Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn3Si2Te6 Nanoflakes

As a quasi-layered ferrimagnetic material, Mn3Si2Te6 nanoflakes exhibit magnetoresistance behavior that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. First, at least 106 times faster response compared to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Second, ultralow current density is required for resistance modulation (∼5 A/cm2). Third, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behavior in the Mn3Si2Te6 nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultrafast process (∼nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn3Si2Te6 nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation, and spin torque.

Colossal Magnetoresistance in Layered Diluted Magnetic Semiconductor Rb(Zn,Li,Mn)4As3 Single Crystals

Diluted magnetic semiconductors (DMSs) with tunable ferromagnetism are among the most promising materials for fabricating spintronic devices. Some DMS systems have sizeable magnetoresistances that can further extend their applications. Here, we report a new DMS Rb(Zn1-x-yLiyMnx)4As3 with a quasi-two-dimensional structure showing sizeable anisotropies in its ferromagnetism and transverse magnetoresistance (MR). With proper charge and spin doping, single crystals of the DMS display Curie temperatures up to 24 K. Analysis of the critical behavior via Arrott plots confirms the long-range ferromagnetic ordering in the Rb(Zn1-x-yLiyMnx)4As3 single crystals. We observed remarkable intrinsic MR effects in the single crystals (i.e., a positive MR of 85% at 0.4 T and a colossal negative MR of -93% at 7 T).

Investigation of magnetic properties and colossal magnetoresistance in nanocrystalline doped manganite

Here in, we report structural, magnetic, and magneto-transport properties of nanocrystalline La0.6Ag0.2Bi0.2MnO3prepared using citrate sol-gel method. By using scanning and transmission electron microscopy measurements, the morphology and particle size of the sample have been confirmed. The Mn2p x-ray photoelectron spectroscopy spectra revealed the nanoparticles contained the coexistence of Mn3+and Mn4+ions with Mn3+/Mn4+ratio of 2:1. Field-cooled and zero field-cooled magnetization protocols with temperature span of 5 K-300 K, confirm the paramagnetic (PM) to ferromagnetic (FM) phase transition at critical temperature,TC∼ 146 K. The complete investigation of isothermal magnetization (130⩽T (K)⩽160,ΔT=2 K), Arrott plots, and magnetocaloric effect as well as quantitative analysis of second-order phase transition has been studied. The criticality at the PM-FM transition was examined for the sample, and the obtained critical exponents were verified for their reliability through the utilization of the scaling hypothesis and Kouvel-Fisher plot. We observed a large magnetic entropy change (∼7 J-Kg-1K-1) atTCupon 5 T magnetic field strength. The renormalized magnetic entropy change plots are found to collapse onto a single curve, thus verifying the universality of the sample. Above the metal-insulator transitions the electrical resistivity shows a small polaron hopping conduction mechanism, however, at low temperatures scattering mechanism dominates and the whole range was explained by the universal percolation model. The colossal value of negative MR is found to be 88% at 168 K under an applied field strength of 2 T. As a result of our experimental data, we can grasp the intuitive understanding of magnetic as well as transport properties in Bi-doped manganite systems potential for magnetic sensors and spintronics applications.

Magnetoresistance and Magnetic Relaxation of La-Sr-Mn-O Films Grown on Si/SiO2 Substrate by Pulsed Injection MOCVD

The results of magnetoresistance (MR) and resistance relaxation of nanostructured La_1-xSr_xMn_yO₃ (LSMO) films with different film thicknesses (60-480 nm) grown on Si/SiO₂ substrate by the pulsed-injection MOCVD technique are presented and compared with the reference manganite LSMO/Al₂O₃ films of the same thickness. The MR was investigated in permanent (up to 0.7 T) and pulsed (up to 10 T) magnetic fields in the temperature range of 80-300 K, and the resistance-relaxation processes were studied after the switch-off of the magnetic pulse with an amplitude of 10 T and a duration of 200 μs. It was found that the high-field MR values were comparable for all investigated films (~-40% at 10 T), whereas the memory effects differed depending on the film thickness and substrate used for the deposition. It was demonstrated that resistance relaxation to the initial state after removal of the magnetic field occurred in two time scales: fast' (~300 μs) and slow (longer than 10 ms). The observed fast relaxation process was analyzed using the Kolmogorov-Avrami-Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. The smallest remnant resistivity values were found for the LSMO films grown on SiO₂/Si substrate in comparison to the LSMO/Al₂O₃ films. The testing of the LSMO/SiO₂/Si-based magnetic sensors in an alternating magnetic field with a half-period of 22 μs demonstrated that these films could be used for the development of fast magnetic sensors operating at room temperature. For operation at cryogenic temperature, the LSMO/SiO₂/Si films could be employed only for single-pulse measurements due to magnetic-memory effects.

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures. However, there is a lack of commercial sensors for measurements of high magnetic fields, from ∼1 T up to megagauss. Therefore, the search for advanced materials and the engineering of nanostructures exhibiting extraordinary properties or new phenomena for high magnetic field sensing applications is of great importance. The main focus of this review is the investigation of thin films, nanostructures and two-dimensional (2D) materials exhibiting non-saturating magnetoresistance up to high magnetic fields. Results of the review showed how tuning of the nanostructure and chemical composition of thin polycrystalline ferromagnetic oxide films (manganites) can result in a remarkable colossal magnetoresistance up to megagauss. Moreover, by introducing some structural disorder in different classes of materials, such as non-stoichiometric silver chalcogenides, narrow band gap semiconductors, and 2D materials such as graphene and transition metal dichalcogenides, the possibility to increase the linear magnetoresistive response range up to very strong magnetic fields (50 T and more) and over a large range of temperatures was demonstrated. Approaches for the tailoring of the magnetoresistive properties of these materials and nanostructures for high magnetic field sensor applications were discussed and future perspectives were outlined.

Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response

Colossal magnetoresistance is of great fundamental and technological significance in condensed-matter physics, magnetic memory, and sensing technologies. However, its relatively narrow working temperature window is still a severe obstacle for potential applications due to the nature of the material-inherent phase transition. Here, we realized hierarchical La_0.7Sr_0.3MnO₃ thin films with well-defined (001) and (221) crystallographic orientations by combining substrate modification with conventional thin-film deposition. Microscopic investigations into its magnetic transition through electron holography reveal that the hierarchical microstructure significantly broadens the temperature range of the ferromagnetic-paramagnetic transition, which further widens the response temperature range of the macroscopic colossal magnetoresistance under the scheme of the double-exchange mechanism. Therefore, this work puts forward a method to alter the magnetic transition and thus to extend the magnetoresistance working window by nanoengineering, which might be a promising approach also for other phase-transition-related effects in functional oxides.

Measurement System for Short-Pulsed Magnetic Fields

A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganite film with minimized memory effect, and a magnetic field recording module. The memory effect of the La_1-xSr_x(Mn_1-yCo_y)_zO₃ manganite films doped with different amounts of Co and Mn was investigated by measuring the magnetoresistance (MR) and resistance relaxation in pulsed magnetic fields up to 20 T in the temperature range of 80-365 K. It was found that for low-temperature applications, films doped with Co (LSMCO) are preferable due to the minimized magnetic memory effect at these temperatures, compared with LSMO films without Co. For applications at temperatures higher than room temperature, nanostructured manganite LSMO films with increased Mn content above the stoichiometric level have to be used. These films do not exhibit magnetic memory effects and have higher MR values. To avoid parasitic signal due to electromotive forces appearing in the transmission line of the sensor during measurement of short-pulsed magnetic fields, a bipolar-pulsed voltage supply for the sensor was used. For signal recording, a measurement module consisting of a pulsed voltage generator with a frequency up to 12.5 MHz, a 16-bit ADC with a sampling rate of 25 MHz, and a microprocessor was proposed. The circuit of the measurement module was shielded against low- and high-frequency electromagnetic noise, and the recorded signal was transmitted to a personal computer using a fiber optic link. The system was tested using magnetic field generators, generating magnetic fields with pulse durations ranging from 3 to 20 μs. The developed magnetic field measurement system can be used for the measurement of high-pulsed magnetic fields with pulse durations in the order of microseconds in different fields of science and industry.

High Entropy Approach to Engineer Strongly Correlated Functionalities in Manganites

Technologically relevant strongly correlated phenomena such as colossal magnetoresistance (CMR) and metal-insulator transitions (MIT) exhibited by perovskite manganites are driven and enhanced by the coexistence of multiple competing magneto-electronic phases. Such magneto-electronic inhomogeneity is governed by the intrinsic lattice-charge-spin-orbital correlations, which, in turn, are conventionally tailored in manganites via chemical substitution, charge doping, or strain engineering. Alternately, the recently discovered high entropy oxides (HEOs), owing to the presence of multiple-principal cations on a given sub-lattice, exhibit indications of an inherent magneto-electronic phase separation encapsulated in a single crystallographic phase. Here, the high entropy (HE) concept is combined with standard property control by hole doping in a series of single-phase orthorhombic HE-manganites (HE-Mn), (Gd_0.25 La_0.25 Nd_0.25 Sm_0.25 )_{1- x} Sr_x MnO₃ (x = 0-0.5). High-resolution transmission microscopy reveals hitherto-unknown lattice imperfections in HEOs: twins, stacking faults, and missing planes. Magnetometry and electrical measurements infer three distinct ground states-insulating antiferromagnetic, unpercolated metallic ferromagnetic, and long-range metallic ferromagnetic-coexisting or/and competing as a result of hole doping and multi-cation complexity. Consequently, CMR ≈1550% stemming from an MIT is observed in polycrystalline pellets, matching the best-known values for bulk conventional manganites. Hence, this initial case study highlights the potential for a synergetic development of strongly correlated oxides offered by the high entropy design approach.

Enhancement of Room-Temperature Low-Field Magnetoresistance in Nanostructured Lanthanum Manganite Films for Magnetic Sensor Applications

The results of colossal magnetoresistance (CMR) properties of La1-xSrxMnyO3 (LSMO) films grown by the pulsed injection MOCVD technique onto an Al2O3 substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal−insulator transition typical for manganites at a certain temperature, Tm. The Tm vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the Tm value obtained. The highest Tm values (270 K) were observed for nanostructured LSMO films with x = 0.17−0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm3), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.

Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications

The results of colossal magnetoresistance (CMR) properties of La_0.83Sr_0.17Mn_1.21O₃ (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al₂O₃, and amorphous Si/SiO₂ substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

Colossal Magnetoresistance in Ti Lightly Doped Cr2Se3 Single Crystals with a Layered Structure

Stoichiometric Cr₂Se₃ single crystals are particular layer-structured antiferromagnets, which possess a noncollinear spin configuration, weak ferromagnetic moments, moderate magnetoresistance (MR ∼14.3%), and poor metallic conductivity below the antiferromagnetic phase transition. Here, we report an interesting >16 000% colossal magnetoresistance (CMR) effect in Ti (1.5 atomic percent) lightly doped Cr₂Se₃ single crystals. Such a CMR is approximately 1143 times larger than that of the stoichiometric Cr₂Se₃ crystals and is rarely observed in layered antiferromagnets and is attributed to the frustrated spin configuration. Moreover, the Ti doping not only dramatically changes the electronic conductivity of the Cr₂Se₃ crystal from a bad metal to a semiconductor with a gap of ∼15 meV but also induces a change in the magnetic anisotropy of the Cr₂Se₃ crystal from strong out-of-plane to weak in-plane. Further, magnetotransport measurements reveal that the low-field MR scales with the square of the reduced magnetization, which is a signature of CMR materials. The layered Ti:Cr₂Se₃ with the CMR effect could be used as two-dimensional (2D) heterostructure building blocks to provide colossal negative MR in spintronic devices.

Influence of Thickness on the Magnetic and Magnetotransport Properties of Epitaxial La0.7Sr0.3MnO3 Films Deposited on STO (0 0 1)

Epitaxial La0.7Sr0.3MnO3 films with different thicknesses (9-90 nm) were deposited on SrTiO3 (0 0 1) substrates by pulsed laser deposition. The films have been investigated with respect to morpho-structural, magnetic, and magneto-transport properties, which have been proven to be thickness dependent. Magnetic contributions with different switching mechanisms were evidenced, depending on the perovskite film thickness. The Curie temperature increases with the film thickness. In addition, colossal magnetoresistance effects of up to 29% above room temperature were evidenced and discussed in respect to the magnetic behavior and film thickness.

Metastable Materials Accessed under Moderate Pressure Conditions (P ≤ 3.5 GPa) in a Piston-Cylinder Press

In this review, we describe different families of metastable materials, some of them with relevant technological applications, which can be stabilized at moderate pressures 2–3.5 GPa in a piston-cylinder press. The synthesis of some of these systems had been previously reported under higher hydrostatic pressures (6–10 GPa), but can be accessed under milder conditions in combination with reactive precursors prepared by soft-chemistry techniques. These systems include perovskites with transition metals in unusual oxidation states (e.g., RNiO₃ with Ni³⁺, R = rare earths); double perovskites such as RCu₃Mn₄O₁₂ with Jahn–Teller Cu²⁺ ions at A sites, pyrochlores derived from Tl₂Mn₂O₇ with colossal magnetoresistance, pnictide skutterudites M_xCo₄Sb₁₂ (M = La, Yb, Ce, Sr, K) with thermoelectric properties, or metal hydrides Mg₂MH_x (M = Fe, Co, Ni) and AMgH₃ (A: alkali metals) with applications in hydrogen storage. The availability of substantial amounts of sample (0.5–1.5 g) allows a complete characterization of the properties of interest, including magnetic, transport, thermoelectric properties and so on, and the structural characterization by neutron or synchrotron X-ray diffraction techniques.

Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal

Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their colossal magnetoresistance (CMR). A double exchange interaction underlies the CMR in manganates, whereby charge transport is enhanced when the spins on neighboring Mn³⁺ and Mn⁴⁺ ions are parallel. Prior efforts to find different materials or mechanisms for CMR resulted in a much smaller effect. Here an enormous CMR at low temperatures in EuCd₂ P₂ without manganese, oxygen, mixed valence, or cubic perovskite structure is shown. EuCd₂ P₂ has a layered trigonal lattice and exhibits antiferromagnetic ordering at 11 K. The magnitude of CMR (10⁴ %) in as-grown crystals of EuCd₂ P₂ rivals the magnitude in optimized thin films of manganates. The magnetization, transport, and synchrotron X-ray data suggest that strong magnetic fluctuations are responsible for this phenomenon. The realization of CMR at low temperatures without heterovalency leads to a new regime for materials and technologies related to antiferromagnetic spintronics.

Magnetotransport studies of Fe vacancy-ordered Fe4+δSe5 nanowires

We studied the electrical transport of Fe4+δSe5 single-crystal nanowires exhibiting √5 × √5 Fe-vacancy order and mixed valence of Fe. Fe4+δSe5 compound has been identified as the parent phase of FeSe superconductor. A first-order metal-insulator (MI) transition of transition temperature T MI ∼ 28 K is observed at zero magnetic fields (B). Colossal positive magnetoresistance emerges, resulting from the magnetic field-dependent MI transition. T MI demonstrates anisotropic magnetic field dependence with the preferred orientation along the c axis. At temperature T < ∼17 K, the state of near-magnetic field-independent resistance, which is due to spin polarized even at zero fields, preserves under magnetic fields up to B = 9 T. The Arrhenius law shift of the transition on the source-drain frequency dependence reveals that it is a nonoxide compound with the Verwey-like electronic correlation. The observation of the magnetic field-independent magnetoresistance at low temperature suggests it is in a charge-ordered state below T ∼ 17 K. The results of the field orientation measurements indicate that the spin-orbital coupling is crucial in √5 × √5 Fe vacancy-ordered Fe4+δSe5 at low temperatures. Our findings provide valuable information to better understand the orbital nature and the interplay between the MI transition and superconductivity in FeSe-based materials.

Relation between thickness, crystallite size and magnetoresistance of nanostructured La1- x Sr x Mn y O3±δ films for magnetic field sensors

In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La_{1- x} Sr _x Mn _y O_3±δ (LSMO) films on ceramic Al₂O₃ substrates. The compositional, structural and magnetoresistive properties of the nanostructured manganite were changed by variation of the processing conditions: precursor solution concentration, supply frequency and number of supply sources during the PI-MOCVD growth process. The results showed that the thick (≈400 nm) nanostructured LSMO films, grown using an additional supply source of precursor solution in an exponentially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to use these films for the development of magnetic field sensors operating at room temperature is discussed.

Colossal Terahertz Magnetoresistance at Room Temperature in Epitaxial La0.7Sr0.3MnO3 Nanocomposites and Single-Phase Thin Films

Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La_0.7Sr_0.3MnO₃. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. The VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.

Origin of colossal magnetoresistance in LaMnO3 manganite

Phase separation is a crucial ingredient of the physics of manganites; however, the role of mixed phases in the development of the colossal magnetoresistance (CMR) phenomenon still needs to be clarified. We report the realization of CMR in a single-valent LaMnO3 manganite. We found that the insulator-to-metal transition at 32 GPa is well described using the percolation theory. Pressure induces phase separation, and the CMR takes place at the percolation threshold. A large memory effect is observed together with the CMR, suggesting the presence of magnetic clusters. The phase separation scenario is well reproduced, solving a model Hamiltonian. Our results demonstrate in a clean way that phase separation is at the origin of CMR in LaMnO3.

Room-temperature ferromagnetism in thin films of LaMnO3 deposited by a chemical method over large areas

Hole-doping into the Mott insulator LaMnO3 results in a very rich magneto-electric phase diagram, including colossal magnetoresistance and different types of charge and orbital ordering. On the other hand, LaMnO3 presents an important catalytic activity for oxygen reduction, which is fundamental for increasing the efficiency of solid-oxide fuel cells and other energy-conversion devices. In this work, we report the chemical solution (water-based) synthesis of high-quality epitaxial thin films of LaMnO3, free of defects at square-centimeter scales, and compatible with standard microfabrication techniques. The films show a robust ferromagnetic moment and large magnetoresistance at room temperature. Through a comparison with films grown by pulsed laser deposition, we show that the quasi-equilibrium growth conditions characteristic of this chemical process can be exploited to tune new functionalities of the material.

Magnetic mesocrystal-assisted magnetoresistance in manganite

Mesocrystal, a new class of crystals as compared to conventional and well-known single crystals and polycrystalline systems, has captured significant attention in the past decade. Recent studies have been focused on the advance of synthesis mechanisms as well as the potential on device applications. In order to create further opportunities upon functional mesocrystals, we fabricated a self-assembled nanocomposite composed of magnetic CoFe2O4 mesocrystal in Sr-doped manganites. This combination exhibits intriguing structural and magnetic tunabilities. Furthermore, the antiferromagnetic coupling of the mesocrystal and matrix has induced an additional magnetic perturbation to spin-polarized electrons, resulting in a significantly enhanced magnetoresistance in the nanocomposite. Our work demonstrates a new thought toward the enhancement of intrinsic functionalities assisted by mesocrystals and advanced design of novel mesocrystal-embedded nanocomposites.