Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films

Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing a vanishing quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.

Nanoscale self-organization and metastable non-thermal metallicity in Mott insulators

Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation. Here, we combine time-resolved X-ray microscopy with a Landau-Ginzburg functional approach for calculating the strain and electronic real-space configurations. We investigate V₂O₃, the archetypal Mott insulator in which nanoscale self-organization already exists in the low-temperature monoclinic phase and strongly affects the transition towards the high-temperature corundum metallic phase. Our joint experimental-theoretical approach uncovers a remarkable out-of-equilibrium phenomenon: the photo-induced stabilisation of the long sought monoclinic metal phase, which is absent at equilibrium and in homogeneous materials, but emerges as a metastable state solely when light excitation is combined with the underlying nanotexture of the monoclinic lattice.

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V2O3

In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V₂O₃, the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

Pressure-Induced Phase Transitions in Sesquioxides

Pressure is an important thermodynamic parameter, allowing the increase of matter density by reducing interatomic distances that result in a change of interatomic interactions. In this context, the long range in which pressure can be changed (over six orders of magnitude with respect to room pressure) may induce structural changes at a much larger extent than those found by changing temperature or chemical composition. In this article, we review the pressure-induced phase transitions of most sesquioxides, i.e., A2O3 compounds. Sesquioxides constitute a big subfamily of ABO3 compounds, due to their large diversity of chemical compositions. They are very important for Earth and Materials Sciences, thanks to their presence in our planet’s crust and mantle, and their wide variety of technological applications. Recent discoveries, hot spots, controversial questions, and future directions of research are highlighted.

Uncovering the Mechanism of the Impurity-Selective Mott Transition in Paramagnetic V_{2}O_{3}

While the phase diagrams of the one- and multiorbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator V_{2}O_{3}, chemical pressure was initially believed to explain why the paramagnetic-metal to antiferromagnetic-insulator transition temperature is lowered by Ti doping while Cr doping strengthens correlations, eventually rendering the high-temperature phase paramagnetic insulating. However, this scenario has been recently shown both experimentally and theoretically to be untenable. Based on full structural optimization, we demonstrate via the charge self-consistent combination of density functional theory and dynamical mean-field theory that changes in the V_{2}O_{3} phase diagram are driven by defect-induced local symmetry breakings resulting from dramatically different couplings of Cr and Ti dopants to the host system. This finding emphasizes the high sensitivity of the Mott metal-insulator transition to the local environment and the importance of accurately accounting for the one-electron Hamiltonian, since correlations crucially respond to it.

Kinetic Spinodal Instabilities in the Mott Transition in V_{2}O_{3}: Evidence from Hysteresis Scaling and Dissipative Phase Ordering

We present the first systematic observation of scaling of thermal hysteresis with the temperature scanning rate around an abrupt thermodynamic transition in correlated electron systems. We show that the depth of supercooling and superheating in vanadium sesquioxide (V_{2}O_{3}) shifts with the temperature quench rates. The dynamic scaling exponent is close to the mean field prediction of 2/3. These observations, combined with the purely dissipative continuous ordering seen in "quench-and-hold" experiments, indicate departures from classical nucleation theory toward a barrier-free phase ordering associated with critical dynamics. Observation of critical-like features and scaling in a thermally induced abrupt phase transition suggests that the presence of a spinodal-like instability is not just an artifact of the mean field theories but can also exist in the transformation kinetics of real systems, surviving fluctuations.

Ultrafast evolution and transient phases of a prototype out-of-equilibrium Mott-Hubbard material

The study of photoexcited strongly correlated materials is attracting growing interest since their rich phase diagram often translates into an equally rich out-of-equilibrium behaviour. With femtosecond optical pulses, electronic and lattice degrees of freedom can be transiently decoupled, giving the opportunity of stabilizing new states inaccessible by quasi-adiabatic pathways. Here we show that the prototype Mott–Hubbard material V₂O₃ presents a transient non-thermal phase developing immediately after ultrafast photoexcitation and lasting few picoseconds. For both the insulating and the metallic phase, the formation of the transient configuration is triggered by the excitation of electrons into the bonding a_1g orbital, and is then stabilized by a lattice distortion characterized by a hardening of the A_1g coherent phonon, in stark contrast with the softening observed upon heating. Our results show the importance of selective electron–lattice interplay for the ultrafast control of material parameters, and are relevant for the optical manipulation of strongly correlated systems.

Ultrafast photoexcitation stabilizes new states of matter with rich out-of-equilibrium behaviours. Here, Lantz et al. report a transient non-thermal phase developing immediately after photoexcitation in V₂O₃, shedding a light on optical manipulation of strongly correlated systems.

Fermi Surface of Metallic V_{2}O_{3} from Angle-Resolved Photoemission: Mid-level Filling of e_{g}^{π} Bands

Using angle resolved photoemission spectroscopy, we report the first band dispersions and distinct features of the bulk Fermi surface (FS) in the paramagnetic metallic phase of the prototypical metal-insulator transition material V_{2}O_{3}. Along the c axis we observe both an electron pocket and a triangular holelike FS topology, showing that both V 3d a_{1g} and e_{g}^{π} states contribute to the FS. These results challenge the existing correlation-enhanced crystal field splitting theoretical explanation for the transition mechanism and pave the way for the solution of this mystery.

Shining light on transition-metal oxides: unveiling the hidden Fermi liquid

We use low energy optical spectroscopy and first principles local density approximation plus dynamical mean field theory calculations to test the hypothesis that the anomalous transport properties of strongly correlated metals originate in the strong temperature dependence of their underlying resilient quasiparticles. We express the resistivity in terms of an effective plasma frequency ω(p)* and an effective scattering rate 1/τ(tr)*. We show that in the archetypal correlated material V₂O₃, ω(p)* increases with increasing temperature, while the plasma frequency from the partial sum rule exhibits the opposite trend. 1/τ(tr)* has a more pronounced temperature dependence than the scattering rate obtained from the extended Drude analysis. The theoretical calculations of these quantities are in quantitative agreement with experiment. We conjecture that these are robust properties of all strongly correlated metals, and test the conjecture by carrying out a similar analysis on thin film NdNiO₃ on a LaAlO₃ substrate.

Dynamical mean field theory-based electronic structure calculations for correlated materials

We give an introduction to dynamical mean field approaches to correlated materials. Starting from the concept of electronic correlation, we explain why a theoretical description of correlations in spectroscopic properties needs to go beyond the single-particle picture of band theory.We discuss the main ideas of dynamical mean field theory and its use within realistic electronic structure calculations, illustrated by examples of transition metals, transition metal oxides, and rare-earth compounds. Finally, we summarise recent progress on the calculation of effective Hubbard interactions and the description of dynamical screening effects in solids.

Novel high-pressure monoclinic metallic phase of V2O3

Vanadium sesquioxide, V2O3, is a prototypical metal-to-insulator system where, in temperature-dependent studies, the transition always coincides with a corundum-to-monoclinic structural transition. As a function of pressure, V2O3 follows the expected behavior of increased metallicity due to a larger bandwidth for pressures up to 12.5 GPa. Surprisingly, for higher pressures when the structure becomes unstable, the resistance starts to increase. Around 32.5 GPa at 300 K, we observe a novel pressure-induced corundum-to-monoclinic transition between two metallic phases, showing that the structural phase transition can be decoupled from the metal-insulator transition. Using x-ray Raman scattering, we find that screening effects, which are strong in the corundum phase, become weakened at high pressures. Theoretical calculations indicate that this can be related to a decrease in coherent quasiparticle strength, suggesting that the high-pressure phase is likely a critical correlated metal, on the verge of Mott-insulating behavior.

Anomalous compression and new high-pressure phases of vanadium sesquioxide, V2O3

We report results of a powder x-ray diffraction (XRD) study of vanadium sesquioxide, V2O3, under pressurization in a neon pressure-transmitting medium up to 57 GPa. We have established a bulk modulus value for corundum-type V2O3 of B0 = 150 GPa at B' = 4. This bulk modulus value is the lowest among those known for the corundum-type-structured oxides, e.g. Al2O3, α-Fe2O3, Cr2O3, Ti2O3, and α-Ga2O3. We have proposed that this might be related to the difference in the electronic band structures: at room temperature V2O3 is metallic, but the above corundum-structured sesquioxides are semiconducting or insulating. Around ∼21-27 and ∼50 GPa we registered changes in the XRD patterns that might be addressed to phase transitions. These transitions were sluggish upon room-temperature compression, and hence we additionally facilitated them by the laser heating of one sample. We have refined the XRD patterns of only the first high-pressure phase in an orthorhombic lattice of a Rh2O3(II)-type. Our findings significantly extend the knowledge of the P-T phase diagram of V2O3 and advance the understanding of its properties. We speculate that the elastic properties of V2O3 can be closely linked to its electronic band structure and, consequently, we propose that slightly doped V2O3 (e.g. with Cr) could be a potential candidate for systems in which the bulk modulus value may be remarkably switched by moderate pressure or temperature.

Growth and physical properties of vanadium oxide thin films with controllable phases

Vanadium oxides thin films with variable oxidation states have attracted great attention due to their unique electrical, optical properties and many important applications in microelectronics, infrared optical devices, and energy harvest systems. However, to fabricate vanadium oxide thin films with controllable phases and desired transport properties is still a challenge by using a chemical solution deposition (CSD) technique. In this paper, we report that vanadium oxide thin films with well controlled phases such as rhombohedral V2O3 and monoclinic VO2 could be synthesized on Al2O3 (0001) substrates using a CSD technique ---- polymer assisted deposition (PAD). Both V2O3 and VO2 thin films can be well controlled with good epitaxial quality by optimizing the fabrication parameters. The electrical resistivity changes 3∼4 orders of magnitude at metal insulator transition for both epitaxial V2O3 and VO2 thin films. The correlation between the physical properties and the microstructures of the films will be discussed.

High energy resolution five-crystal spectrometer for high quality fluorescence and absorption measurements on an x-ray absorption spectroscopy beamline

Fluorescence detection is classically achieved with a solid state detector (SSD) on x-ray absorption spectroscopy (XAS) beamlines. This kind of detection however presents some limitations related to the limited energy resolution and saturation. Crystal analyzer spectrometers (CAS) based on a Johann-type geometry have been developed to overcome these limitations. We have tested and installed such a system on the BM30B/CRG-FAME XAS beamline at the ESRF dedicated to the structural investigation of very dilute systems in environmental, material and biological sciences. The spectrometer has been designed to be a mobile device for easy integration in multi-purpose hard x-ray synchrotron beamlines or even with a laboratory x-ray source. The CAS allows to collect x-ray photons from a large solid angle with five spherically bent crystals. It will cover a large energy range allowing to probe fluorescence lines characteristic of all the elements from Ca (Z = 20) to U (Z = 92). It provides an energy resolution of 1-2 eV. XAS spectroscopy is the main application of this device even if other spectroscopic techniques (RIXS, XES, XRS, etc.) can be also achieved with it. The performances of the CAS are illustrated by two experiments that are difficult or impossible to perform with SSD and the complementarity of the CAS vs SSD detectors is discussed.

Photoinduced phase transitions by time-resolved far-infrared spectroscopy in V2O3

Using time-resolved far-infrared spectroscopy, we observe multiple routes for photoinduced phase transitions in V(2)O(3). This includes (i) a photothermal antiferromagnetic to paramagnetic transition and (ii) an incipient strain-generated paramagnetic metal to paramagnetic insulator transition, which manifests as coherent oscillations in the far-infrared conductivity. The ∼100 ps conductivity oscillation results from coherent acoustic phonon modulation of the bandwidth W. Our results indicate that poor metals are particularly amenable to coherent strain control of their electronic properties.

The importance of the on-site electron-electron interaction for the magnetic coupling in the zigzag spin-chain compound In2VO5

We present first-principles electronic structure calculations for the zigzag spin-chain compound In(2)VO(5) using the generalized gradient approximation both with and without inclusion of an on-site Coulomb interaction. It has been proposed that In(2)VO(5) is characterized by itinerant V 3d electrons at high temperature and localized electrons at low temperature. Consequently, it is to be expected that electronic correlations play an important role for the magnetic transition from ferromagnetic to antiferromagnetic exchange around 120 K. In this context, we study the electronic and magnetic properties of a set of possible spin configurations. Our calculations show that inclusion of an on-site Coulomb interaction in fact changes the ground state from ferromagnetic to antiferromagnetic.