneous polarization in non-cubic crystals.In this paper we give a comprehensive review on the thermodynamic, structural, and electronic properties of twelve Al, Ga, and In antimonides, arsenides, phosphides, and nitrides as derived from ab initio calculations. Their lattice parameters, energetic stability, and characteristic band structure energies are carefully discussed and related to the atomic geometries of the polytypes. Chemical trends are investigated. Band offsets between polytypes and their consequences for heterocrystalline structures are derived. The described properties are discussed in the light of available experimental data and previous computations. Despite several contradictory results in the literature, a unified picture of the III-V polytypes and their heterocrystalline structures is developed.

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The structural, electronic and vibrational properties of InN under pressures up to 20 GPa have been investigated using the pseudo-potential plane wave method (PP-PW). The generalized-gradient approximation (GGA) in the frame of density functional theory (DFT) approach has been adopted. It is found that the transition from wurtzite (B4) to rocksalt (B1) phase occurs at a pressure of approximately 12.7 GPa. In addition, a change from a direct to an indirect band gap is observed. The mechanism of these changes is discussed. The phonon frequencies and densities of states (DOS) are derived using the linear response approach and density functional perturbation theory (DFPT). The properties of phonons are described by the harmonic approximation method. Our results show that phonons play an important role in the mechanism of phase transition and in the instability of B4 (wurtzite) just before the pressure of transition. At zero pressure our data agree well with recently reported experimental results.

Structural, elastic constant, and vibrational properties of wurtzite gallium nitride: a first-principles approach

Perdew-Wang proposed generalized gradient approximation (GGA) is used in conjunction with ultrasoft pseudopotential to investigate the structural, elastic constant, and vibrational properties of wurtzite GaN. The equilibrium lattice parameters, axial ratio, internal parameter, bulk modulus, and its pressure derivative are calculated. The effect of pressure on equilibrium lattice parameters, axial ratio, internal parameter (u), relative volume, and bond lengths parallel and perpendicular to the c-axis are discussed. At 52 GPa, the relative volume change is observed to be 17.8%, with an abrupt change in bond length. The calculated elastic constants are used to calculate the shear wave speeds in the [100] and [001] planes. The finite displacement method is employed to calculate phonon frequencies and the phonon density of states. The first- and second-order pressure derivative and volume dependent Gruneisen parameter (γ(j)) of zone-center phonon frequencies are discussed. These phonon calculations calculated at theoretical lattice constants agree well with existing literature.

Surface Energy Constraints for Heteroepitaxial Growth on Compliant Substrates: Morphology of GaN Grown on Sc Layers

An empirical relationship linking surface energy to bulk modulus is presented which suggests that the thermodynamic growth mode for heteroepitaxy on compliant substrates should be 3-D. As an example of this behavior, GaN growth on Sc is shown for various growth conditions. 2-D growth is obtained when the GaN is grown on top of a low temperature GaN nucleation layer. Our results indicate that surface and interface energies, in addition to, lattice matching and thermal matching play an important role in determining the heteroexpitaxial growth morphology of GaN. There appears to be no net reduction in the dislocation density for GaN films grown on the Sc layers, because the GaN film has to be grown on a low temperature nucleation layer.

Thermal Expansion Of GaN And Ain

The temperature dependence of the thermal expansion and the bulk modulus are critical for predicting the residual stress distribution in epitaxial films and provides information relevant for interatomic potentials and equations of state. The thermal expansions of aluminum nitride (AIN) and gallium nitride (GaN) are calculated with two models that employ the limited elastic and lattice parameter data. These semiempirical models allow prediction of the thermal expansions to higher temperatures. Calculated results are compared with experimental data.

Atomistic modeling of III-V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and Ga(1-x)In(x)N

Modified embedded-atom method (MEAM) interatomic potentials for the Ga-N and In-N binary and Ga-In-N ternary systems have been developed based on the previously developed potentials for Ga, In and N. The potentials can describe various physical properties (structural, elastic and defect properties) of both zinc-blende and wurtzite-type GaN and InN as well as those of constituent elements, in good agreement with experimental data or high-level calculations. The potential can also describe the structural behavior of Ga(1-x)In(x)N ternary nitrides reasonably well. The applicability of the potentials to atomistic investigations of atomic/nanoscale structural evolution in Ga(1-x)In(x)N multi-component nitrides during the deposition of constituent element atoms is discussed.

A density functional study of the high-pressure chemistry of MSiN(2)(M = Be, Mg, Ca): prediction of high-pressure phases and examination of pressure-induced decomposition

Normal pressure modifications and tentative high-pressure phases of the nitridosilicates MSiN(2) with M =  Be, Mg, or Ca have been thoroughly studied by density functional methods. At ambient pressure, BeSiN(2) and MgSiN(2) exhibit an ordered wurtzite variant derived from idealized filled β-cristobalite by a C1-type distortion. At ambient pressure, the structure of CaSiN(2) can also be derived from idealized filled β-cristobalite by a different type of distortion (D1-type). Energy-volume calculations for all three compounds reveal transition into an NaCl superstructure under pressure, affording sixfold coordination for Si. At 76 GPa BeSiN(2) forms an LiFeO(2)-type structure, corresponding to the stable ambient-pressure modification of LiFeO(2), while MgSiN(2) and CaSiN(2) adopt an LiFeO(2)-type structure, corresponding to a metastable modification (24 and 60 GPa, respectively). For both BeSiN(2) and CaSiN(2) intermediate phases appear (for BeSiN(2) a chalcopyrite-type structure and for CaSiN(2) a CaGeN(2)-type structure). These two tetragonal intermediate structures are closely related, differing mainly in their c/a ratio. As a consequence, chalcopyrite-type structures exhibit tetrahedral coordination for both cations (M and Si), whereas in CaGeN(2)-type structures one cation is tetrahedrally (Si) and one bisdisphenoidally (M) coordinated. Both structure types, chalcopyrite and CaGeN(2), can also be derived from idealized filled β-cristobalite through a B1-type distortion. The group-subgroup relation of the BeSiN(2)/MgSiN(2), the CaSiN(2), the chalcopyrite, the CaGeN(2) and the idealized filled β-cristobalite structure is discussed and the displacive phase transformation pathways are illustrated. The zero-pressure bulk moduli were calculated for all phases and have been found to be comparable to compounds such as α- Si(3)N(4), CaIrO(3) and Al(4)C(3). Furthermore, the thermodynamic stability of BeSiN(2), MgSiN(2) and CaSiN(2) against phase agglomerates of the binary nitrides M(3)N(2) and Si(3)N(4) under pressure are examined.

Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields

Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.

Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation

Details of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-crystal Si(100) and the metal-organic chemical-vapor deposition (MOCVD) derived GaN thin films have been systematic investigated by means of micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM) techniques. The XTEM samples were prepared by using focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The behaviors of the discontinuities displayed in the loading and unloading segments of the load-displacement curves of Si and GaN thin films performed with a Berkovich diamond indenter tip were explained by the observed microstructure features obtained from XTEM analyses. According to the observations of micro-Raman and XTEM, the nanoindentation-induced mechanical deformation is due primarily to the generation and propagation of dislocations gliding along the pyramidal and basal planes specific to the hexagonal structure of GaN thin films rather than by indentation-induced phase transformations displayed in Si.

Structure and mobility of defects formed from collision cascades in MgO

We study radiation-damage events in MgO on experimental time scales by augmenting molecular dynamics cascade simulations with temperature accelerated dynamics, molecular statics, and density functional theory. At 400 eV, vacancies and mono- and di-interstitials form, but often annihilate within milliseconds. At 2 and 5 keV, larger clusters can form and persist. While vacancies are immobile, interstitials aggregate into clusters (In) with surprising properties; e.g., an I4 is immobile, but an impinging I2 can create a metastable I6 that diffuses on the nanosecond time scale but is stable for years.

An ab initio study of structural properties and single vacancy defects in Wurtzite AlN

The cell parameters, bulk moduli and electronic densities-of-states (DOS) of pure and vacancy defect AlN were computed using generalized-gradient approximation (GGA) and hybrid functional (B3LYP) computational methods within both plane wave-pseudopotential and localized Gaussian basis set approaches. All of the methods studied yielded cell parameters and bulk moduli in reasonable agreement with experiment. The B3LYP functional was also found to predict an optical band gap in excellent agreement with experiment. These methods were subsequently applied to the calculation of the geometry, defect state positions and formation energies of the cation (V(Al)) and anion (V(N)) single vacancy defects. For the V(Al) defect, the plane wave-pseudopotential predicted a significant retraction of the neighboring N away from the vacancy, while for the V(N) defect, only slight relaxations of the surrounding Al atoms towards the vacancy were predicted. For the computed DOS of both vacancy defects, the GGA methods yielded similar features and defect level positions relative to the valence band maximum, while the B3LYP method predicted higher separations between the defect levels and the valence and conduction bands, leading to higher energy occupied defect levels.

Efficient Eley-Rideal reactions of H atoms with single Cl adsorbates on Au(111)

Density functional theory is used to construct an interaction model for H atoms with Cl over Au(111). Single-adsorbate Eley-Rideal reactions are investigated with quantum and quasiclassical methods. The reaction cross sections, amounting to 2-3 A(2), are much larger than for HD recombinations on metals. This can be traced to the adsorbed Cl being relatively far above the surface, the H-Cl interaction prevailing over the H-substrate attraction for a sizable range of impact parameters.

Vibrational recognition of hydrogen-bonded water networks on a metal surface

The adsorption of water on Pt(111) surface has been studied with ab initio molecular dynamics simulation. Both the energetics and vibrational dynamics indicate the existence of a well-ordered molecular bilayer on this surface. This conclusion is in contrast to the recent result of water on Ru(0001) surface, but agrees with available experiments. In addition, our calculation identifies two different hydrogen bonds in the bilayer. Both can be directly recognized from the vibrational spectra of the OH stretch modes.

New spin-orbit-induced universality class in the integer quantum Hall regime

Using heuristic arguments and numerical simulations it is argued that the critical exponent nu describing the localization length divergence at the integer quantum-Hall transition is modified in the presence of spin-orbit scattering with short-range correlations. The exponent is very close to nu=4/3, the percolation correlation length exponent, consistent with the prediction of a semiclassical argument. In addition, a band of weakly localized states is conjectured.

Adsorbate-induced pinning of a charge-density wave in a quasi-1D metallic chains: Na on the In/Si(111)-(4x1) surface

We find that foreign adsorbates acting as local impurities can induce a metal-insulator transition by pinning a charge-density wave (CDW) on the quasi-1D metallic In/Si(111)-(4x1) chain system. Our scanning tunneling microscopy image clearly reveals the presence of a new local 4x2 structure nucleated by Na adatoms at room temperature, which turns out to be insulating with a doubled periodicity along the chains. We directly determine a CDW gap energy Delta = 105+/-8 meV by identifying a characteristic loss peak in our high-resolution electron-energy-loss spectra. We thus report the first observation of a local impurity-derived Peierls-like reconstruction of a quasi-1D system.

Metal-insulator transition in a 2D electron gas: equivalence of two approaches for determining the critical point

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that, in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition.

Indication of the ferromagnetic instability in a dilute two-dimensional electron system

The magnetic field B(c), in which the electrons become fully spin polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon. The tendency of B(c) to vanish at a finite electron density suggests a ferromagnetic instability in this strongly correlated electron system.

Role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study

Recent low-temperature scanning tunneling experiments have questioned the generally accepted picture of buckled silicon dimers as the ground state reconstruction of the Si(100) surface, undermining the ability of density functional theory to accurately describe electronic correlations at surfaces. We present quantum Monte Carlo calculations on large cluster models of the surface, and conclude that buckling remains energetically favorable even when the present-day best treatment of electronic correlation is employed. The implications for experimental interpretation are discussed.

Structure determination of the Si3N4/Si(111)- (8 x 8) surface: a combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations

A comprehensive atomic model for the reconstructed surface of Si3N4 thin layer grown on Si(111) is presented. Kikuchi electron holography images clearly show the existence of adatoms on the Si3N4(0001)/Si(111)-(8x8) surface. Compared with the ab initio calculations, more than 30 symmetry-inequivalent atomic pairs in the outmost layers are successfully identified. Scanning tunneling microscopy (STM) images show diamond-shaped unit cells and nine adatoms in each cell. High-resolution STM images reveal extra features and are in good agreement with the partial charge density distribution obtained from total-energy calculations.

Homogeneous Strain Deformation Path for the Wurtzite to Rocksalt High-Pressure Phase Transition in GaN

A homogeneous orthorhombic shear strain deformation path is proposed for the wurtzite to rocksalt high-pressure transformation. Its energetics are calculated from first-principles for GaN. Previous experimental and theoretical studies of the transition pressure are discussed.

Self-diffusion of small clusters on fcc metal (111) surfaces

We use ab initio density-functional theory supplemented with the embedded-atom method to study the self-diffusion of small clusters on the (111) surface of eight fcc metals. A zigzag motion is found to be important in the dimer and tetramer diffusions. The dimer diffuses by a zigzag and concerted motion. The trimer diffuses by a concerted three-atom motion. The tetramer diffuses through a zigzag motion where only two atoms move simultaneously in each step. Thus, instead of increasing, the migration energy is lowered (or stays constant) for the tetramer as compared to that for the trimer. This novel break of the upwards trend in migration energy is predicted to be a general phenomenon.

Polarization instability in polydomain ferroelectric epitaxial thin films and the formation of heterophase structures

A thermodynamic theory is developed for dense laminar domain structures in epitaxial ferroelectric films. It is found that, at some critical misfit strain between the film and substrate, the 90 degrees c/a/c/a domain structure becomes unstable with respect to the appearance of the polarization component parallel to domain walls, which results in the formation of a heterophase structure. For PbTiO3 and BaTiO3 films, the stability ranges of polydomain and heterophase states are determined. Dielectric anomalies accompanying misfit-strain-driven structural transformations are described.

Andreev reflection in strong magnetic fields

We have studied the interplay of Andreev reflection and cyclotron motion of quasiparticles at a superconductor-normal-metal interface with a strong magnetic field applied parallel to the interface. Bound states are formed due to the confinement introduced by both the external magnetic field and the superconducting gap. These bound states are a coherent superposition of electron and hole edge excitations similar to those realized in finite quantum-Hall samples. We find the energy spectrum for these Andreev edge states and calculate transport properties.

Nonradiative electron-hole recombination by a low-barrier pathway in hydrogenated silicon semiconductors

A microscopic pathway for nonradiative electron-hole recombination by large structural reconfiguration in hydrogenated Si is found with first-principles calculations. Trapped-biexciton formation leads to a low-barrier reconfiguration of the H atom, accompanied by crossing of doubly occupied electron and hole levels in the band gap. This crossing represents the nonradiative recombination of the carriers, without multiphonon emission. The proposal provides a mechanism for carrier-induced H emission during metastable degradation of hydrogenated amorphous silicon.