Distinguishing spin relaxation mechanisms in organic semiconductors

Spin Selectivity in Chiral Hybrid Cobalt Halide Films with Ultrasmooth Surface

Introducing chirality into low-dimensional hybrid organic-inorganic halides (HOIHs) creates brand-new opportunities for HOIHs in spintronics and spin-related optoelectronics owing to chirality-induced spin selectivity (CISS). However, preparing smooth films of low-dimensional HOIHs with small roughness is still a great challenge due to the hybrid and complex crystal structure, which severely inhibits their applications in spintronic devices. Exploring new lead-free chiral HOIHs with both efficient spin selectivity and excellent film quality is urgently desired. Here, cobalt-based chiral metal halide crystals (R/S-NEA)₂ CoCl₄ constructed by 0D [CoCl₄ ] tetrahedrons and 1-(1-naphtyl)ethylamine (NEA) are synthesized. The orderly configuration of NEA molecules stabilized by noncovalent CH···π interaction endows (NEA)₂ CoCl₄ with good film-forming ability. (NEA)₂ CoCl₄ films exhibit strong chiroptical activity (g_CD  ≈ 0.05) and significant spin-polarized transport (CISS efficiency up to 90%). Furthermore, ultrasmooth films (roughness ∼ 0.3 nm) with enhanced crystallinity can be achieved by incorporating tiny amount tris(8-oxoquinoline)aluminum that has analogous conjugated structure to NEA. The realization of highly efficient spin selectivity and sub-nanometer roughness in lead-free chiral halides can boost the practical process of low-dimensional HOIHs in spintronics and other fields.

Normal & reversed spin mobility in a diradical by electron-vibration coupling

π−conjugated radicals have great promise for use in organic spintronics, however, the mechanisms of spin relaxation and mobility related to radical structural flexibility remain unexplored. Here, we describe a dumbbell shape azobenzene diradical and correlate its solid-state flexibility with spin relaxation and mobility. We employ a combination of X-ray diffraction and Raman spectroscopy to determine the molecular changes with temperature. Heating leads to: i) a modulation of the spin distribution; and ii) a “normal” quinoidal → aromatic transformation at low temperatures driven by the intramolecular rotational vibrations of the azobenzene core and a “reversed” aromatic → quinoidal change at high temperatures activated by an azobenzene bicycle pedal motion amplified by anisotropic intermolecular interactions. Thermal excitation of these vibrational states modulates the diradical electronic and spin structures featuring vibronic coupling mechanisms that might be relevant for future design of high spin organic molecules with tunable magnetic properties for solid state spintronics.

In this manuscript, Negri, Zheng, Casado et al develop a stable and flexible diradical. Using a combination of experimental and theoretical techniques, they show how heating leads to change in the electronic and spin delocalizations ocurring between quinoidal and aromatic forms, and elucidate a unique spin-vibrational coupling.

Simulation and Theory of Classical Spin Hopping on a Lattice

The behavior of spin for incoherently hopping carriers is critical to understand in a variety of systems such as organic semiconductors, amorphous semiconductors, and muon-implanted materials. This work specifically examined the spin relaxation of hopping spin/charge carriers through a cubic lattice in the presence of varying degrees of energy disorder when the carrier spin is treated classically and random spin rotations are suffered during the hopping process (to mimic spin–orbit coupling effects) instead of during the wait time period (which would be more appropriate for hyperfine coupling). The problem was studied under a variety of different assumptions regarding the hopping rates and the random local fields. In some cases, analytic solutions for the spin relaxation rate were obtained. In all the models, we found that exponentially distributed energy disorder led to a drastic reduction in spin polarization losses that fell nonexponentially.

Interface hybridization and spin filter effect in metal-free phthalocyanine spin valves

Spin–orbit coupling has been regarded as the core interaction to determine the efficiency of spin conserved transport in semiconductor spintronics. Here, we show the spin filter effect should be responsible for the magnetoresistance of H₂Pc device.

Spin-Photon Coupling in Organic Chiral Crystals

Organic chiral materials have brought attention due to their potential application in the area of spin-optics and optoelectronics. Compared with traditional achiral materials, the chirality generated orbital angular momentum (CGO) is one of the key properties for chiral materials. Here, organic nanocrystals with chirality are fabricated to study the effect of the CGO on the magneto-optic coupling. The CGO affects spin states through spin-orbital coupling, which will suppress spin relaxation time to tens of picoseconds. Furthermore, spin states in chiral crystals will be further tuned by the external magnetic field to demonstrate the dependence of spin-photon coupling effects on the magnetic field.

Magnetic and Electric Control of Circularly Polarized Emission through Tuning Chirality-Generated Orbital Angular Momentum in Organic Helical Polymeric Nanofibers

Circularly polarized light emission promotes the development of smart photonic materials for advanced applications in chiral sensing and information storage. The orbital angular momentum is a unique property for organic chiral helical materials. In this work, a type of organic chiral polymeric nanowires is designed with strong chirality induced orbital angular momentum. Under the stimulus of an external magnetic field of 600 mT, circularly polarized emission from the chiral polymeric nanowire becomes more pronounced, where the g factor increases from 0.21 to 0.3. The observed phenomena mainly originate from the chirality-dependent orbital angular momentum. Moreover, the orbital angular momentum in helical chiral nanowire structures can be suppressed by inhibiting electron transport in a helical way to diminish circularly polarized light emission at room temperature.

Achieving large and nonvolatile tunable magnetoresistance in organic spin valves using electronic phase separated manganites

Tailoring molecular spinterface between novel magnetic materials and organic semiconductors offers promise to achieve high spin injection efficiency. Yet it has been challenging to achieve simultaneously a high and nonvolatile control of magnetoresistance effect in organic spintronic devices. To date, the largest magnetoresistance (~300% at T = 10 K) has been reached in tris-(8-hydroxyquinoline) aluminum (Alq₃)-based organic spin valves (OSVs) using La_0.67Sr_0.33MnO₃ as a magnetic electrode. Here we demonstrate that one type of perovskite manganites, i.e., a (La_2/3Pr_1/3)_5/8Ca_3/8MnO₃ thin film with pronounced electronic phase separation (EPS), can be used in Alq₃-based OSVs to achieve a large magnetoresistance (MR) up to 440% at T = 10 K and a typical electrical Hanle effect as the Hallmark of the spin injection. The contactless magnetic field-controlled EPS enables us to achieve a nonvolatile tunable MR response persisting up to 120 K. Our study suggests a new route to design high performance multifunctional OSV devices using electronic phase separated manganites.

Organic materials hold great potential of for spintronic applications. Here the authors show electronic phase dependent magnetoresistance (MR) effect in LPCMO/Alq₃/Co junctions with large MR up to 440% at 10 K as well as electrical Hanle effect as the Hallmark of the spin injection.

Active Morphology Control for Concomitant Long Distance Spin Transport and Photoresponse in a Single Organic Device

Long distance spin transport and photoresponse are demonstrated in a single F16 CuPc spin valve. By introducing a low-temperature strategy for controlling the morphology of the organic layer during the fabrication of a molecular spin valve, a large spin-diffusion length up to 180 nm is achieved at room temperature. Magnetoresistive and photoresponsive signals are simultaneously observed even in an air atmosphere.

Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures

We demonstrate that electron spin relaxation in GaAs in the proximity of a Fe/MgO layer is dominated by interaction with an exchange-driven hyperfine field at temperatures below 60 K. Temperature-dependent spin-resolved optical pump-probe spectroscopy reveals a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation that at low temperatures the free-carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. As the regime of large nuclear inhomogeneity is accessible in these heterostructures for magnetic fields <3  kG, inferences from this result resolve a long-standing and contentious dispute concerning the origin of spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding clarifies the importance of future experiments probing the time-dependent exchange interaction at a ferromagnet-semiconductor interface and its consequences for spin dissipation and transport during spin pumping.

Electron Spin Relaxation of Hole and Electron Polarons in π-Conjugated Porphyrin Arrays: Spintronic Implications

Electron spin resonance (ESR) spectroscopic line shape analysis and continuous-wave (CW) progressive microwave power saturation experiments are used to probe the relaxation behavior and the relaxation times of charged excitations (hole and electron polarons) in meso-to-meso ethyne-bridged (porphinato)zinc(II) oligomers (PZnn compounds), which can serve as models for the relevant states generated upon spin injection. The observed ESR line shapes for the PZnn hole polaron ([PZnn](+•)) and electron polaron ([PZnn](-•)) states evolve from Gaussian to more Lorentzian as the oligomer length increases from 1.9 to 7.5 nm, with solution-phase [PZnn](+•) and [PZnn](-•) spin-spin (T2) and spin-lattice (T1) relaxation times at 298 K ranging, respectively, from 40 to 230 ns and 0.2 to 2.3 μs. Notably, these very long relaxation times are preserved in thick films of these species. Because the magnitudes of spin-spin and spin-lattice relaxation times are vital metrics for spin dephasing in quantum computing or for spin-polarized transport in magnetoresistive structures, these results, coupled with the established wire-like transport behavior across metal-dithiol-PZnn-metal junctions, present meso-to-meso ethyne-bridged multiporphyrin systems as leading candidates for ambient-temperature organic spintronic applications.

Magnetoresistance effect in rubrene-based spin valves at room temperature

We fabricate spin-valve devices with an Fe3O4/AlO/rubrene/Co stacking structure. Their magnetoresistance (MR) effects at room temperature and low temperatures are systemically investigated based on the measurement of MR curves, current-voltage response, etc. A large MR ratio of approximately 6% is achieved at room temperature, which is one of the highest MR ratios reported to date in organic spin valves. With decreasing measurement temperatures, we observe that the MR ratios increase because of decrease in spin scattering, and the width of the MR curves becomes larger owing to increase in the coercivity of the electrodes at low temperature. A nonlinear current-voltage dependence is clearly observed in these organic spin valves. From the measurement of MR curve for the spin valves with different rubrene layer thickness, we observe that the MR ratios monotonously decrease with increasing rubrene-layer thickness. We discuss the spin-dependent transport mechanisms in these devices based on our experimental results and the present theoretical analysis. Moreover, we note that the devices exhibit smaller MR ratios after annealing compared to their counterparts without annealing. On the basis of atomic force microscopy analysis of the organic films and device resistances, we deduce that the increase of interface spin scattering induced by large surface roughness after annealing most probably leads to reduction in the MR ratios.

Giant fluctuations of local magnetoresistance of organic spin valves and the non-Hermitian 1D Anderson model

Motivated by recent experiments, where the tunnel magnetoresitance (TMR) of a spin valve was measured locally, we theoretically study the distribution of TMR along the surface of magnetized electrodes. We show that, even in the absence of interfacial effects (like hybridization due to donor and acceptor molecules), this distribution is very broad, and the portion of area with negative TMR is appreciable even if on average the TMR is positive. The origin of the local sign reversal is quantum interference of subsequent spin-rotation amplitudes in the course of incoherent transport of carriers between the source and the drain. We find the distribution of local TMR exactly by drawing upon formal similarity between evolution of spinors in time and of the reflection coefficient along a 1D chain in the Anderson model. The results obtained are confirmed by the numerical simulations.