1
|
Jardine MA, Dardzinski D, Cai Z, Strocov VN, Hocevar M, Palmstrøm CJ, Frolov SM, Marom N. First-Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface. ACS APPLIED MATERIALS & INTERFACES 2025; 17:5462-5474. [PMID: 39800944 PMCID: PMC11758987 DOI: 10.1021/acsami.4c17957] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2024] [Revised: 12/30/2024] [Accepted: 01/06/2025] [Indexed: 01/24/2025]
Abstract
Majorana zero modes are predicted to emerge in semiconductor/superconductor interfaces, such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits. However, their realization is hindered by materials challenges. The coupling between the superconductor and the semiconductor may be too strong for Majorana modes to emerge, due to effective doping of the semiconductor by the metallic contact. This could be mediated by adding a tunnel barrier of controlled thickness. We use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO), to assess ZnTe and CdSe as prospective tunnel barriers for the InAs/Al interface. The results of DFT+U(BO) for ZnTe are validated by comparison to angle resolved photoemission spectroscopy (ARPES). We then study bilayer interfaces of the three semiconductors with each other and with Al, as well as trilayer interfaces with a varying number of ZnTe or CdSe layers inserted between InAs and Al. We find that 16 atomic layers of either material completely insulate the InAs from metal induced gap states (MIGS). However, ZnTe and CdSe differ significantly in their band alignment, such that ZnTe forms an effective barrier for electrons, whereas CdSe forms a barrier for holes. Because of Fermi level pinning in the conduction band at the interface, only electron transport is relevant for InAs-based Majorana devices. Therefore, ZnTe is the better choice. Based on the results of our simulations, we suggest conducting experiments with ZnTe barriers in the thickness range of 6-18 atomic layers.
Collapse
Affiliation(s)
- Malcolm
J. A. Jardine
- Department
of Materials Science and Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Derek Dardzinski
- Department
of Materials Science and Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Zefeng Cai
- Department
of Materials Science and Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Vladimir N. Strocov
- Swiss
Light Source, Paul Scherrer Institut, CH-5232 Villigen
PSI, Switzerland
| | - Moïra Hocevar
- Univ.
Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - Christopher J. Palmstrøm
- Materials
Department, University of California-Santa
Barbara, Santa Barbara, California 93106, United States
- Department of Electrical
and Computer Engineering, University of
California-Santa Barbara, Santa
Barbara, California 93106, United States
| | - Sergey M. Frolov
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Noa Marom
- Department
of Materials Science and Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213, United States
- Department
of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
- Department
of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| |
Collapse
|
2
|
Fenoll D, Sodupe M, Solans-Monfort X. Influence of Capping Ligands, Solvent, and Thermal Effects on CdSe Quantum Dot Optical Properties by DFT Calculations. ACS OMEGA 2023; 8:11467-11478. [PMID: 37008094 PMCID: PMC10061629 DOI: 10.1021/acsomega.3c00324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 03/07/2023] [Indexed: 06/19/2023]
Abstract
Cadmium selenide nanomaterials are very important materials in photonics, catalysis, and biomedical applications due to their optical properties that can be tuned through size, shape, and surface passivation. In this report, static and ab initio molecular dynamics density functional theory (DFT) simulations are used to characterize the effect of ligand adsorption on the electronic properties of the (110) surface of zinc blende and wurtzite CdSe and a (CdSe)33 nanoparticle. Adsorption energies depend on ligand surface coverage and result from a balance between chemical affinity and ligand-surface and ligand-ligand dispersive interactions. In addition, while little structural reorganization occurs upon slab formation, Cd···Cd distances become shorter and the Se-Cd-Se angles become smaller in the bare nanoparticle model. This originates mid-gap states that strongly influence the absorption optical spectra of nonpassivated (CdSe)33. Ligand passivation on both zinc blende and wurtzite surfaces does not induce a surface reorganization, and thus, the band gap remains nonaffected with respect to bare surfaces. In contrast, structural reconstruction is more apparent for the nanoparticle, which significantly increases its highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap upon passivation. Solvent effects decrease the band gap difference between the passivated and nonpassivated nanoparticles, the maximum of the absorption spectra being blue-shifted around 20 nm by the effect of the ligands. Overall, calculations show that flexible surface cadmium sites are responsible for the appearance of mid-gap states that are partially localized on the most reconstructed regions of the nanoparticle that can be controlled through appropriate ligand adsorption.
Collapse
|
4
|
The higher excited electronic states and spin–orbit splitting of the valence band in three-dimensional assemblies of close-packed ZnSe and CdSe quantum dots in thin film form. J SOLID STATE CHEM 2008. [DOI: 10.1016/j.jssc.2008.03.038] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
|
5
|
Erni R, Browning ND. Quantification of the size-dependent energy gap of individual CdSe quantum dots by valence electron energy-loss spectroscopy. Ultramicroscopy 2007; 107:267-73. [PMID: 16996213 DOI: 10.1016/j.ultramic.2006.08.002] [Citation(s) in RCA: 52] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2006] [Revised: 07/27/2006] [Accepted: 08/09/2006] [Indexed: 11/28/2022]
Abstract
Valence electron energy-loss spectroscopy (VEELS) performed in a monochromated scanning transmission electron microscope was used to measure the energy gaps of individual quantum dots (QDs). The gap energies of a series of CdSe QDs measured by VEELS reveal the expected quantum confinement effect; the gap energy increases with decreasing particle size. However, the values derived from these first VEELS measurements of single QDs are larger than the values commonly measured by optical spectroscopy. As standard optical methods lack the spatial resolution to probe individual nanoparticles, the particle-size distribution influences the optical response. It is suggested that the impact of the particle-size distribution accounts for the discrepancy between the energy-gap values derived from VEELS of single QDs and from optical methods of ensembles of QDs.
Collapse
Affiliation(s)
- Rolf Erni
- Department of Chemical Engineering and Materials Science, University of California Davis, One Shields Ave., Davis, CA 95616, USA.
| | | |
Collapse
|
6
|
Zhu S, Zhao B, Jin Y, Shao S, Gao D, Li Q, Li Z, Zhu X. Modified Growth of Cadmium Selenide Single Crystals from the Vapor Phase and Quality Characterization. CRYSTAL RESEARCH AND TECHNOLOGY 2000. [DOI: 10.1002/1521-4079(200011)35:11/12<1239::aid-crat1239>3.0.co;2-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
|
7
|
Park HS, Mokhtari M, Roesky HW. Cd(SeRf)2 (Rf = 2,4,6-(CF3)3C6H2)—An improved CVD single source precursor for II-VI Semiconductors: Synthesis, growth and characterization. ACTA ACUST UNITED AC 1996. [DOI: 10.1002/cvde.19960020403] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
|
8
|
Günther O, Janowitz C, Jungk G, Jenichen B, Hey R, Däweritz L, Ploog K. Comparison between the electronic dielectric functions of a GaAs/AlAs superlattice and its bulk components by spectroscopic ellipsometry using core levels. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:2599-2609. [PMID: 9981327 DOI: 10.1103/physrevb.52.2599] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|