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Zhang T, Yi L, Huang J, Zhang Y, Xu Y, Liu M, He X, Pan L. The effect of quenching and Mn substitution for Ni on the magnetic properties of Mn 25+xNi 50-xGa 25. Phys Chem Chem Phys 2023; 25:27364-27372. [PMID: 37791972 DOI: 10.1039/d3cp02341a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
Ni-Mn based Heusler alloys have attracted widespread attention due to their novel physical properties. However, the structure of Mn2NiGa is metastable at room temperature, making it difficult to obtain its intrinsic physical properties and limiting its application. In this study, we obtained Mn2NiGa by replacing Ni in the precursor alloy Ni2MnGa with Mn and studied its magnetic properties, structures, and phase transitions with floating composition. In addition, we focused on the compositional segregation characteristics of Mn2NiGa caused by different heat treatment and quenching conditions. It was found that the samples quenched after annealing at 773 K for 48 hours exhibited abnormalities in magnetism, phase transformation, and structure. The further electron probe scanning characterization results reveal that the changes in these physical properties were related to component segregation caused by heat treatment.
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Affiliation(s)
- Tianfeng Zhang
- Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China.
| | - Lizhi Yi
- Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China.
| | - Jiaohong Huang
- State Key Laboratory of Baiyunobo Rare Earth Resource Researches and Comprehensive Utilization, Baotou Research Institute of Rare Earths, Baotou, 014030, China
| | - Yingde Zhang
- State Key Laboratory of Baiyunobo Rare Earth Resource Researches and Comprehensive Utilization, Baotou Research Institute of Rare Earths, Baotou, 014030, China
| | - Yunli Xu
- Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China.
| | - Ming Liu
- Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China.
| | - Xiong He
- Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China.
| | - Liqing Pan
- Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China.
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Sarkar S, Bhattacharya J, Sadhukhan P, Curcio D, Dutt R, Singh VK, Bianchi M, Pariari A, Roy S, Mandal P, Das T, Hofmann P, Chakrabarti A, Roy Barman S. Charge density wave induced nodal lines in LaTe 3. Nat Commun 2023; 14:3628. [PMID: 37336909 DOI: 10.1038/s41467-023-39271-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 05/30/2023] [Indexed: 06/21/2023] Open
Abstract
LaTe3 is a non-centrosymmetric material with time reversal symmetry, where the charge density wave is hosted by the Te bilayers. Here, we show that LaTe3 hosts a Kramers nodal line-a twofold degenerate nodal line connecting time reversal-invariant momenta. We use angle-resolved photoemission spectroscopy, density functional theory with an experimentally reported modulated structure, effective band structures calculated by band unfolding, and symmetry arguments to reveal the Kramers nodal line. Furthermore, calculations confirm that the nodal line imposes gapless crossings between the bilayer-split charge density wave-induced shadow bands and the main bands. In excellent agreement with the calculations, spectroscopic data confirm the presence of the Kramers nodal line and show that the crossings traverse the Fermi level. Furthermore, spinless nodal lines-completely gapped out by spin-orbit coupling-are formed by the linear crossings of the shadow and main bands with a high Fermi velocity.
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Affiliation(s)
- Shuvam Sarkar
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, Madhya Pradesh, India
| | - Joydipto Bhattacharya
- Theory and Simulations Laboratory, Raja Ramanna Centre for Advanced Technology, Indore, 452013, Madhya Pradesh, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, Maharashtra, India
| | - Pampa Sadhukhan
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, Madhya Pradesh, India
| | - Davide Curcio
- Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, 8000, Denmark
| | - Rajeev Dutt
- Theory and Simulations Laboratory, Raja Ramanna Centre for Advanced Technology, Indore, 452013, Madhya Pradesh, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, Maharashtra, India
| | - Vipin Kumar Singh
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, Madhya Pradesh, India
| | - Marco Bianchi
- Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, 8000, Denmark
| | - Arnab Pariari
- Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata, 700064, India
| | - Shubhankar Roy
- Vidyasagar Metropolitan College, 39, Sankar Ghosh Lane, Kolkata, 700006, India
| | - Prabhat Mandal
- Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata, 700064, India
| | - Tanmoy Das
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Philip Hofmann
- Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, 8000, Denmark
| | - Aparna Chakrabarti
- Theory and Simulations Laboratory, Raja Ramanna Centre for Advanced Technology, Indore, 452013, Madhya Pradesh, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, Maharashtra, India
| | - Sudipta Roy Barman
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, Madhya Pradesh, India.
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Ye X, Zhu X, Yang H, Duan J, Gao S, Sun C, Liu X, Li RW. Selective Dual-Ion Modulation in Solid-State Magnetoelectric Heterojunctions for In-Memory Encryption. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206824. [PMID: 36683213 DOI: 10.1002/smll.202206824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2022] [Revised: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Nanoionic technologies are identified as a promising approach to modulating the physical properties of solid-state dielectrics, which have resulted in various emergent nanodevices, such as nanoionic resistive switching devices and magnetoionic devices for memory and computing applications. Previous studies are limited to single-type ion manipulation, and the investigation of multiple-type ion modulation on the coupled magnetoelectric effects, for developing information devices with multiple integrated functionalities, remains elusive. Here, a dual-ion solid-state magnetoelectric heterojunction based on Pt/HfO2- x /NiOy /Ni with reconfigurable magnetoresistance (MR) characteristics is reported for in-memory encryption. It is shown that the oxygen anions and nickel cations can be selectively driven by voltages with controlled polarity and intensity, which concurrently change the overall electrical resistance and the interfacial magnetic coupling, thus significantly modulate the MR symmetry. Based on this device, a magnetoelectric memory prototype array with in-memory encryption functionality is designed for the secure storage of image and digit information. Along with the advantages including simple structure, multistate encryption, good reversibility, and nonvolatile modulation capability, this proof-of-concept device opens new avenues toward next-generation compact electronics with integrated information functionalities.
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Affiliation(s)
- Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Jipeng Duan
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Gao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
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Seyd J, Pilottek I, Schmidt NY, Caha O, Urbánek M, Albrecht M. Mn 3Ge-based tetragonal Heusler alloy thin films with addition of Ni, Pt, and Pd. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:145801. [PMID: 31791025 DOI: 10.1088/1361-648x/ab5e16] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We have investigated substitution effects of Ni, Pt, and Pd on phase formation and magnetic properties of D022-Mn3Ge thin films. We prepared (Mn1-x M x )3Ge thin films (M = Ni, Pt, Pd) at 650 °C by magnetron sputtering on MgO(0 0 1) substrates with x varying from 0.03 to 0.6. For improving the film quality, a Cr(0 0 1) seed layer was employed. The D022 structure formed only for the lowest concentrations of Ni and Pt. Nevertheless, the doped samples showed strong perpendicular magnetic anisotropy up to x = 0.1. For high Ni concentrations, we observed the formation of a soft ferromagnetic Mn x Ni y Ge phase with a Curie temperature of about 230 K, while in samples with high Pt content the antiferromagnet L10-MnPt phase is formed along with GePt. In contrast, for Pd substitution, the D022 structure is preserved up to x = 0.2, exhibiting strong perpendicular magnetic anisotropy and low saturation magnetization. Interestingly, the coexistence of the D022-Mn3Ge and a novel D022-(Mn1-x Pd x )3Ge phase was revealed, which might have been facilitated by the low lattice mismatch to the Cr(0 0 1) seed layer. With further increase of the Pd concentration, the D022 structure vanishes and mainly the GePd and GePd2 phases are present. Overall within the investigated sample series, the saturation magnetization strongly decreases with increasing dopant concentration, offering the possibility to adjust the saturation magnetization in the range between 20 and 100 emu cm-3, while still preserving strong perpendicular magnetic anisotropy, which is important for spintronic applications.
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Affiliation(s)
- J Seyd
- Institute of Physics, University of Augsburg, D-86159 Augsburg, Germany
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Exotic magnetic behaviour and evidence of cluster glass and Griffiths like phase in Heusler alloys Fe 2-xMn xCrAl (0 ≤ x ≤ 1). Sci Rep 2019; 9:15888. [PMID: 31685883 PMCID: PMC6828798 DOI: 10.1038/s41598-019-52452-7] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2019] [Accepted: 10/17/2019] [Indexed: 11/18/2022] Open
Abstract
We present a detailed study of structural, magnetic and thermodynamic properties of a series of Heusler alloys Fe2-xMnxCrAl (x = 0, 0.25, 0.5, 0.75 and 1). Structural investigation of this series is carried out using high resolution synchrotron X-ray diffraction. Results suggest that with increasing Mn concentration, the L21 structure of Fe2CrAl is destabilized. The DC magnetization results show a decrement in paramagnetic (PM) to ferromagnetic (FM) phase transition temperature (TC) with increasing Mn concentration. From the systematic analysis of magnetic memory effect, heat capacity, time dependent magnetization, and DC field dependent AC susceptibility studies it is observed that, Fe2CrAl exhibits cluster glass(CG)-like transition approximately at 3.9 K (Tf2). The alloys, Fe1.75Mn0.25CrAl and Fe1.5Mn0.5CrAl exhibit double CG-like transitions near Tf1 ~ 22 K, Tf2 ~ 4.2 K and Tf1 ~ 30.4 K, Tf2 ~ 9.5 K respectively, however, in Fe1.25Mn0.75CrAl, a single CG-like transition is noted at Tf2 ~ 11.5 K below TC. Interestingly, FeMnCrAl shows the absence of long ranged magnetic ordering and this alloy undergoes three CG-like transitions at ~22 K (Tf*), 16.6 K (Tf1) and 11 K (Tf2). At high temperatures, a detailed analysis of temperature response of inverse DC susceptibility clearly reveals the observation of Griffiths phase (GP) above 300 K (T*) in Fe2CrAl and this phase persists with Mn concentration with a decrement in T*.
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Xiao W, Song W, Herng TS, Qin Q, Yang Y, Zheng M, Hong X, Feng YP, Ding J. Novel room-temperature spin-valve-like magnetoresistance in magnetically coupled nano-column Fe3O4/Ni heterostructure. NANOSCALE 2016; 8:15737-15743. [PMID: 27526860 DOI: 10.1039/c6nr04805f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Herein, we design a room-temperature spin-valve-like magnetoresistance in a nano-column Fe3O4/Ni heterostructure without using a non-magnetic spacer or pinning layer. An Fe3O4 nano-column film is self-assembled on a Ni underlayer by the thermal decomposition method. The wet-chemical self-assembly is facile, economical and scalable. The magnetoresistance (MR) response of the Ni underlayer in the heterostructure under positive and negative out-of-plane magnetic fields differ by ∼0.25 at room temperature and ∼0.43 at 100 K. We attribute the spin-valve-like magnetoresistance to the unidirectional magnetic anisotropy of the Ni underlayer when being magnetically coupled by the Fe3O4 nano-column film. The out-of-plane negative-field magnetization is higher than the positive-field magnetization, affirming the unidirectional magnetic anisotropy of the Fe3O4/Ni heterostructure. Temperature-dependent magnetic and resistivity studies illustrate a close correlation between the magnetization transition of Fe3O4 and resistivity transition of Ni and prove a magnetic coupling between the Fe3O4 and Ni. First-principles calculations reveal that the Fe3O4/Ni model under a negative magnetic field is energetically more stable than that under a positive magnetic field. Furthermore, partial density of states (PDOS) analysis demonstrates the unidirectional magnetic anisotropy of the Ni 3d orbital. This is induced by the strong ferromagnetic coupling between Fe3O4 and Ni via oxygen-mediated Fe 3d-O 2p-Ni 3d hybridizations.
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Affiliation(s)
- Wen Xiao
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore. and Data Storage Institute, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-01 Innovis, Singapore 138634, Singapore
| | - Wendong Song
- Data Storage Institute, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-01 Innovis, Singapore 138634, Singapore
| | - Tun Seng Herng
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
| | - Qing Qin
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore. and Data Storage Institute, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-01 Innovis, Singapore 138634, Singapore
| | - Yong Yang
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
| | - Ming Zheng
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
| | - Xiaoliang Hong
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Jun Ding
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
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Singh S, Caron L, D'Souza SW, Fichtner T, Porcari G, Fabbrici S, Shekhar C, Chadov S, Solzi M, Felser C. Large Magnetization and Reversible Magnetocaloric Effect at the Second-Order Magnetic Transition in Heusler Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:3321-3325. [PMID: 26928954 DOI: 10.1002/adma.201505571] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2015] [Revised: 12/23/2015] [Indexed: 06/05/2023]
Abstract
In contrast to rare-earth-based materials, cheaper and more environmentally friendly candidates for cooling applications are found within the family of Ni-Mn Heusler alloys. Initial interest in these materials is focused on the first-order magnetostructural transitions. However, large hysteresis makes a magnetocaloric cycle irreversible. Alternatively, here it is shown how the Heusler family can be used to optimize reversible second-order magnetic phase transitions for magnetocaloric applications.
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Affiliation(s)
- Sanjay Singh
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
| | - Luana Caron
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
| | - Sunil Wilfred D'Souza
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
| | - Tina Fichtner
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
| | - Giacomo Porcari
- Department of Physics and Earth Sciences, Parma University, Viale G.P., Usberti n.7/A (Parco Area delle Scienze), 43124, Parma, Italy
| | - Simone Fabbrici
- IMEM-CNR, Parco Area delle Scienze 37/A, 43124, Parma, Italy
| | - Chandra Shekhar
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
| | - Stanislav Chadov
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
| | - Massimo Solzi
- Department of Physics and Earth Sciences, Parma University, Viale G.P., Usberti n.7/A (Parco Area delle Scienze), 43124, Parma, Italy
| | - Claudia Felser
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
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Mydosh JA. Spin glasses: redux: an updated experimental/materials survey. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2015; 78:052501. [PMID: 25872613 DOI: 10.1088/0034-4885/78/5/052501] [Citation(s) in RCA: 49] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
This article reviews the 40+ year old spin-glass field and one of its earliest model interpretations as a spin density wave. Our description is from an experimental phenomenological point of view with emphasis on new spin glass materials and their relation to topical problems and strongly correlated materials in condensed matter physics. We first simply define a spin glass (SG), give its basic ingredients and explain how the spin glasses enter into the statistical mechanics of classical phase transitions. We then consider the four basic experimental properties to solidly characterize canonical spin glass behavior and introduce the early theories and models. Here the spin density wave (SDW) concept is used to explain the difference between a short-range SDW, i.e. a SG and, in contrast, a long-range SDW, i.e. a conventional magnetic phase transition. We continue with the present state of SG, its massive computer simulations and recent proposals of chiral glasses and quantum SG. We then collect and mention the various SG 'spin-off's'. A major section uncovers the fashionable unconventional materials that display SG-like freezing and glassy ground states, such as (high temperature) superconductors, heavy fermions, intermetallics and Heuslers, pyrochlor and spinels, oxides and chalogenides and exotics, e.g. quasicrystals. Some conclusions and future directions complete the review.
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Affiliation(s)
- J A Mydosh
- Kamerlingh Onnes Laboratory and Institute Lorentz, Leiden University, PO Box 9504, 2300RA Leiden, The Netherlands
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D'Souza SW, Roy T, Barman SR, Chakrabarti A. Magnetic properties and electronic structure of Mn-Ni-Ga magnetic shape memory alloys. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:506001. [PMID: 25419566 DOI: 10.1088/0953-8984/26/50/506001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Influence of disorder, antisite defects, martensite transition and compositional variation on the magnetic properties and electronic structure of Mn(2)NiGa and Mn(1+x)Ni(2-x)Ga magnetic shape memory alloys have been studied by using full potential spin-polarized scalar relativistic Korringa-Kohn-Rostocker (FP-SPRKKR) method. Mn(2)NiGa is ferrimagnetic and its total spin moment increases when disorder in the occupancy of MnNi (Mn atom in Ni position) is considered. The moment further increases when Mn-Ga antisite defect [1] is included in the calculation. A reasonable estimate of TC for Mn(2)NiGa is obtained from the exchange parameters for the disordered structure. Disorder influences the electronic structure of Mn(2)NiGa through overall broadening of the density of states and a decrease in the exchange splitting. Inclusion of antisite defects marginally broaden the minority spin partial DOS (PDOS), while the majority spin PDOS is hardly affected. For Mn(1+x)Ni(2-x)Ga where 1 ⩾ x ⩾ 0, as x decreases, Mn(Mn) moment increases while Mn(Ni) moment decreases in both austenite and martensite phases. For x ⩾ 0.25, the total moment of the martensite phase is smaller compared to the austenite phase, which indicates possible occurrence of inverse magnetocaloric effect. We find that the redistribution of Ni 3d- Mn(Ni) 3d minority spin electron states close to the Fermi level is primarily responsible for the stability of the martensite phase in Mn-Ni-Ga.
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Affiliation(s)
- Sunil Wilfred D'Souza
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Near IT Park, University Campus, Indore, Madhya Pradesh 452001,India
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