High-pressure core structures of Si nanoparticles for solar energy conversion

The effect of particle size on the optical and electronic properties of hydrogenated silicon nanoparticles

We use a combination of many-body perturbation theory and time-dependent density functional theory to study the optical and electronic properties of hydrogen terminated silicon nanoparticles. We predict that the lowest excited states of these silicon nanoparticles are excitonic in character and that the corresponding excitons are completely delocalised over the volume of the particle. The size of the excitons is predicted to increase proportionally with the particle size. Conversely, we predict that the fundamental gap, the optical gap, and the exciton binding energy increase with decreasing particle size. The exciton binding energy is predicted to counter-act the variation in the fundamental gap and hence to reduce the variation of the optical gap with particle size. The variation in the exciton binding energy itself is probably caused by a reduction in the dielectric screening with decreasing particle size. The intensity of the excited state corresponding to the optical gap and other low energy excitations are predicted to increase with decreasing particle size. We explain this increase in terms of the 'band structure' becoming smeared out in reciprocal space with decreasing particle size, increasing the 'overlap' between the occupied and unoccupied quasiparticle states and thus, the oscillator strength. Fourier transforms of the lowest excitons show that they inherit the periodicity of the frontier quasiparticle states. This, combined with the delocalisation of the exciton and the large exciton binding energy, means that the excitons in silicon nanoparticles combine aspects of Wannier-Mott, delocalisation and effect of periodicity of the underlying structure, and Frenkel, large exciton binding energy, excitons.

Size-dependent effects of the thermal transport at gold nanoparticle-water interfaces

The transfer of heat from a plasmonic nanoparticle to its water environment has numerous applications in the fields of solar energy conversion and photothermal therapies. We use non-equilibrium molecular dynamics to investigate the size-dependent effects of the interfacial thermal conductance of gold nanoparticles immersed in water and of tunable wettability. The interfacial thermal conductance is found to increase when the nanoparticle size decreases. We rationalize such a behavior with a generalized acoustic model, where the interfacial bonding decreases with the nanoparticle size. The analysis of the interfacial thermal spectrum reveals the importance of the low frequency peak of the nanoparticle spectrum as it matches relatively well the oxygen peak in the vibrational spectrum. However, by reducing the nanoparticle size, the low frequency peak is exacerbated, explaining the enhanced heat transfer observed for small nanoparticles. Finally, we assess the accuracy of continuum heat transferequations to describe the thermal relaxation of small nanoparticles with initial high temperatures.We show that, before the nanoparticle looses its integrity, the continuum model succeed in describing with small percentage deviations the molecular-dynamics data. This work brings a simple methodology to understand, beyond the plasmonic nanoparticles, thermal boundary conductance between a nanopartice and its environment.

Multiple exciton generation in isolated and interacting silicon nanocrystals

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems. For optimal energy conversion in photovoltaic devices, one important requirement is that the full energy of the solar spectrum is effectively used. In this context, the possibility of exploiting features and functionalities induced by the reduced dimensionality of the nanocrystalline phase, in particular by the quantum confinement of the electronic density, can lead to a better use of the carrier excess energy and thus to an increment of the thermodynamic conversion efficiency of the system. Carrier multiplication, i.e. the generation of multiple electron-hole pairs after absorption of one single high-energy photon (with energy at least twice the energy gap of the system), can be exploited to maximize cell performance, promoting a net reduction of loss mechanisms. Over the past fifteen years, carrier multiplication has been recorded in a large variety of semiconductor nanocrystals and other nanostructures. Owing to the role of silicon in solar cell applications, the mission of this review is to summarize the progress in this fascinating research field considering carrier multiplication in Si-based low-dimensional systems, in particular Si nanocrystals, both from the experimental and theoretical point of view, with special attention given to the results obtained by ab initio calculations.

A Review on Metastable Silicon Allotropes

Diamond cubic silicon is widely used for electronic applications, integrated circuits, and photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical properties. However, it is a semiconductor with an indirect band gap, depriving its further development. Fortunately, other polymorphs of silicon have been discovered successfully, and new functional allotropes are continuing to emerge, some of which are even stable in ambient conditions and could form the basis for the next revolution in electronics, stored energy, and optoelectronics. Such structures can lead to some excellent features, including a wide range of direct or quasi-direct band gaps allowed efficient for photoelectric conversion (examples include Si-III and Si-IV), as well as a smaller volume expansion as lithium-battery anode material (such as Si₂₄, Si₄₆, and Si₁₃₆). This review aims to give a detailed overview of these exciting new properties and routes for the synthesis of novel Si allotropes. Lastly, the key problems and the developmental trends are put forward at the end of this article.

Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures

Silicon has several technologically promising allotropes that are formed via high-pressure synthesis. One of these phases (hd) has been predicted to have a direct band gap under tensile strain, whereas other (r8 and bc8) phases are predicted to have narrow band gaps and good absorption across the solar spectrum. Pure volumes of these phases cannot be made using conventional nanowire growth techniques. In this work, Si nanowires were compressed up to ∼20 GPa and then decompressed using a diamond anvil cell in the temperature range of 25-165 °C. It was found that at intermediate temperatures, near-phase-pure bc8-Si nanowires were produced, whereas amorphous Si (a-Si) dominated at lower temperatures, and a direct transformation to the diamond cubic phase (dc-Si) occurred at higher temperatures under compression. Thus this study has opened up a new pressure-temperature pathway for the synthesis of novel Si nanowires consisting of designed phase components with transformative properties.

Theoretical study on nanostructural modifications of the Si(111) surface

Modified Si(111) surface with designed nanostructural modifications including grown pits, nanobars and nanoislands as well as deposited hill-, diamond- and cage-like nanoclusters were studied using density-functional theory (DFT) calculations. The thermal stabilities, electronic structures and optical properties of these various nanostructural modifications of the Si(111) surface were calculated and discussed. The results indicate that the optical absorption of the modified Si(111) surface can be enhanced by these surface modifications especially when depositing diamond-like nanoclusters on the surface.

Pressure-driven phase transitions and reduction of dimensionality in 2D silicon nanosheets

In-situ high-pressure synchrotron X-ray powder diffraction studies up to 21 GPa of CVD-grown silicon 2D-nanosheets establish that the structural phase transitions depend on size and shape. For sizes between 9.3(7) nm and 15.2(8) nm we observe an irreversible phase transition sequence from I (cubic) → II (tetragonal) → V (hexagonal) during pressure increase and during decompression below 8 GPa the emergence of an X-ray amorphous phase. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and atomic force microscopy (AFM) images of this X-ray amorphous phase reveal the formation of significant numbers of 1D nanowires with aspect ratios > 10, which are twinned and grow along the <111> direction. We discovered a reduction of dimensionality under pressure from a 2D morphology to a 1D wire in a material with a diamond structure. MD simulations indicate the reduction of thermal conductivity in such nanowires.

Enhanced Multiple Exciton Generation in PbS|CdS Janus-like Heterostructured Nanocrystals

Generating multiple excitons by a single high-energy photon is a promising third-generation solar energy conversion strategy. We demonstrate that multiple exciton generation (MEG) in PbS|CdS Janus-like heteronanostructures is enhanced over that of single-component and core/shell nanocrystal architectures, with an onset close to two times the PbS band gap. We attribute the enhanced MEG to the asymmetric nature of the heteronanostructure that results in an increase in the effective Coulomb interaction that drives MEG and a reduction of the competing hot exciton cooling rate. Slowed cooling occurs through effective trapping of hot-holes by a manifold of valence band interfacial states having both PbS and CdS character, as evidenced by photoluminescence studies and ab initio calculations. Using transient photocurrent spectroscopy, we find that the MEG characteristics of the individual nanostructures are maintained in conductive arrays and demonstrate that these quasi-spherical PbS|CdS nanocrystals can be incorporated as the main absorber layer in functional solid-state solar cell architectures. Finally, based upon our analysis, we provide design rules for the next generation of engineered nanocrystals to further improve the MEG characteristics.

Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids

Semiconducting nanomaterials synthesized using wet chemical techniques play an important role in emerging optoelectronic and photonic technologies. Controlling the surface chemistry of the nano building blocks and their interfaces with ligands is one of the outstanding challenges for the rational design of these systems. We present an integrated theoretical and experimental approach to characterize, at the atomistic level, buried interfaces in solids of InAs nanoparticles capped with Sn₂S₆^4- ligands. These prototypical nanocomposites are known for their promising transport properties and unusual negative photoconductivity. We found that inorganic ligands dissociate on InAs to form a surface passivation layer. A nanocomposite with unique electronic and transport properties is formed, that exhibits type II heterojunctions favourable for exciton dissociation. We identified how the matrix density, sulfur content and specific defects may be designed to attain desirable electronic and transport properties, and we explain the origin of the measured negative photoconductivity of the nanocrystalline solids.

Metal-Insulator Transition in Nanoparticle Solids: Insights from Kinetic Monte Carlo Simulations

Progress has been rapid in increasing the efficiency of energy conversion in nanoparticles. However, extraction of the photo-generated charge carriers remains challenging. Encouragingly, the charge mobility has been improved recently by driving nanoparticle (NP) films across the metal-insulator transition (MIT). To simulate MIT in NP films, we developed a hierarchical Kinetic Monte Carlo transport model. Electrons transfer between neighboring NPs via activated hopping when the NP energies differ by more than an overlap energy, but transfer by a non-activated quantum delocalization, if the NP energies are closer than the overlap energy. As the overlap energy increases, emerging percolating clusters support a metallic transport across the entire film. We simulated the evolution of the temperature-dependent electron mobility. We analyzed our data in terms of two candidate models of the MIT: (a) as a Quantum Critical Transition, signaled by an effective gap going to zero; and (b) as a Quantum Percolation Transition, where a sample-spanning metallic percolation path is formed as the fraction of the hopping bonds in the transport paths is going to zero. We found that the Quantum Percolation Transition theory provides a better description of the MIT. We also observed an anomalously low gap region next to the MIT. We discuss the relevance of our results in the light of recent experimental measurements.

BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor

Large-volume, phase-pure synthesis of BC8 silicon (Ia3[over ¯], cI16) has enabled bulk measurements of optical, electronic, and thermal properties. Unlike previous reports that conclude BC8-Si is semimetallic, we demonstrate that this phase is a direct band gap semiconductor with a very small energy gap and moderate carrier concentration and mobility at room temperature, based on far- and midinfrared optical spectroscopy, temperature-dependent electrical conductivity, Seebeck and heat capacity measurements. Samples exhibit a plasma wavelength near 11  μm, indicating potential for infrared plasmonic applications. Thermal conductivity is reduced by 1-2 orders of magnitude depending on temperature as compared with the diamond cubic (DC-Si) phase. The electronic structure and dielectric properties can be reproduced by first-principles calculations with hybrid functionals after adjusting the level of exact Hartree-Fock (HF) exchange mixing. These results clarify existing limited and controversial experimental data sets and ab initio calculations.

Synthesis of Bulk BC8 Silicon Allotrope by Direct Transformation and Reduced-Pressure Chemical Pathways

Phase-pure samples of a metastable allotrope of silicon, Si-III or BC8, were synthesized by direct elemental transformation at 14 GPa and ∼900 K and also at significantly reduced pressure in the Na-Si system at 9.5 GPa by quenching from high temperatures ∼1000 K. Pure sintered polycrystalline ingots with dimensions ranging from 0.5 to 2 mm can be easily recovered at ambient conditions. The chemical route also allowed us to decrease the synthetic pressures to as low as 7 GPa, while pressures required for direct phase transition in elemental silicon are significantly higher. In situ control of the synthetic protocol, using synchrotron radiation, allowed us to observe the underlying mechanism of chemical interactions and phase transformations in the Na-Si system. Detailed characterization of Si-III using X-ray diffraction, Raman spectroscopy, (29)Si NMR spectroscopy, and transmission electron microscopy are discussed. These large-volume syntheses at significantly reduced pressures extend the range of possible future bulk characterization methods and applications.

Colloidal Nanoparticles for Intermediate Band Solar Cells

The Intermediate Band (IB) solar cell concept is a promising idea to transcend the Shockley-Queisser limit. Using the results of first-principles calculations, we propose that colloidal nanoparticles (CNPs) are a viable and efficient platform for the implementation of the IB solar cell concept. We focused on CdSe CNPs and we showed that intragap states present in the isolated CNPs with reconstructed surfaces combine to form an IB in arrays of CNPs, which is well separated from the valence and conduction band edges. We demonstrated that optical transitions to and from the IB are active. We also showed that the IB can be electron doped in a solution, e.g., by decamethylcobaltocene, thus activating an IB-induced absorption process. Our results, together with the recent report of a nearly 10% efficient CNP solar cell, indicate that colloidal nanoparticle intermediate band solar cells are a promising platform to overcome the Shockley-Queisser limit.

Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion

Ordinary materials can transform into novel phases at extraordinary high pressure and temperature. The recently developed method of ultrashort laser-induced confined microexplosions initiates a non-equilibrium disordered plasma state. Ultra-high quenching rates overcome kinetic barriers to the formation of new metastable phases, which are preserved in the surrounding pristine crystal for subsequent exploitation. Here we demonstrate that confined microexplosions in silicon produce several metastable end phases. Comparison with an ab initio random structure search reveals six energetically competitive potential phases, four tetragonal and two monoclinic structures. We show the presence of bt8 and st12, which have been predicted theoretically previously, but have not been observed in nature or in laboratory experiments. In addition, the presence of the as yet unidentified silicon phase, Si-VIII and two of our other predicted tetragonal phases are highly likely within laser-affected zones. These findings may pave the way for new materials with novel and exotic properties.

Second-quantized surface hopping

The trajectory surface hopping method for quantum dynamics is reformulated in the space of many-particle states to include entanglement and correlation of trajectories. Used to describe many-body correlation effects in electronic structure theories, second quantization is applied to semiclassical trajectories. The new method allows coupling between individual trajectories via energy flow and common phase evolution. It captures the properties of a wave packet, such as branching, Heisenberg uncertainty, and decoherence. Applied to a superexchange process, the method shows very accurate results, comparable to exact quantum data and improving greatly on the standard approach.

Dense Si(x)Ge(1-x) (0 < x < 1) materials landscape using extreme conditions and precession electron diffraction

High-pressure and -temperature experiments on Ge and Si mixtures to 17 GPa and 1500 K allow us to obtain extended Ge-Si solid solutions with cubic (Ia3) and tetragonal (P4(3)2(1)2) crystal symmetries at ambient pressure. The cubic modification can be obtained with up to 77 atom % Ge and the tetragonal modification for Ge concentrations above that. Together with Hume-Rothery criteria, melting point convergence is employed here as a favored attribute for solid solution formation. These compositionally tunable alloys are of growing interest for advanced transport and optoelectronic applications. Furthermore, the work illustrates the significance of employing precession electron diffraction for mapping new materials landscapes resulting from tailored high-pressure and -temperature syntheses.