Topological phase diagrams of bulk and monolayer TiS2-x Tex

Exploring a new topological insulator in β-BiAs oxide

The scarcity of suitable quantum spin Hall (QSH) insulators with a significant bulk gap poses a major challenge to the widespread application of the QSH effect. This study employs first-principles calculations to investigate the stability, electronic structure, and topological properties of a fully oxygenated bismuth arsenide system. Without the influence of spin-orbit coupling (SOC), the valence and conduction bands at the Γ-point exhibit a semimetallic nature. However, introducing SOC leads to a substantial 352 meV band gap, which allows operation at room temperature. The calculation of the topological invariant reveals , and the presence of topologically protected edge states in a Dirac cone at the Γ point confirms the existence of a non-trivial topological state. The epitaxial growth of β-BiAsO2 on a SiO2 substrate maintains the band topology of β-BiAsO2, spin lock with SOC effect. Additionally, the fully oxidized surfaces of β-BiAsO2 are inherently resistant to surface oxidation and degradation, suggesting a promising approach for developing room-temperature topological quantum devices. These findings not only introduce new vitality into the 2D group-VA materials family and enrich the available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.

Pressure induced topological and topological crystalline insulators

Research on topological and topological crystalline insulators (TCIs) is one of the most intense and exciting topics due to its fascinating fundamental science and potential technological applications. Pressure (strain) is one potential pathway to induce the non-trivial topological phases in some topologically trivial (normal) insulating or semiconducting materials. In the last ten years, there have been substantial theoretical and experimental efforts from condensed-matter scientists to characterize and understand pressure-induced topological quantum phase transitions (TQPTs). In particular, a promising enhancement of the thermoelectric performance through pressure-induced TQPT has been recently realized; thus evidencing the importance of this subject in society. Since the pressure effect can be mimicked by chemical doping or substitution in many cases, these results have opened a new route to develop more efficient materials for harvesting green energy at ambient conditions. Therefore, a detailed understanding of the mechanism of pressure-induced TQPTs in various classes of materials with spin-orbit interaction is crucial to improve their properties for technological implementations. Hence, this review focuses on the emerging area of pressure-induced TQPTs to provide a comprehensive understanding of this subject from both theoretical and experimental points of view. In particular, it covers the Raman signatures of detecting the topological transitions (under pressure), some of the important pressure-induced topological and TCIs of the various classes of spin-orbit coupling materials, and provide future research directions in this interesting field.

On the interface between biomaterials and two-dimensional materials for biomedical applications

Two-dimensional (2D) materials have garnered significant attention due to their ultrathin 2D structures with a high degree of anisotropy and functionality. Reliable manipulation of interfaces between 2D materials and biomaterials is a new frontier for biomedical nanoscience and combining biomaterials with 2D materials offers a promising way to fabricate innovative 2D biomaterials composites with distinct functionality for biomedical applications. Here, we focus exclusively on a summary of the current work in the interface investigation of 2D biomaterials. Specifically, we highlight extraordinary features that make 2D materials so desirable, as well as the molecular level interactions between 2D materials and biomaterials that have been studied thus far. Furthermore, the approaches for investigating the interface characteristics of 2D biomaterials are presented and described in depth. To capture the emerging trend in mass manufacturing of 2D materials, we review the research progress on biomaterial-assisted exfoliation. Finally, we present a critical assessment of newly developed 2D biomaterials in biomedical applications.

Transport and topological properties of ThOCh(Ch: S, Se and Te) in bulk and monolayer: a first principles study

The present study unveils the topological insulating nature of Th-based oxy-chalcogenides and their transport properties which are less explored. A systematic analysis of electronic, topological, mechanical, dynamical and thermoelectric properties of ThOCh (Ch: S, Se and Te) in bulk and monolayer is presented. The effect of spin-orbit coupling is found to be appreciable in ThOTe compared to ThOS and ThOSe, causing a strong topological nature in bulk ThOTe. The detailed analysis of electronic structure, Z₂ topological invariant and conducting surface states support the strong topological nature in bulk ThOTe. From thermoelectric studies, ThOS and ThOSe are found to be good thermoelectric candidates with heavy carrier doping (around 10²⁰ cm^-3). To explore further, we have applied hydrostatic strain on bulk ThOCh and found that all the compounds are dynamically stable and show topological metallic behavior. The appearance of highly linearized Dirac points in the same energy range at different high symmetry points in the BZ indicate the presence of nodal line in ThOS and ThOSe without spin-orbit coupling and with the inclusion of spin-orbit coupling, the nodal line is found to be disappear. This variation in bands with and without spin-orbit coupling might indicate the topological nature in monolayer ThOCh. The thermoelectric calculations for monolayer shows an enhancement in electrical conductivity scaled by relaxation time by an order of ten compared to bulk and the carrier independent thermoelectric properties in monolayer might fetch good thermoelectric device applications. Overall, the present study explores yet another series of potential candidates for topological and thermoelectric properties in both bulk and layer forms.

Polarization envelope helicity dependent photovoltage in GaAs/Al0.3Ga0.7As modulation-doped quantum well

In this study, we demonstrate the switching of the direction of the photocurrent in an n-type GaAs/Al_0.3Ga_0.7As modulation-doped quantum well using a polarization pulse-shaping apparatus containing a 4f setup. The right- and left-polarization-twisting pulses with a polarization rotation frequency in the THz-regime are incident on a modulation-doped quantum well. The results show that the sign of the photovoltage is dependent on the direction of rotation of the polarization-twisting pulses, which can be explained by the circular photogalvanic effect combined with the production of a classical edge photocurrent from the acceleration of free electrons in the vicinity of the sample edge by the incident optical electric field. The wide range over which the polarization-rotation frequency may be tuned makes this method a powerful tool to investigate the response of an extensive variety of materials in the THz-regime.

In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide

Semimetallic-layered transition-metal dichalcogenides, such as TiS₂, can serve as a platform material for exploring novel physics modulated by dimensionality, as well as for developing versatile applications in electronics and thermoelectrics. However, controlled synthesis of ultrathin TiS₂ in a dry-chemistry way has yet to be realized because of the high oxophilicity of active Ti precursors. Here, we report the ambient pressure chemical vapor deposition (CVD) method to grow large-size, highly crystalline two-dimensional (2D) TiS₂ nanosheets through in situ generating titanium chloride as the gaseous precursor. The addition of NH₄Cl promoter can react with Ti powders and switch the solid-phase sulfurization reaction into a CVD process, thus enabling the controllability over the size, shape, and thickness of the TiS₂ nanosheets via tuning the synthesis conditions. Interestingly, this semimetallic 2D material exhibits near-infrared surface plasmon resonance absorption and a memristor-like electrical behavior, both holding promise for further application developments. Our method hence opens a new avenue for the CVD growth of 2D metal dichalcogenides directly from metal powders and pave the way for exploring their intriguing properties and applications.

Topological Insulator in Two-Dimensional SiGe Induced by Biaxial Tensile Strain

Strain-engineered two-dimensional (2D) SiGe is predicted to be a topological insulator (TI) based on first-principle calculations. The dynamical and thermal stabilities were ascertained through phonon spectra and ab initio molecular dynamics simulations. 2D SiGe remains dynamically stable under tensile strains of 4 and 6%. A band inversion was observed at the Γ-point with a band gap of 25 meV for 6% strain due to spin-orbit coupling interactions. Nontrivial of the TI phase was determined by its topological invariant (υ = 1). For SiGe nanoribbon with edge states, the valence band and conduction band cross at the Γ-point to create a topologically protected Dirac cone inside the bulk gap. We found that hexagonal boron nitride (h-BN) with high dielectric constant and band gap can be a very stable support to experimentally fabricate 2D SiGe as the h-BN layer does not alter its nontrivial topological character. Unlike other heavy-metal-based 2D systems, because SiGe has a sufficiently large gap, it can be utilized for spintronics and quantum spin Hall-based applications under ambient condition.

Topological metal of NaBi with ultralow lattice thermal conductivity and electron-phonon superconductivity

By means of first-principles and ab initio tight-binding calculations, we found that the compound of NaBi is a three-dimensional non-trivial topological metal. Its topological feature can be confirmed by the presence of band inversion, the derived effective Z₂ invariant and the non-trivial surface states with the presence of Dirac cones. Interestingly, our calculations further demonstrated that NaBi exhibits the uniquely combined properties between the electron-phonon coupling superconductivity in nice agreement with recent experimental measurements and the obviously anisotropic but extremely low thermal conductivity. The spin-orbit coupling effects greatly affect those properties. NaBi may provide a rich platform to study the relationship among metal, topology, superconductivity and thermal conductivity.

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.