Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial La0.67Sr0.33MnO3 tunnel junctions

Manipulation of Spin-Orbit Torque in Tungsten Oxide/Manganite Heterostructure by Ionic Liquid Gating and Orbit Engineering

Spin-orbit coupling (SOC) is the interaction between electron's spin and orbital motion, which could realize a charge-to-spin current conversion and enable an innovative method to switch the magnetization by spin-orbit torque (SOT). Varied techniques have been developed to manipulate and improve the SOT, but the role of the orbit degree of freedom, which should have a crucial bearing on the SOC and SOT, is still confusing. Here, we find that the charge-to-spin current conversion and SOT in W3O8-δ/(La, Sr)MnO3 could be produced or eliminated by ionic liquid gating. Through tuning the preferential occupancy of Mn/W-d electrons from the in-plane (dx2-y2) to out-of-plane (d3z2-r2) orbit, the SOT damping-like field efficiency is nearly doubled due to the enhanced spin Hall effect and interfacial Rashba-Edelstein effect. These findings not only offer intriguing opportunities to control the SOT for high-efficient spintronic devices but also could be a fundamental step toward spin-orbitronics in the future.

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures. However, there is a lack of commercial sensors for measurements of high magnetic fields, from ∼1 T up to megagauss. Therefore, the search for advanced materials and the engineering of nanostructures exhibiting extraordinary properties or new phenomena for high magnetic field sensing applications is of great importance. The main focus of this review is the investigation of thin films, nanostructures and two-dimensional (2D) materials exhibiting non-saturating magnetoresistance up to high magnetic fields. Results of the review showed how tuning of the nanostructure and chemical composition of thin polycrystalline ferromagnetic oxide films (manganites) can result in a remarkable colossal magnetoresistance up to megagauss. Moreover, by introducing some structural disorder in different classes of materials, such as non-stoichiometric silver chalcogenides, narrow band gap semiconductors, and 2D materials such as graphene and transition metal dichalcogenides, the possibility to increase the linear magnetoresistive response range up to very strong magnetic fields (50 T and more) and over a large range of temperatures was demonstrated. Approaches for the tailoring of the magnetoresistive properties of these materials and nanostructures for high magnetic field sensor applications were discussed and future perspectives were outlined.

Enhancement of Room-Temperature Low-Field Magnetoresistance in Nanostructured Lanthanum Manganite Films for Magnetic Sensor Applications

The results of colossal magnetoresistance (CMR) properties of La1-xSrxMnyO3 (LSMO) films grown by the pulsed injection MOCVD technique onto an Al2O3 substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal−insulator transition typical for manganites at a certain temperature, Tm. The Tm vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the Tm value obtained. The highest Tm values (270 K) were observed for nanostructured LSMO films with x = 0.17−0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm3), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.

Interfacial reconstruction in La0.7Sr0.3MnO3 thin films: giant low-field magnetoresistance

Herein, interfacial reconstruction in a series of La_0.7Sr_0.3MnO₃ (LSMO) films grown on a (001) oriented LaAlO₃ (LAO) substrate using the pulsed plasma sputtering technique is demonstrated. X-ray diffraction studies suggested that the LSMO film on LAO was stabilized in a tetragonal structure, which was relaxed in-plane and strained along the out-of-plane direction. The interfacial reconstruction of the LSMO-LAO interface due to the reorientation of the Mn ion spin induced spin-glass behavior due to the presence of non-collinear Mn ion spins. Consequently, the interface effect was observed on the Curie temperature, temperature-dependent resistivity, metal-to-semiconductor transition temperature, and magnetoresistance (MR). At a magnetic field of 7 T, MR decreased from 99.8% to 7.69% as the LSMO film thickness increased from 200 Å to 500 Å. A unique characteristic of the LSMO films is the large low-field MR after a decrease in the field from the maximum field. The observed temperature-dependent magnetization and low-temperature resistivity upturn of the LSMO films grown on LAO provide direct evidence that the low-field MR is due to the non-collinear interfacial spins of Mn. The present work demonstrates the great potential of interface and large low-field MR, which might advance the fundamental applications of orbital physics and spintronics.

Research Progress in Rare Earth-Doped Perovskite Manganite Oxide Nanostructures

Perovskite manganites exhibit a broad range of structural, electronic, and magnetic properties, which are widely investigated since the discovery of the colossal magnetoresistance effect in 1994. As compared to the parent perovskite manganite oxides, rare earth-doped perovskite manganite oxides with a chemical composition of LnxA1-xMnO3 (where Ln represents rare earth metal elements such as La, Pr, Nd, A is divalent alkaline earth metal elements such as Ca, Sr, Ba) exhibit much diverse electrical properties due to that the rare earth doping leads to a change of valence states of manganese which plays a core role in the transport properties. There is not only the technological importance but also the need to understand the fundamental mechanisms behind the unusual magnetic and transport properties that attract enormous attention. Nowadays, with the rapid development of electronic devices toward integration and miniaturization, the feature sizes of the microelectronic devices based on rare earth-doped perovskite manganite are down-scaled into nanoscale dimensions. At nanoscale, various finite size effects in rare earth-doped perovskite manganite oxide nanostructures will lead to more interesting novel properties of this system. In recent years, much progress has been achieved on the rare earth-doped perovskite manganite oxide nanostructures after considerable experimental and theoretical efforts. This paper gives an overview of the state of art in the studies on the fabrication, structural characterization, physical properties, and functional applications of rare earth-doped perovskite manganite oxide nanostructures. Our review first starts with the short introduction of the research histories and the remarkable discoveries in the rare earth-doped perovskite manganites. In the second part, different methods for fabricating rare earth-doped perovskite manganite oxide nanostructures are summarized. Next, structural characterization and multifunctional properties of the rare earth-doped perovskite manganite oxide nanostructures are in-depth reviewed. In the following, potential applications of rare earth-doped perovskite manganite oxide nanostructures in the fields of magnetic memory devices and magnetic sensors, spintronic devices, solid oxide fuel cells, magnetic refrigeration, biomedicine, and catalysts are highlighted. Finally, this review concludes with some perspectives and challenges for the future researches of rare earth-doped perovskite manganite oxide nanostructures.

Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures

Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlated oxide materials as a comparison that also has some implications for understanding the origin of MIT.

Epitaxial growth and magnetic/transport properties of La0.7Sr0.3MnO3 thin films grown on SrTiO3 with optimized growth conditions

Epitaxial growth of colossal magnetoresistive thin films of La_0.7Sr_0.3MnO₃ (LSMO) has been achieved on TiO₂-terminated (001) SrTiO₃ (STO) single-crystal substrates using PLD (pulsed laser deposition).

One-Dimensional Perovskite Manganite Oxide Nanostructures: Recent Developments in Synthesis, Characterization, Transport Properties, and Applications

One-dimensional nanostructures, including nanowires, nanorods, nanotubes, nanofibers, and nanobelts, have promising applications in mesoscopic physics and nanoscale devices. In contrast to other nanostructures, one-dimensional nanostructures can provide unique advantages in investigating the size and dimensionality dependence of the materials' physical properties, such as electrical, thermal, and mechanical performances, and in constructing nanoscale electronic and optoelectronic devices. Among the one-dimensional nanostructures, one-dimensional perovskite manganite nanostructures have been received much attention due to their unusual electron transport and magnetic properties, which are indispensable for the applications in microelectronic, magnetic, and spintronic devices. In the past two decades, much effort has been made to synthesize and characterize one-dimensional perovskite manganite nanostructures in the forms of nanorods, nanowires, nanotubes, and nanobelts. Various physical and chemical deposition techniques and growth mechanisms are explored and developed to control the morphology, identical shape, uniform size, crystalline structure, defects, and homogenous stoichiometry of the one-dimensional perovskite manganite nanostructures. This article provides a comprehensive review of the state-of-the-art research activities that focus on the rational synthesis, structural characterization, fundamental properties, and unique applications of one-dimensional perovskite manganite nanostructures in nanotechnology. It begins with the rational synthesis of one-dimensional perovskite manganite nanostructures and then summarizes their structural characterizations. Fundamental physical properties of one-dimensional perovskite manganite nanostructures are also highlighted, and a range of unique applications in information storages, field-effect transistors, and spintronic devices are discussed. Finally, we conclude this review with some perspectives/outlook and future researches in these fields.

Long Spin Diffusion Length in Few-Layer Graphene Flakes

We report a spin valve with a few-layer graphene flake bridging highly spin-polarized La_{0.67}Sr_{0.33}MnO_{3} electrodes, whose surfaces are kept clean during lithographic definition. Sharp magnetic switching is verified using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. A naturally occurring high interfacial resistance ∼12  MΩ facilitates spin injection, and a large resistive switching (0.8  MΩ at 10 K) implies a 70-130  μm spin diffusion length that exceeds previous values obtained with sharp-switching electrodes.

Enhancement of Low-field Magnetoresistance in Self-Assembled Epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O4 Composite Films via Polymer-Assisted Deposition

Polymer-assisted deposition method has been used to fabricate self-assembled epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O4 films on LaAlO3 substrates. Compared to pulsed-laser deposition method, polymer-assisted deposition provides a simpler and lower-cost approach to self-assembled composite films with enhanced low-field magnetoresistance effect. After the addition of NiO or Co3O4, triangular NiO and tetrahedral Co3O4 nanoparticles remain on the surface of La0.67Ca0.33MnO3 films. This results in a dramatic increase in resistivity of the films from 0.0061 Ω•cm to 0.59 Ω•cm and 1.07 Ω•cm, and a decrease in metal-insulator transition temperature from 270 K to 180 K and 172 K by the addition of 10%-NiO and 10%-Co3O4, respectively. Accordingly, the maximum absolute magnetoresistance value is improved from -44.6% to -59.1% and -52.7% by the addition of 10%-NiO and 10%-Co3O4, respectively. The enhanced low-field magnetoresistance property is ascribed to the introduced insulating phase at the grain boundaries. The magnetism is found to be more suppressed for the La0.67Ca0.33MnO3:Co3O4 composite films than the La0.67Ca0.33MnO3:NiO films, which can be attributed to the antiferromagnetic properties of the Co3O4 phase. The solution-processed composite films show enhanced low-field magnetoresistance effect which are crucial in practical applications. We expect our polymer-assisted deposited films paving the pathway in the field of hole-doped perovskites with their intrinsic colossal magnetoresistance.

Tuning magnetoresistive and magnetocaloric properties via grain boundaries engineering in granular manganites

The effect of interface size on the relative cooling power and magnetoresistive properties of La_0.7Ba_0.3MnO₃ compounds is investigated.

Perpendicular Exchange-Biased Magnetotransport at the Vertical Heterointerfaces in La(0.7)Sr(0.3)MnO3:NiO Nanocomposites

Heterointerfaces in manganite-based heterostructures in either layered or vertical geometry control their magnetotransport properties. Instead of using spin-polarized tunneling across the interface, a unique approach based on the magnetic exchange coupling along the vertical interface to control the magnetotransport properties has been demonstrated. By coupling ferromagnetic La0.7Sr0.3MnO3 and antiferromagnetic NiO in an epitaxial vertically aligned nanocomposite (VAN) architecture, a dynamic and reversible switch of the resistivity between two distinct exchange biased states has been achieved. This study explores the use of vertical interfacial exchange coupling to tailor magnetotransport properties, and demonstrates their viability for spintronic applications.

Epitaxial growth of highly-crystalline spinel ferrite thin films on perovskite substrates for all-oxide devices

The potential growth modes for epitaxial growth of Fe₃O₄ on SrTiO₃ (001) are investigated through control of the energetics of the pulsed-laser deposition growth process (via substrate temperature and laser fluence). We find that Fe₃O₄ grows epitaxially in three distinct growth modes: 2D-like, island, and 3D-to-2D, the last of which is characterized by films that begin growth in an island growth mode before progressing to a 2D growth mode. Films grown in the 2D-like and 3D-to-2D growth modes are atomically flat and partially strained, while films grown in the island growth mode are terminated in islands and fully relaxed. We find that the optimal structural, transport, and magnetic properties are obtained for films grown on the 2D-like/3D-to-2D growth regime boundary. The viability for including such thin films in perovskite-based all-oxide devices is demonstrated by growing a Fe₃O₄/La_0.7Sr_0.3MnO₃ spin valve epitaxially on SrTiO₃.

Minority-spin t(2g) states and the degree of spin polarization in ferromagnetic metallic La(2-2x)Sr(1+2x)Mn(2)O(7) (x = 0.38)

A half-metal is a material with conductive electrons of one spin orientation. This type of substance has been extensively searched for due to the fascinating physics as well as the potential applications for spintronics. Ferromagnetic manganites are considered to be good candidates, though there is no conclusive evidence for this notion. Here we show that the ferromagnet La_2−2xSr_1+2xMn₂O₇ (x = 0.38) possesses minority-spin states, challenging whether any of the manganites may be true half-metals. However, when electron transport properties are taken into account on the basis of the electronic band structure, we found that the La_2−2xSr_1+2xMn₂O₇ (x = 0.38) can essentially behave like a complete half metal.

Oxide nanowires for spintronics: materials and devices

Spintronics, or spin-based data storage and manipulation technology, is emerging as a very active research area because of both new science and potential technological applications. As the characteristic lengths of spin-related phenomena naturally fall into the nanometre regime, researchers start applying the techniques of bottom-up nanomaterial synthesis and assembly to spintronics. It is envisaged that novel physics regarding spin manipulation and domain dynamics can be realized in quantum confined nanowire-based devices. Here we review the recent breakthroughs related to the applications of oxide nanowires in spintronics from the perspectives of both material candidates and device fabrication. Oxide nanowires generally show excellent crystalline quality and tunable physical properties, but more efforts are imperative as we strive to develop novel spintronic nanowires and devices.

Exchange coupling and exchange bias in La0.7Sr0.3MnO3-SrRuO3 superlattices

La(0.7)Sr(0.3)MnO(3)-SrRuO(3) superlattices with and without nanometrically thin SrTiO(3), BaTiO(3) and Ba(0.7)Sr(0.3)TiO(3) interlayers were grown by pulsed laser deposition. Transmission electron microscopy studies showed coherent growth of La(0.7)Sr(0.3)MnO(3), SrRuO(3) and SrTiO(3) layers with atomically sharp interfaces, even if individual layers were as thin as one or two unit cells. In contrast, misfit dislocations and unit cell high interfacial steps were observed at the interfaces between BaTiO(3) and one of the ferromagnetic layers. The presence of the interlayers as well as these extended defects had a significant influence on the magnetic properties of the superlattices, especially on the antiferromagnetic interlayer exchange coupling between the La(0.7)Sr(0.3)MnO(3) and SrRuO(3) layers and the exchange biasing. Surprisingly, exchange biasing was found to increase with decreasing strength of the antiferromagnetic interlayer exchange coupling. This was explained by different magnetization reversal mechanisms acting in the regimes of strong and weak interlayer exchange coupling.

Size Effects on Polarization in Epitaxial Ferroelectric Films and the Concept of Ferroelectric Tunnel Junctions Including First Results

Extrinsic and intrinsic size effects on the spontaneous polarization of epitaxial ferroelectric films are discussed. The extrinsic effect of electrostatic origin is attributed to the presence of nonferroelectric subsurface layers in the film. Theoretical studies of this depolarizing-field effect are reviewed. It is concluded that, for perovskite ferroelectrics sandwiched between electrodes with a perovskite structure, the depolarizing-field effect on the static properties should be negligible. The extrinsic size effect is also attributed to the thickness dependence of the film in-plane lattice strain Sm, which is due to the generation of misfit dislocations in the epitaxy. Variation of the film polarization with the misfit strain Sm is described by a nonlinear thermodynamic theory, which allows for the mechanical film/substrate interaction. The intrinsic effect of the film surfaces, which is associated with spatial correlations of the ferroelectric polarization, is simultaneously taken into account via the concept of extrapolation length δ. It is shown that, in films grown on compressive substrates (Sm < 0), the strain-induced increase of the mean polarization prevails over the negative intrinsic size effect (δ > 0). As a result, well below the transition temperature, ferroelectricity may be present even in nanometer-thick epitaxial layers. Motivated by this result, we propose the concept of ferroelectric tunnel junction. First results on tunnelling through ultrathin barriers of perovskite ferroelectrics are presented.

Hidden magnetic configuration in epitaxial La(1-x) Sr(x) MnO3 films

We present an unreported magnetic configuration in epitaxial La(1-x) Sr(x) MnO3 (x ∼ 0.3) (LSMO) films grown on strontium titanate (STO). X-ray magnetic circular dichroism indicates that the remanent magnetic state of thick LSMO films is opposite to the direction of the applied magnetic field. Spectroscopic and scattering measurements reveal that the average Mn valence varies from mixed Mn(3+)/Mn(4+) to an enriched Mn3+ region near the STO interface, resulting in a compressive lattice along the a, b axis and a possible electronic reconstruction in the Mn e(g) orbital (d(3)z(2)-r(2). This reconstruction may provide a mechanism for coupling the Mn3+ moments antiferromagnetically along the surface normal direction, and in turn may lead to the observed reversed magnetic configuration.

Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi Epilayers grown on Ge(111)

For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2(1)-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x approximately 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75 < or = x < or = 1.5. We discuss the possibility of room-temperature ferromagnetic Fe(3-x)Mn(x)Si/Ge epilayers with high spin polarization.

Electronic effects in manganite/insulator interfaces: interfacial enhancement of the insulating tunneling barriers

The transport properties across perovskite oxides heterointerfaces are analyzed. Epitaxial La(2/3)Ca(1/3)MnO3/SrTiO3 (LCMO/STO) heterostructures with different STO insulating-barrier thicknesses are systematically investigated and their behavior compared with LCMO/metal junctions. Atomic force microscopy (AFM) measurements in current-sensing mode show typical features associated with tunneling conduction. Careful analysis of the I-V curves across LCMO/STO heterointerfaces, using the Simmons model in the intermediate voltage range, clearly shows the existence of an interface-induced enhancement of the tunneling barrier of about 1.6 nm on the LCMO side. These results confirm recent theoretical studies predicting electronic phase segregation and the formation of an orbital-ordered insulating phase at the manganite-insulator interface that is a result of the reduction in the number of charge carriers at the interface.

Nanoscale magnetic structure of ferromagnet/antiferromagnet manganite multilayers

We use polarized neutron reflectometry and dc magnetometry to obtain a comprehensive picture of the magnetic structure of a series of La(2/3)Sr(1/3)MnO3/Pr(2/3)Ca(1/3)MnO3 (LSMO/PCMO) superlattices, with varying thickness of the antiferromagnetic (AFM) PCMO layers (0<or=tA<or=7.6 nm). While LSMO presents a few magnetically frustrated monolayers at the interfaces with PCMO, in the latter a magnetic contribution due to ferromagnetic (FM) inclusions within the AFM matrix is maximized at tA approximately 3 nm. This enhancement of FM moment occurs at the matching between layer thickness and cluster size, implying the possibility of tuning phase separation by imposing appropriate geometrical constraints which favor the accommodation of FM nanoclusters within the "non-FM" material.

The case against half-metallicity in La(0.7)Sr(0.3)MnO(3)

Half-metallic ferromagnets are universally believed to be of great importance for a multitude of spintronic applications, including non-volatile logic and memory, spin transistors and many other recently proposed devices. While many materials have been predicted to be half-metallic, experimental confirmation of this exciting effect is still very controversial, particularly for optimally doped La(0.7)Sr(0.3)MnO(3) (LSMO). In this paper we will review some of the techniques used for spin polarization measurements and, in particular, the results obtained for LSMO. It was argued in Nadgorny et al (2001 Phys. Rev. B 63 184433) that LSMO is a transport half-metal, rather than a conventional half-metal with no minority electrons at the Fermi level at T = 0 K. We will discuss some of the more recent measurements in LSMO and see how well this conclusion stacks up against these new results.

Negative spin polarization of Fe3O4 in magnetite/manganite-based junctions

Epitaxial oxide trilayer junctions composed of magnetite (Fe3O4) and doped manganite (La0.7Sr0.3MnO3) exhibit inverse magnetoresistance as large as -25% in fields of 4 kOe. The inverse magnetoresistance confirms the theoretically predicted negative spin polarization of Fe3O4. Transport through the barrier can be understood in terms of hopping transport through localized states that preserve electron spin information. The junction magnetoresistance versus temperature curve exhibits a peak around 60 K that is explained in terms of the paramagnetic to ferrimagnetic transition of the CoCr2O4 barrier.

Magnetoresistance of ferromagnetic tunnel junctions in the double-exchange model

We conduct a theoretical study of the temperature dependence of the spin polarization ( P) and the magnetoresistance (MR) ratio using the double exchange (DE) model for ferromagnetic tunnel junctions with half-metallic systems. It is shown that the strong exchange coupling in the DE model plays an important role in the temperature dependence of both P and the MR ratio; their values can be less than the maximum values expected for half-metallic systems at low temperatures, and the MR ratio decreases more rapidly than P with increasing temperature. The calculated results, however, indicate that the MR ratio may still be large at high temperatures near the Curie temperature.

SPIN-DEPENDENT TRANSPORT AND LOW-FIELD MAGNETORESISTANCE IN DOPED MANGANITES

▪ Abstract  Doped manganite perovskites exhibit large magnetoresistance, but usually only in high fields (>1 Tesla). Efforts are under way to understand the underlying mechanism and to explore possibilities of achieving large magnetoresistance at low fields, which has led to focused studies of spin-dependent transport across macroscopic interfaces between manganites. We review recent experimental progress in this area.