Large conductance modulation of gold thin films by huge charge injection via electrochemical gating

Thin Film Resistance Gating by Redox Charge Exchange: Evidence for a Quantum Transition State

Field effect transistors (FETs) and related devices have enabled tremendous advances in electronics, as well as studies of fundamental phenomena. FETs are classically actuated as fields charge/discharge materials, thereby modifying their resistance. Here, we develop charge exchange transistors (CETs) that comprise thin films whose resistance is modified by quantum charge exchange processes, e.g., redox and bonding. We first use CETs to probe the metallocene-thin film interaction during cyclic voltammetry. Remarkably, CETs reveal transient resistance peaks associated with charge transfer during both oxidation and reduction. Our data combined with kinetics and density functional theory modeling are consistent with a multistep redox pathway, including the formation/destruction of a quantum transition state that overlaps molecule + thin film band states. As a further proof-of-principle demonstration, we also use CETs to monitor n-alkanethiol self-assembly on thin Au films in real-time. CETs exhibit monotonic resistance increase consistent with previously reported fast-then-slow kinetics attributed to thiol-thin film bond formation (charge localization) and etching and/or molecule reorganization.

Emulation of Synaptic Plasticity on a Cobalt-Based Synaptic Transistor for Neuromorphic Computing

Neuromorphic computing (NC), which emulates neural activities of the human brain, is considered for the low-power implementation of artificial intelligence. Toward realizing NC, fabrication, and investigations of hardware elements─such as synaptic devices and neurons─are crucial. Electrolyte gating has been widely used for conductance modulation by massive carrier injections and has proven to be an effective way of emulating biological synapses. Synaptic devices, in the form of synaptic transistors, have been studied using various materials. Despite the remarkable progress, the study of metallic channel-based synaptic transistors remains massively unexplored. Here, we demonstrated a three-terminal electrolyte gating-modulated synaptic transistor based on a metallic cobalt thin film to emulate biological synapses. We have realized gating-controlled, non-volatile, and distinct multilevel conductance states in the proposed device. The essential synaptic functions demonstrating both short-term and long-term plasticity have been emulated in the synaptic device. A transition from short-term to long-term memory has been realized by tuning the gate pulse parameters, such as amplitude and duration. The crucial cognitive behavior, including learning, forgetting, and re-learning, has been emulated, showing a resemblance to the human brain. Beyond that, dynamic filtering behavior has been experimentally implemented in the synaptic device. These results provide an insight into the design of metallic channel-based synaptic transistors for NC.

Electrostatic Field-Driven Supercurrent Suppression in Ionic-Gated Metallic Superconducting Nanotransistors

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to ∼45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.

Ionic gating in metallic superconductors: A brief review

Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface charge density by means of the electric-double-layer field-effect transistor (EDL-FET) architecture, and has been proven to be capable of tuning even the properties of metallic systems. In this short review, I summarize the main results which have been achieved so far in controlling the superconducting (SC) properties of thin films of conventional metallic superconductors by means of the ionic gating technique. I discuss how the gate-induced charge doping, despite being confined to a thin surface layer by electrostatic screening, results in a long-range ‘bulk’ modulation of the SC properties by the coherent nature of the SC condensate, as evidenced by the observation of suppressions in the critical temperature of films much thicker than the electrostatic screening length, and by the pronounced thickness-dependence of their magnitude. I review how this behavior can be modelled in terms of proximity effect between the charge-doped surface layer and the unperturbed bulk with different degrees of approximation, and how first-principles calculations have been employed to determine the origin of an anomalous increase in the electrostatic screening length at ultrahigh electric fields, thus fully confirming the validity of the proximity effect model. Finally, I discuss a general framework—based on the combination of ab-initio Density Functional Theory and the Migdal-Eliashberg theory of superconductivity—by which the properties of any gated thin film of a conventional metallic superconductor can be determined purely from first principles.

Giant near-field radiative heat transfer between ultrathin metallic films

Understanding energy transfer via near-field thermal radiation is essential for applications such as near-field imaging, thermophotovoltaics and thermal circuit devices. Evanescent waves and photon tunneling are responsible for the near-field energy transfer. In bulk noble metals, however, surface plasmons do not contribute efficiently to the near-field energy transfer because of the mismatch of wavelength. In this paper, a giant near-field radiative heat transfer rate that is orders-of-magnitude greater than the blackbody limit between two ultrathin metallic films is demonstrated at nanoscale separations. Moreover, different physical origins for near-field thermal radiation transfer for thick and thin metallic films are clarified, and the radiative heat transfer enhancement in ultrathin metallic films is proved to come from the excitation of surface plasmons. Meanwhile, because of the inevitable high sheet resistance of ultrathin metal films, the heat transfer coefficient is 4600 times greater than the Planckian limit for the separation of 10 nm in ultrathin metallic films, which is the same order or even greater than that in other 2D materials with low carrier density. Our work shows that ultrathin metallic films are excellent materials for radiative heat transfer, which may find promising applications in thermal nano-devices and thermal engineering.

Plasmonics in Atomically Thin Crystalline Silver Films

Light-matter interaction at the atomic scale rules fundamental phenomena such as photoemission and lasing while enabling basic everyday technologies, including photovoltaics and optical communications. In this context, plasmons, the collective electron oscillations in conducting materials, are important because they allow the manipulation of optical fields at the nanoscale. The advent of graphene and other two-dimensional crystals has pushed plasmons down to genuinely atomic dimensions, displaying appealing properties such as a large electrical tunability. However, plasmons in these materials are either too broad or lying at low frequencies, well below the technologically relevant near-infrared regime. Here, we demonstrate sharp near-infrared plasmons in lithographically patterned wafer-scale atomically thin silver crystalline films. Our measured optical spectra reveal narrow plasmons (quality factor of ∼4), further supported by a low sheet resistance comparable to bulk metal in few-atomic-layer silver films down to seven Ag(111) monolayers. Good crystal quality and plasmon narrowness are obtained despite the addition of a thin passivating dielectric, which renders our samples resilient to ambient conditions. The observation of spectrally sharp and strongly confined plasmons in atomically thin silver holds great potential for electro-optical modulation and optical sensing applications.

Proximity two bands Eliashberg theory of electrostatic field-effect doping in a superconducting film of MgB2

A key aspect of field effect experiments is the possibility to induce charges on the first layers of a sample as a function of an applied gate voltage. It is therefore possible to study correlated phases of matter as a function of the induced charge density and the applied electric field. Moreover, resulting charge modulation along the direction of the applied electric field gives rise to junctions between perturbed and uneffected regions of the sample. In the framework of proximity effect Eliashberg theory, we investigate the consequence of an applied static electric field on the transition temperature of a two-band s-wave superconductor magnesium diboride. In most cases the only free parameter in the theory is the penetration depth of the applied electric field, whereas there is no freedom when the static perturbation is sufficiently weak. We come to the conclusion that the optimal way to enhance the critical temperature is to have a very thin film of magnesium diboride, otherwise the external electric field would not have substantial effect on superconductivity in this material.

Multi-Valley Superconductivity in Ion-Gated MoS2 Layers

Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS₂, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multivalley Fermi surface (FS) is associated with the SC state, involving six electron pockets at Q/Q'. Here, we perform low-temperature transport measurements in ion-gated MoS₂ flakes. We show that a fully multivalley FS is associated with the SC onset. The Q/Q' valleys fill for doping ≳ 2 × 10¹³ cm^-2, and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q ₁ and Q ₂. The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.

Tunable inverse spin Hall effect in nanometer-thick platinum films by ionic gating

Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO₃, the paramagnet–ferromagnet transition in (In,Mn)As, and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such a degree of control even in metallic materials. Here, we show reversible modulation of up to two orders of magnitude of the inverse spin Hall effect—a phenomenon that governs interconversion between spin and charge currents—in ultrathin platinum. Spin-to-charge conversion enables the generation and use of electric and spin currents in the same device, which is crucial for the future of spintronics and electronics.

The ability to electrically control spintronic materials significantly widens their potential for integration into devices, but it is difficult to achieve in metals with high carrier densities. Here the authors demonstrate ionic liquid gated control of the inverse spin Hall effect in platinum.

Design and New Energy Application of Ionic Liquids

New electrochemical application using room-temperature ionic liquids (ILs) are introduced, such as lithium secondary batteries, electrochemical double layer capacitors, and novel types of electrical devices for sustainable and renewal energy society. ILs have so many combinations, owing to many cation/anion species. In this chapter, we introduce properties from fundamental (general and special physicochemical properties) to electrochemical applications of ILs. We also discuss importance of molecular design and application target of ILs.

Application of sodium-ion-based solid electrolyte in electrostatic tuning of carrier density in graphene

Using a solid electrolyte to tune the carrier density in thin-film materials is an emerging technique that has potential applications in both basic and applied research. Until now, only materials containing small ions, such as protons and lithium ions, have been used to demonstrate the gating effect. Here, we report the study of a lab-synthesised sodium-ion-based solid electrolyte, which shows a much stronger capability to tune the carrier density in graphene than previously reported lithium-ion-based solid electrolyte. Our findings may stimulate the search for solid electrolytes better suited for gating applications, taking benefit of many existing materials developed for battery research.

Conductivity Modulation of Gold Thin Film at Room Temperature via All-Solid-State Electric-Double-Layer Gating Accelerated by Nonlinear Ionic Transport

We demonstrated the field-effect conductivity modulation of a gold thin film by all-solid-state electric-double-layer (EDL) gating at room temperature using an epitaxially grown oxide fast lithium conductor, La_2/3-xLi_3xTiO₃ (LLT), as a solid electrolyte. The linearly increasing gold conductivity with increasing gate bias demonstrates that the conductivity modulation is indeed due to carrier injection by EDL gating. The response time becomes exponentially faster with increasing gate bias, a result of the onset of nonlinear ionic transportation. This nonlinear dynamic response indicates that the ionic motion-driven device can be much faster than would be estimated from a linear ionic transport model.

Lithium-ion-based solid electrolyte tuning of the carrier density in graphene

We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate. It can induce a change in the carrier density as large as 1 × 10¹⁴ cm⁻², which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, which is lower than the glass transition temperature of most liquid gating electrolytes.

Temperature dependence of electric transport in few-layer graphene under large charge doping induced by electrochemical gating

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8·10¹⁴ cm⁻² has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T² component – that can be associated with electron-electron scattering – and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly, this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy.

Iodide sensing via electrochemical etching of ultrathin gold films

Iodide is an essential element for humans and animals and insufficient intake is still a major problem. Affordable and accurate methods are required to quantify iodide concentrations in biological and environmental fluids. A simple and low cost sensing device is presented which is based on iodide induced electrochemical etching of ultrathin gold films. The sensitivity of resistance measurements to film thickness changes is increased by using films with a thickness smaller than the electron mean free path. The underlying mechanism is demonstrated by simultaneous cyclic voltammetry experiments and resistance change measurements in a buffer solution. Iodide sensing is conducted in buffer solutions as well as in lake water with limits of detection in the range of 1 μM (127 μg L(-1)) and 2 μM (254 μg L(-1)), respectively. In addition, nanoholes embedded in the thin films are tested for suitability of optical iodide sensing based on localized surface plasmon resonance.

Tunable charge transport in single-molecule junctions via electrolytic gating

We modulate the conductance of electrochemically inactive molecules in single-molecule junctions using an electrolytic gate to controllably tune the energy level alignment of the system. Molecular junctions that conduct through their highest occupied molecular orbital show a decrease in conductance when applying a positive electrochemical potential, and those that conduct though their lowest unoccupied molecular orbital show the opposite trend. We fit the experimentally measured conductance data as a function of gate voltage with a Lorentzian function and find the fitting parameters to be in quantitative agreement with self-energy corrected density functional theory calculations of transmission probability across single-molecule junctions. This work shows that electrochemical gating can directly modulate the alignment of the conducting orbital relative to the metal Fermi energy, thereby changing the junction transport properties.

Electrically tunable anomalous Hall effect in Pt thin films

Pt is often considered to be an exchange-enhanced paramagnetic material, in which the Stoner criterion for ferromagnetism is nearly satisfied and, thus, external stimuli may induce unconventional magnetic characteristics. We report that a nonmagnetic perturbation in the form of a gate voltage applied via an ionic liquid induces an anomalous Hall effect (AHE) in Pt thin films, which resembles the AHE induced by the contact to Bi-doped yttrium iron garnet. Analysis of detailed temperature and magnetic field experiments indicates that the evolution of the AHE with temperature can be explained in terms of large local moments; the applied electric field induces magnetic moments as large as ~10 μ(B) that follow the Langevin function.