Anomalous variation of phonon Raman intensities near the metal-to-Mott-insulator transition in titanium oxide systems

Spin-Orbital Excitation Continuum and Anomalous Electron-Phonon Interaction in the Mott Insulator LaTiO_{3}

Raman scattering experiments on stoichiometric, Mott-insulating LaTiO_{3} over a wide range of excitation energies reveal a broad electronic continuum which is featureless in the paramagnetic state, but develops a gap of ~800 cm^{-1} upon cooling below the Néel temperature T_{N}=146 K. In the antiferromagnetic state, the spectral weight below the gap is transferred to well-defined spectral features due to spin and orbital excitations. Low-energy phonons exhibit pronounced Fano anomalies indicative of strong interaction with the electron system for T>T_{N}, but become sharp and symmetric for T<T_{N}. The electronic continuum and the marked renormalization of the phonon lifetime by the onset of magnetic order are highly unusual for Mott insulators and indicate liquidlike correlations between spins and orbitals.

Large modulations in the intensity of Raman-scattered light from pristine carbon nanotubes

Large modulations of up to 2 orders of magnitude are observed in the Raman intensity of pristine, suspended, quasimetallic, single-walled carbon nanotubes in response to applied gate potentials. No change in the resonance condition is observed, and all Raman bands exhibit the same changes in intensity, regardless of phonon energy or laser excitation energy. The effect is not observed in semiconducting nanotubes. The electronic energy gaps correlate with the drop in the Raman intensity, and the recently observed Mott insulating behavior is suggested as a possible explanation for this effect.

Effect of oxygen content on the transport properties of LaTiO(3+β/2) thin films

The structural and transport properties of LaTiO(3+β/2) epitaxial thin films, grown at different oxygen pressures ranging from 6.6 × 10(-4) to 5 Pa, have been investigated. X-ray diffraction peaks of the films shift to lower angles with increasing oxygen pressure, indicative of a variation of the corresponding lattice spacing. All the films show T(2) dependence of resistivity over a large temperature range of ∼200 K, suggesting a band-filling-induced metallic Fermi-liquid behaviour. Upturns in resistivity have been revealed at low temperatures, which could be ascribed to the Anderson-localization effect caused by the cation vacancies. Furthermore, for the thin films grown at high oxygen pressures of 0.5 and 5 Pa, the dependence of resistivity on temperature shows a maximum at high temperatures. The maximum seems to support the argument that transition between t-orbital ordering and disordering plays an important role in dominating transport properties at high temperatures. Carrier density deduced from Hall coefficient increases with the decrease of oxygen content, and shows strong temperature dependence. From the experimental data, it can be asserted that in the LaTiO(3+β/2) thin films, besides the band filling effect, localization or disorder caused by La and Ti vacancy effects controls the unique transport properties.

Bulk- and surface-sensitive high-resolution photoemission study of two mott-hubbard systems: SrVO3 and CaVO3

We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface-sensitive high-resolution photoemission spectroscopy, using a vacuum ultraviolet laser, synchrotron radiation, and a discharge lamp (hv = 7-21 eV). A systematic suppression of the density of states (DOS) within approximately 0.2 eV of the Fermi level (EF) is found on decreasing photon energy, i.e., on increasing bulk sensitivity. The coherent band in SrVO3 and CaVO3 is shown to consist of surface and bulk-derived features, separated in energy. The stronger distortion on surface of CaVO3 compared to SrVO3 leads to a higher surface metallicity in the coherent DOS at EF, consistent with recent theory.