Epitaxial growth of manganese on silicon: Volmer-Weber growth on the Si(111) surface

Theoretical Exploration of Properties of Iron-Silicon Interface Constructed by Depositing Fe on Si(111)-(7×7)

Exploring the properties of magnetic metal on the semiconductor surface is of great significance for the application of magnetic recording materials. Herein, DFT calculations are carried out to explore the properties of the iron-silicon interface structures (nFe/DASF) formed by depositing n Fe atoms on the reconstructed Si(111)-(7×7) surface (DASF). The stable nFe/DASF structures are studied in the cases of the adsorption and permeation of Fe atoms on the DASF. In both cases, Fe atoms are not very dispersed and prefer binding with Si atoms rather than the adsorbed Fe atoms, because the Fe-Si interaction is stronger than the Fe-Fe interaction. As the n value increases, the average binding energy (Eb_ave) of Fe generally firstly becomes more negative and then becomes less negative, with the presence of a 7Fe wheel as a stable geometry on the upmost surface. The presence of the 7Fe wheel is attributed to the enhanced Fe-Si interaction in this wheel compared to other geometries. CO adsorption occurs at the central Fe site of the 7Fe wheel which is greatly influenced by the surrounding Si atoms but is little influenced by the additional Fe atoms in the interlayer.

Engineering the Microstructure of Silicon Nanowires by Controlling the Shape of the Metal Catalyst and Composition of the Etchant in a Two-Step MACE Process: An In-Depth Analysis of the Growth Mechanism

In this work, slanted, kinked, and straight silicon nanowires (SiNWs) are fabricated on Si(111) and (100) substrates using a facile two-step metal-assisted chemical etching nanofabrication technique. We systematically investigated the effect of crystallography, morphology of Ag catalyst, and composition of etchant on the etch profile of Ag catalyst on Si(111) and (100) substrates. We found that the movement of AgNPs inside the Si is determined by physiochemical events such as Ag/Ag interaction, Ag/Si contact, and diffusion kinetics. Further, from detailed TEM and micro-Raman spectroscopy analyses, we demonstrate that the metal catalyst moves in the crystallographically preferred etching direction (viz., <100>) only when the interface effect is not predominant. Further, the metal-assisted chemical etching (MACE) system is highly stable at low-concentration plating and etching solutions, but at high concentrations, the system loses its stability and becomes highly random, leading to the movement of Ag catalyst in directions other than ⟨100⟩. In addition, our studies reveal that Ag nanostructures growth on Si(111) and (100) substrates through galvanic displacement is controlled by substrate symmetry and surface bond density. Finally, we demonstrate that by using an optimized balance between the Ag morphology and concentration of the etchant, the angle in slanted SiNWs, kink position in kinked SiNWs, and aspect ratio of straight SiNWs can be controlled judiciously, leading to enhanced optical absorption in the broadband solar spectrum.

The Formation of Barite and Celestite through the Replacement of Gypsum

Barite (BaSO4) and celestite (SrSO4) are the end-members of a nearly ideal solid solution. Most of the exploitable deposits of celestite occur associated with evaporitic sediments which consist of gypsum (CaSO4·2H2O) or anhydrite (CaSO4). Barite, despite having a broader geological distribution is rarely present in these deposits. In this work, we present an experimental study of the interaction between gypsum crystals and aqueous solutions that bear Sr or Ba. This interaction leads to the development of dissolution-crystallization reactions that result in the pseudomorphic replacement of the gypsum crystals by aggregates of celestite or barite, respectively. The monitoring of both replacement reactions shows that they take place at very different rates. Millimeter-sized gypsum crystals in contact with a 0.5 M SrCl2 solution are completely replaced by celestite aggregates in less than 1 day. In contrast, only a thin barite rim replaces gypsum after seven days of interaction of the latter with a 0.5 M BaCl2 solution. We interpret that this marked difference in the kinetics of the two replacement reactions relates the different orientational relationship that exists between the crystals of the two replacing phases and the gypsum substrate. This influence is further modulated by the specific crystal habit of each secondary phase. Thus, the formation of a thin oriented layer of platy barite crystals effectively armors the gypsum surface and prevents its interaction with the Ba-bearing solution, thereby strongly hindering the progress of the replacement reaction. In contrast, the random orientation of celestite crystals with respect to gypsum guarantees that a significant volume of porosity contained in the celestite layer is interconnected, facilitating the continuous communication between the gypsum surface and the fluid phase and guaranteeing the progress of the gypsum-by-celestite replacement.

Shape-controlled synthesis of Au–Pd bimetallic nanocrystals for catalytic applications

This review describes recent progress in the design and synthesis of shape-controlled Au–Pd bimetallic NCs and their emerging catalytic applications.

Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001)

Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

The growth of an ordered Mn layer on the Si(111)- 1 × 1-Ho surface

The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)- 1 × 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)- 1 × 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a [Formula: see text] low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 × 1-Ho and Si(111)-7 × 7 surfaces for Mn deposited at room temperature and at -180 °C.