Relationships between the band gaps of the zinc-blende and wurtzite modifications of semiconductors

Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well

Zincblende GaN has the potential to improve the efficiency of green- and amber-emitting nitride light emitting diodes due to the absence of internal polarisation fields. However, high densities of stacking faults are found in current zincblende GaN structures. This study presents a cathodoluminescence spectroscopy investigation into the low-temperature optical behaviour of a zincblende GaN/InGaN single quantum well structure. In panchromatic cathodoluminescence maps, stacking faults are observed as dark stripes, and are associated with non-radiative recombination centres. Furthermore, power dependent studies were performed to address whether the zincblende single quantum well exhibited a reduction in emission efficiency at higher carrier densities-the phenomenon known as efficiency droop. The single quantum well structure was observed to exhibit droop, and regions with high densities of stacking faults were seen to exacerbate this phenomenon. Overall, this study suggests that achieving efficient emission from zinc-blende GaN/InGaN quantum wells will require reduction in the stacking fault density.

Efficient Band-Edge Emission from Indirect Bandgap Semiconductor Quantum Dots upon Shell Engineering

Environmentally friendly colloidal quantum dots (QDs) of groups III-V are in high demand for next-generation high-performance light-emitting devices for display and lighting, yet many of them (e.g., GaP) suffer from inefficient band-edge emission due to the indirect bandgap nature of their parent materials. Herein, we theoretically demonstrate that efficient band-edge emission can be activated at a critical tensile strain γ_c enabled by the capping shell when forming a core/shell architecture. Before γ_c is reached, the emission edge is dominated by dense low-intensity exciton states with a vanishing oscillator strength and a long radiative lifetime. After γ_c is crossed, the emission edge is dominated by high-intensity bright exciton states with a large oscillator strength and a radiative lifetime that is shorter by a few orders of magnitude. This work provides a novel strategy for realizing efficient band-edge emission of indirect semiconductor QDs via shell engineering, which is potentially implemented employing the well-established colloidal QD synthesis technique.

Research progress in metal sulfides for photocatalysis: From activity to stability

Metal sulfides are a type of reduction semiconductor photocatalysts with narrow bandgap and negative conduction band potential, which make them have unique photocatalytic performance in solar-to-fuel conversion and environmental purification. However, metal sulfides also suffer from low quantum efficiency and photocorrosion. In this review, the strategies to improve the photocatalytic activity of metal sulfide photocatalysts by stimulating the charge separation and improving light-harvesting ability are introduced, including morphology control, semiconductor coupling and surface modification. In addition, the recent research progress aiming at improving their photostability is also illustrated, such as, construction of hole transfer heterojunctions and deposition of hole transfer cocatalysts. Based on the electronic band structures, the applications of metal sulfides in photocatalysis, namely, hydrogen production, degradation of organic pollutants and reduction of CO₂, are summarized. Finally, the perspectives of the promising future of metal-sulfide based photocatalysts and the challenges remaining to overcome are also presented.

Indirect to Direct Band Gap Transformation by Surface Engineering in Semiconductor Nanostructures

Indirect band gap semiconductor materials are routinely exploited in photonics, optoelectronics, and energy harvesting. However, their optical conversion efficiency is low, due to their poor optical properties, and a wide range of strategies, generally involving doping or alloying, has been explored to increase it, often, however, at the cost of changing their material properties and their band gap energy, which, in essence, amounts to changing them into different materials altogether. A key challenge is therefore to identify effective strategies to substantially enhance optical transitions at the band gap in these materials without sacrificing their intrinsic nature. Here, we show that this is indeed possible and that GaP can be transformed into a direct gap material by simple nanostructuring and surface engineering, while fully preserving its "identity". We then distill the main ingredients of this procedure into a general recipe applicable to any indirect material and test it on AlAs, obtaining an increase of over 4 orders of magnitude in both emission intensity and radiative rates.

Composition modulation by twinning in InAsSb nanowires

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs_0.90Sb_0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.

Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology

Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.

Effects of Ag doping on the electronic and optical properties of CdSe quantum dots

Cadmium selenide (CdSe) nanocrystals are important photoelectric materials. Doping heterovalent impurities such as silver (Ag) in CdSe nanocrystal quantum dots (QDs) can provide additional charge carriers, which can significantly enhance the performance of CdSe QDs for their potential applications in high-efficiency photovoltaic devices. Using density functional theory (DFT) based calculations with the Heyd-Scuseria-Ernzerhof (HSE06) screened hybrid functional, we demonstrate that Ag doping can affect the structural, electronic and optical properties of CdSe QDs significantly. The location and number of Ag dopant atoms are critical factors for modifying the electronic structure, in particular the change of energy position and shape of the valence and conduction band edges. It is found that doping of Ag atoms into the core region of a CdSe nanoparticle induces metallic-like electronic characteristics with a dense number of electrons emerging at the Fermi level. However, incorporation of Ag dopant into the surface of a CdSe quantum dot introduces some mid-gap states that mainly consist of Se 4p states, and results in a new sub-bandgap electronic transition from mid-gap states to the conduction band. The calculated absorption spectra indicate that doping of just one or two Ag atoms greatly strengthens the absorption in the ultraviolet-visible regime and extends the absorption edges of CdSe QDs into the infrared regime. In particular, the spectra show a high-intensity absorption band between 424 and 600 nm with just 1 Ag atom incorporated into the CdSe QDs. Based on the improved absorption spectra, the present results provide a science-based strategy for designing Ag-doped CdSe QDs with enhanced visible light absorption for their application in high-efficiency photovoltaic devices.

Growth, structural and optical characterization of wurtzite GaP nanowires

Bulk gallium phosphide (GaP) crystallizes in the zinc-blende (ZB) structure and has an indirect bandgap. However, GaP nanowires (NWs) can be synthesized in the wurtzite (WZ) phase as well. The contradictory theoretical predictions and experimental reports on the band structure of WZ GaP suggest a direct or a pseudo-direct bandgap. There are only a few reports of the growth and luminescence from WZ and ZB GaP NWs. We first present a comprehensive study of the gold-catalyzed growth of GaP NWs via metalorganic vapor phase epitaxy on various crystalline and amorphous substrates. We optimized the growth parameters like temperature, pressure and reactant flow rates to grow WZ GaP NWs with minimal taper. These wires were characterized using electron microscopy, x-ray diffraction, Raman scattering and photoluminescence spectroscopy. The luminescence studies of bare GaP NWs and GaP/AlGaP core-shell heterostructures with WZ- and ZB-phase GaP cores suggest that the WZ-phase GaP has a pseudo-direct bandgap with weak near-band-edge luminescence intensity.

ZnSe Nanorods as Visible-Light Absorbers for Photocatalytic and Photoelectrochemical H2 Evolution in Water

A precious-metal- and Cd-free photocatalyst system for efficient H₂ evolution from aqueous protons with a performance comparable to Cd-based quantum dots is presented. Rod-shaped ZnSe nanocrystals (nanorods, NRs) with a Ni(BF₄ )₂ co-catalyst suspended in aqueous ascorbic acid evolve H₂ with an activity up to 54±2 mmol H 2  g_ZnSe ^-1  h^-1 and a quantum yield of 50±4 % (λ=400 nm) under visible light illumination (AM 1.5G, 100 mW cm^-2 , λ>400 nm). Under simulated full-spectrum solar irradiation (AM 1.5G, 100 mW cm^-2 ), up to 149±22 mmol H 2  g_ZnSe ^-1  h^-1 is generated. Significant photocorrosion was not noticeable within 40 h and activity was even observed without an added co-catalyst. The ZnSe NRs can also be used to construct an inexpensive delafossite CuCrO₂ photocathode, which does not rely on a sacrificial electron donor. Immobilized ZnSe NRs on CuCrO₂ generate photocurrents of around -10 μA cm^-2 in an aqueous electrolyte solution (pH 5.5) with a photocurrent onset potential of approximately +0.75 V vs. RHE. This work establishes ZnSe as a state-of-the-art light absorber for photocatalytic and photoelectrochemical H₂ generation.

Tuning adatom mobility and nanoscale segregation by twin formation and polytypism

Nanoscale variations in the composition of an Al _x Ga_1-x As shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crystal phase and/or nanoscale adatom mobility. By applying electron-microscopy-related techniques we correlate the optical, compositional and structural properties at the nanoscale on the same object. The results indicate a clear correlation between the twin density in the nanowire and the quantum-emitter density as well as a significant redshift in the emission. We propose that twinning increases nanoscale segregation effects in ternary alloys. An additional redshift in the emission can be explained by the staggered band alignment between wurtzite and zinc-blende phases. This work opens new avenues in the achievement of homogeneous ternary and quaternary alloys in nanowires and in the engineering of the segregation effects at the nanoscale.

Distinct Excitonic Circular Dichroism between Wurtzite and Zincblende CdSe Nanoplatelets

Nanocrystals (NCs) with identical components and sizes but different crystal structures could not be distinguished by conventional absorption and emission spectra. Herein, we find that circular dichroism (CD) spectroscopy can easily distinguish the CdSe nanoplatelets (NPLs) with different crystal structures of wurtzite (WZ) and zincblende (ZB) with the help of chiral l- or d-cysteine ligands. In particular, the CD signs of the first excitonic transitions in WZ and ZB NPLs capped by the same chiral cysteine are opposite. Theoretic calculation supports the viewpoint of different crystal structures and surfaces arrangements between WZ and ZB NPLs contributing to this significant phenomenon. The CD peaks appearing at the first excitonic transition band of WZ or ZB CdSe NPLs are clearly assigned to the different transition polarizations along 4p_{( x,y,z),Se} → 5s_Cd or 4p_{( x,y),Se} → 5s_Cd. This work not only provides a deep insight into the origin of the optical activity inside chiral semiconductor nanomaterials but also proposes the design principle of chiral semiconductor nanocrystals with high optic activity.

Structural and electronic properties of CdTe1-xSex films and their application in solar cells

The performance improvement of conventional CdTe solar cells is mainly limited by doping concentration and minority carrier life time. Alloying CdTe with an isovalent element changes its properties, for example its band gap and behaviour of dopants, which has a significant impact on its performance as a solar cell absorber. In this work, the structural, optical, and electronic properties of CdTe_1-xSe_x films are examined for different Se concentrations. The band gap of this compound changes with composition with a minimum of 1.40 eV for x = 0.3. We show that with increasing x, the lattice constant of CdTe_1-xSe_x decreases, which can influence the solubility of dopants. We find that alloying CdTe with Se changes the effect of Cu doping on the p-type conductivity in CdTe_1-xSe_x, reducing the achievable charge carrier concentration with increasing x. Using a front surface CdTe_1-xSe_x layer, compositional, structural and electronic grading is introduced to solar cells. The efficiency is increased, mostly due to an increase in the short-circuit current density caused by a combination of lower band gap and a better interface between the absorber and window layer, despite a loss in the open-circuit voltage caused by the lower band gap and reduced charge carrier concentration.

A study on the synthesis, longitudinal optical phonon–plasmon coupling and electronic structure of Al doped ZnS nanorods

First principles density functional theory (DFT) calculations were employed to study the structural and electronic properties of pure and Al doped ZnS nanorods.

Identifying and mapping the polytypes and orientation relationships in ZnO/CdSe core-shell nanowire arrays

Identifying and mapping the crystalline phases and orientation relationships on the local scale in core-shell ZnO nanowire heterostructures are of primary importance to improve the interface quality, which governs the performances of the nanoscale devices. However, this represents a major difficulty, especially when the expected polytypes exhibit very similar properties as in the case of CdSe. In the present work, we address that issue in ZnO nanowire heterostructures involving a uniform and highly conformal CdSe shell grown by molecular beam epitaxy. It is shown by x-ray diffraction and Raman spectroscopy through the occurrence of the (101̄0) and (101̄1) diffraction peaks and of the [Formula: see text] mode at 34 cm^-1, respectively, that the CdSe shell is mostly crystallized into the wurtzite phase. By using automated crystal phase and orientation mapping with precession (ASTAR) in a transmission electron microscope and thus by benefiting from highly precise electron diffraction patterns, the CdSe shell is found to crystallize also into the minority zinc blende phase. The wurtzite CdSe shell is epitaxially grown on the top of ZnO nanowires, and some specific orientation relationships are mapped and revealed when grown on their vertical sidewalls. Zinc blende CdSe domains are also formed exclusively in the center of wurtzite CdSe grains located on the vertical sidewalls; both wurtzite and zinc blende CdSe crystalline phases have a strong orientation relationship. These findings reveal that ASTAR is a powerful technique to elucidate the structural properties on the local scale and to gain a deeper insight into their crystalline phases and orientation relationships, which is highly promising for many types of semiconducting nanowire heterostructures.

Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires

The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

Effects of Polytypism on Optical Properties and Band Structure of Individual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies

III-V semiconductor nanowires (NWs) have gained significant interest as building blocks in novel nanoscale devices. The one-dimensional (1D) nanostructure architecture allows one to extend band structure engineering beyond quantum confinement effects by utilizing formation of different crystal phases that are thermodynamically unfavorable in bulk materials. It is therefore of crucial importance to understand the influence of variations in the NWs crystal structure on their fundamental physical properties. In this work we investigate effects of structural polytypism on the optical properties of gallium phosphide and GaP/GaNP core/shell NW structures by a correlative investigation on the structural and optical properties of individual NWs. The former is monitored by transmission electron microscopy, whereas the latter is studied via cathodoluminescence (CL) mapping. It is found that structural defects, such as rotational twins in zinc blende (ZB) GaNP, have detrimental effects on light emission intensity at low temperatures by promoting nonradiative recombination processes. On the other hand, formation of the wurtzite (WZ) phase does not notably affect the CL intensity neither in GaP nor in the GaNP alloy. This suggests that zone folding in WZ GaP does not enhance its radiative efficiency, consistent with theoretical predictions. We also show that the change in the lattice structure have negligible effects on the bandgap energies of the GaNP alloys, at least within the range of the investigated nitrogen compositions of <2%. Both WZ and ZB GaNP are found to have a significantly higher efficiency of radiative recombination as compared with that in parental GaP, promising for potential applications of GaNP NWs as efficient nanoscale light emitters within the desirable amber-red spectral range.

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires

Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

GaP-ZnS pseudobinary alloy nanowires

Multicomponent nanowires (NWs) are of great interest for integrated nanoscale optoelectronic devices owing to their widely tunable band gaps. In this study, we synthesize a series of (GaP)(1-x)(ZnS)(x) (0 ≤ x ≤ 1) pseudobinary alloy NWs using the vapor transport method. Compositional tuning results in the phase evolution from the zinc blende (ZB) (x < 0.4) to the wurtzite (WZ) phase (x > 0.7). A coexistence of ZB and WZ phases (x = 0.4-0.7) is also observed. In the intermediate phase coexistence range, a core-shell structure is produced with a composition of x = 0.4 and 0.7 for the core and shell, respectively. The band gap (2.4-3.7 eV) increases nonlinearly with increasing x, showing a significant bowing phenomenon. The phase evolution leads to enhanced photoluminescence emission. Strikingly, the photoluminescence spectrum shows a blue-shift (70 meV for x = 0.9) with increasing excitation power, and a wavelength-dependent decay time. Based on the photoluminescence data, we propose a type-II pseudobinary heterojunction band structure for the single-crystalline WZ phase ZnS-rich NWs. The slight incorporation of GaP into the ZnS induces a higher photocurrent and excellent photocurrent stability, which opens up a new strategy for enhancing the performance of photodetectors.

Magneto-optical properties of wurtzite-phase InP nanowires

The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μ exc) and g-factor (g exc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μ exc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g exc = |ge| = 1.4 for B⊥ĉ (where ge is the electron g-factor) and g exc = |ge - gh,//| = 3.5 for B//ĉ (where gh,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.

Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms

The application of nanofilm networks made of branched ZnS-ZnO nanostructures as a flexible UV photodetector is demonstrated. The fabricated devices show excellent operational characteristics: tunable spectral selectivity, widerange photoresponse, fast response speed, and excellent environmental stability.

Determination of exciton reduced mass and gyromagnetic factor of wurtzite (InGa)As nanowires by photoluminescence spectroscopy under high magnetic fields

Semiconductor nanowires (NWs) have the prospect of being employed as basic units for nanoscale devices and circuits. However, the impact of their one-dimensional geometry and peculiar crystal phase on transport and spin characteristics remains largely unknown. We determine the exciton reduced mass and gyromagnetic factor of (InGa)As NWs in the wurtzite phase by photoluminescence (PL) spectroscopy under very high magnetic fields. For B perpendicular to the NW ĉ axis, the exciton reduced mass is 10% greater than that expected for the zincblende phase and no field-induced circular polarization of PL is observed. For B parallel to ĉ, an exciton reduced mass 35% greater than that of the zincblende phase is derived. Moreover, a circular dichroism of 70% is found at 28 T. Finally, an analysis of the PL line shape points at two Zeeman split levels, whose separation corresponds to an exciton gyromagnetic factor |g(e) - g(h,∥)| = 5.8. These results provide a quantitative estimate of the basic electronic and spin properties of NWs and may guide a theoretical analysis of the band structure of these fascinating nanostructures.

Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces

Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101[overline]0}, and {112[overline]0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.

Structure, energetics, and electronic states of III-V compound polytypes

Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for conventional III-V semiconductor compounds in addition to the cubic 3C zinc-blende polytype by investigating nanorods grown in the [111] direction in different temperature regimes. Also III-mononitrides crystallizing in the hexagonal 2H wurtzite structure under ambient conditions can be deposited in zinc-blende geometry using various growth techniques. The polytypic crystal structures influence the local electronic properties and the internal electric fields due to the spontaneous polarization in non-cubic crystals.In this paper we give a comprehensive review on the thermodynamic, structural, and electronic properties of twelve Al, Ga, and In antimonides, arsenides, phosphides, and nitrides as derived from ab initio calculations. Their lattice parameters, energetic stability, and characteristic band structure energies are carefully discussed and related to the atomic geometries of the polytypes. Chemical trends are investigated. Band offsets between polytypes and their consequences for heterocrystalline structures are derived. The described properties are discussed in the light of available experimental data and previous computations. Despite several contradictory results in the literature, a unified picture of the III-V polytypes and their heterocrystalline structures is developed.

Direct band gap wurtzite gallium phosphide nanowires

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555-690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality.

Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman spectroscopy

We report on a major modification of the fundamental electronic band structure of AlAs when grown as a nanoscaled wurtzite crystal. Resonant Raman spectra of individual AlAs-GaAs core-shell nanowires display a resonance between 1.83 and 2.18 eV for the AlAs E₁(TO) phonon mode. Our findings substantiate the lowest conduction band of wurtzite AlAs to comprise Γ₈ symmetry and a low effective mass in agreement with calculations reported recently. The electronic resonance falls below the X, L, and Γ valleys known for AlAs in the zincblende phase. This result points toward a direct nature of wurtzite AlAs and is expected to apply more generally to semiconductors that in the bulk phase exhibit L valleys at lower energies than the conduction band at the Γ point.

An optimized ultraviolet-A light photodetector with wide-range photoresponse based on ZnS/ZnO biaxial nanobelt

A novel 1D/1D nanocomposite-based photodetector is successfully fabricated from high-crystalline ZnS/ZnO biaxial nanobelts for the first time. Optimized performance of the ZnS/ZnO nanobelt photodetector is much better than that of pure ZnS or ZnO nanostructures, with a wide-range UV-A light photoresponse, high sensitivity, and very fast response speed.

Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate that resonant Raman scattering is a important tool to probe the electronic structure of novel materials. Exemplarily, we use this technique to elucidate the band structure of wurtzite GaAs at the Γ point. Within the experimental uncertainty we find that the free excitons at the edge of the wurtzite and the zinc-blende band gap exhibit equal energies. For the first time we show that the conduction band minimum in wurtzite GaAs is of Γ(7) symmetry, meaning a small effective mass. We further find evidence for a light-hole-heavy-hole splitting of 103 meV at 10 K.

Unpredicted nucleation of extended zinc blende phases in wurtzite ZnO nanotetrapod arms

Tailoring the structural and electronic properties of 3D nanostructures via bottom-up techniques would pave the way for novel low-cost applications. One of such possibilities is offered by ZnO branched nanostructures like tetrapods, that have recently attracted attention for nanodevice applications from nanoelectronics to drug delivery. The conventional picture is that ZnO arms are thermodynamically stable only in the wurtzite phase. Here, we provide the first experimental evidence of unpredicted extended zinc blend phases (50-60 nm long) embedded in the arms of ZnO wurtzite tetrapods. In particular, decisive evidence is obtained from the one-to-one correlation between high lateral resolution cathodoluminescence spectroscopy, monochromatic contrast maps, and atomic resolution transmission electron microscopy images of ZnO single TPs. This observation is not specific to ZnO and can have a general validity for the understanding of the nucleation mechanisms in semiconducting 3D nanostructures for device applications.

Quantum-confinement effects in InAs-InP core-shell nanowires

We report the detection of quantum confinement in single InAs-InP core-shell nanowires. The wires, having an InAs core with ∼25 nm diameter, are characterized by emission spectra in which two peaks are identified under high excitation intensity conditions. The peaks are caused by emission from the ground and excited quantized levels, due to quantum confinement in the plane perpendicular to the nanowire axis. We have identified different energy contributions in the emission spectra, related to the wurtzite structure of the wires, the strain between the wurtzite core and the shell, and the confinement energy of the InAs core. Calculations based on six-band strain-dependent [Formula: see text] theory allow the theoretical estimation of the confined energy states in such materials, and we found these results to be in good agreement with those from the photoluminescence studies.

Observation of a wurtzite form of gallium arsenide

After a pressure decrease to ambient, the high-pressure SC16 phase of GaAs is found to transform to the hexagonal wurtzite structure. This has been suggested for GaAs in calculations but never previously observed experimentally. Wurtzite-GaAs is found to be stable at ambient pressures at temperatures up to 473 K, with a structure that is only slightly distorted from ideal. On recompression, the ratio is constant with pressure and wurtzite-GaAs transforms to the orthorhombic phase at 18.7(9) GPa.

Hole-mediated stabilization of cubic GaN

We propose here a new approach to stabilize the cubic zinc-blende (ZB) phase by incorporation of impurities into a compound that has a hexagonal wurtzite (WZ) ground state. For GaN, we suggest that this can be achieved by adding 3d acceptors such as Zn, Mn, or Cu because the p-d repulsion between the 3d impurity levels and the valence band maximum is larger in the ZB phase than in the WZ phase. This makes the top of the valence states of the ZB structure higher than that of the WZ structure. As holes are created at the top of the valence states by the impurities, it will cost less energy for the holes to be created in the ZB structure, thus stabilizing this phase. Our first-principles total energy calculations confirm this novel idea.