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Alikin D, Safina V, Abramov A, Slautin B, Shur V, Pavlenko A, Kholkin A. Defining ferroelectric characteristics with reversible piezoresponse: PUND switching spectroscopy PFM characterization. NANOTECHNOLOGY 2024; 35:175702. [PMID: 38181439 DOI: 10.1088/1361-6528/ad1b97] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Accepted: 01/05/2024] [Indexed: 01/07/2024]
Abstract
Detecting ferroelectricity at micro- and nanoscales is crucial for advanced nanomaterials and materials with complicated topography. Switching spectroscopy piezoresponse force microscopy (SSPFM), which involves measuring piezoelectric hysteresis loops via a scanning probe microscopy tip, is a widely accepted approach to characterize polarization reversal at the local scale and confirm ferroelectricity. However, the local hysteresis loops acquired through this method often exhibit unpredictable shapes, a phenomenon often attributed to the influence of parasitic factors such as electrostatic forces and current flow. Our research has uncovered that the deviation in hysteresis loop shapes can be caused by spontaneous backswitching occurring after polarization reversal. Moreover, we've determined that the extent of this effect can be exacerbated when employing inappropriate SSPFM waveform parameters, including duration, frequency, and AC voltage amplitude. Notably, the conventional 'pulse-mode' SSPFM method has been found to intensify spontaneous backswitching. In response to these challenges, we have redesigned SSPFM approach by introducing the positive up-negative down (PUND) method within the 'step-mode' SSPFM. This modification allows for effective probing of local piezoelectric hysteresis loops in ferroelectrics with reversible piezoresponse while removing undesirable electrostatic contribution. This advancement extends the applicability of the technique to a diverse range of ferroelectrics, including semiconductor ferroelectrics and relaxors, promising a more reliable and accurate characterization of their properties.
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Affiliation(s)
- Denis Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Violetta Safina
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Alexander Abramov
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Boris Slautin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Vladimir Shur
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
| | - Anatoly Pavlenko
- Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, Russia
| | - Andrei Kholkin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russia
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Alikin D, Abramov A, Turygin A, Ievlev A, Pryakhina V, Karpinsky D, Hu Q, Jin L, Shur V, Tselev A, Kholkin A. Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy. SMALL METHODS 2022; 6:e2101289. [PMID: 34967150 DOI: 10.1002/smtd.202101289] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/15/2021] [Indexed: 06/14/2023]
Abstract
Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.
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Affiliation(s)
- Denis Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Alexander Abramov
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Anton Turygin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Anton Ievlev
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Victoria Pryakhina
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Dmitry Karpinsky
- Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, 220072, Belarus
| | - Qingyuan Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Li Jin
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Vladimir Shur
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Alexander Tselev
- Department of Physics & CICECO, University of Aveiro, 3810-193, Aveiro, Portugal
| | - Andrei Kholkin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
- Department of Physics & CICECO, University of Aveiro, 3810-193, Aveiro, Portugal
- Piezo- and Magnetoelectric Materials Research & Development Centre, Research School of Chemistry & Applied Biomedical Sciences, National Research Tomsk Polytechnic University, Tomsk, 634050, Russia
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Grünebohm A, Marathe M, Khachaturyan R, Schiedung R, Lupascu DC, Shvartsman VV. Interplay of domain structure and phase transitions: theory, experiment and functionality. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:073002. [PMID: 34731841 DOI: 10.1088/1361-648x/ac3607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Domain walls and phase boundaries are fundamental ingredients of ferroelectrics and strongly influence their functional properties. Although both interfaces have been studied for decades, often only a phenomenological macroscopic understanding has been established. The recent developments in experiments and theory allow to address the relevant time and length scales and revisit nucleation, phase propagation and the coupling of domains and phase transitions. This review attempts to specify regularities of domain formation and evolution at ferroelectric transitions and give an overview on unusual polar topological structures that appear as transient states and at the nanoscale. We survey the benefits, validity, and limitations of experimental tools as well as simulation methods to study phase and domain interfaces. We focus on the recent success of these tools in joint scale-bridging studies to solve long lasting puzzles in the field and give an outlook on recent trends in superlattices.
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Affiliation(s)
- Anna Grünebohm
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Madhura Marathe
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
| | - Ruben Khachaturyan
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Raphael Schiedung
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- National Institute for Material Science (NIMS), Tsukuba 305-0047, Japan
| | - Doru C Lupascu
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
| | - Vladimir V Shvartsman
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
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Kalinin SV, Strelcov E, Belianinov A, Somnath S, Vasudevan RK, Lingerfelt EJ, Archibald RK, Chen C, Proksch R, Laanait N, Jesse S. Big, Deep, and Smart Data in Scanning Probe Microscopy. ACS NANO 2016; 10:9068-9086. [PMID: 27676453 DOI: 10.1021/acsnano.6b04212] [Citation(s) in RCA: 56] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Scanning probe microscopy (SPM) techniques have opened the door to nanoscience and nanotechnology by enabling imaging and manipulation of the structure and functionality of matter at nanometer and atomic scales. Here, we analyze the scientific discovery process in SPM by following the information flow from the tip-surface junction, to knowledge adoption by the wider scientific community. We further discuss the challenges and opportunities offered by merging SPM with advanced data mining, visual analytics, and knowledge discovery technologies.
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Affiliation(s)
| | | | | | | | | | | | | | - Chaomei Chen
- College of Computing and Informatics, Drexel University , Philadelphia, Pennsylvania 19104, United States
| | - Roger Proksch
- Asylum Research, an Oxford Instruments Company , Santa Barbara, California 93117, United States
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Belianinov A, Vasudevan R, Strelcov E, Steed C, Yang SM, Tselev A, Jesse S, Biegalski M, Shipman G, Symons C, Borisevich A, Archibald R, Kalinin S. Big data and deep data in scanning and electron microscopies: deriving functionality from multidimensional data sets. ADVANCED STRUCTURAL AND CHEMICAL IMAGING 2015; 1:6. [PMID: 27547705 PMCID: PMC4977326 DOI: 10.1186/s40679-015-0006-6] [Citation(s) in RCA: 67] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/27/2015] [Accepted: 04/21/2015] [Indexed: 11/10/2022]
Abstract
The development of electron and scanning probe microscopies in the second half of the twentieth century has produced spectacular images of the internal structure and composition of matter with nanometer, molecular, and atomic resolution. Largely, this progress was enabled by computer-assisted methods of microscope operation, data acquisition, and analysis. Advances in imaging technology in the beginning of the twenty-first century have opened the proverbial floodgates on the availability of high-veracity information on structure and functionality. From the hardware perspective, high-resolution imaging methods now routinely resolve atomic positions with approximately picometer precision, allowing for quantitative measurements of individual bond lengths and angles. Similarly, functional imaging often leads to multidimensional data sets containing partial or full information on properties of interest, acquired as a function of multiple parameters (time, temperature, or other external stimuli). Here, we review several recent applications of the big and deep data analysis methods to visualize, compress, and translate this multidimensional structural and functional data into physically and chemically relevant information.
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Affiliation(s)
- Alex Belianinov
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Rama Vasudevan
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Evgheni Strelcov
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Chad Steed
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Sang Mo Yang
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 151-747 South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 151-747 South Korea
| | - Alexander Tselev
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Stephen Jesse
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Michael Biegalski
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Galen Shipman
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- Computer, Computational, and Statistical Sciences, Los Alamos National Laboratory, Los Alamos, NM 87545 USA
| | - Christopher Symons
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Albina Borisevich
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Rick Archibald
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
| | - Sergei Kalinin
- Institute for Functional Imaging of Materials, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
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Jesse S, Vasudevan R, Collins L, Strelcov E, Okatan M, Belianinov A, Baddorf A, Proksch R, Kalinin S. Band Excitation in Scanning Probe Microscopy: Recognition and Functional Imaging. Annu Rev Phys Chem 2014; 65:519-36. [DOI: 10.1146/annurev-physchem-040513-103609] [Citation(s) in RCA: 92] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- S. Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
| | - R.K. Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
| | - L. Collins
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
| | - E. Strelcov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
| | - M.B. Okatan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
| | - A. Belianinov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
| | - A.P. Baddorf
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
| | - R. Proksch
- Asylum Research, an Oxford Instruments Company, Santa Barbara, California 93117
| | - S.V. Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831; ,
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McQuaid RGP, Chang LW, Gregg JM. The effect of antinotches on domain wall mobility in single crystal ferroelectric nanowires. NANO LETTERS 2010; 10:3566-3571. [PMID: 20715806 DOI: 10.1021/nl101830d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Changes in domain wall mobility, caused by the presence of antinotches in single crystal BaTiO(3) nanowires, have been investigated. While antinotches appeared to cause a slight broadening in the distribution of switching events, observed as a function of applied electric field (inferred from capacitance-voltage measurements), the effect was often subtle. Greater clarity of information was obtained from Rayleigh analysis of the capacitance variation with ac field amplitude. Here the magnitude of the domain wall mobility parameter (alpha) associated with irreversible wall movements was found to be reduced by the presence of antinotches--an effect which became more noticeable on heating toward the Curie temperature. The reduction in this domain wall mobility was contrasted with the noticeable enhancement found previously in ferroelectric wires with notches. Finite element modeling of the electric field, developed in the nanowires during switching, revealed regions of increased and decreased local field at the center of the notch and antinotch structures, respectively; the absolute magnitude of field enhancement in the notch centers was considerably greater than the field reduction in the center of the antinotches and this was commensurate with the manner in, and degree to, which domain wall mobility appeared to be affected. We therefore conclude that the main mechanism by which morphology alters the irreversible component of the domain wall mobility in ferroelectric wire structures is via the manner in which morphological variations alter the spatial distribution of the electric field.
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Affiliation(s)
- R G P McQuaid
- Centre for Nanostructured Media, School of Maths and Physics, Queen's University Belfast, Belfast BT7 1NN, UK
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Nespoulous M, Blanc C, Nobili M. Orientational quenched disorder of a nematic liquid crystal. PHYSICAL REVIEW LETTERS 2010; 104:097801. [PMID: 20367011 DOI: 10.1103/physrevlett.104.097801] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2009] [Indexed: 05/29/2023]
Abstract
By means of direct imaging, we map the surface heterogeneities of the nematic director orientation on a SiOx anchoring layer. The spatial correlations of surface director orientations are well fitted with a compressed exponential with exponent of 1.5 and typical correlation length of few microns. To discuss these results a formal analogy is established between the equation governing the nematic surface torques and the Langevin equation. Based on this analogy we prove that the disorder is spatially correlated orientational quenched disorder. The measured correlation length is discussed in terms of substrate morphology and molecular adsorption.
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Affiliation(s)
- Mathieu Nespoulous
- Laboratoire des Colloïdes, Verres et Nanomatériaux, Université Montpellier II, Place Eugène Bataillon, 34090 Montpellier, France
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Ovchinnikov OS, Jesse S, Bintacchit P, Trolier-McKinstry S, Kalinin SV. Disorder identification in hysteresis data: recognition analysis of the random-bond-random-field Ising model. PHYSICAL REVIEW LETTERS 2009; 103:157203. [PMID: 19905664 DOI: 10.1103/physrevlett.103.157203] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2009] [Revised: 08/31/2009] [Indexed: 05/28/2023]
Abstract
An approach for the direct identification of disorder type and strength in physical systems based on recognition analysis of hysteresis loop shape is developed. A large number of theoretical examples uniformly distributed in the parameter space of the system is generated and is decorrelated using principal component analysis (PCA). The PCA components are used to train a feed-forward neural network using the model parameters as targets. The trained network is used to analyze hysteresis loops for the investigated system. The approach is demonstrated using a 2D random-bond-random-field Ising model, and polarization switching in polycrystalline ferroelectric capacitors.
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Affiliation(s)
- O S Ovchinnikov
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
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