Engineering the electronic band structure for multiband solar cells

Increasing the Efficiency of Photocatalytic Water Splitting via Introducing Intermediate Bands

Photocatalytic water splitting is a potential way to utilize solar energy. To be practically useful, it is important to have a high solar-to-hydrogen (STH) efficiency. In this study, we propose a conceptually new photocatalytic water splitting model based on intermediate bands (IBs). In this new model, introducing IBs within the band gap can significantly increase the STH efficiency limit (from 30.7% to 48.1% without an overpotential and from 13.4% to 36.2% with overpotentials) compared to that in conventional single-band gap photocatalytic water splitting. First-principles calculations indicate that N-doped TiO₂, Bi-doped TiO₂, and P-doped ZnO have suitable IBs that can be used to construct IB photocatalytic water splitting systems. The STH efficiency limits of these three doped systems are 10.0%, 12.0%, and 19.0%, respectively, while those of pristine TiO₂ and ZnO without IB are only 0.9% and 1.6%, respectively. The IB photocatalytic water splitting model proposed in this study opens a new avenue for photocatalytic water splitting design.

Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering

Energy upconversion via optical processes in semiconductor nanowires (NWs) is attractive for a variety of applications in nano-optoelectronics and nanophotonics. One of the main challenges is to achieve a high upconversion efficiency and, thus, a wide dynamic range of device performance, allowing efficient upconversion even under low excitation power. Here, we demonstrate that the efficiency of energy upconversion via two-photon absorption (TPA) can be drastically enhanced in core/shell NW heterostructures designed to provide a real intermediate TPA step via the band states of the narrow-bandgap region with a long carrier lifetime, fulfilling all the necessary requirements for high-efficiency two-step TPA. We show that, in radial GaAs(P)/GaNAs(P) core/shell NW heterostructures, the upconversion efficiency increases by 500 times as compared with that of the constituent materials, even under an excitation power as low as 100 mW/cm² that is comparable to the 1 sun illumination. The upconversion efficiency can be further improved by 8 times through engineering the electric-field distribution of the excitation light inside the NWs so that light absorption is maximized within the desired region of the heterostructure. This work demonstrates the effectiveness of our approach in providing efficient photon upconversion by exploring core/shell NW heterostructures, yielding an upconversion efficiency being among the highest reported in semiconductor nanostructures. Furthermore, our work provides design guidelines for enhancing efficiency of energy upconversion in NW heterostructures.

Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots

Photovoltaic cells, based on quantum dots implementation in the intrinsic region, are one of the most widely studied concepts nowadays to obtain a high solar conversion efficiency. The challenge in this third generation of solar cells is to find a good combination of materials that allows obtaining higher efficiency with low cost. In this study, we consider a juxtaposition of two kinds of quantum dots (dot/barrier) inside the I region of the PIN junction: the first combination of semiconductors includes the two configurations, PbTe/CdTe and PbSe/ZnTe, and the second combination is InN/GaN. Thus the intermediate band can be tailored by controlling the size of the dots and the inter-dot distances. The principal interest of this investigation is to determine the optimized parameters (the dot size and the inter-dot distance), leading to obtain a better solar cell efficiency. Intermediate bands, their positions, and their widths, are determined using 3D confined particles (electron and hole). Their energy levels are determined by solving the Schrödinger equation and solving the well-known dispersion relation in the Kronig–Penney model.

Nonlinear plexcitons: excitons coupled with plasmons in two-photon absorption

The nonlinear optical properties of a D-A (donor-acceptor) conjugated organic molecule with polythiophene (PT) as the donor and indene-C₆₀ bisadduct (IC₆₀BA) as the acceptor are theoretically investigated, which exhibits a large two-photon absorption (TPA) cross-section up to 8000 GM at the wavelength of 780 nm. Combining surface plasmon resonances (SPRs) with nonlinear optics, nonlinear properties can be strongly enhanced. In this paper, an appropriate nonlinear plexciton method by the coupling of Au@Ag nanorods and an Ag film is designed, in which the TPA properties of the PT:IC₆₀BA complex can be increased by 10⁶ times. The angle dependence on polarization and incidence is investigated to obtain the maximum of plasmonic enhancement. Our results emphasize the physical mechanism of nonlinear plexcitons and provide a feasible method to improve the nonlinear properties of organic solar cell materials.

Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer

Remote heteroepitaxy is known to yield semiconductor films with better quality. However, the atomic mechanisms in systems with large mismatches are still unclear. Herein, low-strain single-crystalline nitride films are achieved on highly mismatched (∼16.3%) sapphire via graphene-assisted remote heteroepitaxy. Because of a weaker interface potential, the in-plane compressive strain at the interface releases by 30%, and dislocations are prevented. Meanwhile, the lattice distortions in the epilayer disappear when the structure climbs over the atomic steps on substrates because graphene renders the steps smooth. In this way, the density of edge dislocations in as-grown nitride films reduces to the same level as that of the screw dislocations, which is rarely observed in heteroepitaxy. Further, the indium composition in In_xGa_1-xN/GaN multiquantum wells increases to ∼32%, enabling the fabrication of a yellow light-emitting diode. This study demonstrates the advantages of remote heteroepitaxy for bandgap tuning and opens opportunities for photoelectronic and electronic applications.

Detailed Balance-Limiting Efficiency of Solar Cells with Dual Intermediate Bands Based on InAs/InGaAs Quantum Dots

The intermediate-band solar cell (IBSC) has been proposed as a high-efficiency solar cell because of the extended absorption it allows for, which results from the intermediate band. In order to further increase the efficiency of IBSCs, we study a novel device with dual intermediate bands. Because of the extended absorption from the second intermediate band, the efficiency of a dual IBSC can reach 86.5% at a full concentration. Moreover, we study the performance of the IBSC based on InAs/InGaAs quantum dots. The efficiency of the device is shown to be able to reach 74.4% when the In composition is 75%. In addition, the transition process between the dual intermediate bands greatly affects the efficiency, so it is important to design the dual intermediate bands in a precise manner.

Copper Oxide-Based Photocatalysts and Photocathodes: Fundamentals and Recent Advances

This work aims at reviewing the most impactful results obtained on the development of Cu-based photocathodes. The need of a sustainable exploitation of renewable energy sources and the parallel request of reducing pollutant emissions in airborne streams and in waters call for new technologies based on the use of efficient, abundant, low-toxicity and low-cost materials. Photoelectrochemical devices that adopts abundant element-based photoelectrodes might respond to these requests being an enabling technology for the direct use of sunlight to the production of energy fuels form water electrolysis (H2) and CO2 reduction (to alcohols, light hydrocarbons), as well as for the degradation of pollutants. This review analyses the physical chemical properties of Cu2O (and CuO) and the possible strategies to tune them (doping, lattice strain). Combining Cu with other elements in multinary oxides or in composite photoelectrodes is also discussed in detail. Finally, a short overview on the possible applications of these materials is presented.

Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1-xN Quantum Dot Solar Cells

Solar cells that are based on the implementation of quantum dots in the intrinsic region, so-called intermediate band solar cells (IBSCs), are among the most widely used concepts nowadays for achieving high solar conversion efficiency. The principal characteristics of such solar cells relate to their ability to absorb low energy photons to excite electrons through the intermediate band, allowing for conversion efficiency exceeding the limit of Shockley–Queisser. IBSCs are generating considerable interest in terms of performance and environmental friendliness. However, there is still a need for optimizing many parameters that are related to the solar cells, such as the size of quantum dots, their shape, the inter-dot distance, and choosing the right material. To date, most studies have only focused on studying IBSC composed of cubic shape of quantum dots. The main objective of this study is to extend the current knowledge of IBSC. Thus, we analyze the effect of the shape of the quantum dot on the electronic and photonic characteristics of indium nitride and indium gallium nitride multiple quantum dot solar cells structure considering cubic, spherical, and cylindrical quantum dot shapes. The ground state of electrons and holes energy levels in quantum dot are theoretically determined by considering the Schrödinger equation within the effective mass approximation. Thus, the inter and intra band transitions are determined for different dot sizes and different inter dot spacing. Consequently, current–voltage (J-V) characteristic and efficiencies of these devices are evaluated and compared for different shapes. Our calculations show that, under fully concentrated light, for the same volume of different quantum dots (QD) shapes and a well determined In-concentration, the maximum of the photovoltaic conversion efficiencies reaches 63.04%, 62.88%, and 62.43% for cubic, cylindrical, and spherical quantum dot shapes, respectively.

Demonstration of a GaSb/GaAs Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point

Intermediate band solar cells (IBSCs) promise high efficiencies while maintaining a low device structural complexity. A high efficiency can be obtained by harvesting below-band-gap photons, thus increasing the current, while at the same time preserving a high voltage. Here, we provide experimental proof that below-band-gap photons can be used to produce nonzero electrical work in an IBSC without compromising the voltage. For this, we manufacture a GaSb/GaAs quantum-dot IBSC. We use light biasing and make our cell operate at the maximum power point at 9 K. We measure the photocurrent response to absorption of photons with an energy of less than 1.15 eV while the cell is operating at 1.15 V. We also show that this result implies the existence of three quasi-Fermi levels linked to the three electronic bands in our device, as demanded by the IBSC theory to preserve the output voltage of the cell.

Gallium vacancies—common non-radiative defects in ternary GaAsP and quaternary GaNAsP nanowires

Nanowires (NWs) based on ternary GaAsP and quaternary GaNAsP alloys are considered as very promising materials for optoelectronic applications, including in multi-junction and intermediate band solar cells. The efficiency of such devices is expected to be largely controlled by grown-in defects. In this work we use the optically detected magnetic resonance (ODMR) technique combined with photoluminescence measurements to investigate the origin of point defects in Ga(N)AsP NWs grown by molecular beam epitaxy on Si substrates. We identify gallium vacancies, which act as non-radiative recombination centers, as common defects in ternary and quaternary Ga(N)AsP NWs. Furthermore, we show that the presence of N is not strictly necessary for, but promotes, the formation of gallium vacancies in these NWs.

Effects of oxygen variation on the improved structural stability, electronic and optical properties of ZnTeO compounds

Crystalline ZnTeO thin films are promising materials for next generation photovoltaics. However, their structural stability and optical nonlinearity potential in bulk form have not been reported. Here, structural, electronic and optical properties of ZnTeO composites have been thoroughly studied using genetic algorithm and density functional theory (DFT). Energetically, mechanically and dynamically stable O-rich phases, namely Zn₂Te₂O₆ and ZnTeO₄, were obtained. Ground-state properties such as lattice constants and simulated XRD were analyzed and compared to the experimental literature wherever possible. With a G ₀ W ₀ corrected band gap, these semiconducting phases display several desirable features, namely, Jahn-Teller distorted cations, hardness and shear anisotropy-induced optical nonlinearity that increase monotonically as O concentration elevates. Such trends appear to be consistent with that seen in the experimental study of ZnTeO thin film. It is observed that Zn-d, Te-p  and O-p  states have immense influence towards the electronic properties of these structures. Both phases exhibit steep elevation of absorption throughout the ultraviolet (UV) range, hitting peak value of ~5.0  ×  10⁵ cm^-1. Of particular interest, the non-centrosymmetric ZnTeO₄ has second harmonic generation coefficients (9.84 pm V^-1 and 2.33 pm V^-1 at static limit) greater than borates crystal and large birefringence that exceeds 0.08 in deep UV region, thus highlighting its potential pedigree as new optical materials in UV range.

Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology

Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.

The Microstructure, Electric, Optical and Photovoltaic Properties of BiFeO3 Thin Films Prepared by Low Temperature Sol⁻Gel Method

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices due to their abnormal photovoltaic effect. However, the current reported efficiency is still low. Hence, it is urgent to develop narrow-band gap ferroelectric materials with strong ferroelectricity by low-temperature synthesis. In this paper, the perovskite bismuth ferrite BiFeO₃ (BFO) thin films were fabricated on SnO₂: F (FTO) substrates by the sol-gel method and they were rapidly annealed at 450, 500 and 550 °C, respectively. The microstructure and the chemical state's evolution with annealing temperature were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), and the relationship between the microstructure and electric, optical and photovoltaic properties were studied. The XRD, SEM and Raman results show that a pure phase BFO film with good crystallinity is obtained at a low annealing temperature of 450 °C. As the annealing temperature increases, the film becomes more uniform and has an improved crystallinity. The XPS results show that the Fe³⁺/Fe²⁺ ratio increases and the ratio of oxygen vacancies/lattice oxygen decreases with increasing annealing temperature, which results in the leakage current gradually being reduced. The band gap is reduced from 2.68 to 2.51 eV due to better crystallinity. An enhanced photovoltaic effect is observed in a 550 °C annealed BFO film with a short circuit current of 4.58 mA/cm² and an open circuit voltage of 0.15 V, respectively.

Charge Transfer Dynamics of Phase-Segregated Halide Perovskites: CH3NH3PbCl3 and CH3NH3PbI3 or (C4H9NH3)2(CH3NH3) n-1Pb nI3 n+1 Mixtures

Lead halide perovskites present a versatile class of solution-processable semiconductors with highly tunable bandgaps that span ultraviolet, visible, and near-infrared portions of the spectrum. We explore phase-separated chloride and iodide lead perovskite mixtures as candidate materials for intermediate band applications in future photovoltaics. X-ray diffraction and scanning electron microscopy reveal that deposition of precursor solutions across the MAPbCl₃/MAPbI₃ composition space affords quasi-epitaxial cocrystallized films, in which the two perovskites do not alloy but instead remain phase-segregated. First-principle calculations further support the formation of an epitaxial interface and predict energy offsets in the valence band and conduction band edges that could result in intermediate energy absorption. The charge dynamics of variable mixtures of the relatively narrow bandgap (1.57 eV) MAPbI₃ perovskite and wide bandgap (3.02 eV) MAPbCl₃ are probed to map charge and energy flow direction and kinetics. Time-resolved photoluminescence and transient absorption measurements reveal charge transfer of photoexcited carriers in MAPbCl₃ to MAPbI₃ in tens of picoseconds. The rate of quenching can be further tuned by replacing MAPbI₃ with two-dimensional Ruddlesden-Popper (BA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 3, 2, and 1) perovskites, which also remain phase-separated.

Bulk Heterojunction Organic Solar Cells: Working Principles and Power Conversion Efficiencies

Bulk heterojunction solar cells are a promising low-cost photovoltaic technology. This chapter discusses the efficiency potential, the role of nanomorphology and approaches to increase the power conversion efficiency of bulk heterojunction solar cells. The stacking of devices on top of each other – constructing the so-called tandem cell – appears to be one of the best ways to reach the power conversion efficiencies necessary for the large-scale commercialization of this technology.

Band-edge engineering for controlled multi-modal nanolasing in plasmonic superlattices

Single band-edge states can trap light and function as high-quality optical feedback for microscale lasers and nanolasers. However, access to more than a single band-edge mode for nanolasing has not been possible because of limited cavity designs. Here, we describe how plasmonic superlattices-finite-arrays of nanoparticles (patches) grouped into microscale arrays-can support multiple band-edge modes capable of multi-modal nanolasing at programmed emission wavelengths and with large mode spacings. Different lasing modes show distinct input-output light behaviour and decay dynamics that can be tailored by nanoparticle size. By modelling the superlattice nanolasers with a four-level gain system and a time-domain approach, we reveal that the accumulation of population inversion at plasmonic hot spots can be spatially modulated by the diffractive coupling order of the patches. Moreover, we show that symmetry-broken superlattices can sustain switchable nanolasing between a single mode and multiple modes.

Investigating an intermediate-band photovoltaic material based on scandium-hyperdoped silicon through first-principles calculations

In the scandium-hyperdoped silicon, scandiums tend to form interstitial dimers due to their lowest formation energies. The interstitial dimers of Sc formed in silicon can introduce several intermediate-bands (IBs) in the band gap, which can lead to strong sub-band gap absorption. When the two interstitial Sc atoms get close to each other, the infrared response decreases and shifts to short wavelengths. The absorption wavelength range of the interstitial dimers covers the main solar spectrum and the two primary telecommunications wavelengths, which would make material become a high efficiency IB solar cell and promising silicon-based infrared photodetector.

Two-step photon up-conversion solar cells

Reducing the transmission loss for below-gap photons is a straightforward way to break the limit of the energy-conversion efficiency of solar cells (SCs). The up-conversion of below-gap photons is very promising for generating additional photocurrent. Here we propose a two-step photon up-conversion SC with a hetero-interface comprising different bandgaps of Al_0.3Ga_0.7As and GaAs. The below-gap photons for Al_0.3Ga_0.7As excite GaAs and generate electrons at the hetero-interface. The accumulated electrons at the hetero-interface are pumped upwards into the Al_0.3Ga_0.7As barrier by below-gap photons for GaAs. Efficient two-step photon up-conversion is achieved by introducing InAs quantum dots at the hetero-interface. We observe not only a dramatic increase in the additional photocurrent, which exceeds the reported values by approximately two orders of magnitude, but also an increase in the photovoltage. These results suggest that the two-step photon up-conversion SC has a high potential for implementation in the next-generation high-efficiency SCs.

Multicolor emission from intermediate band semiconductor ZnO1-xSex

Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E₋ and upper E₊ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.

Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires

Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (∼50-130 μeV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications.

Effect of scandium on the optical properties of crystalline silicon material

We have studied the optical properties of Sc-hyperdoped crystalline silicon based on quantum calculations. We have designed several probable configurations and found that the interstitial atomic positions of Sc (Sc_I, Sc_SI, Sc_TI, Sc_HI) are stable in the silicon matrix and can largely extend the absorption range of silicon from visible to infrared. The sub-band gap light absorption is attributed to the change of band structures of silicon and its intensity depends on the atomic concentration of Sc in silicon. The special effect of Sc on the properties of silicon will extend the sensitivity of silicon-based photodetectors to near infrared wavelength range.

The Influence of Oxygen Substitution on the Optoelectronic Properties of ZnTe

We communicate theoretical results of the structural, electronic, and optical properties ofZnOxTe1-x(0≤x≤1) in the zincblende structure. The calculations are performed using full potential linearized augmented plane waves (FP-LAPW) method, based on density functional theory (DFT). The structural properties are calculated with simple GGA (PBEsol), while the electronic and optical properties are calculated using mBJ-GGA. The mBJ-GGA is used to properly treat the active d-orbital in their valence shell. The ZnOTe alloy is highly lattice mismatched and consequently the lattice constants and bulk moduli largely deviate from the linear behavior. The calculated bandgaps are in agreement with the experimentally measured values, where the nature of bandgaps is direct for the whole range ofxexcept atx=0.25. We also calculate the bandgap bowing parameter from our accurate bandgaps and resolve the existing controversy in this parameter.

Fe/Co doped molybdenum diselenide: a promising two-dimensional intermediate-band photovoltaic material

An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe2 is a promising two-dimensional photovoltaic material.

Energy upconversion in GaP/GaNP core/shell nanowires for enhanced near-infrared light harvesting

Semiconductor nanowires (NWs) have recently gained increasing interest due to their great potential for photovoltaics. A novel material system based on GaNP NWs is considered to be highly suitable for applications in efficient multi-junction and intermediate band solar cells. This work shows that though the bandgap energies of GaN(x)P(1-x) alloys lie within the visible spectral range (i.e., within 540-650 nm for the currently achievable x < 3%), coaxial GaNP NWs grown on Si substrates can also harvest infrared light utilizing energy upconversion. This energy upconversion can be monitored via anti-Stokes near-band-edge photoluminescence (PL) from GaNP, visible even from a single NW. The dominant process responsible for this effect is identified as being due to two-step two-photon absorption (TS-TPA) via a deep level lying at about 1.28 eV above the valence band, based on the measured dependences of the anti-Stokes PL on excitation power and wavelength. The formation of the defect participating in the TS-TPA process is concluded to be promoted by nitrogen incorporation. The revealed defect-mediated TS-TPA process can boost efficiency of harvesting solar energy in GaNP NWs, beneficial for applications of this novel material system in third-generation photovoltaic devices.

Type II GaSb quantum ring solar cells under concentrated sunlight

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure

Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.

Size dependence of the dispersion relation for the interface state between NaCl(100) and Ag(111)

This study investigates the interface state electron dispersion relation between NaCl(100) islands and Ag(111) dependent upon NaCl island size. Both onset energy and effective mass are size dependent. However, these dependencies are relevant at different island sizes. We trace back this effective mass dependency to a misfit-induced strain based on atomically resolved images. Our results open up new avenues for the development of nanodevices by tuning the effective electron mass via strain of the insulating component.

Observation of an intermediate band in Sn-doped chalcopyrites with wide-spectrum solar response

Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS₂) and ~0.8 eV (CuInS₂) above the valance band maximum in the forbidden band gap. Diffuse reflection spectra and photoluminescence spectra reveal extra absorption and emission spectra induced by the IBs, which are further supported by first-principle calculations. Wide spectrum solar response greatly enhances photocatalysis, photovoltaics, and photo-induced hydrogen production due to the intermediate band.

Engineered nanomaterials for solar energy conversion

Understanding how to engineer nanomaterials for targeted solar-cell applications is the key to improving their efficiency and could lead to breakthroughs in their design. Proposed mechanisms for the conversion of solar energy to electricity are those exploiting the particle nature of light in conventional photovoltaic cells, and those using the collective electromagnetic nature, where light is captured by antennas and rectified. In both cases, engineered nanomaterials form the crucial components. Examples include arrays of semiconductor nanostructures as an intermediate band (so called intermediate band solar cells), semiconductor nanocrystals for multiple exciton generation, or, in antenna-rectifier cells, nanomaterials for effective optical frequency rectification. Here, we discuss the state of the art in p-n junction, intermediate band, multiple exciton generation, and antenna-rectifier solar cells. We provide a summary of how engineered nanomaterials have been used in these systems and a discussion of the open questions.

Insulator-to-metal transition in sulfur-doped silicon

We observe an insulator-to-metal transition in crystalline silicon doped with sulfur to nonequilibrium concentrations using ion implantation followed by pulsed-laser melting and rapid resolidification. This insulator-to-metal transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T>1.7  K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3×10(20)  cm(-3). Conduction in insulating samples is consistent with variable-range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon.

Scaling and localization lengths of a topologically disordered system

We consider a noninteracting disordered system designed to model particle diffusion, relaxation in glasses, and impurity bands of semiconductors. Disorder originates in the random spatial distribution of sites. We find strong numerical evidence that this model displays the same universal behavior as the standard Anderson model. We use finite-size scaling to find the localization length as a function of energy and density, including localized states away from the delocalization transition. Results at many energies all fit onto the same universal scaling curve.