Coherent adiabatic spin control in the presence of charge noise using tailored pulses

Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunneling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio frequency resonant circuit coupled via the gate. Differential capacitance changes at the interdot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-Stückelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunneling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, T2 ≈ 100 ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.

Counter-diabatic driving for fast spin control in a two-electron double quantum dot

The techniques of shortcuts to adiabaticity have been proposed to accelerate the "slow" adiabatic processes in various quantum systems with the applications in quantum information processing. In this paper, we study the counter-diabatic driving for fast adiabatic spin manipulation in a two-electron double quantum dot by designing time-dependent electric fields in the presence of spin-orbit coupling. To simplify implementation and find an alternative shortcut, we further transform the Hamiltonian in term of Lie algebra, which allows one to use a single Cartesian component of electric fields. In addition, the relation between energy and time is quantified to show the lower bound for the operation time when the maximum amplitude of electric fields is given. Finally, the fidelity is discussed with respect to noise and systematic errors, which demonstrates that the decoherence effect induced by stochastic environment can be avoided in speeded-up adiabatic control.

Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface

Here we report the direct observation of single electron charging of a single atomic dangling bond (DB) on the H-Si(100)-2×1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single-electron sensitive charge detector. Three distinct charge states of the dangling bond--positive, neutral, and negative--are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single-electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other.

Characterization of qubit dephasing by Landau-Zener-Stückelberg-Majorana interferometry

Controlling coherent interaction at avoided crossings and the dynamics there is at the heart of quantum information processing. A particularly intriguing dynamics is observed in the Landau-Zener regime, where periodic passages through the avoided crossing result in an interference pattern carrying information about qubit properties. In this Letter, we demonstrate a straightforward method, based on steady-state experiments, to obtain all relevant information about a qubit, including complex environmental influences. We use a two-electron charge qubit defined in a lateral double quantum dot as test system and demonstrate a long coherence time of T2 ≃ 200 ns, which is limited by electron-phonon interaction.

Observation of time-domain Rabi oscillations in the Landau-Zener regime with a single electronic spin

It is theoretically known that the quantum interference of a long sequence of Landau-Zener transitions can result in Rabi oscillations. Because of its stringent requirements, however, this phenomenon has never been experimentally observed in the time domain. Using a nitrogen-vacancy (NV) center spin in isotopically purified diamond, we observed the Rabi oscillations resulting from more than 100 Landau-Zener processes. Our results demonstrate favorable quantum controllability of NV centers, which could find applications in quantum metrology and quantum information processing.

Exact classification of Landau-Majorana-Stückelberg-Zener resonances by floquet determinants

Recent experiments have shown that Landau-Majorana-Stückelberg-Zener (LMSZ) interferometry is a powerful tool for demonstrating and exploiting quantum coherence not only in atomic systems but also in a variety of solid state quantum systems such as spins in quantum dots, superconducting qubits, and nitrogen vacancy centers in diamond. In this Letter, we propose and develop a general (and, in principle, exact) theoretical formalism to identify and characterize the interference resonances that are the hallmark of LMSZ interferometry. Unlike earlier approaches, our scheme does not require any approximations, allowing us to uncover important and previously unknown features of the resonance structure. We also discuss the experimental observability of our results.