Experimental and theoretical studies of the electronic structure of TiS2

Charge Transport and Ion Kinetics in 1D TiS2 Structures are Dependent on the Introduction of Selenium Extrinsic Atoms

Improving charge insertion into intercalation hosts is essential for crucial energy and memory technologies. The layered material TiS2 provides a promising template for study, but further development of this compound demands improvement to its ion kinetics. Here, we report the incorporation of Se atoms into TiS2 nanobelts to address barriers related to sluggish ion motion in the material. TiS1.8Se0.2 nanobelts are synthesized through a solid-state method, and structural and electrochemical characterizations reveal that solid solutions based on TiS1.8Se0.2 nanobelts display increased interlayer spacing and electrical conductivity compared to pure TiS2 nanobelts. Cyclic voltammetry and electrochemical impedance spectroscopy indicate that the capacitive behavior of the TiS2 electrode is improved upon Se incorporation, particularly at low depths of discharge in the materials. The presence of Se in the structure can be directly related to an increased pseudocapacitive contribution to electrode behavior at a low Li+ content in the material and thus to improved ion kinetics in the TiS1.8Se0.2 nanobelts.

Probing the photocurrent in two-dimensional titanium disulfide

Generating photocurrent in a condensed matter system involves the excitation, relaxation, and transportation of charge carriers. As such, it is viewed a potent method for probing the dynamics of non-equilibrium carriers and the electronic band structure of solid state materials. In this research, we analyze the photoresponse of the mechanically exfoliated titanium disulfide (TiS2), a transition metal dichalcogenide whose classification as either a semimetal or a semiconductor has been the subject of debate for years. The scanning photocurrent microscopy and the temperature-dependent photoresponse characterization expose the appearance of a photovoltaic current primarily from the metal/TiS2junction in an unbiased sample, while negative photoconductivity due to the bolometric effect is observed in the conductive TiS2channel. The optoelectronic experimental results, combined with electrical transport characterization and angle-resolved photoemission spectroscopy measurements, indicate that the TiS2employed in this study is likely a heavily-doped semiconductor. Our findings unveil the photocurrent generation mechanism of two dimensional TiS2, highlighting its prospective optoelectronic applications in the future.

An Exploration of Sulfur Redox in Lithium Battery Cathodes

Secondary Li-ion batteries have enabled a world of portable electronics and electrification of personal and commercial transportation. However, the charge storage capacity of conventional intercalation cathodes is reaching the theoretical limit set by the stoichiometry of Li in the fully lithiated structure. Increasing the Li:transition metal ratio and consequently involving structural anions in the charge compensation, a mechanism termed anion redox, is a viable method to improve storage capacities. Although anion redox has recently become the front-runner as a next-generation storage mechanism, the concept has been around for quite some time. In this perspective, we explore the contribution of anions in charge compensation mechanisms ranging from intercalation to conversion and the hybrid mechanisms between. We focus our attention on the redox of S because the voltage required to reach S redox lies within the electrolyte stability window, which removes the convoluting factors caused by the side reactions that plague the oxides. We highlight examples of S redox in cathode materials exhibiting varying degrees of anion involvement with a particular focus on the structural effects. We call attention to those with intermediate anion contribution to redox and the hybrid intercalation- and conversion-type structural mechanism at play that takes advantage of the positives of both mechanistic types to increase storage capacity while maintaining good reversibility. The hybrid mechanisms often invoke the formation of persulfides, and so a survey of binary and ternary materials containing persulfide moieties is presented to provide context for materials that show thermodynamically stable persulfide moieties.

Anionic Redox Regulated via Metal-Ligand Combinations in Layered Sulfides

The increasing demand for energy storage is calling for improvements in cathode performance. In traditional layered cathodes, the higher energy of the metal 3d over the O 2p orbital results in one-band cationic redox; capacity solely from cations cannot meet the needs for higher energy density. Emerging anionic redox chemistry is promising to access higher capacity. In recent studies, the low-lying O nonbonding 2p orbital was designed to activate one-band oxygen redox, but they are still accompanied by reversibility problems like oxygen loss, irreversible cation migration, and voltage decay. Herein, by regulating the metal-ligand energy level, both extra capacities provided by anionic redox and highly reversible anionic redox process are realized in NaCr_{1- y} V_y S₂ system. The simultaneous cationic and anionic redox of Cr/V and S is observed by in situ X-ray absorption near edge structure (XANES). Under high d-p hybridization, the strong covalent interaction stabilizes the holes on the anions, prevents irreversible dimerization and cation migration, and restrains voltage hysteresis and voltage decay. The work provides a fundamental understanding of highly reversible anionic redox in layered compounds, and demonstrates the feasibility of anionic redox chemistry based on hybridized bands with d-p covalence.

HfS2 and TiS2 Monolayers with Adsorbed C, N, P Atoms: A First Principles Study

First principles density functional theory was used to study the energetic, structural, and electronic properties of HfS 2 and TiS 2 materials in their bulk, pristine monolayer, as well as in the monolayer structure with the adsorbed C, N, and P atoms. It is shown that the HfS 2 monolayer remains a semiconductor while TiS 2 changes from semiconductor to metallic behavior after the atomic adsorption. The interaction with the external atoms introduces localized levels inside the band gap of the pristine monolayers, significantly altering their electronic properties, with important consequences on the practical use of these materials in real devices. These results emphasize the importance of considering the interaction of these 2D materials with common external atomic or molecular species.

Chemical bonds in intercalation compounds CuxTiCh2 (Ch = S, Te)

A thorough study of the chemical bonding between intercalated copper and host lattice TiCh₂ (Ch = S, Te) was performed. In order to separate the contributions of the copper, titanium, and chalcogen states into the electronic structure of the valence band, photoelectron spectroscopy in nonresonant and resonant (Cu 3p-3d and Ti 2p-3d) excitation modes was used. It is shown that the ionicity of the chemical bond between copper and host lattice is decreased in the TiS₂ → TiSe₂ → TiTe₂ row. In Cu_xTiS₂, copper atoms form the chemical bond with TiCh₂ host lattice, while in Cu_xTiTe₂ directly with tellurium atoms.

Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition

Phase-controlled synthesis of two-dimensional (2D) transition-metal chalcogenides (TMCs) at low temperatures with a precise thickness control has to date been rarely reported. Here, we report on a process for the phase-controlled synthesis of TiS₂ (metallic) and TiS₃ (semiconducting) nanolayers by atomic layer deposition (ALD) with precise thickness control. The phase control has been obtained by carefully tuning the deposition temperature and coreactant composition during ALD. In all cases, characteristic self-limiting ALD growth behavior with a growth per cycle (GPC) of ∼0.16 nm per cycle was observed. TiS₂ was prepared at 100 °C using H₂S gas as coreactant and was also observed using H₂S plasma as a coreactant at growth temperatures between 150 and 200 °C. TiS₃ was synthesized only at 100 °C using H₂S plasma as the coreactant. The S₂ species in the H₂S plasma, as observed by optical emission spectroscopy, has been speculated to lead to the formation of the TiS₃ phase at low temperatures. The control between the synthesis of TiS₂ and TiS₃ was elucidated by Raman spectroscopy, X-ray photoelectron spectroscopy, high-resolution electron microscopy, and Rutherford backscattering study. Electrical transport measurements showed the low resistive nature of ALD grown 2D-TiS₂ (1T-phase). Postdeposition annealing of the TiS₃ layers at 400 °C in a sulfur-rich atmosphere improved the crystallinity of the film and yielded photoluminescence at ∼0.9 eV, indicating the semiconducting (direct band gap) nature of TiS₃. The current study opens up a new ALD-based synthesis route for controlled, scalable growth of transition-metal di- and tri-chalcogenides at low temperatures.

Semimetal or Semiconductor: The Nature of High Intrinsic Electrical Conductivity in TiS2

As an intensively studied electrode material for secondary batteries, TiS₂ is known to exhibit high electrical conductivity without extrinsic doping. However, the origin of this high conductivity, either being a semimetal or a heavily self-doped semiconductor, has been debated for several decades. Here, combining quasi-particle GW calculations, density functional theory (DFT) study on intrinsic defects, and scanning tunneling microscopy/spectroscopy (STM/STS) measurements, we conclude that stoichiometric TiS₂ is a semiconductor with an indirect band gap of about 0.5 eV. The high conductivity of TiS₂ is therefore caused by heavy self-doping. Our DFT results suggest that the dominant donor defect that is responsible for the self-doping under thermal equilibrium is Ti interstitial, which is corroborated by our STM/STS measurements.

Tracking the Chemical and Structural Evolution of the TiS2 Electrode in the Lithium-Ion Cell Using Operando X-ray Absorption Spectroscopy

As the lightest and cheapest transition metal dichalcogenide, TiS₂ possesses great potential as an electrode material for lithium batteries due to the advantages of high energy density storage capability, fast ion diffusion rate, and low volume expansion. Despite the extensive investigation of its electrochemical properties, the fundamental discharge-charge reaction mechanism of the TiS₂ electrode is still elusive. Here, by a combination of ex situ and operando X-ray absorption spectroscopy with density functional theory calculations, we have clearly elucidated the evolution of the structural and chemical properties of TiS₂ during the discharge-charge processes. The lithium intercalation reaction is highly reversible and both Ti and sulfur are involved in the redox reaction during the discharge and charge processes. In contrast, the conversion reaction of TiS₂ is partially reversible in the first cycle. However, Ti-O related compounds are developed during electrochemical cycling over extended cycles, which results in the decrease of the conversion reaction reversibility and the rapid capacity fading. In addition, the solid electrolyte interphase formed on the electrode surface is found to be highly dynamic in the initial cycles and then gradually becomes more stable upon further cycling. Such understanding is important for the future design and optimization of TiS₂ based electrodes for lithium batteries.

Density Functional Theory Evaluated for Structural and Electronic Properties of 1T-Li x TiS2 and Lithium Ion Migration in 1T-Li0.94TiS2

In many applications it has been found that the standard generalized gradient approximation (GGA) does not accurately describe weak chemical bond and electronic properties of solids containing transition metals. In this work, we have considered the intercalation material 1T-Li x TiS2 (0≤x≤1) as a model system for the evaluation of the accuracy of GGA and corrected GGA with reference to the availabile experimental data. The influence of two different dispersion corrections (D3 and D-TS) and an on-site Coulomb repulsion term (GGA+U) on the calculated structural and electronic properties is tested. All calculations are based on the Perdew-Burke-Ernzerhof (PBE) functional. An effective U value of 3.5 eV is used for titanium. The deviation of the calculated lattice parameter c for TiS2 from experiment is reduced from 14 % with standard PBE to −2 % with PBE+U and Grimme’s D3 dispersion correction. 1T-TiS2 has a metallic ground state at PBE level whereas PBE+U predicts an indirect gap of 0.19 eV in agreement with experiment. The 7Li chemical shift and quadrupole coupling constants are in reasonable agreement with the experimental data only for PBE+U-D3. An activation energy of 0.4 eV is calculated with PBE+U-D3 for lithium migration via a tetrahedral interstitial site. This result is closer to experimental values than the migration barriers previously obtained at LDA level. The proposed method PBE+U-D3 gives a reasonable description of structural and electronic properties of 1T-Li x TiS2 in the whole range 0≤x≤1.

First-principles study on thermodynamic properties and phase transitions in TiS(2)

Structural and vibrational properties of TiS(2) with the CdI(2) structure have been studied to high pressures from density functional calculations with the local density approximation (LDA). The calculated axial compressibility of the CdI(2)-type phase agrees well with experimental data and is typical of layered transition-metal dichalcogenides. The obtained phonon dispersions show a good correspondence with available experiments. A phonon anomaly is revealed at 0 GPa, but is much reduced at 20 GPa. The thermodynamic properties of this phase were also calculated at high pressures and high temperatures using the quasi-harmonic approximation. Our LDA study on the pressure-induced phase transition sequence predicts that the CdI(2)-type TiS(2), the phase stable at ambient conditions, should transform to the cotunnite phase at 15.1 GPa, then to a tetragonal phase (I4/mmm) at 45.0 GPa. The tetragonal phase remains stable to at least 500 GPa. The existence of the tetragonal phase at high pressures is consistent with our previous findings in NiS(2) (Yu and Ross 2010 J. Phys.: Condens. Matter 22 235401). The cotunnite phase, although only stable in a narrow pressure range between 15.1 and 45.0 GPa, displays the formation of a compact S network between 100 and 200 GPa, which is evidenced by a kink in the variation of unit cell lengths with pressure. The electron density analysis in cotunnite shows that valence electrons are delocalized from Ti atoms and concentrated near the S network.

A high pressure x-ray diffraction study of titanium disulfide

A high pressure angle dispersive synchrotron x-ray diffraction study of titanium disulfide (TiS(2)) was carried out to pressures of 45.5 GPa in a diamond-anvil cell. We observed a phase transformation of TiS(2) beginning at about 20.7 GPa. The structure of the high pressure phase needs further identification. By fitting the pressure-volume data to the third-order Birch-Murnaghan equation of state, the bulk modulus, K(0T), was determined to be 45.9 ± 0.7 GPa with its pressure derivative, K'(0T), being 9.5 ± 0.3 at pressures lower than 17.8 GPa. It was found that the compression behavior of TiS(2) is anisotropic along the different axes. The compression ratio of the c-axis is about nine times larger than the a-axis when pressures are lower than 1 GPa. It suddenly decreases to three times larger at pressures of about 3 GPa. This ratio shows a linear decrease with a slope of negative 0.048 at pressures below phase transformation.