Efficient Green Emission from Wurtzite Al xIn1- xP Nanowires

Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al _xIn_{1- x}P nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite Al _xIn_{1- x}P using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires

Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/In_xGa_1-xP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (Γ_8c-Γ_9v) to direct (Γ_7c-Γ_9v) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite In_xGa_1-xP.

Hund's Rule-Driven Dzyaloshinskii-Moriya Interaction at 3d-5d Interfaces

Using relativistic first-principles calculations, we show that the chemical trend of the Dzyaloshinskii-Moriya interaction (DMI) in 3d-5d ultrathin films follows Hund's first rule with a tendency similar to their magnetic moments in either the unsupported 3d monolayers or 3d-5d interfaces. We demonstrate that, besides the spin-orbit coupling (SOC) effect in inversion asymmetric noncollinear magnetic systems, the driving force is the 3d orbital occupations and their spin-flip mixing processes with the spin-orbit active 5d states control directly the sign and magnitude of the DMI. The magnetic chirality changes are discussed in the light of the interplay between SOC, Hund's first rule, and the crystal-field splitting of d orbitals.

Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.

Amorphous Ge quantum dots embedded in crystalline Si: ab initio results

We study amorphous Ge quantum dots embedded in a crystalline Si matrix through structure modeling and simulation using ab initio density functional theory including spin-orbit interaction and quasiparticle effects. Three models are generated by replacing a spherical region within diamond Si by Ge atoms and creating a disordered bond network with appropriate density inside the Ge quantum dot. After total-energy optimisations of the atomic geometry we compute the electronic and optical properties. We find three major effects: (i) the resulting nanostructures adopt a type-I heterostructure character; (ii) the lowest optical transitions occur only within the Ge quantum dots, and do not involve or cross the Ge-Si interface. (iii) for larger amorphous Ge quantum dots, with diameters of about 2.0 and 2.7 nm, absorption peaks appear in the mid-infrared spectral region. These are promising candidates for intense luminescence at photon energies below the gap energy of bulk Ge.

Nonmetallic substrates for growth of silicene: an ab initio prediction

By means of first-principles calculations we predict the stability of silicene layers as buckled honeycomb lattices on Cl-passivated Si(1 1 1) and clean CaF2(1 1 1) surfaces. The van der Waals interaction between silicene and the inert substrate stabilizes the adsorbate system while not destroying the Si pz-derived linear bands forming Dirac cones at the Brillouin zone corners. Only small gaps of about 3 and 52 meV are opened.

Direct band gap wurtzite gallium phosphide nanowires

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555-690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality.

Influence of on-site Coulomb interaction U on properties of MnO(001)2 × 1 and NiO(001)2 × 1 surfaces

We investigate the non-polar and antiferromagnetic (001) surfaces of MnO and NiO crystallizing in the antiferromagnetic type-II phase by means of spin-polarized density functional theory. Results are presented for surface energy, magnetization, and electronic structure. Besides the comparison of the two materials with differently filled minority-spin t(2g) shells we study the influence of exchange-correlation treatment within two schemes, the generalized gradient approximation GGA and the GGA + U scheme including an effective on-site d-d interaction U.

Influence of Strong Electron Correlation on Magnetism in Transition-Metal Doped Si Nanocrystals

We studied the influence of strong electron correlation on magnetic properties of Si nanocrystals doped with the transition metal (TM) atoms Mn and Fe. Different approaches to describe exchange and correlation (XC) effects are compared within a density-functional framework. Beside a semilocal treatment, two different methods to include the influence of electron correlation on the localized TM 3d states are studied. They are based on XC functionals with the inclusion of on-site Coulomb repulsion or short-range screened exchange. We demonstrate a strong dependence of both electronic structure and magnetization on the used XC functional. The inclusion of strong correlation drastically changes position and occupation of the TM or TM-Si-bond-derived levels as well as the total magnetic moments.

Characteristic energies and shifts in optical spectra of colloidal IV-VI semiconductor nanocrystals

We investigate structural, electronic, and optical properties of colloidal IV-VI semiconductor quantum dots (QDs) using an ab initio pseudopotential method and a repeated supercell approximation. In particular, rhombo-cuboctahedral quantum dots consisting of PbSe, PbTe, and SnTe with a pseudohydrogen passivation shell are investigated for different QD sizes. The obtained dependence of the confinement energy on the QD size questions the use of three-dimensional spherical potential well models for small QD structures. The predicted band gaps are almost in agreement with measured values. The calculated Franck-Condon shifts vary significantly with the QD size. Only for PbSe they may explain the Stokes shift between optical absorption and emission. For the tellurides, spectral properties such as the oscillator strength are more important.

Structure of si(111)-in nanowires determined from the midinfrared optical response

The anisotropic optical response of Si(111)-(4x1)/(8x2)-In in the midinfrared, where ab initio studies predict significant changes in the band structure between competing models of this important quasi-1D system, has been measured using infrared spectroscopic ellipsometry (IRSE) and reflection anisotropy spectroscopy (RAS). Both IRSE and RAS of the (8x2) phase show that the anisotropic Drude tail of the (4x1) phase is replaced by two peaks at 0.50 and 0.72 eV, which appear in ab initio optical response calculations for the hexagon model of the (8x2) structure, but not the trimer model.

Influence of SiO2 matrix on electronic and optical properties of Si nanocrystals

Based on ab initio density functional theory we present electronic properties and the optical response for Si nanocrystals embedded in amorphous SiO(2) networks. Quasi-spherical dots with diameters from 0.8 to 1.6 nm are investigated. The results for Si nanocrystals embedded in SiO(2) are compared with corresponding results for hydrogenated Si nanocrystals of the same size. The calculations show the influence of the interface between nanocrystal and matrix on the electronic properties. The results are compared with recent experimental data and discussed in detail. As striking features, strong reductions of the gaps and their diameter variation are predicted due to the oxide presence. Electronic confinement mainly influences the absorption edge while at higher photon energies only broad peaks at almost fixed positions occur.

Anomalous angular dependence of the dynamic structure factor near Bragg reflections: graphite

The electron energy-loss function of graphite is studied for momentum transfers q beyond the first Brillouin zone. We find that near Bragg reflections the spectra can change drastically for very small variations in q. The effect is investigated by means of first principle calculations in the random phase approximation and confirmed by inelastic x-ray scattering measurements of the dynamic structure factor S(q, omega). We demonstrate that this effect is governed by crystal local field effects and the stacking of graphite. It is traced back to a strong coupling between excitations at small and large momentum transfers.

Atomic nanowires on the Pt/Ge(001) surface: buried Pt-Ge versus top Pt-Pt chains

Combining total-energy calculations, electronic-structure studies, and scanning tunneling microscopy (STM), we demonstrate that the observed one-dimensional nanowires are composed of Pt-induced Ge structures instead of Pt chains. Pt-Ge bonds are favored versus Pt-Pt ones. The novel tetramer-dimer-chain model explains STM features and the differential conductivity. The conduction path is related to the chain of alternating Pt-Ge atoms.

Electronic excitations of glycine, alanine, and cysteine conformers from first-principles calculations

The electronic and optical properties are studied for three conformers of amino acid molecules using gradient-corrected (spin-) density functional theory within a projector-augmented wave scheme and the supercell method. We investigate single-particle excitations such as ionization energies and electron affinities as well as pair excitations. By comparing eigenvalues resulting from several local and nonlocal energy functionals, the influence of treatment of exchange and correlation is demonstrated. The excitations are described within the Delta-self-consistent field method with an occupation number constraint to obtain excitation energies and Stokes shifts. The results are used to also discuss the optical absorption properties. In contrast to the lowest single- and two-particle excitation energies, remarkable changes are found in absorption spectra in dependence on the conformation of the molecule geometry.

Hexagon versus trimer formation in in nanowires on Si(111): energetics and quantum conductance

The structural and electronic properties of the quasi-one-dimensional In/Si(111) surface system are calculated from first principles. It is found that the symmetry lowering of the In chains is energetically favorable, provided neighboring nanowires are correlated, giving rise to a doubling of the surface unit cell both along and perpendicular to the chain direction. The recently suggested formation of hexagons within the In nanowires [C. González, F. Flores, and J. Ortega, Phys. Rev. Lett. 96, 136101 (2006)]--in clear contrast to the trimer formation proposed earlier-drastically modifies the electron transport along the In chains, in agreement with experiment.

DFT studies using supercells and projector-augmented waves for structure, energetics, and dynamics of glycine, alanine, and cysteine

A large variety of gas phase conformations of the amino acids glycine, alanine, and cysteine is studied by numerically efficient semi-local gradient-corrected density functional theory calculations using a projector-augmented wave scheme and periodic boundary conditions. Equilibrium geometries, conformational energies, dipole moments, vibrational modes, and IR optical spectra are calculated from first principles. A comparison of our results with values obtained from quantum-chemistry methods with localized basis sets and nonlocal exchange-correlation functionals as well as with experimental data is made. For conformations containing strong intramolecular hydrogen bonds deviations in their energetic ordering occur, which are traced back to different treatments of spatial nonlocality in the exchange-correlation functional. However, even for these structures, the comparison of calculated and measured vibrational frequencies shows satisfying agreement.

Attracted by long-range electron correlation: adenine on graphite

The adsorption of adenine on graphite is analyzed from first-principles calculations as a model case for the interaction between organic molecules and chemically inert surfaces. Within density-functional theory we find no chemical bonding due to ionic or covalent interactions, only a very weak attraction at distances beyond the equilibrium position due to the lowering of the kinetic energy of the valence electrons. Electron exchange and correlation effects are much more important for the stabilization of the adsystem. They are modeled by the local density or generalized gradient approximation supplemented by the London dispersion formula for the van der Waals interaction.

Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations

A comprehensive density-functional theory (DFT) study of the atomic structure, electronic properties, and optical response of the Si(001) surface at the initial stages of oxidation is presented. The most favored adsorption position of a single O atom on top of the (4 x 2)-reconstructed Si(001) surface is found at the back-bond of the "down" Si dimer atom. There is no energy barrier for oxygen insertion into this bond. The ionization energy of the surface reaches a maximum when the oxidation of the second Si monolayer starts. Oxidation leads to an increase of the energy gap between occupied and empty surface states. The calculated reflectance anisotropy spectroscopy (RAS) data in comparison with experiment suggest a considerable amount of surface disorder already after oxidation of the first monolayer.

Coulombic amino group-metal bonding: adsorption of adenine on Cu110

The interaction between molecular amino groups and metal surfaces is analyzed from first-principles calculations using the adsorption of adenine on Cu110 as a model case. The amino group nitrogens are found to adsorb on top of the surface copper atoms. However, the bonding clearly cannot be explained in terms of covalent interactions. Instead, we find it to be largely determined by mutual polarization and Coulomb interaction between substrate and adsorbate.

Optical absorption of water: coulomb effects versus hydrogen bonding

The optical spectrum of water is not well understood. For example, the main absorption peak shifts upwards by 1.3 eV upon condensation, which is contrary to the behavior expected from aggregation-induced broadening of molecular levels. We investigate theoretically the effects of electron-electron and electron-hole correlations, finding that condensation leads to delocalization of the exciton onto nearby hydrogen-bonded molecules. This reduces its binding energy and has a dramatic impact on the line shape. The calculated spectrum is in excellent agreement with experiment.

Long-range surface reconstruction: Si(110)-(16 x 2)

A variety of reconstruction models is studied for the Si(110)-(16 x 2) surface using first-principles calculations. Assuming appropriate rebonding of edge atoms and surface chains buckled in antiphase, we show that steps along the [112] direction yielding a trench indeed lower the surface energy. We explain the long-range surface reconstruction and develop a geometry model based on steps, adatoms, tetramers, and interstitials. The model is able to explain the stripes of paired pentagons seen obviously in empty-state scanning tunneling microscopy images.

Energetics of Si(001) surfaces exposed to electric fields and charge injection

We perform density-functional calculations on the influence of external electric fields and electrons or holes injected into surface states on the relative stability of c(4x2) and p(2x2) reconstructed Si(001) surfaces. It is shown that an electric field parallel to the [001] direction or the insertion of electrons into surface states favors the formation of p(2x2) periodicities. Our results explain recent experimental studies reporting changes of surface reconstruction of Si and Ge(001) surfaces induced by the scanning tunneling microscope and the occurrence of p(2x2) reconstructions on (001) surfaces of n-doped Si.

Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials

We present equilibrium geometries, vibrational modes, dipole moments, ionization energies, electron affinities, and optical absorption spectra of the DNA base molecules adenine, thymine, guanine, and cytosine calculated from first principles. The comparison of our results with experimental data and results obtained by using quantum chemistry methods show that in specific cases gradient-corrected density-functional theory (DFT-GGA) calculations using ultrasoft pseudopotentials and a plane-wave basis may be a numerically efficient and accurate alternative to methods employing localized orbitals for the expansion of the electron wave functions.

InP(001)-(2 x 1) surface: a hydrogen stabilized structure

The InP(001)(2 x 1) surface has been reported to consist of a semiconducting monolayer of buckled phosphorus dimers. This apparent violation of the electron counting principle was explained by effects of strong electron correlation. Combining first-principles calculations with reflectance anisotropy spectroscopy and LEED experiments, we find that the (2 x 1) reconstruction is not at all a clean surface: it is induced by hydrogen adsorbed in an alternating sequence on the buckled P dimers. Thus, the microscopic structure of the InP growth plane relevant to standard gas phase epitaxy conditions is resolved and shown to obey the electron counting rule.

Excitation energies and radiative lifetimes of Ge1-xSix nanocrystals: alloying versus confinement effects

The composition dependence of the optical and structural properties of Ge1-xSix nanocrystals is investigated by means of ab initio total-energy and electronic-structure calculations. A trimodal distribution of the Ge-Ge, Ge-Si, and Si-Si bond lengths is found. The pair-excitation energies and the Stokes shift are calculated taking into account many-body and alloying effects. They show a distinct nonlinear behavior with changing composition. The radiative lifetime decreases exponentially with increasing Ge molar fraction. The theoretical results explain recent photoluminescence measurements. They show that composition and confinement effects can be discussed nearly separately.

Bulk excitonic effects in surface optical spectra

We calculate the surface optical properties of the passivated Si(110) surface using a real-space multigrid technique and ab initio pseudopotentials. Rather than from the usual eigenvalue representation, the macroscopic polarizability is obtained from the solution of an initial-value problem, which allows inclusion of excitonic and local-field effects in addition to the electronic self-energy in the surface calculations. It is shown that the electron-hole attraction is largely responsible for the peculiar line shape of the surface reflectance anisotropy.

Origin of the different reconstructions of diamond, Si, and Ge(111) surfaces

Ab initio calculations of the 2x1, c(2x8), and 7x7 reconstructions of the diamond, Si, and Ge(111) surfaces are reported. The pi-bonded chain, adatom, and dimer-adatom-stacking fault models are studied to understand the driving forces for a certain reconstruction. The resulting energetics, geometries, and band structures are compared for the elemental semiconductors with different atomic sizes, and chemical trends are derived. We show why the lowest-energy reconstructions are different for the group-IV materials considered.

Quantum-kinetic theory of hot luminescence from pulse-excited semiconductors

A theory of time-resolved luminescence from photoexcited semiconductors is presented. It combines quantum kinetics of hot-carrier relaxation and quantum theory of spontaneous emission. Model calculations show the "transfer" of photoluminescence from the initial signal at the pump frequency via subsequent phonon replicas until the buildup of luminescence at the excitonic resonance. Time-resolved photoluminescence is predicted to be a sensitive measure of electron-LO-phonon quantum kinetics and bottleneck effects.

Field-induced delocalization and Zener breakdown in semiconductor superlattices

We investigate the energy spectrum and the electron dynamics of a band in a semiconductor superlattice as a function of the electric field. Linear optical spectroscopy shows that, for high fields, the well-known localization of the Bloch states is followed by a field-induced delocalization, associated with Zener breakdown. Using time-resolved measurements, we observe Bloch oscillations in a regime where they are damped by Zener breakdown.