Understanding the Effects of a High Surface Area Nanostructured Indium Tin Oxide Electrode on Organic Solar Cell Performance

Organic solar cells (OSCs) are a complex assembly of disparate materials, each with a precise function within the device. Typically, the electrodes are flat, and the device is fabricated through a layering approach of the interfacial layers and photoactive materials. This work explores the integration of high surface area transparent electrodes to investigate the possible role(s) a three-dimensional electrode could take within an OSC, with a BHJ composed of a donor-acceptor combination with a high degree of electron and hole mobility mismatch. Nanotree indium tin oxide (ITO) electrodes were prepared via glancing angle deposition, structures that were previously demonstrated to be single-crystalline. A thin layer of zinc oxide was deposited on the ITO nanotrees via atomic layer deposition, followed by a self-assembled monolayer of C₆₀-based molecules that was bound to the zinc oxide surface through a carboxylic acid group. Infiltration of these functionalized ITO nanotrees with the photoactive layer, the bulk heterojunction comprising PC₇₁BM and a high hole mobility low band gap polymer (PDPPTT-T-TT), led to families of devices that were analyzed for the effect of nanotree height. When the height was varied from 0 to 50, 75, 100, and 120 nm, statistically significant differences in device performance were noted with the maximum device efficiencies observed with a nanotree height of 75 nm. From analysis of these results, it was found that the intrinsic mobility mismatch between the donor and acceptor phases could be compensated for when the electron collection length was reduced relative to the hole collection length, resulting in more balanced charge extraction and reduced recombination, leading to improved efficiencies. However, as the ITO nanotrees increased in height and branching, the decrease in electron collection length was offset by an increase in hole collection length and potential deleterious electric field redistribution effects, resulting in decreased efficiency.

Phosphorus Pentachloride Initiated Functionalization of Silicon Nanocrystals

Phosphorus pentachloride (PCl₅) has long been used to chlorinate hydrocarbons. It has also been applied in silicon surface chemistry to facilitate alkylation via a two-step halogenation/Grignard route. Here we report a study of the reaction of PCl₅ with hydride-terminated silicon nanocrystals (H-SiNCs). An examination of the reaction mechanism has allowed us to establish a functionalization protocol that uses PCl₅ as a surface radical initiator to introduce alkyl and alkenyl moieties to the surface of H-SiNCs. The reaction proceeds quickly in a single step, at room temperature and the functionalized silicon nanocrystals retained their morphology and crystallinity. The resulting materials exhibited size-dependent photoluminescence that was approximately 3× as bright as that observed for thermally hydrosilylated SiNCs. Furthermore, the absolute PL quantum yield (AQY) was more than double. The high AQY is expected to enable SiNCs to compete with chalcogenide-based quantum dots in various applications.

Solution-processed zinc phosphide (α-Zn3P2) colloidal semiconducting nanocrystals for thin film photovoltaic applications

Zinc phosphide (Zn3P2) is a promising earth-abundant material for thin film photovoltaic applications, due to strong optical absorption and near ideal band gap. In this work, crystalline zinc phosphide nanoparticles are synthesized using dimethylzinc and tri-n-octylphosphine as precursors. Transmission electron microscopy and X-ray diffraction data show that these nanoparticles have an average diameter of ∼8 nm and adopt the crystalline structure of tetragonal α-Zn3P2. The optical band gap is found to increase by 0.5 eV relative to bulk Zn3P2, while there is an asymmetric shift in the conduction and valence band levels. Utilizing layer-by-layer deposition of Zn3P2 nanoparticle films, heterojunction devices consisting of ITO/ZnO/Zn3P2/MoO3/Ag are fabricated and tested for photovoltaic performance. The devices are found to exhibit excellent rectification behavior (rectification ratio of 600) and strong photosensitivity (on/off ratio of ∼10(2)). X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy analyses reveal the presence of a thin 1.5 nm phosphorus shell passivating the surface of the Zn3P2 nanoparticles. This shell is believed to form during the nanoparticle synthesis.