Visible photoluminescence from silicon-backbone polymers

Fluorescence relaxation kinetics of poly(methylphenylsilane) film and nanocomposites

A comparative study of fluorescence relaxation kinetics of σ-conjugated poly(methylphenylsilane) (PMPS) polymer film and nanocomposites has been performed by ultrafast time-gated fluorescence measurements at various temperatures. Investigations have revealed a fine structure of excitonic σ-σ* band. We attribute this structure to emission from two spatially independent states with different ordering of the polymer chain segments, type gauche and trans conformations. In contrary to a more ordered polymer poly(di-n-hexylsilane), no clear thermochromic transition has been detected in PMPS film; however, the trans band intensity increases with temperature and with excitation wavelength, but it is absent when polymer is incorporated into nanopores of small diameter.

Annealing Studies of Visible Light Emission from Silicon Nanocrystals Produced by Implantation

The annealing behavior of silicon implanted SiO2 layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 °C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 μs - 0.3 ms).

Ultraviolet photoinduced weak bonds in aryl-substituted polysilanes

The susceptibility of aryl-substituted polysilylenes to photodegradation by ultraviolet (UV) radiation is examined on the prototypical materials poly[methyl(phenyl)silylene] (PMPSi) and poly[(biphenyl-4-yl)methylsilylene] (PBMSi). We extend the scope of our last paper (Schauer et al 2004 Polym. Degrad. Stabil. 84 383) with the elucidation of the degradation mechanisms for two different degradation wavelengths: 266 and 355 nm. The main purpose of this paper was to study photoluminescence (PL) after major degradation, predominantly in long-wavelength range 400-600 nm, studying the disorder, dangling bonds (DBs) and weak bonds (WBs) created by the degradation process. We claim that the PL of the 500-600 nm band is related to the existence of WBs on the Si chain and originates in the σ(*)-σ exciton migration at room temperature by diffusion, free electron-hole formation, trapping in WBs and subsequent radiative recombination by tunnelling. Increase of the normalized PL 520-540 nm band after UV degradation can be then evaluated as the increase of the density of states (DOS) of WBs. The efficiency of the WB creation in PMPSi is greater for 266 nm irradiation, supporting the notion of the suppressed exciton transport compared to the less energetical photon of 355 nm, where the WB creation is lowered due to the exciton migration to longer segments and/or already existing defects. For PBMSi the WB creation kinetics for 355 nm degradation is similar to that of PMPSi. The 266 nm degradation results then support the model calculations of DB and WB reconstruction in the more rigid Si skeleton.