Quantum Hall transition in real space: from localized to extended states

Quantum simulator to emulate lower-dimensional molecular structure

Bottom-up quantum simulators have been developed to quantify the role of various interactions, dimensionality, and structure in creating electronic states of matter. Here, we demonstrated a solid-state quantum simulator emulating molecular orbitals, based solely on positioning individual cesium atoms on an indium antimonide surface. Using scanning tunneling microscopy and spectroscopy, combined with ab initio calculations, we showed that artificial atoms could be made from localized states created from patterned cesium rings. These artificial atoms served as building blocks to realize artificial molecular structures with different orbital symmetries. These corresponding molecular orbitals allowed us to simulate two-dimensional structures reminiscent of well-known organic molecules. This platform could further be used to monitor the interplay between atomic structures and the resulting molecular orbital landscape with submolecular precision.

Absence of edge reconstruction for quantum Hall edge channels in graphene devices

Quantum Hall (QH) edge channels propagating along the periphery of two-dimensional (2D) electron gases under perpendicular magnetic field are a major paradigm in physics. However, groundbreaking experiments that could use them in graphene are hampered by the conjecture that QH edge channels undergo a reconstruction with additional nontopological upstream modes. By performing scanning tunneling spectroscopy up to the edge of a graphene flake on hexagonal boron nitride, we show that QH edge channels are confined to a few magnetic lengths at the crystal edges. This implies that they are ideal 1D chiral channels defined by boundary conditions of vanishing electronic wave functions at the crystal edges, hence free of electrostatic reconstruction. We further evidence a uniform charge carrier density at the edges, incompatible with the existence of upstream modes. This work has profound implications for electron and heat transport experiments in graphene-based systems and other 2D crystalline materials.

Scattering and transport properties of the three classical Wigner-Dyson ensembles at the Anderson transition

An extensive numerical analysis of the scattering and transport properties of the power-law banded random matrix model (PBRM) at criticality in the presence of orthogonal, unitary, and symplectic symmetries is presented. Our results show a good agreement with existing analytical expressions in the metallic regime and with heuristic relations widely used in studies of the PBRM model in the presence of orthogonal and unitary symmetries. Moreover, our results confirm that the multifractal behavior of disordered systems at criticality can be probed by measuring scattering and transport properties, which is of paramount importance from the experimental point of view. Thus, a full picture of the scattering and transport properties of the PBRM model at criticality corresponding to the three classical Wigner-Dyson ensembles is provided.

Microwave Dynamical Conductivity in the Quantum Hall Regime

Dynamical conductivity contains information of dissipative and nondissipative processes induced by ac-electric fields. In the integer quantum Hall (QH) effect where the nondissipative Hall current is the most prominent feature, its robustness is assured by localized states within the Landau levels. We establish a noncontact method with a circular cavity resonator and detect the real and imaginary parts of the longitudinal and Hall conductivities at a microwave frequency in magnetic fields. The conventional Shubnikov-de Haas oscillations and QH plateaus are observed in the real parts of longitudinal and Hall conductivities, respectively, while periodic structures can be seen in the imaginary parts which are scaled by the QH filling factor. The latter originates from intra-Landau level transitions between different orbital angular momenta. The results demonstrate that the dynamical conductivity measurement provides microscopic information which is not accessible by conventional static methods. The present noncontact method would pave the way to reveal the electron dynamics in other two-dimensional systems such as twisted bilayer graphene.

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

We report scanning tunneling microscopy (STM) studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ∼100×. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.

Van Hove Singularities and Trap States in Two-Dimensional CdSe Nanoplatelets

Semiconductor nanoplatelets, which offer a compelling combination of the flatness of two-dimensional semiconductors and the inherent richness brought about by colloidal nanostructure synthesis, form an ideal and general testbed to investigate fundamental physical effects related to the dimensionality of semiconductors. With low temperature scanning tunnelling spectroscopy and tight binding calculations, we investigate the conduction band density of states of individual CdSe nanoplatelets. We find an occurrence of peaks instead of the typical steplike function associated with a quantum well, that rule out a free in-plane electron motion, in agreement with the theoretical density of states. This finding, along with the detection of deep trap states located on the edge facets, which also restrict the electron motion, provides a detailed picture of the actual lateral confinement in quantum wells with finite length and width.

Visualization of Multifractal Superconductivity in a Two-Dimensional Transition Metal Dichalcogenide in the Weak-Disorder Regime

Eigenstate multifractality is a distinctive feature of noninteracting disordered metals close to a metal-insulator transition, whose properties are expected to extend to superconductivity. While multifractality in three dimensions (3D) only develops near the critical point for specific strong-disorder strengths, multifractality in 2D systems is expected to be observable even for weak disorder. Here we provide evidence for multifractal features in the superconducting state of an intrinsic, weakly disordered single-layer NbSe₂ by means of low-temperature scanning tunneling microscopy/spectroscopy. The superconducting gap, characterized by its width, depth, and coherence peaks' amplitude, shows a characteristic spatial modulation coincident with the periodicity of the quasiparticle interference pattern. The strong spatial inhomogeneity of the superconducting gap width, proportional to the local order parameter in the weak-disorder regime, follows a log-normal statistical distribution as well as a power-law decay of the two-point correlation function, in agreement with our theoretical model. Furthermore, the experimental singularity spectrum f(α) shows anomalous scaling behavior typical from 2D weakly disordered systems.

Visualizing coexisting surface states in the weak and crystalline topological insulator Bi2TeI

Dual topological materials are unique topological phases that host coexisting surface states of different topological nature on the same or on different material facets. Here, we show that Bi₂TeI is a dual topological insulator. It exhibits band inversions at two time reversal symmetry points of the bulk band, which classify it as a weak topological insulator with metallic states on its 'side' surfaces. The mirror symmetry of the crystal structure concurrently classifies it as a topological crystalline insulator. We investigated Bi₂TeI spectroscopically to show the existence of both two-dimensional Dirac surface states, which are susceptible to mirror symmetry breaking, and one-dimensional channels that reside along the step edges. Their mutual coexistence on the step edge, where both facets join, is facilitated by momentum and energy segregation. Our observation of a dual topological insulator should stimulate investigations of other dual topology classes with distinct surface manifestations coexisting at their boundaries.

Anisotropic Two-Dimensional Screening at the Surface of Black Phosphorus

Electronic screening can have direct consequences for structural arrangements on the nanoscale, such as on the periodic ordering of adatoms on a surface. So far, such ordering phenomena have been explained in terms of isotropic screening of free electronlike systems. Here, we directly illustrate the structural consequences of anisotropic screening, making use of a highly anisotropic two-dimensional electron gas (2DEG) near the surface of black phosphorous. The presence of the 2DEG and its filling is controlled by adsorbed potassium atoms, which simultaneously serve to probe the electronic ordering. Using scanning tunneling microscopy, we show that the anisotropic screening leads to the formation of potassium chains with a well-defined orientation and spacing. We quantify the mean interaction potential utilizing statistical methods and find that the dimensionality and anisotropy of the screening is consistent with the presence of a band bending-induced 2DEG near the surface. The electronic dispersion of the 2DEG inferred by electronic ordering is consistent with that measured by angle-resolved photoemission spectroscopy.

Scanning nuclear resonance imaging of a hyperfine-coupled quantum Hall system

Nuclear resonance (NR) is widely used to detect and characterise nuclear spin polarisation and conduction electron spin polarisation coupled by a hyperfine interaction. While the macroscopic aspects of such hyperfine-coupled systems have been addressed in most relevant studies, the essential role of local variation in both types of spin polarisation has been indicated in 2D semiconductor systems. In this study, we apply a recently developed local and highly sensitive NR based on a scanning probe to a hyperfine-coupled quantum Hall (QH) system in a 2D electron gas subject to a strong magnetic field. We succeed in imaging the NR intensity and Knight shift, uncovering the spatial distribution of both the nuclear and electron spin polarisation. The results reveal the microscopic origin of the nonequilibrium QH phenomena, and highlight the potential use of our technique in microscopic studies on various electron spin systems as well as their correlations with nuclear spins.

Direct Probing of the Electronic Structures of Single-Layer and Bilayer Graphene with a Hexagonal Boron Nitride Tunneling Barrier

The chemical and mechanical stability of hexagonal boron nitride (h-BN) thin films and their compatibility with other free-standing two-dimensional (2D) crystals to form van der Waals heterostructures make the h-BN-2D tunnel junction an intriguing experimental platform not only for the engineering of specific device functionalities but also for the promotion of quantum measurement capabilities. Here, we exploit the h-BN-graphene tunnel junction to directly probe the electronic structures of single-layer and bilayer graphene in the presence and the absence of external magnetic fields with unprecedented high signal-to-noise ratios. At a zero magnetic field, we identify the tunneling spectra related to the charge neutrality point and the opening of the electric-field-induced bilayer energy gap. In the quantum Hall regime, the quantization of 2D electron gas into Landau levels (LL) is seen as early as 0.2 T, and as many as 30 well-separated LL tunneling conductance oscillations are observed for both electron- and hole-doped regions. Our device simulations successfully reproduce the experimental observations. Additionally, we extract the relative permittivity of three-to-five layer h-BN and find that the screening capability of thin h-BN films is as much as 60% weaker than bulk h-BN.

Probing the Nodal Structure of Landau Level Wave Functions in Real Space

The inversion layer of p-InSb(110) obtained by Cs adsorption of 1.8% of a monolayer is used to probe the Landau level wave functions within smooth potential valleys by scanning tunneling spectroscopy at 14 T. The nodal structure becomes apparent as a double peak structure of each spin polarized first Landau level, while the zeroth Landau level exhibits a single peak per spin level only. The real space data show single rings of the valley-confined drift states for the zeroth Landau level and double rings for the first Landau level. The result is reproduced by a recursive Green function algorithm using the potential landscape obtained experimentally. We show that the result is generic by comparing the local density of states from the Green function algorithm with results from a well-controlled analytic model based on the guiding center approach.

Electronic and optical properties of graphene nanoribbons in external fields

A review work is done for the electronic and optical properties of graphene nanoribbons in magnetic, electric, composite, and modulated fields. Effects due to the lateral confinement, curvature, stacking, non-uniform subsystems and hybrid structures are taken into account. The special electronic properties, induced by complex competitions between external fields and geometric structures, include many one-dimensional parabolic subbands, standing waves, peculiar edge-localized states, width- and field-dependent energy gaps, magnetic-quantized quasi-Landau levels, curvature-induced oscillating Landau subbands, crossings and anti-crossings of quasi-Landau levels, coexistence and combination of energy spectra in layered structures, and various peak structures in the density of states. There exist diverse absorption spectra and different selection rules, covering edge-dependent selection rules, magneto-optical selection rule, splitting of the Landau absorption peaks, intragroup and intergroup Landau transitions, as well as coexistence of monolayer-like and bilayer-like Landau absorption spectra. Detailed comparisons are made between the theoretical calculations and experimental measurements. The predicted results, the parabolic subbands, edge-localized states, gap opening and modulation, and spatial distribution of Landau subbands, have been identified by various experimental measurements.

Surface Landau levels and spin states in bismuth (111) ultrathin films

The development of next-generation electronics is much dependent on the discovery of materials with exceptional surface-state spin and valley properties. Because of that, bismuth has attracted a renewed interest in recent years. However, despite extensive studies, the intrinsic electronic transport properties of Bi surfaces are largely undetermined due to the strong interference from the bulk. Here we report the unambiguous determination of the surface-state Landau levels in Bi (111) ultrathin films using scanning tunnelling microscopy under magnetic fields perpendicular to the surface. The Landau levels of the electron-like and the hole-like carriers are accurately characterized and well described by the band structure of the Bi (111) surface from density functional theory calculations. Some specific surface spin states with a large g-factor are identified. Our findings shed light on the exploiting surface-state properties of Bi for their applications in spintronics and valleytronics.

Observation of Zeeman effect in topological surface state with distinct material dependence

Manipulating the spins of the topological surface states represents an essential step towards exploring the exotic quantum states emerging from the time reversal symmetry breaking via magnetic doping or external magnetic fields. The latter case relies on the Zeeman effect and thereby we need to estimate the g-factor of the topological surface state precisely. Here, we report the direct observations of the Zeeman effect at the surfaces of Bi₂Se₃ and Sb₂Te₂Se by spectroscopic-imaging scanning tunnelling microscopy. The Zeeman shift of the zero mode Landau level is identified unambiguously by appropriately excluding the extrinsic effects arising from the nonlinearity in the band dispersion of the topological surface state and the spatially varying potential. Surprisingly, the g-factors of the topological surface states in Bi₂Se₃ and Sb₂Te₂Se are very different (+18 and −6, respectively). Such remarkable material dependence opens up a new route to control the spins of the topological surface states.

The knowledge of how electrons behave under magnetic field provides inherent information for exotic quantum states. Here, Fu et al. find different g-factors of topological surface states in Bi₂Se₃ and Sb₂Te₂Se, which suggests possible control of such states in spin-related applications.

Nanoscale determination of the mass enhancement factor in the lightly doped bulk insulator lead selenide

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties that could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale level. This opens up a new pathway for investigating the local effects of doping and strain on the mass enhancement factor.

Electron–phonon coupling influences the thermal and electronic properties of many solid materials. Zeljkovic et al. now combine Landau level spectroscopy and scanning tunnelling microscopy to extract quantitative information on electron–phonon coupling in the insulator lead selenide.

Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators

The tunability of topological surface states and controllable opening of the Dirac gap are of fundamental and practical interest in the field of topological materials. In the newly discovered topological crystalline insulators (TCIs), theory predicts that the Dirac node is protected by a crystalline symmetry and that the surface state electrons can acquire a mass if this symmetry is broken. Recent studies have detected signatures of a spontaneously generated Dirac gap in TCIs; however, the mechanism of mass formation remains elusive. In this work, we present scanning tunnelling microscopy (STM) measurements of the TCI Pb1-xSnxSe for a wide range of alloy compositions spanning the topological and non-topological regimes. The STM topographies reveal a symmetry-breaking distortion on the surface, which imparts mass to the otherwise massless Dirac electrons-a mechanism analogous to the long sought-after Higgs mechanism in particle physics. Interestingly, the measured Dirac gap decreases on approaching the trivial phase, whereas the magnitude of the distortion remains nearly constant. Our data and calculations reveal that the penetration depth of Dirac surface states controls the magnitude of the Dirac mass. At the limit of the critical composition, the penetration depth is predicted to go to infinity, resulting in zero mass, consistent with our measurements. Finally, we discover the existence of surface states in the non-topological regime, which have the characteristics of gapped, double-branched Dirac fermions and could be exploited in realizing superconductivity in these materials.

Non-universality of scaling exponents in quantum Hall transitions

We have investigated experimentally the scaling behaviour of quantum Hall transitions in GaAs/AlGaAs heterostructures of a range of mobility, carrier concentration, and spacer layer width. All three critical scaling exponents γ, κ and p were determined independently for each sample. We measure the localization length exponent to be γ ≈ 2.3, in good agreement with expected predictions from scaling theory, but κ and p are found to possess non-universal values. Results obtained for κ range from κ = 0.16 ± 0.02 to κ = 0.67 ± 0.02, and are found to be Landau level (LL) dependent, whereas p is found to decrease with increasing sample mobility. Our results demonstrate the existence of two transport regimes in the LL conductivity peak; universality is found within the quantum coherent transport regime present in the tails of the conductivity peak, but is absent within the classical transport regime found close to the critical point at the centre of the conductivity peak. We explain these results using a percolation model and show that the critical scaling exponent depends on certain important length scales that correspond to the microscopic description of electron transport in the bulk of a two-dimensional electron system.

Imaging the dynamics of free-electron Landau states

Landau levels and states of electrons in a magnetic field are fundamental quantum entities underlying the quantum Hall and related effects in condensed matter physics. However, the real-space properties and observation of Landau wave functions remain elusive. Here we report the real-space observation of Landau states and the internal rotational dynamics of free electrons. States with different quantum numbers are produced using nanometre-sized electron vortex beams, with a radius chosen to match the waist of the Landau states, in a quasi-uniform magnetic field. Scanning the beams along the propagation direction, we reconstruct the rotational dynamics of the Landau wave functions with angular frequency ~100 GHz. We observe that Landau modes with different azimuthal quantum numbers belong to three classes, which are characterized by rotations with zero, Larmor and cyclotron frequencies, respectively. This is in sharp contrast to the uniform cyclotron rotation of classical electrons, and in perfect agreement with recent theoretical predictions.

Landau states are associated with the quantised orbits of charged particles in magnetic fields. By manipulating electron vortex beams in a magnetic field, this study reconstructs the internal quantum dynamics of free-electron Landau states, which differs strongly from the classical cyclotron rotation.

Screening charged impurities and lifting the orbital degeneracy in graphene by populating Landau levels

We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system and the influence of the impurity on its electronic environment. Using scanning tunneling microscopy and Landau level spectroscopy, we demonstrate that in the presence of a magnetic field the strength of the impurity can be tuned by controlling the occupation of Landau-level states with a gate voltage. At low occupation the impurity is screened, becoming essentially invisible. Screening diminishes as states are filled until, for fully occupied Landau levels, the unscreened impurity significantly perturbs the spectrum in its vicinity. In this regime we report the first observation of Landau-level splitting into discrete states due to lifting the orbital degeneracy.

Fixing the energy scale in scanning tunneling microscopy on semiconductor surfaces

In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related conductance is observed in negative, zero, and positive band-bending regimes. An Anderson-Hubbard model is used to rationalize our findings, capturing the crossover between the acceptor state being part of an impurity band for zero band bending and the acceptor state being split off and localized for strong negative or positive band bending, respectively.

Multifractality at Anderson transitions with Coulomb interaction

We explore mesoscopic fluctuations and correlations of the local density of states (LDOS) near localization transition in a disordered interacting electronic system. It is shown that the LDOS multifractality survives in the presence of the Coulomb interaction. We calculate the spectrum of multifractal dimensions in 2+ϵ spatial dimensions and show that it differs from that in the absence of interaction. The multifractal character of fluctuations and correlations of the LDOS can be studied experimentally by scanning tunneling microscopy of two-dimensional and three-dimensional disordered structures.

Finite-size effects and irrelevant corrections to scaling near the integer quantum Hall transition

We present a numerical finite-size scaling study of the localization length in long cylinders near the integer quantum Hall transition employing the Chalker-Coddington network model. Corrections to scaling that decay slowly with increasing system size make this analysis a very challenging numerical problem. In this work we develop a novel method of stability analysis that allows for a better estimate of error bars. Applying the new method we find consistent results when keeping second (or higher) order terms of the leading irrelevant scaling field. The knowledge of the associated (negative) irrelevant exponent y is crucial for a precise determination of other critical exponents, including multifractal spectra of wave functions. We estimate |y|>/~0.4, which is considerably larger than most recently reported values. Within this approach we obtain the localization length exponent 2.62±0.06 confirming recent results. Our stability analysis has broad applicability to other observables at integer quantum Hall transition, as well as other critical points where corrections to scaling are present.

Unraveling quantum Hall breakdown in bilayer graphene with scanning gate microscopy

Investigating the structure of quantized plateaus in the Hall conductance of graphene is a powerful way of probing its crystalline and electronic structure and will also help to establish whether graphene can be used as a robust standard of resistance for quantum metrology. We use low-temperature scanning gate microscopy to image the interplateau breakdown of the quantum Hall effect in an exfoliated bilayer graphene flake. Scanning gate images captured during breakdown exhibit intricate patterns where the conductance is strongly affected by the presence of the scanning probe tip. The maximum density and intensity of the tip-induced conductance perturbations occur at half-integer filling factors, midway between consecutive quantum Hall plateau, while the intensity of individual sites shows a strong dependence on tip-voltage. Our results are well-described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering in a network of saddle points separating localized states.

Visualizing Landau levels of Dirac electrons in a one-dimensional potential

Using scanning tunneling spectroscopy, we study a 3D topological insulator Bi(2)Te(3) with a periodic structural deformation (buckling). The buckled surface allows us to measure the response of Dirac electrons in a magnetic field to the presence of a well-defined potential variation. We find that while the n=0 Landau level exhibits a 12 meV energy shift across the buckled structure at 7 T, the amplitude of this shift changes with the Landau level index. Modeling these effects reveals that the Landau level behavior encodes information on the spatial extent of their wave functions. Our findings have important implications for transport and magnetoresistance measurements in Dirac materials with engineered potential landscapes.

Robust nodal structure of Landau level wave functions revealed by Fourier transform scanning tunneling spectroscopy

Scanning tunneling spectroscopy is used to study the real-space local density of states of a two-dimensional electron system in a magnetic field, in particular within higher Landau levels. By Fourier transforming the local density of states, we find a set of n radial minima at fixed momenta for the nth Landau levels. The momenta of the minima depend only on the inverse magnetic length. By comparison with analytical theory and numerical simulations, we attribute the minima to the nodes of the quantum cyclotron orbits, which decouple in a Fourier representation from the random guiding center motion due to disorder. Adequate Fourier filtering reveals the nodal structure in real space in some areas of the sample with relatively smooth potential disorder.

Diagrammatic approach for the high-temperature regime of quantum Hall transitions

We use a general diagrammatic formalism based on a local conductivity approach to compute electronic transport in continuous media with long-range disorder, in the absence of quantum interference effects. The method allows us then to investigate the interplay of dissipative processes and random drifting of electronic trajectories in the high-temperature regime of quantum Hall transitions. We obtain that the longitudinal conductance σ(xx) scales with an exponent κ=0.767±0.002 in agreement with the value κ=10/13 conjectured from analogies to classical percolation. We also derive a microscopic expression for the temperature-dependent peak value of σ(xx), useful to extract κ from experiments.

Probing electron-electron interaction in quantum Hall systems with scanning tunneling spectroscopy

Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled from bulk states and exhibits spreading resistance within the insulating quantum Hall phases. In quantitative agreement with calculations we find an exchange enhancement of the spin splitting. Moreover, we observe that both the spatially averaged as well as the local density of states feature a characteristic Coulomb gap at the Fermi level. These results show that electron-electron interaction can be probed down to a resolution below all relevant length scales.

Scaling and localization lengths of a topologically disordered system

We consider a noninteracting disordered system designed to model particle diffusion, relaxation in glasses, and impurity bands of semiconductors. Disorder originates in the random spatial distribution of sites. We find strong numerical evidence that this model displays the same universal behavior as the standard Anderson model. We use finite-size scaling to find the localization length as a function of energy and density, including localized states away from the delocalization transition. Results at many energies all fit onto the same universal scaling curve.

Invited review article: A 10 mK scanning probe microscopy facility

We describe the design, development and performance of a scanning probe microscopy (SPM) facility operating at a base temperature of 10 mK in magnetic fields up to 15 T. The microscope is cooled by a custom designed, fully ultra-high vacuum (UHV) compatible dilution refrigerator (DR) and is capable of in situ tip and sample exchange. Subpicometer stability at the tip-sample junction is achieved through three independent vibration isolation stages and careful design of the dilution refrigerator. The system can be connected to, or disconnected from, a network of interconnected auxiliary UHV chambers, which include growth chambers for metal and semiconductor samples, a field-ion microscope for tip characterization, and a fully independent additional quick access low temperature scanning tunneling microscope (STM) and atomic force microscope (AFM) system. To characterize the system, we present the cooling performance of the DR, vibrational, tunneling current, and tip-sample displacement noise measurements. In addition, we show the spectral resolution capabilities with tunneling spectroscopy results obtained on an epitaxial graphene sample resolving the quantum Landau levels in a magnetic field, including the sublevels corresponding to the lifting of the electron spin and valley degeneracies.

Imaging Coulomb islands in a quantum Hall interferometer

In the quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward the theory that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of QH Coulomb islands, and reveal the spatial structure of transport inside a QH interferometer. Locations of electron islands are found by modulating the tunnelling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high-magnetic-field magnetoresistance oscillations, and opens the way to further local-scale manipulations of QH localized states.

Critical parameters from a generalized multifractal analysis at the Anderson transition

We propose a generalization of multifractal analysis that is applicable to the critical regime of the Anderson localization-delocalization transition. The approach reveals that the behavior of the probability distribution of wave function amplitudes is sufficient to characterize the transition. In combination with finite-size scaling, this formalism permits the critical parameters to be estimated without the need for conductance or other transport measurements. Applying this method to high-precision data for wave function statistics obtained by exact diagonalization of the three-dimensional Anderson model, we estimate the critical exponent ν=1.58±0.03.

Holders for in situ treatments of scanning tunneling microscopy tips

We have developed holders for scanning tunneling microscopy tips that can be used for in situ treatments of the tips, such as electron bombardment (EB) heating, ion sputtering, and the coating of magnetic materials. The holders can be readily installed into the transfer paths and do not require any special type of base stages. Scanning electron microscopy is used to characterize the tip apex after EB heating. Also, spin-polarized scanning tunneling spectroscopy using an Fe coated W tip on the Cr(001) single crystal surface is performed in order to confirm both the capability of heating a tip up to about 2200 K and the spin sensitivity of the magnetically coated tip.

A low-temperature high resolution scanning tunneling microscope with a three-dimensional magnetic vector field operating in ultrahigh vacuum

We present a low-temperature ultrahigh vacuum (UHV) scanning tunneling microscope setup with a combination of a superconducting solenoid coil and two split-pair magnets, providing a rotatable magnetic field up to 500 mT applicable in all spatial directions. An absolute field maximum of B=7 T(3 T) can be applied perpendicular (parallel) to the sample surface. The instrument is operated at a temperature of 4.8 K. Topographic and spectroscopic measurements on tungsten carbide and indium antimonide revealed a z-noise of 300 fm(pp), which barely changes in magnetic field. The microscope is equipped with a tip exchange mechanism and a lateral sample positioning stage, which allows exact positioning of the tip with an accuracy of 5 microm prior to the measurement. Additional contacts to the sample holder allow, e.g., the application of an additional gate voltage. The UHV part of the system contains versatile possibilities of in situ sample and tip preparation as well as low-energy electron diffraction and Auger analysis.

Multifractal analysis with the probability density function at the three-dimensional anderson transition

The probability density function (PDF) for critical wave function amplitudes is studied in the three-dimensional Anderson model. We present a formal expression between the PDF and the multifractal spectrum f(alpha) in which the role of finite-size corrections is properly analyzed. We show the non-Gaussian nature and the existence of a symmetry relation in the PDF. From the PDF, we extract information about f(alpha) at criticality such as the presence of negative fractal dimensions and the possible existence of termination points. A PDF-based multifractal analysis is shown to be a valid alternative to the standard approach based on the scaling of inverse participation ratios.

Localized distributions of quasi-two-dimensional electronic states near defects artificially created at graphite surfaces in magnetic fields

We measured the local density of states of a quasi two-dimensional electron system (2DES) near defects, artificially created by Ar-ion sputtering, on surfaces of highly oriented pyrolytic graphite (HOPG) with scanning tunneling spectroscopy (STS) in high magnetic fields. At valley energies of the Landau level spectrum, we found two typical localized distributions of the 2DES depending on the defects. These are new types of distributions which are not observed in the previous STS work at the HOPG surface near a point defect [Y. Niimi, Phys. Rev. Lett. 97, 236804 (2006).10.1103/PhysRevLett.97.236804]. With increasing energy, we observed gradual transformation from the localized distributions to the extended ones as expected for the integer quantum Hall state. We show that the defect potential depth is responsible for the two localized distributions from comparison with theoretical calculations.