Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface

Real-Space Pseudopotential Method for the Calculation of Third-Row Elements X-ray Photoelectron Spectroscopic Signatures

X-ray photoelectron spectroscopy (XPS) is a powerful characterization technique that unveils subtle chemical environment differences via core-electron binding energy (CEBE) analysis. We extend the development of real-space pseudopotential methods to calculating 1s, 2s, and 2p3/2 CEBEs of third-row elements (S, P, and Si) within the framework of Kohn-Sham density-functional theory (KS-DFT). The new approach systematically prevents variational collapse and simplifies core-excited orbital selection within dense energy level distributions. However, careful error cancellation analysis is required to achieve accuracy comparable to all-electron methods and experiments. Combined with real-space KS-DFT implementation, this development enables large-scale simulations with both Dirichlet boundary conditions and periodic boundary conditions.

Real-Space Pseudopotential Method for the Calculation of 1s Core-Level Binding Energies

We systematically studied a real-space pesudopotential method for the calculation of 1s core–electron binding energies of second-row elements B, C, N, and O within the framework of Kohn–Sham density functional theory (KS-DFT). With Dirichlet boundary conditions, pseudopotential calculations can provide accurate core–electron binding energies for molecular systems, when compared with the results from all-electron calculations and experiments. Furthermore, we report that with one simple additional nonself-consistent calculation as a refinement step using a hybrid exchange-correlation functional, we can generally improve the accuracy of binding energy shifts, promising a strategy for improving accuracy at a much lower computational cost. The specializations in the present approach, combined with our efficient real-space KS-DFT implementation, provide key advantages for calculating accurate core–electron binding energies of large-scale systems.

Impermeable Graphene Oxide Protects Silicon from Oxidation

The presence of a natural silicon oxide (SiO_x) layer over the surface of silicon (Si) has been a roadblock for hybrid semiconductor and organic electronics technology. The presence of an insulating oxide layer is a limiting operational factor, which blocks charge transfer and therefore electrical signals for a range of applications. Etching the SiO_x layer by fluoride solutions leaves a reactive Si-H surface that is only stable for few hours before it starts reoxidizing under ambient conditions. Controlled passivation of silicon is also of key importance for improving Si photovoltaic efficiency. Here, we show that a thin layer of graphene oxide (GO_x) prevents Si surfaces from oxidation under ambient conditions for more than 30 days. In addition, we show that the protective GO_x layer can be modified with molecules enabling a functional surface that allows for further chemical conjugation or connections with upper electrodes, while preserving the underneath Si in a nonoxidized form. The GO_x layer can be switched electrochemically to reduced graphene oxide, allowing the development of a dynamic material for molecular electronics technologies. These findings demonstrate that 2D materials are alternatives to organic self-assembled monolayers that are typically used to protect and tune the properties of Si and open a realm of possibilities that combine Si and 2D materials technologies.

Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study

The crystalline-Si/amorphous-SiO₂ (c-Si/a-SiO₂) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO₂ interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containing Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO₂, was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO₂ interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO₂ and c-Si/a-SiO₂ interfaces, the band offset significantly deviates from the experimental values by about 1 eV.

High resolution core level spectroscopy of hydrogen-terminated (1 0 0) diamond

Synchrotron-based photoelectron spectroscopy experiments are presented that address a long standing inconsistency in the treatment of the C1s core level of hydrogen terminated (1 0 0) diamond. Through a comparison of surface and bulk sensitive measurements we show that there is a surface related core level component to lower binding energy of the bulk diamond component; this component has a chemical shift of [Formula: see text] eV which has been attributed to carbon atoms which are part of the hydrogen termination. Additionally, our results indicate that the asymmetry of the hydrogen terminated (1 0 0) diamond C1s core level is an intrinsic aspect of the bulk diamond peak which we have attributed to sub-surface carbon layers.

A first-principles study of As doping at a disordered Si-SiO2 interface

Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles density-functional theory and a continuous random network Monte Carlo method, we investigate electrically active arsenic donors at the interface between silicon and its oxide. Using a realistic model of the disordered interface, we find that a small percentage (on the order of ∼10%) of the atomic sites in the first few monolayers on the silicon side of the interface are energetically favourable for segregation, and that this is controlled by the local bonding and local strain of the defect centre. We also find that there is a long-range quantum confinement effect due to the interface, which results in an energy barrier for dopant segregation, but that this barrier is small in comparison to the effect of the local environment. Finally, we consider the extent to which the energetics of segregation can be controlled by the application of strain to the interface.

Finite-size supercell correction for charged defects at surfaces and interfaces

A finite-size supercell correction scheme is introduced for the formation energy of charged defects at surfaces and interfaces. The scheme combines classical electrostatics with the dielectric profile and the electrostatic potential extracted from the electronic-structure calculation. Spurious electrostatic interactions are removed while retaining the dielectric and quantum-mechanical features of the system of interest, which may have no interface (bulk), a single interface or surface, or two interfaces. A pertinent extrapolation scheme validates the proposed corrections. Applications to the charged Cl vacancy at the surface of NaCl and to the dangling bond at the Si(100) surface show that the corrected formation energies are largely independent of the supercell dimensions and of the size of the vacuum region.

Quantifying through-space charge transfer dynamics in π-coupled molecular systems

Understanding the role of intermolecular interaction on through-space charge transfer characteristics in π-stacked molecular systems is central to the rational design of electronic materials. However, a quantitative study of charge transfer in such systems is often difficult because of poor control over molecular morphology. Here we use the core-hole clock implementation of resonant photoemission spectroscopy to study the femtosecond charge-transfer dynamics in cyclophanes, which consist of two precisely stacked π-systems held together by aliphatic chains. We study two systems, [2,2]paracyclophane (22PCP) and [4,4]paracyclophane (44PCP), with inter-ring separations of 3.0 and 4.0 Å, respectively. We find that charge transfer across the π-coupled system of 44PCP is 20 times slower than in 22PCP. We attribute this difference to the decreased inter-ring electronic coupling in 44PCP. These measurements illustrate the use of core-hole clock spectroscopy as a general tool for quantifying through-space coupling in π-stacked systems.

Burning match oxidation process of silicon nanowires screened at the atomic scale

Silicon oxide nanowires hold great promise for functional nanoscale electronics. Here, we investigate the oxidation of straight, massively parallel, metallic Si nanowires. We show that the oxidation process starts at the Si NW terminations and develops like a burning match. While the spectroscopic signatures on the virgin, metallic part, are unaltered we identify four new oxidation states on the oxidized part, which show a gap opening, thus revealing the formation of a transverse internal nanojunction.

Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors

We present a methodology for the finite-element discretization of nanoscaled semiconductor devices with atomic resolution. The meshing strategy is based on the use of patterns to decompose the unit cell of the underlying crystallographic structures producing unstructured tetrahedral meshes. The unit cells of the bulk semiconductors and, more importantly, of the interfaces between the substrate and the gate dielectric have been extracted from classical molecular dynamics and density functional theory simulations. A Monte Carlo approach has been then used to place the dopants in nodes of the crystal, replacing silicon atoms. The thus created "atomistic" meshes are used to simulate an ensemble of microscopically different double-gate Si metal-oxide-semiconductor field-effect transistors and the transition region at the Si/SiO_{2} interface. In addition, a methodology to approximate amorphous dielectrics is also presented.

Probing enantioselectivity with x-ray photoelectron spectroscopy and density functional theory

The enantioselectivity of gold is investigated by x-ray photoelectron spectroscopy (XPS) and density functional theory (DFT). Cysteine molecules on a chiral Au(17 11 9);{S} surface show enantiospecific core level binding energies in the amino and in the thiol group. The sign and order of magnitude of the XPS core level shifts is reproduced by DFT. Identical preparations of D- and L-cysteine layers lead to D-cysteine molecules in the pure NH2 form, while a small portion of L-cysteine molecules maintains a hydrogen rich amino group (NH3). This implies enantiospecific adsorption reaction pathways and is consistent with DFT that indicates an activated hydrogen abstraction reaction from the amino group, which is downhill for D-cysteine.

Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces

Using a first-principles approach, we investigate the origin of the fine structure in Si 2p photoelectron spectra at the Si(100)-(2 x 1) surface and at the Si(100)-SiO2 interface. Calculated and measured shifts show very good agreement for both systems. By using maximally localized Wannier functions, we clearly identify the shifts resulting from the electronegativity of second-neighbor atoms. The other shifts are then found to be proportional to the average bond-length variation around the Si atom. Hence, in combination with accurate modeling, photoelectron spectroscopy can provide a direct measure of the strain field at the atomic scale.

X-ray-induced production of gold nanoparticles on a SiO(2)/Si system and in a poly(methyl methacrylate) matrix

Prolonged exposure to X-rays of HAuCl(4) deposited from an aqueous solution onto a SiO(2)/Si substrate or into a poly(methyl methacrylate) (PMMA) matrix induces reduction of the Au(3+) ions to Au(0) and subsequent nucleation to gold nanoclusters as recorded by X-ray photoelectron spectroscopy. The corresponding major oxidation product is determined as chlorine {HAuCl(4)(ads) + X-rays --> Au(ads) + (3/2)Cl(2)(ads) + HCl(ads)}, which is initially adsorbed onto the surface but eventually diffuses out of the system into the vacuum. The reduced gold atoms aggregate (three-dimensionally) into gold nanoclusters as evidenced by the variation in the binding energy during X-ray exposure, which starts as 1.3 eV but approaches a value that is 0.5 eV higher than that of the bulk gold. The disappearance of the oxidation product (Cl2p signal) and the growth of the nanoclusters (related to the measured binding energy difference between the Si2p of the oxide and Au4f of the reduced gold) exhibit first-order kinetics which is approximately 3 times slower than the reduction of Au(3+), indicating that both of the former processes are diffusion controlled. Similarly, gold ions incorporated into PMMA can also be reduced and aggregated to gold nanoclusters using 254 nm deep UV irradiation in air evidenced by UV-vis-NIR absorption spectrocopy.

Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon

Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

Transition structure at the Si(100)-SiO2 interface

We characterize the transition structure at the Si(100)-SiO2 interface by addressing the inverse ion-scattering problem. We achieve sensitivity to Si displacements at the interface by carrying out ion-scattering measurements in the channeling geometry for varying ion energies. To interpret our experimental results, we generate realistic atomic-scale models using a first-principles approach and carry out ion-scattering simulations based on classical interatomic potentials. Silicon displacements larger than 0.09 A are found to propagate for three layers into the Si substrate, ruling out a transition structure with regularly ordered O bridges, as recently proposed.

First principles molecular dynamics of dense plasmas

Ab initio molecular dynamics calculations are performed for the equation of state of aluminum, spanning condensed matter and dense plasma regimes. Electronic exchange and correlation are included with either a zero- or finite-temperature local density approximation potential. Standard methods are extended to above the Fermi temperature by using final state pseudopotentials to describe thermally excited ion cores. The predicted Hugoniot equation of state agrees well with earlier plasma theories and with experiment for temperatures from 0 to 3 x 10(6) K.

Dangling bond defects at Si-SiO2 interfaces: atomic structure of the P(b1) center

Using a first-principles approach, we characterize dangling bond defects at Si-SiO2 interfaces by calculating hyperfine parameters for several relaxed structures. Interface models, in which defect Si atoms remain close to crystalline sites of the substrate upon relaxation, successfully describe P(b) and P(b0) defects at (111) and (100) interfaces, respectively. On the basis of calculated hyperfine parameters, we discard models of the P(b1) defect containing a first neighbor shell with an O atom or a strained bond. A novel model consisting of an asymmetrically oxidized dimer yields hyperfine parameters in excellent agreement with experiment and is proposed as the structure of the P(b1) center.

Electronic properties of the Si/SiO2 interface from first principles

Unoccupied oxygen p-projected densities of states, calculated from first principles in a model Si/SiO(2) interface, are found to reproduce trends in recent atomic resolution electron energy-loss spectra [D. A. Muller et al., Nature (London) 399, 758 (1999)]. The shape of the unoccupied states and the magnitude of the local energy gap are explicitly related to the number of O second neighbors of a given oxygen atom. The calculated local energy gaps of the oxide become considerably smaller within 0.5 nm of the interface, suggesting that the electronic properties do not change abruptly at the interface.

New structural model for Si/SiO2 interfaces derived from spherosiloxane clusters: implications for Si 2p photoemission spectroscopy

In this Letter, we investigate the Si/SiO(2) interface structure formed by the chemisorption of H8Si8O12 and other spherosiloxane clusters on Si(100). Using transition state calculations, we clearly demonstrate that the clusters do not bond to the Si(100) surface via single vertex attachment as proposed previously, but rather attach via Si-O bond cleavage. This alternative cracked cluster geometry allows us to predict the photoemission features of spherosiloxane clusters on Si(100) without invoking second nearest neighbor effects.

Bonding arrangements at the Si-SiO2 and SiC-SiO2 interfaces and a possible origin of their contrasting properties

We report ab initio calculations designed to explore the relative energetics of different interface bonding structures. We find that, for Si (001), abrupt (no suboxide layer) interfaces generally have lower energy because of the surface geometry and the softness of the Si-O-Si angle. However, two energetically degenerate phases are possible at the nominal interface layer, so that a mix of the two is the likely source of the observed suboxide and dangling bonds. In principle, these effects may be avoidable by low-temperature deposition. In contrast, the topology and geometry of SiC surfaces is not suitable for abrupt interfaces.

Infrared Study of H(10)Si(10)O(15) Chemisorbed on a Si(100)-2x1 Surface

Reflection-absorption infrared spectroscopy of the model interface derived from H(10)Si(10)O(15) on Si(100)-2x1 is presented. The spectra obtained are compared to the H(8)Si(8)O(12)-derived model interface and discussed in terms of the soft X-ray photoemission spectroscopy obtained for cluster-derived interfaces.