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Giraldo JN, Hrubý J, Vavrečková Š, Fellner OF, Havlíček L, Henry D, de Silva S, Herchel R, Bartoš M, Šalitroš I, Santana VT, Barbara P, Nemec I, Neugebauer P. Tetracoordinate Co(II) complexes with semi-coordination as stable single-ion magnets for deposition on graphene. Phys Chem Chem Phys 2023; 25:29516-29530. [PMID: 37901907 PMCID: PMC10631493 DOI: 10.1039/d3cp01426f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 10/03/2023] [Indexed: 10/31/2023]
Abstract
We present a theoretical and experimental study of two tetracoordinate Co(II)-based complexes with semi-coordination interactions, i.e., non-covalent interactions involving the central atom. We argue that such interactions enhance the thermal and structural stability of the compounds, making them appropriate for deposition on substrates, as demonstrated by their successful deposition on graphene. DC magnetometry and high-frequency electron spin resonance (HF-ESR) experiments revealed an axial magnetic anisotropy and weak intermolecular antiferromagnetic coupling in both compounds, supported by theoretical predictions from complete active space self-consistent field calculations complemented by N-electron valence state second-order perturbation theory (CASSCF-NEVPT2), and broken-symmetry density functional theory (BS-DFT). AC magnetometry demonstrated that the compounds are field-induced single-ion magnets (SIMs) at applied static magnetic fields, with slow relaxation of magnetization governed by a combination of quantum tunneling, Orbach, and direct relaxation mechanisms. The structural stability under ambient conditions and after deposition was confirmed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Theoretical modeling by DFT of different configurations of these systems on graphene revealed n-type doping of graphene originating from electron transfer from the deposited molecules, confirmed by electrical transport measurements and Raman spectroscopy.
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Affiliation(s)
- Jorge Navarro Giraldo
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
| | - Jakub Hrubý
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
| | - Šárka Vavrečková
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
- Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2, 61669 Brno, Czech Republic
| | - Ondřej F Fellner
- Department of Inorganic Chemistry, Faculty of Science, Palacký University, 17. listopadu 12, 77147 Olomouc, Czech Republic
| | - Lubomír Havlíček
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
- Institute of Physics of Materials, Czech Academy of Sciences, Žižkova 22, 61662 Brno, Czech Republic
| | - DaVonne Henry
- Department of Physics, Georgetown University, Washington, DC, USA
| | - Shehan de Silva
- Department of Physics, Georgetown University, Washington, DC, USA
| | - Radovan Herchel
- Department of Inorganic Chemistry, Faculty of Science, Palacký University, 17. listopadu 12, 77147 Olomouc, Czech Republic
| | - Miroslav Bartoš
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
| | - Ivan Šalitroš
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
- Department of Inorganic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology in Bratislava, Bratislava SK-81237, Slovakia
| | - Vinicius T Santana
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
| | - Paola Barbara
- Department of Physics, Georgetown University, Washington, DC, USA
| | - Ivan Nemec
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
- Department of Inorganic Chemistry, Faculty of Science, Palacký University, 17. listopadu 12, 77147 Olomouc, Czech Republic
| | - Petr Neugebauer
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic.
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Porto JAS, Beserra DJP, de Vasconcelos FM, Silva PV, Girão EC. Electronic properties and carrier mobilities of nanocarbons formed by non-benzoidal building blocks. Phys Chem Chem Phys 2023; 25:27053-27064. [PMID: 37791620 DOI: 10.1039/d3cp01436c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
Exotic 1D and 2D carbon nanostructures have been grown in the laboratory in the last few years by means of surface-assisted chemical routes. In these processes, the strategical choice of a molecular precursor plays a dominant role in the determination of the synthesized nanocarbon. Further variations of these techniques are able to produce non-benzoidal carbon quantum-dots (QDs). Considering this experimental scenario as motivation, we propose a series of nanoribbon systems based on concatenating recently synthesized carbon QDs containing pentagonal, hexagonal, and heptagonal rings. We use density functional theory (DFT) simulations to reveal their properties can range from metallic to semiconducting depending on the concatenation hierarchy used to form the nanoribbons. This DFT implementation is based on a LCAO approach to describe valence wavefunctions and most of the simulations employ the PBE-GGA functional. Since this functional is known to underestimate band gaps, we also use the B3LYP functional in a plane-wave DFT approach for a selected case for comparison purposes. These systems show a different gap versus width relationship compared to conventional graphene nanoribbons setups and a particular set of carrier mobility values. We further discuss the interplay between the QD's frontier states and the electronic properties of the nanoribbons in light of their structural details.
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Affiliation(s)
- João Alberto Santos Porto
- Programa de Pós-Graduacão em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, CEP 64049-550, Teresina, PI, Brazil.
- Universidade Estadual do Maranhão - UEMA, Departamento de Matemática e Física - Campus Caxias, CEP 65604-380, Caxias, Maranhão, Brazil
| | - David Joseph Pereira Beserra
- Instituto Federal de Educação, Ciência e Tecnologia do Maranhão - Campus Buriticupu, CEP 65393-000, Buriticupu, Maranhão, Brazil
| | - Fabrício Morais de Vasconcelos
- Instituto Federal de Educação, Ciência e Tecnologia do Piauí - Campus São João do PI, CEP 64760-000, São João do PI, Piauí, Brazil
| | - Paloma Vieira Silva
- Coordenação do Curso de Licenciatura em Educação do Campo/Ciências da Natureza, Universidade Federal do Piauí, CEP 64808-605, Floriano, Piauí, Brazil
| | - Eduardo Costa Girão
- Programa de Pós-Graduacão em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, CEP 64049-550, Teresina, PI, Brazil.
- Departamento de Física, Universidade Federal do Piauí, CEP 64049-550, Teresina, Piauí, Brazil
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Zhang T, Yu J, Xing L, Wulan Q, Liu Z. Strongly suppressed diffuse scattering in periodic graphene metamaterials. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. A, OPTICS, IMAGE SCIENCE, AND VISION 2023; 40:759-764. [PMID: 37132970 DOI: 10.1364/josaa.478482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
As an emerging two-dimensional material, graphene offers an alternative material platform for exploring new metamaterial phenomena and device functionalities. In this work, we examine diffuse scattering properties in graphene metamaterials. We take periodic graphene nanoribbons as a representative example and show that diffuse reflection in graphene metamaterials as dominated by diffraction orders is restricted to wavelengths less than that of first-order Rayleigh anomaly, and is enhanced by plasmonic resonances in graphene nanoribbons, as similar to metamaterials made of noble metals. However, the overall magnitude of diffuse reflection in graphene metamaterial is less than 10-2 due to the large period to nanoribbon size ratio and ultra-thin thickness of the graphene sheet, which suppress the grating effect from the structural periodicity. Our numerical results indicate that, in contrast to the cases of metallic metamaterials, diffuse scattering plays a negligible role in spectral characterization of graphene metamaterials in cases with large resonance wavelength to graphene feature size ratio, which corresponds to typical chemical vapor deposition (CVD)-grown graphene with relatively small Fermi energy. These results shed light on fundamental properties of graphene nanostructures and are helpful in designing graphene metamaterials for applications in infrared sensing, camouflaging, and photodetection, etc.
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Monti A, Raad SH, Atlasbaf Z, Toscano A, Bilotti F. Maximizing the forward scattering of dielectric nanoantennas through surface impedance coatings. OPTICS LETTERS 2022; 47:2386-2389. [PMID: 35561357 DOI: 10.1364/ol.456958] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2022] [Accepted: 04/08/2022] [Indexed: 06/15/2023]
Abstract
In this Letter, we discuss a novel, to the best of our knowledge, approach for designing passive nanoantennas with maximum forward and almost-zero backward scattering. The proposed approach is based on the use of high-index dielectric spheres supporting dipolar magnetic resonances, which are coated by ultra-thin surface impedance coatings. It is shown that, by properly engineering the radius of the coat and its surface reactance, it is possible to introduce an additional electric dipolar resonance and to make this overlap with the magnetic one sustained by the high-index dielectric sphere. A realistic design that is based on graphene and works in the low-THz range is also proposed and verified with full-wave simulations. Compared to earlier techniques based on the combination of multipoles or on the use of ellipsoidal particles, the proposed one is quite robust toward realistic ohmic losses and preserves the isotropic behavior of the nanoantenna.
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Gao Y, Zhai Y, Wang G, Liu F, Duan H, Ding X, Luo S. 3D-Laminated Graphene with Combined Laser Irradiation and Resin Infiltration toward Designable Macrostructure and Multifunction. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200362. [PMID: 35322597 PMCID: PMC9130875 DOI: 10.1002/advs.202200362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Macroscopic 3D graphene has become a significant topic for satisfying the continuously upgraded smart structures and devices. Compared with liquid assembling and catalytic templating methods, laser-induced graphene (LIG) is showing facile and scalable advantages but still faces limited sizes and geometries by using template induction or on-site lay-up strategies. In this work, a new LIG protocol is developed for facile stacking and shaping 3D LIG macrostructures by laminating layers of LIG papers (LIGPs) with combined resin infiltration and hot pressing. Specifically, the constructed 3D LIGP composites (LIGP-C) are compatible with large area, high thickness, and customizable flat or curved shapes. Additionally, systematic research is explored for investigating critical processing parameters on tuning its multifunctional properties. As the laminated layers are stacked from 1 to 10, it is discovered that piezoresistivity (i.e., gauge factor) of LIGP-C dramatically reflects an ≈3900% improvement from 0.39 to 15.7 while mechanical and electrical properties maintain simultaneously at the highest levels, attributed to the formation of densely packed fusion layers. Along with excellent durability for resisting multiple harsh environments, a sensor-array system with 5 × 5 LIGP-C elements is finally demonstrated on fiber-reinforced polymeric composites for accurate strain mapping.
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Affiliation(s)
- Yan Gao
- School of Mechanical Engineering & AutomationBeihang UniversityNo. 37 Xueyuan RoadBeijing100191China
| | - Yujiang Zhai
- School of Mechanical Engineering & AutomationBeihang UniversityNo. 37 Xueyuan RoadBeijing100191China
| | - Guantao Wang
- School of Mechanical Engineering & AutomationBeihang UniversityNo. 37 Xueyuan RoadBeijing100191China
| | - Fu Liu
- School of Mechanical Engineering & AutomationBeihang UniversityNo. 37 Xueyuan RoadBeijing100191China
| | - Haibin Duan
- School of Automation Science and Electrical EngineeringBeihang UniversityNo. 37 Xueyuan RoadBeijing100191China
| | - Xilun Ding
- School of Mechanical Engineering & AutomationBeihang UniversityNo. 37 Xueyuan RoadBeijing100191China
| | - Sida Luo
- School of Mechanical Engineering & AutomationBeihang UniversityNo. 37 Xueyuan RoadBeijing100191China
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2D ternary nitrides XNY (X=Ti, Zr, Hf; Y F, Cl, Br) with applications as photoelectric and photocatalytic materials featuring mechanical and optical anisotropy: A DFT study. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122517] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Fu Y, Wang Y, Yang G, Qiao Q, Liu Y. Tunable reflective dual-band line-to-circular polarization convertor with opposite handedness based on graphene metasurfaces. OPTICS EXPRESS 2021; 29:13373-13387. [PMID: 33985072 DOI: 10.1364/oe.423017] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Accepted: 04/08/2021] [Indexed: 06/12/2023]
Abstract
In this letter, we propose a dual-band tunable reflective linear-to-circular (LTC) polarization converter, which is composed of a graphene sheet etched with an I-shaped carved-hollow array. In the mid-infrared region, two LTC bands with opposite handedness are simultaneously realized due to the excitation of the three graphene surface plasmon (GSP) modes. The band of line-to-right-circular-polarization (LTRCP) ranges from 9.87 to 11.03THz with ellipticity χ <-0.95, and from 9.69 to 11.36 THz with an axial ratio of less than 3 dB; the band of line-to-left-circular-polarization (LTLCP) ranges from 13.16 to 14.43THz with χ >0.95, and from 12.79 to 14.61 THz with an axial ratio of less than 3 dB. The tunable responses of the reflective polarizer with Fermi energy (Ef) and electron scattering time (τ) are discussed, and especially the perfect LTLCP can be changed to LTRCP with increasing Ef. Also, the influences of geometric parameters, incident angle, and polarization angle on the performances of the dual-band LTC are also investigated, and it is found that our polarizer converter shows angle insensitivity. All simulation results are conducted by the finite element method. Our design enriches the research of tunable LTC polarizers and has potential applications in integrated terahertz systems.
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Hrubý J, Vavrečková Š, Masaryk L, Sojka A, Navarro-Giraldo J, Bartoš M, Herchel R, Moncol J, Nemec I, Neugebauer P. Deposition of Tetracoordinate Co(II) Complex with Chalcone Ligands on Graphene. Molecules 2020; 25:E5021. [PMID: 33138227 PMCID: PMC7662825 DOI: 10.3390/molecules25215021] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Revised: 10/26/2020] [Accepted: 10/28/2020] [Indexed: 12/14/2022] Open
Abstract
Studying the properties of complex molecules on surfaces is still mostly an unexplored research area because the deposition of the metal complexes has many pitfalls. Herein, we probed the possibility to produce surface hybrids by depositing a Co(II)-based complex with chalcone ligands on chemical vapor deposition (CVD)-grown graphene by a wet-chemistry approach and by thermal sublimation under high vacuum. Samples were characterized by high-frequency electron spin resonance (HF-ESR), XPS, Raman spectroscopy, atomic force microscopy (AFM), and optical microscopy, supported with density functional theory (DFT) and complete active space self-consistent field (CASSCF)/N-electron valence second-order perturbation theory (NEVPT2) calculations. This compound's rationale is its structure, with several aromatic rings for weak binding and possible favorable π-π stacking onto graphene. In contrast to expectations, we observed the formation of nanodroplets on graphene for a drop-cast sample and microcrystallites localized at grain boundaries and defects after thermal sublimation.
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Affiliation(s)
- Jakub Hrubý
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic; (J.H.); (S.V.); (A.S.); (J.N.-G.); (M.B.); (I.N.)
| | - Šárka Vavrečková
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic; (J.H.); (S.V.); (A.S.); (J.N.-G.); (M.B.); (I.N.)
- Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2, 61669 Brno, Czech Republic
| | - Lukáš Masaryk
- Department of Inorganic Chemistry, Faculty of Science, Palacký University, 17. listopadu 12, 77147 Olomouc, Czech Republic; (L.M.); (R.H.)
| | - Antonín Sojka
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic; (J.H.); (S.V.); (A.S.); (J.N.-G.); (M.B.); (I.N.)
| | - Jorge Navarro-Giraldo
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic; (J.H.); (S.V.); (A.S.); (J.N.-G.); (M.B.); (I.N.)
| | - Miroslav Bartoš
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic; (J.H.); (S.V.); (A.S.); (J.N.-G.); (M.B.); (I.N.)
| | - Radovan Herchel
- Department of Inorganic Chemistry, Faculty of Science, Palacký University, 17. listopadu 12, 77147 Olomouc, Czech Republic; (L.M.); (R.H.)
| | - Ján Moncol
- Department of Inorganic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology in Bratislava, 81237 Bratislava, Slovakia;
| | - Ivan Nemec
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic; (J.H.); (S.V.); (A.S.); (J.N.-G.); (M.B.); (I.N.)
- Department of Inorganic Chemistry, Faculty of Science, Palacký University, 17. listopadu 12, 77147 Olomouc, Czech Republic; (L.M.); (R.H.)
| | - Petr Neugebauer
- Central European Institute of Technology, CEITEC BUT, Purkyňova 656/123, 61200 Brno, Czech Republic; (J.H.); (S.V.); (A.S.); (J.N.-G.); (M.B.); (I.N.)
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Khatami MM, Gaddemane G, Van de Put ML, Moravvej-Farshi MK, Vandenberghe WG. Electronic transport properties of hydrogenated and fluorinated graphene: a computational study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:495502. [PMID: 32955019 DOI: 10.1088/1361-648x/abb2f6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Hydrogenation and fluorination have been presented as two possible methods to open a bandgap in graphene, required for field-effect transistor applications. In this work, we present a detailed study of the phonon-limited mobility of electrons and holes in hydrogenated graphene (graphane) and fluorinated graphene (graphene fluoride). We pay special attention to the out-of-plane acoustic (ZA) phonons, responsible for the highest scattering rates in graphane and graphene fluoride. Considering the most adverse cut-off for long-wavelength ZA phonons, we have obtained electron (hole) mobilities of 28 (41) cm2 V-1 s-1 for graphane and 96 (30) cm2 V-1 s-1 for graphene fluoride. Nonetheless, for a more favorable cut-off wavelength of ∼2.6 nm, significantly higher electron (hole) mobilities of 233 (389) cm2 V-1 s-1 for graphane and 460 (105) cm2 V-1 s-1 for graphene fluoride are achieved. Moreover, while complete suppression of ZA phonons can increase the electron (hole) mobility in graphane up to 278 (391) cm2 V-1 s-1, it does not affect the carrier mobilities in graphene fluoride. Velocity-field characteristics reveal that the electron velocity in graphane saturates at an electric field of ∼4 × 105 V cm-1. Comparing the mobilities with other two-dimensional (2D) semiconductors, we find that hydrogenation and fluorination are two promising avenues to realize a 2D semiconductor while providing good carrier mobilities.
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Affiliation(s)
- Mohammad Mahdi Khatami
- Faculty of Electrical and Computer Engineering, PO Box 14115-194, Tarbiat Modares University, Tehran 1411713116, Iran
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Qin X, Liu Y, Yang G, Zhao D. Mirror symmetry origin of Dirac cone formation in rectangular two-dimensional materials. Phys Chem Chem Phys 2020; 22:6619-6625. [PMID: 32159548 DOI: 10.1039/d0cp00244e] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
The Dirac cone (DC) band structure of graphene was thought to be unique to the hexagonal symmetry of its honeycomb lattice. However, two-dimensional (2D) materials possessing rectangular unit cells, e.g. unitary 6,6,12-graphyne and binary t1/t2-SiC, were also found to have DC band features. In this work, a "mirror symmetry parity coupling (MSPC)" mechanism is proposed to elaborate on the DC formation process of 6,6,12-graphyne with the tight-binding method combined with density functional calculations. First, atoms of unit cells are divided into two groups, each of which possesses its own mirror symmetry. Second, wave atom functions within each group are combined into two sets of normalized orthogonal wave functions with an odd and even parity symmetry, respectively, followed by couplings among intragroups and intergroups. The MSPC mechanism, in general, can explain the origins of the DC band structures of a category of 2D materials possessing mirror symmetry and rectangular or hexagonal unit cells. The important role of symmetry analysis, especially mirror symmetry, in understanding DC formation is demonstrated, which may serve as a critical design criterion for novel DC materials.
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Affiliation(s)
- Xuming Qin
- School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, P. R. China.
| | - Yi Liu
- Materials Genome Institute, Shanghai University, 333 Nanchen Road, Shanghai 200444, P. R. China.
| | - Gui Yang
- School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, P. R. China.
| | - Dongqiu Zhao
- School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, P. R. China.
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11
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Cea T, Walet NR, Guinea F. Twists and the Electronic Structure of Graphitic Materials. NANO LETTERS 2019; 19:8683-8689. [PMID: 31743649 DOI: 10.1021/acs.nanolett.9b03335] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We analyze the effect of twists on the electronic structure of configurations of infinite stacks of graphene layers. We focus on three different cases: an infinite stack where each layer is rotated with respect to the previous one by a fixed angle, two pieces of semi-infinite graphite rotated with respect to each other, and finally a single layer of graphene rotated with respect to a graphite surface. In all three cases, we find a rich structure, with sharp resonances and flat bands for small twist angles. The method used can be easily generalized to more complex arrangements and stacking sequences.
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Affiliation(s)
- Tommaso Cea
- Imdea Nanoscience , Faraday 9 , 28015 Madrid , Spain
| | - Niels R Walet
- School of Physics and Astronomy , University of Manchester , Manchester , M13 9PY , U.K
| | - Francisco Guinea
- Imdea Nanoscience , Faraday 9 , 28015 Madrid , Spain
- School of Physics and Astronomy , University of Manchester , Manchester , M13 9PY , U.K
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12
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Khatami MM, Gaddemane G, Van de Put ML, Fischetti MV, Moravvej-Farshi MK, Pourfath M, Vandenberghe WG. Electronic Transport Properties of Silicane Determined from First Principles. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E2935. [PMID: 31514338 PMCID: PMC6766188 DOI: 10.3390/ma12182935] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2019] [Revised: 09/02/2019] [Accepted: 09/06/2019] [Indexed: 11/16/2022]
Abstract
Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes in silicane from first principles, relying on density functional theory. Transport calculations were performed using a full-band Monte Carlo scheme. Scattering rates were determined from interpolated electron-phonon matrix elements determined from density functional perturbation theory. We found that the main source of scattering for electrons and holes was the ZA phonons. Different cut-off wavelengths ranging from 0.58 nm to 16 nm were used to study the possible suppression of the out-of-plane acoustic (ZA) phonons. The low-field mobility of electrons (holes) was obtained as 5 (10) cm2/(Vs) with a long wavelength ZA phonon cut-off of 16 nm. We showed that higher electron (hole) mobilities of 24 (101) cm2/(Vs) can be achieved with a cut-off wavelength of 4 nm, while completely suppressing ZA phonons results in an even higher electron (hole) mobility of 53 (109) cm2/(Vs). Velocity-field characteristics showed velocity saturation at 3 × 105 V/cm, and negative differential mobility was observed at larger fields. The silicane mobility was competitive with other two-dimensional materials, such as transition-metal dichalcogenides or phosphorene, predicted using similar full-band Monte Carlo calculations. Therefore, silicon in its most extremely scaled form remains a competitive material for future nanoscale transistor technology, provided scattering with out-of-plane acoustic phonons could be suppressed.
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Affiliation(s)
- Mohammad Mahdi Khatami
- Department of Material science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
- Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran 1411713116, Iran.
| | - Gautam Gaddemane
- Department of Material science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
| | - Maarten L Van de Put
- Department of Material science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
| | - Massimo V Fischetti
- Department of Material science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
| | | | - Mahdi Pourfath
- School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515, Iran.
| | - William G Vandenberghe
- Department of Material science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
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13
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Hrubý J, Santana VT, Kostiuk D, Bouček M, Lenz S, Kern M, Šiffalovič P, van Slageren J, Neugebauer P. A graphene-based hybrid material with quantum bits prepared by the double Langmuir-Schaefer method. RSC Adv 2019; 9:24066-24073. [PMID: 35527863 PMCID: PMC9069494 DOI: 10.1039/c9ra04537f] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2019] [Accepted: 07/25/2019] [Indexed: 11/21/2022] Open
Abstract
The scalability and stability of molecular qubits deposited on surfaces is a crucial step for incorporating them into upcoming electronic devices. Herein, we report on the preparation and characterisation of a molecular quantum bit, copper(ii)dibenzoylmethane [Cu(dbm)2], deposited by a modified Langmuir-Schaefer (LS) technique onto a graphene-based substrate. A double LS deposition was used for the preparation of a few-layer-graphene (FLG) on a Si/SiO2 substrate with subsequent deposition of the molecules. Magnetic properties were probed by high-frequency electron spin resonance (HF-ESR) spectroscopy and found maintained after deposition. Additional spectroscopic and imaging techniques, such as Raman spectroscopy (RS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were performed to characterise the deposited sample. Our approach demonstrated the possibility to utilise a controlled wet-chemistry protocol to prepare an array of potential quantum bits on a disordered graphene-based substrate. The deployed spectroscopic techniques showed unambiguously the robustness of our studied system with a potential to fabricate large-scale, intact, and stable quantum bits.
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Affiliation(s)
- Jakub Hrubý
- Central European Institute of Technology, CEITEC BUT Purkyňova 656/123 61200 Brno Czech Republic
| | - Vinicius T Santana
- Central European Institute of Technology, CEITEC BUT Purkyňova 656/123 61200 Brno Czech Republic
| | - Dmytro Kostiuk
- Institute of Physics, Slovak Academy of Sciences Dúbravská cesta 9 84511 Bratislava Slovakia
| | - Martin Bouček
- Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology Technická 2 61669 Brno Czech Republic
| | - Samuel Lenz
- Institute of Physical Chemistry, University of Stuttgart Pfaffenwaldring 55 70569 Stuttgart Germany
| | - Michal Kern
- Institute of Physical Chemistry, University of Stuttgart Pfaffenwaldring 55 70569 Stuttgart Germany
| | - Peter Šiffalovič
- Institute of Physics, Slovak Academy of Sciences Dúbravská cesta 9 84511 Bratislava Slovakia
| | - Joris van Slageren
- Institute of Physical Chemistry, University of Stuttgart Pfaffenwaldring 55 70569 Stuttgart Germany
| | - Petr Neugebauer
- Central European Institute of Technology, CEITEC BUT Purkyňova 656/123 61200 Brno Czech Republic
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14
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Yao Z, Wei T, Wang Y, Lu M, Zhang C, Zhang L. Tunable multifunctional reflection polarizer based on a graphene metasurface. APPLIED OPTICS 2019; 58:3570-3574. [PMID: 31044856 DOI: 10.1364/ao.58.003570] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2019] [Accepted: 04/04/2019] [Indexed: 06/09/2023]
Abstract
Herein, we present a tunable multifunctional reflection polarizer, based on a graphene metasurface, which is composed of an array of cross double-ellipse graphene patches. A dual band of linear-to-linear (LTL) polarization conversions is achieved due to the superimposition of the two reflection components with a near 0° or 180° phase difference, in the mid-infrared region. By carefully choosing the parameters, linear-to-circular polarization conversion and broadband of LTL polarization conversion (about 0.7 THz) are also realized. Also, the tunable responses of the proposed reflection polarizer are discussed under a different Fermi energy and electron scattering time. It is believed that our proposed polarizer can be widely used for multifunctional and tunable polarization conversion.
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15
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Elloh VW, Yaya A, Gebreyesus G, Dua P, Mishra AK. New 2D Structural Materials: Carbon-Gallium Nitride (CC-GaN) and Boron-Gallium Nitride (BN-GaN) Heterostructures-Materials Design Through Density Functional Theory. ACS OMEGA 2019; 4:1722-1728. [PMID: 31459429 PMCID: PMC6647944 DOI: 10.1021/acsomega.8b03025] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2018] [Accepted: 12/26/2018] [Indexed: 06/10/2023]
Abstract
New class of ternary nanohetrostructures have been proposed by mixing 2D gallium nitride (GaN) with graphene and 2D hexagonal boron nitride (BN) with an aim towards desgining innovative 2D materials for applications in electronics and other industries. The structural stability and electronic properties of these nanoheterostructures have been analyzed using first-principles based calculations done in the framework of density functional theory. Different structure patterns have been analyzed to identify the most stable structures. It is found to be more energetically favorable that the carbon atoms occupy the positions of the nitrogen atoms in a clustered pattern in CC-GaN heterostructures, whereas boron doping is preferred in the reverse order, where isolated BN and GaN layered configurations are preferred in BN-GaN heterostructures. These 2D nanoheterostructures are energetically favored materials with direct band gap and have potential application in nanoscale semiconducting and nanoscale optoelectronic devices.
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Affiliation(s)
- Van W. Elloh
- Department
of Physics, School of Engineering, University
of Petroleum and Energy Studies (UPES), Bidholi via Premnagar, Dehradun 248007, India
- Department of Materials Science
and Engineering and Department of Physics, University of Ghana, P.O. Box LG 25, Legon, Ghana
| | - Abu Yaya
- Department of Materials Science
and Engineering and Department of Physics, University of Ghana, P.O. Box LG 25, Legon, Ghana
| | - G. Gebreyesus
- Department of Materials Science
and Engineering and Department of Physics, University of Ghana, P.O. Box LG 25, Legon, Ghana
| | - Piyush Dua
- Department
of Physics, School of Engineering, University
of Petroleum and Energy Studies (UPES), Bidholi via Premnagar, Dehradun 248007, India
| | - Abhishek K. Mishra
- Department
of Physics, School of Engineering, University
of Petroleum and Energy Studies (UPES), Bidholi via Premnagar, Dehradun 248007, India
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16
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Shi W, Wu G, Yong X, Deng T, Wang JS, Zheng JC, Xu J, Sullivan MB, Yang SW. Orbital-Engineering-Based Screening of π-Conjugated d 8 Transition-Metal Coordination Polymers for High-Performance n-Type Thermoelectric Applications. ACS APPLIED MATERIALS & INTERFACES 2018; 10:35306-35315. [PMID: 30251818 DOI: 10.1021/acsami.8b13877] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Extraordinary progress has been achieved in polymer-based thermoelectric materials in recent years. New emerging π-conjugated transition-metal coordination polymers are one of the best n-type polymer-based thermoelectric materials. However, the microscopic descriptions on geometric structures, orbital characteristics, and most importantly, thermoelectric properties remain elusive, which has seriously hampered the experimentalists to draw a straightforward design strategy for new n-type polymer-based thermoelectric materials. Herein, we assess the n-type thermoelectric properties of 20 π-conjugated d8 metal center coordination polymers and rationalize their thermoelectric properties in terms of molecular geometry, orbital nature, and electron-phonon coupling based on first-principles calculations. An explicit screening rule for high-performance n-type π-conjugated transition-metal coordination polymeric thermoelectric materials was found, i.e., smaller metal center d orbital component ratio in the conduction band minimum, weaker electron-phonon coupling, higher intrinsic mobility, and thereby higher thermoelectric power factor can be achieved. Guided by this rule, poly(Pd-C2S4) and poly(Ni-C2Se4) show very high power factors. We built a map of high-performance π-conjugated transition-metal coordination polymers for n-type thermoelectric applications, which will help to accelerate the screening and design of innovative n-type thermoelectric polymers.
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Affiliation(s)
- Wen Shi
- Institute of High Performance Computing , Agency for Science, Technology and Research , 1 Fusionopolis Way, #16-16 Connexis , Singapore 138632 , Singapore
| | - Gang Wu
- Institute of High Performance Computing , Agency for Science, Technology and Research , 1 Fusionopolis Way, #16-16 Connexis , Singapore 138632 , Singapore
| | - Xue Yong
- Institute of High Performance Computing , Agency for Science, Technology and Research , 1 Fusionopolis Way, #16-16 Connexis , Singapore 138632 , Singapore
| | - Tianqi Deng
- Institute of High Performance Computing , Agency for Science, Technology and Research , 1 Fusionopolis Way, #16-16 Connexis , Singapore 138632 , Singapore
| | - Jian-Sheng Wang
- Department of Physics , National University of Singapore , Singapore 117551 , Singapore
| | - Jin-Cheng Zheng
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices , Xiamen University , Xiamen 361005 , China
| | - Jianwei Xu
- Institute of Materials Research and Engineering , Agency for Science, Technology and Research , 2 Fusionopolis Way, #08-03 Innovis , Singapore 138634 , Singapore
| | - Michael B Sullivan
- Institute of High Performance Computing , Agency for Science, Technology and Research , 1 Fusionopolis Way, #16-16 Connexis , Singapore 138632 , Singapore
| | - Shuo-Wang Yang
- Institute of High Performance Computing , Agency for Science, Technology and Research , 1 Fusionopolis Way, #16-16 Connexis , Singapore 138632 , Singapore
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17
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Yadav VS, Ghosh SK, Bhattacharyya S, Das S. Graphene-based metasurface for a tunable broadband terahertz cross-polarization converter over a wide angle of incidence. APPLIED OPTICS 2018; 57:8720-8726. [PMID: 30461951 DOI: 10.1364/ao.57.008720] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2018] [Accepted: 09/09/2018] [Indexed: 06/09/2023]
Abstract
In this paper, using a graphene-based metasurface, we demonstrate a unique design to develop a highly efficient, broadband, mid-infrared cross-polarization converter. The proposed graphene-based metasurface structure comprises periodical ϕ-shaped graphene on the top surface of a noble-metal-backed dielectric silicon dioxide (SiO2). The reported structure converts the incident linearly polarized wave into cross-polarized components with a peak polarization conversion ratio of more than 0.9 over a large band. Furthermore, the metasurface structure exhibits the full width at half-maximum bandwidth of 41.98% with respect to its center frequency of 5.98 THz. The physical insights behind electromagnetic polarization conversion are supported by field distributions and retrieved electromagnetic parameters. The structure works as a broadband cross-polarization converter up to 40° incident angle for both TE and TM polarizations. In addition, the structure is found to be as thin as ∼λ/6 with respect to lowermost frequency of the polarization conversion. The period of the unit cell is ∼λ/24 to support the fact that the structure can be treated as a metasurface.
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18
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Neugebauer P, Bloos D, Marx R, Lutz P, Kern M, Aguilà D, Vaverka J, Laguta O, Dietrich C, Clérac R, van Slageren J. Ultra-broadband EPR spectroscopy in field and frequency domains. Phys Chem Chem Phys 2018; 20:15528-15534. [DOI: 10.1039/c7cp07443c] [Citation(s) in RCA: 38] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Electron paramagnetic resonance (EPR) is a powerful technique to investigate the electronic and magnetic properties of a wide range of materials.
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19
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Lee H, Kim K, Kang SH, Kwon Y, Kim JH, Kwon YK, Ryoo R, Park JY. Extremely high electrical conductance of microporous 3D graphene-like zeolite-templated carbon framework. Sci Rep 2017; 7:11460. [PMID: 28904356 PMCID: PMC5597609 DOI: 10.1038/s41598-017-11602-5] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2017] [Accepted: 08/23/2017] [Indexed: 11/28/2022] Open
Abstract
We report the remarkably high electrical conductance of microporous 3D graphene-like carbons that were formed using lanthanum (La)-catalyzed synthesis in a Y zeolite (LaY) template investigated using conductive atomic force microscopy (C-AFM) and theoretical calculations. To uncover the relation between local electrical conductance and the microporous structures, we tuned the crystallographic ordering of LaY-templated carbon systems by changing the heating temperature. The structure of the LaY-templated carbon prepared at the higher temperature has graphene-like sp2 hybridized bonds, which was confirmed using high-resolution transmission electron microscopy and X-ray diffraction measurements. C-AFM current–voltage spectroscopy revealed that the local current flow in the LaY-templated carbon depends on the quantity of C–C bonds within the narrow neck between the closed supercages (i.e. there are three types of carbon: carbon with heat treatment, carbon without heat treatment, and carbon synthesized at low temperature). The difference in electrical conductance on the LaY-templated carbon was also confirmed via theoretical computation using the Boltzmann transport theory and the deformation potential theory based on the density functional theory. These results suggest that the degree of order of the pores in the 3D zeolite-templated carbon structures is directly related to electrical conductance.
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Affiliation(s)
- Hyunsoo Lee
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 34141, South Korea
| | - Kyoungsoo Kim
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 34141, South Korea.,Department of Chemistry, Chonbuk National University, Jeonju, Jeollabuk-do, 54896, South Korea
| | - Seoung-Hun Kang
- Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul, 02447, South Korea.,Korea Institute for Advanced Study, Seoul, 02455, South Korea
| | - Yonghyun Kwon
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 34141, South Korea.,Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Jong Hun Kim
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 34141, South Korea.,Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea
| | - Young-Kyun Kwon
- Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul, 02447, South Korea. .,Korea Institute for Advanced Study, Seoul, 02455, South Korea.
| | - Ryong Ryoo
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 34141, South Korea. .,Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
| | - Jeong Young Park
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 34141, South Korea. .,Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
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20
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Qin X, Wu Y, Liu Y, Chi B, Li X, Wang Y, Zhao X. Origins of Dirac cone formation in AB 3 and A 3B (A, B = C, Si, and Ge) binary monolayers. Sci Rep 2017; 7:10546. [PMID: 28874708 PMCID: PMC5585377 DOI: 10.1038/s41598-017-10670-x] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2017] [Accepted: 08/11/2017] [Indexed: 11/25/2022] Open
Abstract
Compared to the pure two-dimensional (2D) graphene and silicene, the binary 2D system silagraphenes, consisting of both C and Si atoms, possess more diverse electronic structures depending on their various chemical stoichiometry and arrangement pattern of binary components. By performing calculations with both density functional theory and a Tight-binding model, we elucidated the formation of Dirac cone (DC) band structures in SiC3 and Si3C as well as their analogous binary monolayers including SiGe3, Si3Ge, GeC3, and Ge3C. A “ring coupling” mechanism, referring to the couplings among the six ring atoms, was proposed to explain the origin of DCs in AB3 and A3B binary systems, based on which we discussed the methods tuning the SiC3 systems into self-doped systems. The first-principles quantum transport calculations by non-equilibrium Green’s function method combined with density functional theory showed that the electron conductance of SiC3 and Si3C lie between those of graphene and silicene, proportional to the carbon concentrations. Understanding the DC formation mechanism and electronic properties sheds light onto the design principles for novel Fermi Dirac systems used in nanoelectronic devices.
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Affiliation(s)
- Xuming Qin
- Department of Physics, Materials Genome Institute, and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai, 200444, P.R. China.,Department of Materials Physics and Chemistry, School of Materials Science and Engineering, and Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, No. 3-11 Wenhua Road, Shenyang, 110819, P.R. China
| | - Yuqin Wu
- Department of Physics, Materials Genome Institute, and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai, 200444, P.R. China
| | - Yi Liu
- Department of Physics, Materials Genome Institute, and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai, 200444, P.R. China.
| | - Baoqian Chi
- Department of Physics, Materials Genome Institute, and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai, 200444, P.R. China.,Department of Materials Physics and Chemistry, School of Materials Science and Engineering, and Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, No. 3-11 Wenhua Road, Shenyang, 110819, P.R. China
| | - Xiaowu Li
- Department of Materials Physics and Chemistry, School of Materials Science and Engineering, and Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, No. 3-11 Wenhua Road, Shenyang, 110819, P.R. China.
| | - Yin Wang
- Department of Physics, Materials Genome Institute, and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai, 200444, P.R. China
| | - Xinluo Zhao
- Department of Physics, Materials Genome Institute, and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai, 200444, P.R. China
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21
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Nasari H, Abrishamian MS. Terahertz bistability and multistability in graphene/dielectric Fibonacci multilayer. APPLIED OPTICS 2017; 56:5313-5322. [PMID: 29047485 DOI: 10.1364/ao.56.005313] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2017] [Accepted: 05/26/2017] [Indexed: 06/07/2023]
Abstract
Here, we benefit from the strong nonlinear response of graphene and the rich variety of resonances provided by a graphene/dielectric Fibonacci multilayer to realize bistability and multistability in the terahertz (THz) frequency range. Toward this pursuit, we employ the nonlinear transfer matrix method. We examine the suitability of resonances in the Fibonacci multilayer for the bi/multistability purposes and determine the proper working point. We report various switching up/down manners via single or stepwise jumps between states of the same or different contrasts upon increasing followed by decreasing the intensity of the incident wave. We show that graphene samples of high quality are preferred for bi/multistable switching in terms of reducing the switch-up/-down thresholds and widening the multistable region. We also explore the possibility of tuning the bi/multistable behavior via the frequency and angle of the incident wave as well as the graphene Fermi level. We envision precious applications in THz switching, realizing logic gates, and so on for this system.
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22
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König-Otto JC, Wang Y, Belyanin A, Berger C, de Heer WA, Orlita M, Pashkin A, Schneider H, Helm M, Winnerl S. Four-Wave Mixing in Landau-Quantized Graphene. NANO LETTERS 2017; 17:2184-2188. [PMID: 28234493 DOI: 10.1021/acs.nanolett.6b04665] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
For Landau-quantized graphene, featuring an energy spectrum consisting of nonequidistant Landau levels, theory predicts a giant resonantly enhanced optical nonlinearity. We verify the nonlinearity in a time-integrated degenerate four-wave mixing (FWM) experiment in the mid-infrared spectral range, involving the Landau levels LL-1, LL0 and LL1. A rapid dephasing of the optically induced microscopic polarization on a time scale shorter than the pulse duration (∼4 ps) is observed, while a complementary pump-probe experiment under the same experimental conditions reveals a much longer lifetime of the induced population. The FWM signal shows the expected field dependence with respect to lowest order perturbation theory for low fields. Saturation sets in for fields above ∼6 kV/cm. Furthermore, the resonant behavior and the order of magnitude of the third-order susceptibility are in agreement with our theoretical calculations.
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Affiliation(s)
- Jacob C König-Otto
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
- Technische Universität Dresden , 01062 Dresden, Germany
| | - Yongrui Wang
- Texas A&M University , College Station, Texas 77843-4242, United States
| | - Alexey Belyanin
- Texas A&M University , College Station, Texas 77843-4242, United States
| | - Claire Berger
- Georgia Institute of Technology , Atlanta, Georgia 30332, United States
- Institut Néel, CNRS-Université Alpes , 38042 Grenoble, France
| | - Walter A de Heer
- Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Milan Orlita
- LNCMI, CNRS-UGA-UPS-INSA , 38042 Grenoble, France
- Institute of Physics, Charles University in Prague , 12116 Prague, Czech Republic
| | - Alexej Pashkin
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
| | - Harald Schneider
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
- Technische Universität Dresden , 01062 Dresden, Germany
| | - Stephan Winnerl
- Helmholtz-Zentrum Dresden-Rossendorf , P.O. Box 510119, 01314 Dresden, Germany
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23
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Microwave Study of Field-Effect Devices Based on Graphene/Aluminum Nitride/Graphene Structures. Sci Rep 2017; 7:44202. [PMID: 28276517 PMCID: PMC5343569 DOI: 10.1038/srep44202] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2016] [Accepted: 02/06/2017] [Indexed: 11/29/2022] Open
Abstract
Metallic gate electrodes are often employed to control the conductivity of graphene based field effect devices. The lack of transparency of such electrodes in many optical applications is a key limiting factor. We demonstrate a working concept of a double layer graphene field effect device that utilizes a thin film of sputtered aluminum nitride as dielectric gate material. For this system, we show that the graphene resistance can be modified by a voltage between the two graphene layers. We study how a second gate voltage applied to the silicon back gate modifies the measured microwave transport data at around 8.7 GHz. As confirmed by numerical simulations based on the Boltzmann equation, this system resembles a parallel circuit of two graphene layers with different intrinsic doping levels. The obtained experimental results indicate that the graphene-aluminum nitride-graphene device concept presents a promising technology platform for terahertz- to- optical devices as well as radio-frequency acoustic devices where piezoelectricity in aluminum nitride can also be exploited.
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24
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Akrap A, Hakl M, Tchoumakov S, Crassee I, Kuba J, Goerbig MO, Homes CC, Caha O, Novák J, Teppe F, Desrat W, Koohpayeh S, Wu L, Armitage NP, Nateprov A, Arushanov E, Gibson QD, Cava RJ, van der Marel D, Piot BA, Faugeras C, Martinez G, Potemski M, Orlita M. Magneto-Optical Signature of Massless Kane Electrons in Cd_{3}As_{2}. PHYSICAL REVIEW LETTERS 2016; 117:136401. [PMID: 27715109 DOI: 10.1103/physrevlett.117.136401] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2016] [Indexed: 06/06/2023]
Abstract
We report on optical reflectivity experiments performed on Cd_{3}As_{2} over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles. The latter may appear at a smaller energy scale and are not directly observed in our infrared experiments.
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Affiliation(s)
- A Akrap
- DQMP, University of Geneva, CH-1211 Geneva 4, Switzerland
| | - M Hakl
- LNCMI, CNRS-UGA-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France
| | - S Tchoumakov
- LPS, Université Paris-Sud, Université Paris-Saclay, CNRS UMR 8502, 91405 Orsay, France
| | - I Crassee
- GAP-Biophotonics, University of Geneva, CH-1211 Geneva 4, Switzerland
| | - J Kuba
- LNCMI, CNRS-UGA-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France
- CEITEC BUT, Brno University of Technology, 616 00 Brno, Czech Republic
| | - M O Goerbig
- LPS, Université Paris-Sud, Université Paris-Saclay, CNRS UMR 8502, 91405 Orsay, France
| | - C C Homes
- CMPMS, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - O Caha
- CEITEC MU, Masaryk University, Faculty of Science, 61137 Brno, Czech Republic
| | - J Novák
- CEITEC MU, Masaryk University, Faculty of Science, 61137 Brno, Czech Republic
| | - F Teppe
- Laboratoire Charles Coulomb, CNRS, Université Montpellier, 34095 Montpellier, France
| | - W Desrat
- Laboratoire Charles Coulomb, CNRS, Université Montpellier, 34095 Montpellier, France
| | - S Koohpayeh
- The Institute for Quantum Matter, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - L Wu
- The Institute for Quantum Matter, The Johns Hopkins University, Baltimore, Maryland 21218, USA
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - N P Armitage
- The Institute for Quantum Matter, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - A Nateprov
- Institute of Applied Physics, Academy of Sciences of Moldova, MD-2028 Chisinau, Moldova
| | - E Arushanov
- Institute of Applied Physics, Academy of Sciences of Moldova, MD-2028 Chisinau, Moldova
| | - Q D Gibson
- Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA
| | - R J Cava
- Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA
| | | | - B A Piot
- LNCMI, CNRS-UGA-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France
| | - C Faugeras
- LNCMI, CNRS-UGA-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France
| | - G Martinez
- LNCMI, CNRS-UGA-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France
| | - M Potemski
- LNCMI, CNRS-UGA-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France
| | - M Orlita
- LNCMI, CNRS-UGA-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble, France
- Institute of Physics, Charles University in Prague, 12116 Prague, Czech Republic
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25
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Qin X, Liu Y, Chi B, Zhao X, Li X. Origins of Dirac cones and parity dependent electronic structures of α-graphyne derivatives and silagraphynes. NANOSCALE 2016; 8:15223-15232. [PMID: 27485886 DOI: 10.1039/c6nr03603a] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Compared with graphene, graphyne and its derivatives possess more diversified atomic configurations and richer electronic structures including Dirac cones (DCs) and metallic features depending on the parity of the number of sp carbon atoms of graphynes. This report described conceptually the process of DC formation of α-graphyne within a tight-binding framework parameterized from density functional calculations. We propose a "triple coupling" mechanism elucidating the DC formation and some flat bands of α-graphynes where the couplings among the three sp carbon chain atoms are critical. The extension of this mechanism further explains the origins of DCs of silagraphynes and the parity dependent electronic structures of α-graphyne derivatives with extended sp carbon chains. Understanding these origins helps in tuning electronic properties in the design of C or C-Si based nanoelectronic devices.
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Affiliation(s)
- Xuming Qin
- Department of Materials Physics and Chemistry, School of Materials Science and Engineering, and Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, No. 3-11 Wenhua Road, Shenyang 110819, P. R. China. and Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China
| | - Yi Liu
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China and Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China.
| | - Baoqian Chi
- Department of Materials Physics and Chemistry, School of Materials Science and Engineering, and Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, No. 3-11 Wenhua Road, Shenyang 110819, P. R. China. and Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China
| | - Xinluo Zhao
- Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China
| | - Xiaowu Li
- Department of Materials Physics and Chemistry, School of Materials Science and Engineering, and Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, No. 3-11 Wenhua Road, Shenyang 110819, P. R. China.
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Nasari H, Abrishamian MS. Nonlinear terahertz frequency conversion via graphene microribbon array. NANOTECHNOLOGY 2016; 27:305202. [PMID: 27306039 DOI: 10.1088/0957-4484/27/30/305202] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
By exploiting the interesting trait of graphene to have electrically tunable first- and third-order conductivities besides its capability to support plasmonic resonances at terahertz frequencies, here, through the nonlinear finite-difference time-domain numerical technique we developed, we demonstrate a noticeable improvement in the conversion efficiency of third-harmonic generation (THG) from a graphene microribbon array by more than five orders of magnitude compared to an infinite graphene sheet, under normal illumination of terahertz waves. As the Fermi level and period length of the ribbon array increase, the transmission obviously manifests a blue shift but denotes a red shift with an increase in ribbon width. The quality factor of resonance (and so the THG efficiency) also shows improvement with an increase in graphene Fermi level, carrier mobility and period length and is degraded by an increase in ribbon width. Generating new frequencies, terahertz signal processing, spectroscopy and so on are among the plethora of valuable potential applications envisioned to be developed based on the findings reported here.
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Affiliation(s)
- H Nasari
- Department of Electrical Engineering, K. N. Toosi University of Technology, Tehran, 141371419, Iran
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27
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Yang C, Luo Y, Guo J, Pu Y, He D, Jiang Y, Xu J, Liu Z. Wideband tunable mid-infrared cross polarization converter using rectangle-shape perforated graphene. OPTICS EXPRESS 2016; 24:16913-16922. [PMID: 27464143 DOI: 10.1364/oe.24.016913] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The strong plasmonic response and wide electrostatic tunability of graphene make it a promising material for developing infrared optoelectronic components. In this paper, we present a mid-infrared wideband tunable cross polarization converter using periodically perforated graphene. The polarization converter consists of a metal ground plane, an insulator layer, and a rectangle-shape periodically perforated graphene sheet. By superimposing two localized surface plasmon modes, the polarization converter transforms a linear polarization to its cross polarization over a bandwidth as wide as ~5% of the central frequency (46.8THz) with a peak conversion ratio exceeding 90%. The polarization conversion performance is maintained over a wide range of incident angles up to 50°, and is highly tunable by electrostatic tuning of the graphene Fermi energy. Our proposed device enables the manipulation of light polarization for potential mid-infrared applications.
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Abstract
One-atom-thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. To realize their potential it is necessary to isolate them from environmental disturbances, in particular those introduced by the substrate. However, finding and characterizing suitable substrates, and minimizing the random potential fluctuations they introduce, has been a persistent challenge in this emerging field. Here we show that Landau-level (LL) spectroscopy offers the unique capability to quantify both the reduction of the quasiparticles' lifetime and the long-range inhomogeneity due to random potential fluctuations. Harnessing this technique together with direct scanning tunneling microscopy and numerical simulations we demonstrate that the insertion of a graphene buffer layer with a large twist angle is a very effective method to shield a 2D system from substrate interference that has the additional desirable property of preserving the electronic structure of the system under study. We further show that owing to its remarkable nonlinear screening capability a single graphene buffer layer provides better shielding than either increasing the distance to the substrate or doubling the carrier density and reduces the amplitude of the potential fluctuations in graphene to values even lower than the ones in AB-stacked bilayer graphene.
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29
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Kou Y, Förstner J. Discrete plasmonic solitons in graphene-coated nanowire arrays. OPTICS EXPRESS 2016; 24:4714-4721. [PMID: 29092300 DOI: 10.1364/oe.24.004714] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We study the discrete soliton formation in one- and two-dimensional arrays of nanowires coated with graphene monolayers. Highly confined solitons, including the fundamental and the higher-order modes, are found to be supported by the proposed structure with a low level of power flow. Numerical analysis reveals that, by tuning the input intensity and Fermi energy, the beam diffraction, soliton dimension and propagation loss can be fully controlled in a broad range, indicating potential values of the graphene-based solitons in nonlinear/active nanophotonic systems.
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30
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Xu Y, Dai J, Zeng XC. Al2C Monolayer Sheet and Nanoribbons with Unique Direction-Dependent Acoustic-Phonon-Limited Carrier Mobility and Carrier Polarity. J Phys Chem Lett 2016; 7:302-307. [PMID: 26722716 DOI: 10.1021/acs.jpclett.5b02695] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The intrinsic acoustic-phonon-limited carrier mobility (μ) of Al2C monolayer sheet and nanoribbons are investigated using ab initio computation and deformation potential theory. It is found that the polarity of the room-temperature carrier mobility of the Al2C monolayer is direction-dependent, with μ of electron (e) and hole (h) being 2348 and 40.77 cm(2)/V/s, respectively, in the armchair direction and 59.95 (e) and 705.8 (h) in the zigzag direction. More interestingly, one-dimensional Al2C nanoribbons not only can retain the direction-dependent polarity but also may entail even higher mobility, in contrast to either the graphene nanoribbons which tend to exhibit lower μ compared to the two-dimensional graphene or the MoS2 nanoribbons which have reversed polarity compared to the MoS2 sheet. As an example, the Al-terminated zigzag nanoribbon with a width of 4.1 nm exhibits μ of 212.6 (e) and 2087 (h) cm(2)/V/s, while the C-terminated armchair nanoribbon with a width 2.6 nm exhibits μ of 1090 (e) and 673.9 (h) cm(2)/V/s; the C-terminated zigzag nanoribbon with a width 3.7 nm exhibits μ of 177.6 (e) and 1889 (h) cm(2)/V/s, and the Al-terminated armchair nanoribbon with a width 2.4 nm exhibits μ of 6695 (e) and 518.4 (h) cm(2)/V/s. The high carrier mobility, μ, coupled with polarity and direction dependence endows the Al2C sheet and nanoribbons with unique transport properties that can be exploited for special applications in nanoelectronics.
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Affiliation(s)
- Yuehua Xu
- School of Mathematics and Physics, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University , Changzhou, 213164 Jiangsu, China
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States
| | - Jun Dai
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States
| | - Xiao Cheng Zeng
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States
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31
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Cao T, Wang D, Geng DS, Liu LM, Zhao J. A strain or electric field induced direct bandgap in ultrathin silicon film and its application in photovoltaics or photocatalysis. Phys Chem Chem Phys 2016; 18:7156-62. [DOI: 10.1039/c5cp06528c] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Direct bandgaps are highly desired in all silicon allotropes. For ultrathin silicon films, strain or electric field can efficiently induce direct band-gaps in them.
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Affiliation(s)
- Tengfei Cao
- Beijing Computational Science Research Center
- Beijing 100084
- China
| | - Da Wang
- Beijing Computational Science Research Center
- Beijing 100084
- China
| | - Dong-Sheng Geng
- Beijing Computational Science Research Center
- Beijing 100084
- China
| | - Li-Min Liu
- Beijing Computational Science Research Center
- Beijing 100084
- China
| | - Jijun Zhao
- Beijing Computational Science Research Center
- Beijing 100084
- China
- Key Laboratory of Materials Modification by Laser
- Ion and Electron Beams
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32
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Chopra S. Excited state analysis of absorption processes in metal decorated graphene nanoribbons. RSC Adv 2016. [DOI: 10.1039/c6ra01513a] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Transition density matrix (TDM) based excited state analysis presented for single metal atom doped graphene C29H14-X. Natural transition orbitals (NTOs) and e–h correlation plots of Ti-doped graphene are shown below.
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33
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Nasari H, Abrishamian MS. Electrically tunable, plasmon resonance enhanced, terahertz third harmonic generation via graphene. RSC Adv 2016. [DOI: 10.1039/c6ra08086c] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
In this study, we demonstrate how field enhancement due to plasmonic resonances can noticeably improve the efficiency of third harmonic generation (THG) from graphene sheets on a grating substrate under normal illumination of terahertz (THz) waves.
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Affiliation(s)
- H. Nasari
- Department of Electrical Engineering
- K. N. Toosi University of Technology
- Tehran
- Iran
| | - M. S. Abrishamian
- Department of Electrical Engineering
- K. N. Toosi University of Technology
- Tehran
- Iran
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34
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Shi F, Chen Y, Han P, Tassin P. Broadband, Spectrally Flat, Graphene-based Terahertz Modulators. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:6044-6050. [PMID: 26448571 DOI: 10.1002/smll.201502036] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2015] [Revised: 09/04/2015] [Indexed: 06/05/2023]
Abstract
Advances in the efficient manipulation of terahertz waves are crucial for the further development of terahertz technology, promising applications in many diverse areas, such as biotechnology and spectroscopy, to name just a few. Due to its exceptional electronic and optical properties, graphene is a good candidate for terahertz electro-absorption modulators. However, graphene-based modulators demonstrated to date are limited in bandwidth due to Fabry-Perot oscillations in the modulators' substrate. Here, a novel method is demonstrated to design electrically controlled graphene-based modulators that can achieve broadband and spectrally flat modulation of terahertz beams. In our design, a graphene layer is sandwiched between a dielectric and a slightly doped substrate on a metal reflector. It is shown that the spectral dependence of the electric field intensity at the graphene layer can be dramatically modified by optimizing the structural parameters of the device. In this way, the electric field intensity can be spectrally flat and even compensate for the dispersion of the graphene conductivity, resulting in almost invariant absorption in a wide frequency range. Modulation depths up to 76% can be achieved within a fractional operational bandwidth of over 55%. It is expected that our modulator designs will enable the use of terahertz technology in applications requiring broadband operation.
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Affiliation(s)
- Fenghua Shi
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, China
| | - Yihang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, China
| | - Peng Han
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, China
| | - Philippe Tassin
- Department of Applied Physics, Chalmers University, SE-412 96, Göteborg, Sweden
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35
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Qin X, Liu Y, Li X, Xu J, Chi B, Zhai D, Zhao X. Origin of Dirac Cones in SiC Silagraphene: A Combined Density Functional and Tight-Binding Study. J Phys Chem Lett 2015; 6:1333-9. [PMID: 26263132 DOI: 10.1021/acs.jpclett.5b00365] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
The formation of Dirac cones in electronic band structures via isomorphous transformation is demonstrated in 2D planar SiC sheets. Our combined density functional and tight-binding calculations show that 2D SiC featuring C-C and Si-Si atom pairs possesses Dirac cones (DCs), whereas an alternative arrangement of C and Si leads to a finite band gap. The origin of Dirac points is attributed to bare interactions between Si-Si bonding states (valence bands, VBs) and C-C antibonding states (conduction bands, CBs), while the VB-CB coupling opens up band gaps elsewhere. A mechanism of atom pair coupling is proposed, and the conditions required for DC formation are discussed, enabling one to design a class of 2D binary Dirac fermion systems on the basis of DF calculations solely for pure and alternative binary structures.
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Affiliation(s)
- Xuming Qin
- †Department of Physics and Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China
- ‡Institute of Materials Physics and Chemistry, College of Sciences, Northeastern University, No. 3-11, Wenhua Road, Shenyang 110819, P. R. China
| | - Yi Liu
- †Department of Physics and Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China
- §School of Materials Science and Engineering, University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093, P. R. China
| | - Xiaowu Li
- ‡Institute of Materials Physics and Chemistry, College of Sciences, Northeastern University, No. 3-11, Wenhua Road, Shenyang 110819, P. R. China
| | - Jingcheng Xu
- §School of Materials Science and Engineering, University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093, P. R. China
| | - Baoqian Chi
- ‡Institute of Materials Physics and Chemistry, College of Sciences, Northeastern University, No. 3-11, Wenhua Road, Shenyang 110819, P. R. China
| | - Dong Zhai
- †Department of Physics and Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China
| | - Xinluo Zhao
- †Department of Physics and Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai 200444, P. R. China
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36
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Chopra S. Study of Electronic, Optical Absorption and Emission in Pure and Metal-Decorated Graphene Nanoribbons (C29H14-X; X=Ni, Fe, Ti, Co+, Al+, Cu+): First Principles Calculations. Chemphyschem 2015; 16:1948-53. [DOI: 10.1002/cphc.201500015] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2015] [Indexed: 11/08/2022]
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37
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Faugeras C, Berciaud S, Leszczynski P, Henni Y, Nogajewski K, Orlita M, Taniguchi T, Watanabe K, Forsythe C, Kim P, Jalil R, Geim AK, Basko DM, Potemski M. Landau level spectroscopy of electron-electron interactions in graphene. PHYSICAL REVIEW LETTERS 2015; 114:126804. [PMID: 25860767 DOI: 10.1103/physrevlett.114.126804] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2014] [Indexed: 06/04/2023]
Abstract
We present magneto-Raman scattering studies of electronic inter-Landau level excitations in quasineutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of noninteracting massless Dirac electrons but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter-Landau level excitations in graphene are sensitive to electron-electron interactions due to the nonapplicability of the Kohn theorem in this system, with a clearly nonparabolic dispersion relation.
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Affiliation(s)
- C Faugeras
- Laboratoire National des Champs Magnétiques Intenses, CNRS, (UJF, UPS, INSA), BP 166, 38042 Grenoble, Cedex 9, France
| | - S Berciaud
- Institut de Physique et Chimie des Matériaux de Strasbourg and NIE, UMR 7504, Université de Strasbourg and CNRS, BP43, 67034 Strasbourg, Cedex 2, France
| | - P Leszczynski
- Laboratoire National des Champs Magnétiques Intenses, CNRS, (UJF, UPS, INSA), BP 166, 38042 Grenoble, Cedex 9, France
| | - Y Henni
- Laboratoire National des Champs Magnétiques Intenses, CNRS, (UJF, UPS, INSA), BP 166, 38042 Grenoble, Cedex 9, France
| | - K Nogajewski
- Laboratoire National des Champs Magnétiques Intenses, CNRS, (UJF, UPS, INSA), BP 166, 38042 Grenoble, Cedex 9, France
| | - M Orlita
- Laboratoire National des Champs Magnétiques Intenses, CNRS, (UJF, UPS, INSA), BP 166, 38042 Grenoble, Cedex 9, France
| | - T Taniguchi
- National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - K Watanabe
- National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - C Forsythe
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - P Kim
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - R Jalil
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
| | - A K Geim
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
| | - D M Basko
- Université Grenoble 1/CNRS, Laboratoire de Physique et de Modélisation des Milieux Condensés (UMR 5493), B.P. 166, 38042 Grenoble, Cedex 9, France
| | - M Potemski
- Laboratoire National des Champs Magnétiques Intenses, CNRS, (UJF, UPS, INSA), BP 166, 38042 Grenoble, Cedex 9, France
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38
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Ferrari AC, Bonaccorso F, Fal'ko V, Novoselov KS, Roche S, Bøggild P, Borini S, Koppens FHL, Palermo V, Pugno N, Garrido JA, Sordan R, Bianco A, Ballerini L, Prato M, Lidorikis E, Kivioja J, Marinelli C, Ryhänen T, Morpurgo A, Coleman JN, Nicolosi V, Colombo L, Fert A, Garcia-Hernandez M, Bachtold A, Schneider GF, Guinea F, Dekker C, Barbone M, Sun Z, Galiotis C, Grigorenko AN, Konstantatos G, Kis A, Katsnelson M, Vandersypen L, Loiseau A, Morandi V, Neumaier D, Treossi E, Pellegrini V, Polini M, Tredicucci A, Williams GM, Hong BH, Ahn JH, Kim JM, Zirath H, van Wees BJ, van der Zant H, Occhipinti L, Di Matteo A, Kinloch IA, Seyller T, Quesnel E, Feng X, Teo K, Rupesinghe N, Hakonen P, Neil SRT, Tannock Q, Löfwander T, Kinaret J. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. NANOSCALE 2015; 7:4598-810. [PMID: 25707682 DOI: 10.1039/c4nr01600a] [Citation(s) in RCA: 991] [Impact Index Per Article: 110.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.
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Affiliation(s)
- Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK.
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39
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Zou Y, Long M, Li M, Zhang X, Zhang Q, Xu H. Control of electronic transport in nanohole defective zigzag graphene nanoribbon by means of side alkene chain. RSC Adv 2015. [DOI: 10.1039/c4ra12924e] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Spin-dependent transport properties can be modulated by the parity of the side alkene chain in defective ZGNR junctions.
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Affiliation(s)
- Yun Zou
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
| | - Mengqiu Long
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
| | - Mingjun Li
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
| | - Xiaojiao Zhang
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
| | - Qingtian Zhang
- Department of Physics and Materials Science
- City University of Hong Kong
- Hong Kong
- China
| | - Hui Xu
- Institute of Super-microstructure and Ultrafast Process in Advanced Materials
- School of Physics and Electronics
- Central South University
- Changsha 410083
- China
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40
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Latyshev YI, Orlov AP, Volkov VA, Enaldiev VV, Zagorodnev IV, Vyvenko OF, Petrov YV, Monceau P. Transport of massless Dirac fermions in non-topological type edge states. Sci Rep 2014; 4:7578. [PMID: 25524881 PMCID: PMC4271258 DOI: 10.1038/srep07578] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2014] [Accepted: 12/03/2014] [Indexed: 12/02/2022] Open
Abstract
There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of “topological” states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.
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Affiliation(s)
- Yu I Latyshev
- Kotelnikov Institute of Radio-engineering and Electronics of RAS, Mokhovaya 11-7, 125009 Moscow, Russia
| | - A P Orlov
- Kotelnikov Institute of Radio-engineering and Electronics of RAS, Mokhovaya 11-7, 125009 Moscow, Russia
| | - V A Volkov
- 1] Kotelnikov Institute of Radio-engineering and Electronics of RAS, Mokhovaya 11-7, 125009 Moscow, Russia [2] Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, 141700 Moscow region, Russia
| | - V V Enaldiev
- Kotelnikov Institute of Radio-engineering and Electronics of RAS, Mokhovaya 11-7, 125009 Moscow, Russia
| | - I V Zagorodnev
- Kotelnikov Institute of Radio-engineering and Electronics of RAS, Mokhovaya 11-7, 125009 Moscow, Russia
| | - O F Vyvenko
- IRC for Nanotechnology of St. Petersburg State University, Uljanovskaya 1, Petrodvorets, 198504 St. Petersburg, Russia
| | - Yu V Petrov
- IRC for Nanotechnology of St. Petersburg State University, Uljanovskaya 1, Petrodvorets, 198504 St. Petersburg, Russia
| | - P Monceau
- 1] Univ. Grenoble - Alpes, Inst. Neel, F38042 Grenoble, France [2] CNRS, Int. Neel, F38042 Grenoble, France [3] Laboratoire National des Champs Magnétiques Intenses, 25 rue des Martyrs, BP 166, 38042 Grenoble, Cedex 9, France
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41
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Li Z, Wang J, Liu Z. Intrinsic carrier mobility of Dirac cones: The limitations of deformation potential theory. J Chem Phys 2014; 141:144107. [DOI: 10.1063/1.4897533] [Citation(s) in RCA: 29] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Zhenzhu Li
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China and Center for Nanochemistry, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, and Beijing National Laboratory for Molecular Sciences (BNLMS), Peking University, Beijing 100871, China
| | - Jinying Wang
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China and Center for Nanochemistry, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, and Beijing National Laboratory for Molecular Sciences (BNLMS), Peking University, Beijing 100871, China
| | - Zhirong Liu
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China and Center for Nanochemistry, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, and Beijing National Laboratory for Molecular Sciences (BNLMS), Peking University, Beijing 100871, China
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42
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Lu CP, Li G, Watanabe K, Taniguchi T, Andrei EY. MoS 2 MoS2: choice substrate for accessing and tuning the electronic properties of graphene. PHYSICAL REVIEW LETTERS 2014; 113:156804. [PMID: 25375733 DOI: 10.1103/physrevlett.113.156804] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2014] [Indexed: 06/04/2023]
Abstract
One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite and hexagonal boron nitride (h-BN), still pose limitations: graphite being metallic does not allow gating, while both h-BN and graphite, having lattice structures closely matched to that of graphene, may cause significant band structure reconstruction. Here we show that the atomically smooth surface of exfoliated MoS(2) provides access to the intrinsic electronic structure of graphene without these drawbacks. Using scanning tunneling microscopy and Landau-level (LL) spectroscopy in a device configuration that allows tuning of the carrier concentration, we find that graphene on MoS(2) is ultraflat, producing long mean free paths, while avoiding band structure reconstruction. Importantly, the screening of the MoS(2) substrate can be tuned by changing the position of the Fermi energy with relatively low gate voltages. We show that shifting the Fermi energy from the gap to the edge of the conduction band gives rise to enhanced screening and to a substantial increase in the mean free path and quasiparticle lifetime. MoS(2) substrates thus provide unique opportunities to access the intrinsic electronic properties of graphene and to study in situ the effects of screening on electron-electron interactions and transport.
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Affiliation(s)
- Chih-Pin Lu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, USA and Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Guohong Li
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, USA
| | - K Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Eva Y Andrei
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, USA
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43
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Ilyasov VV, Meshi BC, Nguyen VC, Ershov IV, Nguyen DC. Tuning the band structure, magnetic and transport properties of the zigzag graphene nanoribbons/hexagonal boron nitride heterostructures by transverse electric field. J Chem Phys 2014; 141:014708. [PMID: 25005304 DOI: 10.1063/1.4885857] [Citation(s) in RCA: 36] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023] Open
Affiliation(s)
- V V Ilyasov
- Department of Physics, Don State Technical University, 1 Gagarin Sq, 344000 Rostov on Don, Russia
| | - B C Meshi
- Department of Physics, Don State Technical University, 1 Gagarin Sq, 344000 Rostov on Don, Russia
| | - V C Nguyen
- Department of Physics, Don State Technical University, 1 Gagarin Sq, 344000 Rostov on Don, Russia
| | - I V Ershov
- Department of Physics, Don State Technical University, 1 Gagarin Sq, 344000 Rostov on Don, Russia
| | - D C Nguyen
- Department of Electronic Materials, School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Rd, 10000 Hanoi, Vietnam
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44
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Cai Y, Zhang G, Zhang YW. Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons. J Am Chem Soc 2014; 136:6269-75. [DOI: 10.1021/ja4109787] [Citation(s) in RCA: 618] [Impact Index Per Article: 61.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Yongqing Cai
- Institute of High Performance Computing, 1 Fusionopolis
Way, Singapore,138632
| | - Gang Zhang
- Institute of High Performance Computing, 1 Fusionopolis
Way, Singapore,138632
| | - Yong-Wei Zhang
- Institute of High Performance Computing, 1 Fusionopolis
Way, Singapore,138632
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45
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Chopra S, Maidich L. Optical properties of pure graphene in various forms: a time dependent density functional theory study. RSC Adv 2014. [DOI: 10.1039/c4ra06727d] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Optical absorption in graphene nano-ribbons (GNRs) of various shapes and isomeric forms was studied using time dependent density functional theory based calculations. The highest oscillator strength was found for rectangular GNRs.
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Affiliation(s)
- S. Chopra
- Department of Physics, AIAS
- Amity University
- Noida, India
| | - L. Maidich
- Department of Chemistry and Pharmacy
- University of Sassari
- Italy
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46
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Probing Dirac Fermions in Graphene by Scanning Tunneling Microscopy and Spectroscopy. ACTA ACUST UNITED AC 2013. [DOI: 10.1007/978-3-319-02633-6_2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/20/2023]
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47
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Valmorra F, Scalari G, Maissen C, Fu W, Schönenberger C, Choi JW, Park HG, Beck M, Faist J. Low-bias active control of terahertz waves by coupling large-area CVD graphene to a terahertz metamaterial. NANO LETTERS 2013; 13:3193-8. [PMID: 23802181 DOI: 10.1021/nl4012547] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
We propose an hybrid graphene/metamaterial device based on terahertz electronic split-ring resonators directly evaporated on top of a large-area single-layer CVD graphene. Room temperature time-domain spectroscopy measurements in the frequency range from 250 GHz to 2.75 THz show that the presence of the graphene strongly changes the THz metamaterial transmittance on the whole frequency range. The graphene gating allows active control of such interaction, showing a modulation depth of 11.5% with an applied bias of 10.6 V. Analytical modeling of the device provides a very good qualitative and quantitative agreement with the measured device behavior. The presented system shows potential as a THz modulator and can be relevant for strong light-matter coupling experiments.
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Affiliation(s)
- Federico Valmorra
- Institute for Quantum Electronics, ETH Zurich , Wolfgang-Pauli-Strasse 16, CH-8093 Zurich, Switzerland
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48
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Liu X, Zhang Z, Guo W. Universal rule on chirality-dependent bandgaps in graphene antidot lattices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2013; 9:1405-1410. [PMID: 23530006 DOI: 10.1002/smll.201202988] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2012] [Indexed: 06/02/2023]
Abstract
Graphene with periodically patterned antidots has attracted intense research attention as it represents a facile route to open a bandgap for graphene electronics. However, not all graphene antidot lattices (GALs) can open a bandgap and a guiding rule is missing. Here, through systematic first-principles calculations, it is found that bandgaps in triangular GALs are surprisingly well defined by a chirality vector R = n a1 + ma2 connecting two neighboring antidots, where a1 and a2 are the basis vectors of graphene. The bandgap opens in the GALs with (n-m)mod3 = 0 but remains closed in those with (n-m)mod3 = ±1, reminiscent of the gap-chirality rule in carbon nanotubes. Remarkably, the gap value in GALs allows ample modulation by adjusting the length of chirality vectors, shape and size of the antidots. The gap-chirality relation in GALs stems from the chirality-dependent atomic structures of GALs as revealed by a super-atom model as well as Clar sextet analyses. This chirality-dependent bandgap is further shown to be a generic behavior in any parallelogram GAL and thus serves as an essential stepping stone for experimenters to realize graphene devices by antidot engineering.
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Affiliation(s)
- Xiaofei Liu
- Key Laboratory for Intelligent Nano Materials and Devices of MOE, State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing, P. R. China
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49
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Bonaccorso F, Tan PH, Ferrari AC. Multiwall nanotubes, multilayers, and hybrid nanostructures: new frontiers for technology and Raman spectroscopy. ACS NANO 2013; 7:1838-44. [PMID: 23472925 DOI: 10.1021/nn400758r] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Technological progress is determined, to a great extent, by developments in material science. Breakthroughs can happen when a new type of material or new combinations of known materials with different dimensionality and functionality are created. Multilayered structures, being planar or concentric, are now emerging as major players at the forefront of research. Raman spectroscopy is a well-established characterization technique for carbon nanomaterials and is being developed for layered materials. In this issue of ACS Nano, Hirschmann et al. investigate triple-wall carbon nanotubes via resonant Raman spectroscopy, showing how a wealth of information can be derived about these complex structures. The next challenge is to tackle hybrid heterostructures, consisting of different planar or concentric materials, arranged "on demand" to achieve targeted properties.
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Affiliation(s)
- Francesco Bonaccorso
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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50
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Hagenmüller D, Ciuti C. Cavity QED of the graphene cyclotron transition. PHYSICAL REVIEW LETTERS 2012; 109:267403. [PMID: 23368618 DOI: 10.1103/physrevlett.109.267403] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2011] [Indexed: 06/01/2023]
Abstract
We investigate theoretically the cavity quantum electrodynamics of the cyclotron transition for Dirac fermions in graphene. We show that the ultrastrong coupling regime characterized by a vacuum Rabi frequency comparable or even larger than the transition frequency can be obtained for high enough filling factors of the graphene Landau levels. Important qualitative differences occur with respect to the corresponding physics of massive electrons in a semiconductor quantum well. In particular, an instability for the ground state analogous to the one occurring in the Dicke model is predicted for an increasing value of the electron density.
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Affiliation(s)
- David Hagenmüller
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot-Paris 7 and CNRS, Bâtiment Condorcet, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
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