Photon-assisted tunneling through self-assembled InAs quantum dots in the terahertz frequency range

Carbon nanotube-based, serially connected terahertz sensor with enhanced thermal and optical efficiencies

Owing to their high thermal and optical performances, carbon nanotube (CNT) films are used in various photo-thermo-electric (PTE) applications, such as terahertz (THz) sensing and energy harvesting. To improve the performance of PTE devices, a device structure should be designed based on a deep understanding of the thermal and optical responses of the CNT film. However, the optical properties of CNT films in the THz frequency region remain unclear because of the difficulties associated with device processing and measurements. Herein, we report our findings on the thermal and optical characteristics of CNT films. The shape of the CNT film that maximizes the product of the thermal and optical factors (optimal structure of the PTE sensor) depends on the frequency of the irradiating electromagnetic wave. The optimal film thickness and width values for THz irradiation range from 300-600 nm and 50-70 µm, respectively. Subsequently, we fabricated a serially connected, multi-element PTE sensor with an optimal device structure and enhanced the detection sensitivity by approximately 13 times compared with a single-element PTE sensor. In addition, we demonstrated the first THz spectroscopy application using a PTE sensor. The findings of this study, thermal/optical factor enhancement, and micro-sized CNT film processing technology can be used to improve the performance of all CNT-based photothermal devices, including PTE sensors and thermoelectric generators.

Bond-Selected Photodissociation of Single Molecules Adsorbed on Metal Surfaces

We report the photoassisted activation of selected C─H bonds in individual molecules adsorbed on metal surfaces within the junction of a scanning tunneling microscope. Photons can couple to the C─H bond activation of specific hydrocarbons through a resonant photoassisted tunneling process. The molecule to be activated can be selected by positioning the tip with subangstrom resolution. Furthermore, structural tomography of the molecule and its dissociation products are imaged at different heights by the inelastic tunneling probe. The demonstration of single bond dissociation induced by resonant photoassisted tunneling electrons implies the attainment of atomic scale spatial resolution for bond-selected photochemistry.

Single-electron charge sensing in self-assembled quantum dots

Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon–electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots.

Optomechanical terahertz detection with single meta-atom resonator

Most of the common technologies for detecting terahertz photons (>1 THz) at room temperature rely on slow thermal devices. The realization of fast and sensitive detectors in this frequency range is indeed a notoriously difficult task. Here we propose a novel device consisting of a subwavelength terahertz meta-atom resonator, which integrates a nanomechanical element and allows energy exchange between the mechanical motion and the electromagnetic degrees of freedom. An incident terahertz wave thus produces a nanomechanical signal that can be read out optically with high precision. We exploit this concept to demonstrate a terahertz detector that operates at room temperature with high sensitivity and a much higher frequency response compared to standard detectors. Beyond the technological issue of terahertz detection, our architecture opens up new perspectives for fundamental science of light–matter interaction at terahertz frequencies, combining optomechanical approaches with semiconductor quantum heterostructures.

Achieving fast, sensitive and room temperature detection of terahertz waves remains a formidable scientific and technological challenge. Here, the authors propose a compact terahertz device combining concepts from metamaterial resonators, optomechanics and semiconductor nanotechnology.

Control of the Oscillatory Interlayer Exchange Interaction with Terahertz Radiation

The oscillatory interlayer exchange interaction between two magnetic layers separated by a metallic spacer is one of the few coherent quantum phenomena that persists at room temperature. Here, we show that this interaction can be controlled dynamically by illuminating the sample (e.g., a spin valve) with radiation in the 10-100 THz range. We predict that the exchange interaction can be changed from ferromagnetic to antiferromagnetic (and vice versa) by tuning the amplitude and/or the frequency of the radiation. Our chief theoretical result is an expression that relates the dynamical exchange interaction to the static one that has already been extensively measured.

Competition of static magnetic and dynamic photon forces in electronic transport through a quantum dot

We investigate theoretically the balance of the static magnetic and the dynamical photon forces in the electron transport through a quantum dot in a photon cavity with a single photon mode. The quantum dot system is connected to external leads and the total system is exposed to a static perpendicular magnetic field. We explore the transport characteristics through the system by tuning the ratio, [Formula: see text], between the photon energy, [Formula: see text], and the cyclotron energy, [Formula: see text]. Enhancement in the electron transport with increasing electron-photon coupling is observed when [Formula: see text]. In this case the photon field dominates and stretches the electron charge distribution in the quantum dot, extending it towards the contact area for the leads. Suppression in the electron transport is found when [Formula: see text], as the external magnetic field causes circular confinement of the charge density around the dot.

Tunnelling current-voltage characteristics of Angstrom gaps measured with terahertz time-domain spectroscopy

Quantum tunnelling becomes inevitable as gap dimensions in metal structures approach the atomic length scale, and light passing through these gaps can be used to examine the quantum processes at optical frequencies. Here, we report on the measurement of the tunnelling current through a 3-Å-wide metal-graphene-metal gap using terahertz time-domain spectroscopy. By analysing the waveforms of the incident and transmitted terahertz pulses, we obtain the tunnelling resistivity and the time evolution of the induced current and electric fields in the gap and show that the ratio of the applied voltage to the tunnelling current is constant, i.e., the gap shows ohmic behaviour for the strength of the incident electric field up to 30 kV/cm. We further show that our method can be extended and applied to different types of nanogap tunnel junctions using suitable equivalent RLC circuits for the corresponding structures by taking an array of ring-shaped nanoslots as an example.

Photon-Assisted Shot Noise in Graphene in the Terahertz Range

When subjected to electromagnetic radiation, the fluctuation of the electronic current across a quantum conductor increases. This additional noise, called photon-assisted shot noise, arises from the generation and subsequent partition of electron-hole pairs in the conductor. The physics of photon-assisted shot noise has been thoroughly investigated at microwave frequencies up to 20 GHz, and its robustness suggests that it could be extended to the terahertz (THz) range. Here, we present measurements of the quantum shot noise generated in a graphene nanoribbon subjected to a THz radiation. Our results show signatures of photon-assisted shot noise, further demonstrating that hallmark time-dependant quantum transport phenomena can be transposed to the THz range.

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

Colloidal semiconductor nanocrystals become increasingly important in materials science and technology, due to their optoelectronic properties that are tunable by size. The measurement and understanding of their energy levels is key to scientific and technological progress. Here we review how the confined electronic orbitals and related energy levels of individual semiconductor quantum dots have been measured by means of scanning tunneling microscopy and spectroscopy. These techniques were originally developed for flat conducting surfaces, but they have been adapted to investigate the atomic and electronic structure of semiconductor quantum dots. We compare the results obtained on colloidal quantum dots with those on comparable solid-state ones. We also compare the results obtained with scanning tunneling spectroscopy with those of optical spectroscopy. The first three sections provide an introduction to colloidal quantum dots, and a theoretical basis to be able to understand tunneling spectroscopy on dots attached to a conducting surface. In sections 4 and 5 , we review the work performed on lead-chalcogenide nanocrystals and on colloidal quantum dots and rods of II-VI compounds, respectively. In section 6 , we deal with colloidal III-V nanocrystals and compare the results with their self-assembled counter parts. In section 7 , we review the work on other types of semiconductor quantum dots, especially on Si and Ge nanocrystals.

Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime

Quantum tunneling in plasmonic nanostructures has presented an interesting aspect of incorporating quantum mechanics into classical optics. However, the study has been limited to the subnanometer gap regime. Here, we newly extend quantum plasmonics to gap widths well over 1 nm by taking advantage of the low-frequency terahertz regime. Enhanced electric fields of up to 5 V/nm induce tunneling of electrons in different arrays of ring-shaped nanoslot antennas of gap widths from 1.5 to 10 nm, which lead to a significant nonlinear transmission decrease. These observations are consistent with theoretical calculations considering terahertz-funneling-induced electron tunneling across the gap.

Terahertz Field Enhancement and Photon-Assisted Tunneling in Single-Molecule Transistors

We have investigated the electron transport in single-C_{60}-molecule transistors under the illumination of intense monochromatic terahertz (THz) radiation. By employing an antenna structure with a sub-nm-wide gap, we concentrate THz radiation beyond the diffraction limit and focus it onto a single molecule. Photon-assisted tunneling (PAT) in the single molecule transistors is observed in both the weak-coupling and Kondo regimes. The THz power dependence of the PAT conductance indicates that when the incident THz intensity is a few tens of mW, the THz field induced at the molecule exceeds 100  kV/cm, which is enhanced by a factor of ~10^{5} from the field in the free space.

Electromagnetic Saturation of Angstrom-Sized Quantum Barriers at Terahertz Frequencies

Metal-graphene-metal hybrid structures allow angstrom-scale van der Waals gaps, across which electron tunneling occurs. We squeeze terahertz electromagnetic waves through these λ/10 000 000 gaps, accompanied by giant field enhancements. Unprecedented transmission reduction of 97% is achieved with the transient voltage across the gap saturating at 5 V. Electron tunneling facilitated by the transient electric field strongly modifies the gap index, starting a self-limiting process related to the barrier height. Our work enables greater interplay between classical optics and quantum tunneling, and provides optical indices to the van der Waals gaps.

Photon exchange and entanglement formation during transmission through a rectangular quantum barrier

When a quantum particle traverses a rectangular potential created by a quantum field both photon exchange and entanglement between particle and field take place. We present the full analytic solution of the Schrödinger equation of the composite particle-field system allowing investigation of these phenomena in detail and comparison to the results of a classical field treatment. Besides entanglement formation, remarkable differences also appear with respect to the symmetry between energy emission and absorption, resonance effects and if the field initially occupies the vacuum state.

Terahertz intersublevel transitions in single self-assembled InAs quantum dots with variable electron numbers

We propose a method for performing terahertz spectroscopy on nanometer (nm)-scale systems by using metal nanogap electrodes. Intersublevel transition spectra of single self-assembled InAs quantum dots (QDs) have been measured with high signal/noise ratios by using a single electron transistor geometry that consists of a QD and nanogap metal electrodes as a terahertz detector. Photocurrent distribution with respect to the Coulomb diamonds indicates that there are two mechanisms for the photocurrent generation. When the p shell was fully occupied, we observed rather simple photocurrent spectra induced by the p → d transitions. However, when the p shell was half-filled, the photocurrent spectra exhibited a markedly different behavior, which we attribute to the fluctuation in electron configuration when the empty p state is filled back from the electrodes.

Large modulation of zero-dimensional electronic states in quantum dots by electric-double-layer gating

Electrical manipulation and read-out of quantum states in zero-dimensional nanostructures by nano-gap metal electrodes is expected to bring about innovation in quantum information processing. However, electrical tunability of the quantum states in zero-dimensional nanostructures is limited by the screening of gate electric fields. Here we demonstrate a new way to realize wide-range electrical modulation of quantum states of single self-assembled InAs quantum dots (QDs) with a liquid-gated electric-double-layer (EDL) transistor geometry. The efficiency of EDL gating is 6-90 times higher than that of the conventional solid gating. The quantized energy level spacing is modulated from ~15 to ~25 meV, and the electron g-factor is electrically tuned over a wide range. Such a field effect tuning can be explained by the modulation in the confinement potential of electrons in the QDs. The EDL gating on the QDs also provides potential compatibility with optical manipulation of single-electron charge/spin states.

Electron transport through a quantum dot assisted by cavity photons

We investigate transient transport of electrons through a single quantum dot controlled by a plunger gate. The dot is embedded in a finite wire with length Lx assumed to lie along the x-direction with a parabolic confinement in the y-direction. The quantum wire, originally with hard-wall confinement at its ends, ±Lx/2, is weakly coupled at t = 0 to left and right leads acting as external electron reservoirs. The central system, the dot and the finite wire, is strongly coupled to a single cavity photon mode. A non-Markovian density-matrix formalism is employed to take into account the full electron-photon interaction in the transient regime. In the absence of a photon cavity, a resonant current peak can be found by tuning the plunger-gate voltage to lift a many-body state of the system into the source-drain bias window. In the presence of an x-polarized photon field, additional side peaks can be found due to photon-assisted transport. By appropriately tuning the plunger-gate voltage, the electrons in the left lead are allowed to undergo coherent inelastic scattering to a two-photon state above the bias window if initially one photon was present in the cavity. However, this photon-assisted feature is suppressed in the case of a y-polarized photon field due to the anisotropy of our system caused by its geometry.