Spin backflow and ac voltage generation by spin pumping and the inverse spin Hall effect

High spin-orbit torque efficiency induced by engineering spin absorption for fully electric-driven magnetization switching

Realizing spin-orbit torque (SOT)-driven magnetization switching offers promising opportunities for the advancement of next-generation spintronics. However, the relatively low charge-spin conversion efficiency accompanied by an ultrahigh critical switching current density (Jc) remains a significant obstacle to the further development of SOT-based storage elements. Herein, spin absorption engineering at the ferromagnet/nonmagnet interface is firstly proposed to achieve high SOT efficiency in Pt/Co/Ir trilayers. The Jc value was significantly decreased to 7.5 × 106 A cm-2, achieving a maximum reduction of 58% when a 4.0-nm Gd layer was inserted into the Co/Ir interface. A similar trend was observed in the trilayers with various rare metal insertions, suggesting the universality of this approach. Simultaneously, the highest effective spin Hall angle of 0.29 was obtained in the Pt/Co/Gd (4.0 nm)/Ir multilayers, which was approximately three times greater than that obtained in the Pt/Co/Ir trilayer. First-principles calculations together with polarized neutron reflectivity results revealed that spin mixed conductivity can be significantly enhanced due to a spontaneous interfacial CoGd alloy, which is critical for high SOT efficiency. In addition, the deterministic field-free switching polarity can be tuned by introducing Gd insertion. These findings provide a promising pathway for deeply understanding the spin-charge conversion mechanism, and further enable the design of low-consumption spintronic circuits.

Persistent magnetic coherence in magnets

When excited, the magnetization in a magnet precesses around the field in an anticlockwise manner on a timescale governed by viscous magnetization damping, after which any information carried by the initial actuation seems to be lost. This damping appears to be a fundamental bottleneck for the use of magnets in information processing. However, here we demonstrate the recall of the magnetization-precession phase after times that exceed the damping timescale by two orders of magnitude using dedicated two-colour microwave pump-probe experiments for a Y3Fe5O12 microstructured film. Time-resolved magnetization state tomography confirms the persistent magnetic coherence by revealing a double-exponential decay of magnetization correlation. We attribute persistent magnetic coherence to a feedback effect, that is, coherent coupling of the uniform precession with long-lived excitations at the minima of the spin-wave dispersion relation. Our finding liberates magnetic systems from the strong damping in nanostructures that has limited their use in coherent information storage and processing.

Significant Role of Interfacial Spin-Orbit Coupling in the Spin-to-Charge Conversion in Pt/NiFe Heterostructure

For the spin-to-charge conversion (SCC) in heavy metal/ferromagnet (HM/FM) heterostructure, the contribution of interfacial spin-orbit coupling (SOC) remains controversial. Here, we investigate the SCC process of the Pt/NiFe heterostructure by the spin pumping in YIG/Pt/NiFe/IrMn multilayers. Due to the exchange bias of NiFe/IrMn structure, the NiFe magnetization can be switched between magnetically unsaturated and saturated states by opposite resonance fields of YIG layer. The spin-pumping signal is found to decrease significantly when the NiFe magnetization is changed from the saturated state to the unsaturated state. Theoretical analysis indicates that the interfacial spin absorption is enhanced for the above-mentioned NiFe magnetic state change, which results in the increased and decreased spin flow in the Pt layer and across the Pt/NiFe interface, respectively. These results demonstrate that in our case the interfacial SOC effect at the Pt/NiFe interface is dominant over the bulk inverse spin Hall effect in the Pt layer. Our work reveals a significant role of interfacial SOC in the SCC in HM/FM heterostructure, which can promote the development of high-efficiency spintronic devices through interfacial engineering.

Coherent Picture on the Pure Spin Transport between Ag/Bi and Ferromagnets

In a joint effort of both experiments and first-principles calculations, we resolve a hotly debated controversy and provide a coherent picture on the pure spin transport between Ag/Bi and ferromagnets. We demonstrate a strong inverse Rashba-Edelstein effect (IREE) at the interface in between Ag/Bi with a ferromagnetic metal (FM) but not with a ferromagnetic insulator. This is in sharp contrast to the previously claimed IREE at Ag/Bi interface or inverse spin Hall effect dominated spin transport. A more than one order of magnitude modulation of IREE signal is realized for different Ag/Bi-FM interfaces, casting strong tunability and a new direction for searching efficient spintronics materials.

Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering

A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both z- and x-axes, leading to the observed field-free deterministic magnetization switching. Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field and auxiliary heavy metal layer, enabling flexible design for future spin-orbit torque-based memory and logic devices.

Simultaneous observation of anti-damping and the inverse spin Hall effect in the La0.67Sr0.33MnO3/Pt bilayer system

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0.67Sr0.33MnO3/Pt bilayers which are prepared by oxide molecular beam epitaxy. The damping coefficient (α) of a La0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104. However the LSMO/Pt bilayers exhibit a decrease in α with an increase in Pt thickness. This decrease in the value of α is probably due to high anti-damping like torque. Furthermore, we have investigated the angle dependent inverse spin Hall effect (ISHE) to quantify the spin pumping voltage from other spin rectification effects such as the anomalous Hall effect and anisotropic magnetoresistance. We have observed a high spin pumping voltage (∼20 μV). The results indicate that both anti-damping and spin pumping phenomena occur simultaneously.

Current-Induced Spin-Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin-orbit torque (SOT), which originates from the spin-orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.

Coherent Transfer of Spin Angular Momentum by Evanescent Spin Waves within Antiferromagnetic NiO

Insulating antiferromagnets have recently emerged as efficient and robust conductors of spin current. Element-specific and phase-resolved x-ray ferromagnetic resonance has been used to probe the injection and transmission of ac spin current through thin epitaxial NiO(001) layers. The spin current is found to be mediated by coherent evanescent spin waves of GHz frequency, rather than propagating magnons of THz frequency, paving the way towards coherent control of the phase and amplitude of spin currents within an antiferromagnetic insulator at room temperature.

Coherent ac spin current transmission across an antiferromagnetic CoO insulator

The recent discovery of spin current transmission through antiferromagnetic insulating materials opens up vast opportunities for fundamental physics and spintronics applications. The question currently surrounding this topic is: whether and how could THz antiferromagnetic magnons mediate a GHz spin current? This mismatch of frequencies becomes particularly critical for the case of coherent ac spin current, raising the fundamental question of whether a GHz ac spin current can ever keep its coherence inside an antiferromagnetic insulator and so drive the spin precession of another ferromagnet layer coherently? Utilizing element- and time-resolved x-ray pump-probe measurements on Py/Ag/CoO/Ag/Fe₇₅Co₂₅/MgO(001) heterostructures, here we demonstrate that a coherent GHz ac spin current pumped by the Py ferromagnetic resonance can transmit coherently across an antiferromagnetic CoO insulating layer to drive a coherent spin precession of the Fe₇₅Co₂₅ layer. Further measurement results favor thermal magnons rather than evanescent spin waves as the mediator of the coherent ac spin current in CoO.

The mechanism underpinning the frequency mismatch between THz magnons and the GHz spin currents observed in antiferromagnetic insulators remains unknown. Here, the authors demonstrate that, in a Py/Ag/CoO/Ag/Fe₇₅Co₂₅/MgO(001) heterostructure, a GHz spin current transmits coherently across the antiferromagnetic CoO insulating layer to drive a coherent spin precession of the ferromagnetic Fe₇₅Co₂₅ layer.

All-optical detection of interfacial spin transparency from spin pumping in β-Ta/CoFeB thin films

Generation and utilization of pure spin current have revolutionized energy-efficient spintronic devices. Spin pumping effect generates pure spin current, and for its increased efficiency, spin-mixing conductance and interfacial spin transparency are imperative. The plethora of reports available on generation of spin current with giant magnitude overlook the interfacial spin transparency. Here, we investigate spin pumping in β-Ta/CoFeB thin films by an all-optical time-resolved magneto-optical Kerr effect technique. From variation of Gilbert damping with Ta and CoFeB thicknesses, we extract the spin diffusion length of β-Ta and spin-mixing conductances. Consequently, interfacial spin transparency is derived as 0.50 ± 0.03 from the spin Hall magnetoresistance model for the β-Ta/CoFeB interface. Furthermore, invariance of Gilbert damping with Cu spacer layer thickness inserted between β-Ta and CoFeB layers confirms the absence of other interface effects including spin memory loss. This demonstrates a reliable and noninvasive way to determine interfacial spin transparency and signifies its role in generation of pure spin current by spin pumping effect.

Broadband Terahertz Generation via the Interface Inverse Rashba-Edelstein Effect

Novel mechanisms for electromagnetic wave emission in the terahertz frequency regime emerging at the nanometer scale have recently attracted intense attention for the purpose of searching next-generation broadband THz emitters. Here, we report broadband THz emission, utilizing the interface inverse Rashba-Edelstein effect. By engineering the symmetry of the Ag/Bi Rashba interface, we demonstrate a controllable THz radiation (∼0.1-5  THz) waveform emitted from metallic Fe/Ag/Bi heterostructures following photoexcitation. We further reveal that this type of THz radiation can be selectively superimposed on the emission discovered recently due to the inverse spin Hall effect, yielding a unique film thickness dependent emission pattern. Our results thus offer new opportunities for versatile broadband THz radiation using the interface quantum effects.

Self-consistent determination of spin Hall angle and spin diffusion length in Pt and Pd: The role of the interface spin loss

Spin Hall angle (θ_SH) and spin diffusion length (λ_sd) are the key parameters in describing the spin-charge conversion, which is an integral part of spintronics. Despite their importance and much effort devoted to quantifying them, significant inconsistencies in the reported values for the same given material exist. We report a self-consistent method to quantify both θ_SH and λ_sd of nonmagnetic materials by spin pumping with various ferromagnetic (FM) pumping sources. We characterize the spin-charge conversion for Pt and Pd with various FM combinations using (i) effective spin-mixing conductance, (ii) microwave photoresistance, and (iii) inverse spin Hall effect measurements and find that the pumped spin current suffers an interfacial spin loss (ISL), whose magnitude varies for different interfaces. By properly treating the ISL effect, we obtained consistent values of θ_SH and λ_sd for both Pt and Pd regardless of the ferromagnet used.

Determination of spin Hall effect and spin diffusion length of Pt from self-consistent fitting of damping enhancement and inverse spin-orbit torque measurements

Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT. However, several experiments have revealed an apparent discrepancy between damping enhancement and damping-like SOT regarding their dependence on NM thickness. Here, using linewidth and phase-resolved amplitude analysis of vector network analyzer ferromagnetic resonance (VNA-FMR) measurements, we simultaneously extract damping enhancement and both field-like and damping-like inverse SOT in Ni80Fe20/Pt bilayers as a function of Pt thickness. By enforcing an interpretation of the data which satisfies Onsager reciprocity, we find that both the damping enhancement and damping-like inverse SOT can be described by a single spin diffusion length≈ 4 nm , and that we can separate the spin pumping and spin memory loss contributions to the total damping. This analysis indicates that less than 40% of the angular momentum pumped by FMR through the Ni80Fe20/Pt interface is transported as spin current into the Pt. On account of the spin memory loss and corresponding reduction in total spin current available for spin-charge transduction in the Pt, we determine the Pt spin Hall conductivityσ SH = 2.36 ± 0.04 × 10 6 Ω - 1 m - 1 and bulk spin Hall angleθ SH = 0.387 ± 0.008 to be larger than commonly-cited values. These results suggest that Pt can be an extremely useful source of SOT if the FM/NM interface can be engineered to minimize spin loss. Lastly, we find that self-consistent fitting of the damping and SOT data is best achieved by a model with Elliott-Yafet spin relaxation and extrinsic inverse spin Hall effect, such that both the spin diffusion length and spin Hall conductivity are proportional to the Pt charge conductivity.

Capping Layer (CL) Induced Antidamping in CL/Py/β-W System (CL: Al, β-Ta, Cu, β-W)

For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (α_eff) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/β-W(t_W)/Si (Py = Ni₈₁Fe₁₉ and t_W = thickness of β-W), which is in contrast to the increase of α_eff (i.e., damping) usually associated with spin pumping as seen in Py(15 nm)/β-W(t_W)/Si system. Because of spin pumping, the interfacial spin mixing conductance (g^↑↓) at Py/β-W interface and spin diffusion length (λ_SD) of β-W are found to be 1.63(±0.02) × 10¹⁸ m^-2 (1.44(±0.02) × 10¹⁸ m^-2) and 1.42(±0.19) nm (1.00(±0.10) nm) for Py(15 nm)/β-W(t_W)/Si (β-W(t_W)/Py(15 nm)/Si) bilayer systems. Other different nonmagnetic capping layers (CL), namely, β-W(2 nm), Cu(2 nm), and β-Ta(2,3,4 nm) were also grown over the same Py(15 nm)/β-W(t_W). However, antidamping is seen only in β-Ta(2,3 nm)/Py(15 nm)/β-W(t_W)/Si. This decrease in α_eff is attributed to the interfacial Rashba like SOT generated by nonequilibrium spin accumulation subsequent to the spin pumping. Contrary to this, when interlayer positions of Py(15 nm) and β-W(t_W) is interchanged irrespective of the fixed top nonmagnetic layer, an increase of α_eff is observed, which is ascribed to spin pumping from Py to β-W layer.

Analytical theory and possible detection of the ac quantum spin Hall effect

We develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

Coherent THz Transient Spin Currents by Spin Pumping

The generation of short spin current pulses is the basis for fast spintronic devices. In thin bilayer systems consisting of a nonmagnetic metal and a ferromagnet, a pure spin current is induced by a precessing magnetization into the nonmagnetic layer by spin pumping. This effect has been experimentally demonstrated at ferromagnetic resonance at GHz frequencies. Here, it is theoretically shown that transient magnetization dynamics efficiently generates short spin current pulses that exhibit two transient contributions. An effective coherent spin current generation is found far above the ferromagnetic resonance up to THz frequencies although dynamic magnetization amplitudes are very small in this regime. The results provide a concept for coherent THz spin current generation.

Cavity Mediated Manipulation of Distant Spin Currents Using a Cavity-Magnon-Polariton

Using electrical detection of a strongly coupled spin-photon system comprised of a microwave cavity mode and two magnetic samples, we demonstrate the long distance manipulation of spin currents. This distant control is not limited by the spin diffusion length, instead depending on the interplay between the local and global properties of the coupled system, enabling systematic spin current control over large distance scales (several centimeters in this work). This flexibility opens the door to improved spin current generation and manipulation for cavity spintronic devices.

Two magnon scattering and anti-damping behavior in a two-dimensional epitaxial TiN/Py(tPy)/β-Ta(tTa) system

Anti-damping in two-magnon scattering free two-dimensional epitaxial Si(400)/TiN(200) (8 nm)/Py(200) (12 nm)/Ta(200) (6 nm) system.

Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface

The spin-orbit coupling relating the electron spin and momentum allows for spin generation, detection and manipulation. It thus fulfils the three basic functions of the spin field-effect transistor. However, the spin Hall effect in bulk germanium is too weak to produce spin currents, whereas large Rashba effect at Ge(111) surfaces covered with heavy metals could generate spin-polarized currents. The Rashba spin splitting can actually be as large as hundreds of meV. Here we show a giant spin-to-charge conversion in metallic states at the Fe/Ge(111) interface due to the Rashba coupling. We generate very large charge currents by direct spin pumping into the interface states from 20 K to room temperature. The presence of these metallic states at the Fe/Ge(111) interface is demonstrated by first-principles electronic structure calculations. By this, we demonstrate how to take advantage of the spin-orbit coupling for the development of the spin field-effect transistor.

Spin Hall magnetoresistance in Co2FeSi/Pt thin films: dependence on Pt thickness and temperature

We have investigated the temperature and the Pt layer thickness dependence of the magnetoresistances (MRs) in Co₂FeSi/Pt thin films. Based on the field dependent measurements, it can be seen that the spin-current-induced spin Hall magnetoresistance (SMR) plays the dominant role in the MRs in the Co₂FeSi/Pt bilayers in the whole temperature range. Meanwhile, a quite small part of anisotropic magnetoresistance (AMR) existed in the MRs. It proved to be originated from magnetic proximity effect (MPE) by measuring the Pt thickness and temperature dependence of the AMR. Moreover, the Co₂FeSi layer thickness has much weaker effect on the SMR and AMR compared to the Pt layer thickness. These results indicate that the Co₂FeSi/Pt interface is beneficial to be used in the spin-current-induced physical phenomena.

Tuning Spin Hall Angles by Alloying

Within a combined experimental and theoretical study it is shown that the spin Hall angle of a substitutional alloy system can be continuously varied via its composition. For the alloy system Au_{x}Pt_{1-x} a substantial increase of the maximum spin Hall angle compared to the pure alloy partners could be achieved this way. The experimental findings for the longitudinal charge conductivity σ, the transverse spin Hall conductivity σ_{SH}, and the spin Hall angle α_{SH} could be confirmed by calculations based on Kubo's linear response formalism. Calculations of these response quantities for different temperatures show that the divergent behavior of σ and σ_{SH} is rapidly suppressed with increasing temperature. As a consequence, σ_{SH} is dominated at higher temperatures by its intrinsic contribution that has only a rather weak temperature dependence.

Spin-torque generator engineered by natural oxidation of Cu

The spin Hall effect is a spin–orbit coupling phenomenon, which enables electric generation and detection of spin currents. This relativistic effect provides a way for realizing efficient spintronic devices based on electric manipulation of magnetization through spin torque. However, it has been believed that heavy metals are indispensable for the spin–torque generation. Here we show that the spin Hall effect in Cu, a light metal with weak spin–orbit coupling, is significantly enhanced through natural oxidation. We demonstrate that the spin–torque generation efficiency of a Cu/Ni₈₁Fe₁₉ bilayer is enhanced by over two orders of magnitude by tuning the surface oxidation, reaching the efficiency of Pt/ferromagnetic metal bilayers. This finding illustrates a crucial role of oxidation in the spin Hall effect, opening a route for engineering the spin–torque generator by oxygen control and manipulating magnetization without using heavy metals.

In thin film spintronic devices, heavy metals with strong spin-orbit coupling are required to achieve a sizeable spin Hall effect. Here, the authors demonstrate an enhancement of the spin Hall effect in Cu, a material with weak spin-orbit coupling, via natural oxidation.

Dynamic Feedback in Ferromagnet-Spin Hall Metal Heterostructures

In ferromagnet-normal-metal heterostructures, spin pumping and spin-transfer torques are two reciprocal processes that occur concomitantly. Their interplay introduces a dynamic feedback effect interconnecting energy dissipation channels of both magnetization and current. By solving the spin diffusion process in the presence of the spin Hall effect in the normal metal, we show that the dynamic feedback gives rise to (i) a nonlinear magnetic damping that is crucial to sustain uniform steady-state oscillations of a spin Hall oscillator at large angles and (ii) a frequency-dependent spin Hall magnetoimpedance that reduces to the spin Hall magnetoresistance in the dc limit.

Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures

We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films-Bi_{2}Se_{3} and (Bi,Sb)_{2}Te_{3}-deposited by molecular beam epitaxy on Y_{3}Fe_{5}O_{12} thin films. By systematically varying the Bi_{2}Se_{3} film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λ_{IREE}), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y_{3}Fe_{5}O_{12}/(Bi,Sb)_{2}Te_{3} heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λ_{IREE}.

Direct Detection of Pure ac Spin Current by X-Ray Pump-Probe Measurements

Despite recent progress in spin-current research, the detection of spin current has mostly remained indirect. By synchronizing a microwave waveform with synchrotron x-ray pulses, we use the ferromagnetic resonance of the Py (Ni_{81}Fe_{19}) layer in a Py/Cu/Cu_{75}Mn_{25}/Cu/Co multilayer to pump a pure ac spin current into the Cu_{75}Mn_{25} and Co layers, and then directly probe the spin current within the Cu_{75}Mn_{25} layer and the spin dynamics of the Co layer by x-ray magnetic circular dichroism. This element-resolved pump-probe measurement unambiguously identifies the ac spin current in the Cu_{75}Mn_{25} layer.

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling

Exploration of spin currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spintronics applications. Owing to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from π-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the curvature of the molecule's surface. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin currents at room temperature, and paves the way for spin orbitronics in plastic materials.

Terahertz Antiferromagnetic Spin Hall Nano-Oscillator

We consider the current-induced dynamics of insulating antiferromagnets in a spin Hall geometry. Sufficiently large in-plane currents perpendicular to the Néel order trigger spontaneous oscillations at frequencies between the acoustic and the optical eigenmodes. The direction of the driving current determines the chirality of the excitation. When the current exceeds a threshold, the combined effect of spin pumping and current-induced torques introduces a dynamic feedback that sustains steady-state oscillations with amplitudes controllable via the applied current. The ac voltage output is calculated numerically as a function of the dc current input for different feedback strengths. Our findings open a route towards terahertz antiferromagnetic spin-torque oscillators.

Antiferromagnetic Spin Wave Field-Effect Transistor

In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale.

Spin Torque Study of the Spin Hall Conductivity and Spin Diffusion Length in Platinum Thin Films with Varying Resistivity

We report measurements of the spin torque efficiencies in perpendicularly magnetized Pt/Co bilayers where the Pt resistivity ρ_{Pt} is strongly dependent on thickness t_{Pt}. The dampinglike spin Hall torque efficiency per unit current density ξ_{DL}^{j} varies significantly with t_{Pt}, exhibiting a peak value ξ_{DL}^{j}=0.12 at t_{Pt}=2.8-3.9  nm. In contrast, ξ_{DL}^{j}/ρ_{Pt} increases monotonically with t_{Pt} and saturates for t_{Pt}>5  nm, consistent with an intrinsic spin Hall effect mechanism, in which ξ_{DL}^{j} is enhanced by an increase in ρ_{Pt}. Assuming the Elliott-Yafet spin scattering mechanism dominates, we estimate that the spin diffusion length λ_{s}=(0.77±0.08)×10^{-15}  Ω·m^{2}/ρ_{Pt}.

High performance electronic device for the measurement of the inverse spin Hall effect

We have developed a high performance analog electronic device that can be used for the measurement of the inverse spin Hall effect (ISHE) as a function of the applied magnetic field. The electronic circuit is based on the synchronous detection technique with a careful selection of the active components in order to optimize the response in this application. The electronic accessory was adapted for the simultaneous measurement of the ISHE signal and the microwave absorption in an electron spin resonance spectrometer and tested with a bilayer sample of 5 nm of permalloy (Ni80Fe20) and 5 nm of tantalum. The response of the electronic device was characterized as a function of the microwave power, the amplitude and frequency of the modulation signal, and the relative phase between signal and reference. This last characterization reveals a simple method to put in phase the signal with the reference. The maximum signal to noise ratio was achieved for a modulation frequency between 6 and 12 kHz, for the largest possible values of field modulation amplitude and microwave power.

Anomalous anti-damping in sputtered β-Ta/Py bilayer system

Anomalous decrease in effective damping parameter α_eff in sputtered Ni₈₁Fe₁₉ (Py) thin films in contact with a very thin β-Ta layer without necessitating the flow of DC-current is observed. This reduction in α_eff, which is also referred to as anti-damping effect, is found to be critically dependent on the thickness of β-Ta layer; α_eff being highest, i.e., 0.0093 ± 0.0003 for bare Ni₈₁Fe₁₉(18 nm)/SiO₂/Si compared to the smallest value of 0.0077 ± 0.0001 for β-Ta(6 nm)/Py(18 nm)/SiO₂/Si. This anomalous anti-damping effect is understood in terms of interfacial Rashba effect associated with the formation of a thin protective Ta₂O₅ barrier layer and also the spin pumping induced non-equilibrium diffusive spin-accumulation effect in β-Ta layer near the Ta/Py interface which induces additional spin orbit torque (SOT) on the moments in Py leading to reduction in . The fitting of (t_Ta) revealed an anomalous negative interfacial spin mixing conductance, and spin diffusion length,. The increase in α_eff observed above t_Ta = 6 nm is attributed to the weakening of SOT at higher t_Ta. The study highlights the potential of employing β-Ta based nanostructures in developing low power spintronic devices having tunable as well as low value of α.

Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures

We present the measurement of ferromagnetic resonance (FMR-)driven spin pumping and three-terminal electrical spin injection within the same silicon-based device. Both effects manifest in a dc spin accumulation voltage V_{s} that is suppressed as an applied field is rotated to the out-of-plane direction, i.e., the oblique Hanle geometry. Comparison of V_{s} between these two spin injection mechanisms reveals an anomalously strong suppression of FMR-driven spin pumping with increasing out-of-plane field H_{app}^{z}. We propose that the presence of the large ac component to the spin current generated by the spin pumping approach, expected to exceed the dc value by 2 orders of magnitude, is the origin of this discrepancy through its influence on the spin dynamics at the oxide-silicon interface. This convolution, wherein the dynamics of both the injector and the interface play a significant role in the spin accumulation, represents a new regime for spin injection that is not well described by existing models of either FMR-driven spin pumping or electrical spin injection.

Spin-current emission governed by nonlinear spin dynamics

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Nonlinear spin-current enhancement enabled by spin-damping tuning

When a magnon, the quanta of a spin excitation, is created in a magnet, this quasiparticle can split into two magnons, which triggers an angular momentum flow from the lattice to the spin subsystem. Although this process is known to enhance spin-current emission at metal/magnetic insulator interfaces, the role of interacting magnons in spintronic devices is still not well-understood. Here, we show that the enhanced spin-current emission is enabled by spin-damping tuning triggered by the redistribution of magnons. This is evidenced by time-resolved measurements of magnon lifetimes using the inverse spin Hall effect. Furthermore, we demonstrate nonlinear enhancement of the spin conversion triggered by scattering processes that conserve the number of magnons, illustrating the crucial role of spin-damping tuning in the nonlinear spin-current emission. These findings provide a crucial piece of information for the development of nonlinear spin-based devices, promising important advances in insulator spintronics.

Damping of confined modes in a ferromagnetic thin insulating film: angular momentum transfer across a nanoscale field-defined interface

We observe a dependence of the damping of a confined mode of precessing ferromagnetic magnetization on the size of the mode. The micron-scale mode is created within an extended, unpatterned yttrium iron garnet film by means of the intense local dipolar field of a micromagnetic tip. We find that the damping of the confined mode scales like the surface-to-volume ratio of the mode, indicating an interfacial damping effect (similar to spin pumping) due to the transfer of angular momentum from the confined mode to the spin sink of ferromagnetic material in the surrounding film. Though unexpected for insulating systems, the measured intralayer spin-mixing conductance g_↑↓=5.3×10(19)  m(-2) demonstrates efficient intralayer angular momentum transfer.

Phase-sensitive detection of spin pumping via the ac inverse spin Hall effect

We use a phase-sensitive, quantitative technique to separate inductive and ac inverse spin Hall effect (ISHE) voltages observed in Ni(81)Fe(19)/normal metal multilayers under the condition of ferromagnetic resonance. For Ni(81)Fe(19)/Pt thin film bilayers and at microwave frequencies from 7 to 20 GHz, we observe an ac ISHE magnitude that is much larger than that expected from the dc spin Hall angle Θ(SH)(Pt) = 0.1. Furthermore, at these frequencies, we find an unexpected, ≈ 110° phase of the ac ISHE signal relative to the in-plane component of the resonant magnetization precession. We attribute our findings to a dominant intrinsic ac ISHE in Pt.

Spin Hall voltages from a.c. and d.c. spin currents

In spin electronics, the spin degree of freedom is used to transmit and store information. To this end the ability to create pure spin currents--that is, without net charge transfer--is essential. When the magnetization vector in a ferromagnet-normal metal junction is excited, the spin pumping effect leads to the injection of pure spin currents into the normal metal. The polarization of this spin current is time-dependent and contains a very small d.c. component. Here we show that the large a.c. component of the spin currents can be detected efficiently using the inverse spin Hall effect. The observed a.c.-inverse spin Hall voltages are one order of magnitude larger than the conventional d.c.-inverse spin Hall voltages measured on the same device. Our results demonstrate that ferromagnet-normal metal junctions are efficient sources of pure spin currents in the gigahertz frequency range.

Spin pumping and inverse spin Hall effect in platinum: the essential role of spin-memory loss at metallic interfaces

Through combined ferromagnetic resonance, spin pumping, and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of ℓsfPt=3.4±0.4  nm and θSHEPt=0.056±0.010 for the respective spin diffusion length and spin Hall angle for Pt. Our data and model emphasize the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.

Note: electrical detection and quantification of Spin Rectification Effect enabled by shorted microstrip transmission line technique

We describe a shorted microstrip method for the sensitive quantification of Spin Rectification Effect (SRE). SRE for a Permalloy (Ni80Fe20) thin film strip sputtered onto SiO2 substrate is demonstrated. Our method obviates the need for simultaneous lithographic patterning of the sample and transmission line, therefore greatly simplifying the SRE measurement process. Such a shorted microstrip method can allow different contributions to SRE (anisotropic magnetoresistance, Hall effect, and anomalous Hall effect) to be simultaneously determined. Furthermore, SRE signals from unpatterned 50 nm thick Permalloy films of area dimensions 5 mm × 10 mm can even be detected.

Detection of microwave spin pumping using the inverse spin Hall effect

We report on the electrical detection of the dynamical part of the spin-pumping current emitted during ferromagnetic resonance using inverse spin Hall effect methods. The experiment is performed on a YIG|Pt bilayer. The choice of yttrium iron garnet (YIG), a magnetic insulator, ensures that no charge current flows between the two layers and only the pure spin current produced by the magnetization dynamics is transferred into the adjacent strong spin-orbit Pt layer via spin pumping. To avoid measuring the parasitic eddy currents induced at the frequency of the microwave source, a resonance at half the frequency is induced using parametric excitation in the parallel geometry. Triggering this nonlinear effect allows us to directly detect on a spectrum analyzer the microwave component of the inverse spin Hall effect voltage. Signals as large as 30 μV are measured for precession angles of a couple of degrees. This direct detection provides a novel efficient means to study magnetization dynamics on a very wide frequency range with great sensitivity.

Universal method for separating spin pumping from spin rectification voltage of ferromagnetic resonance

We develop a method for universally resolving the important issue of separating spin pumping from spin rectification signals in bilayer spintronics devices. This method is based on the characteristic distinction of spin pumping and spin rectification, as revealed in their different angular and field symmetries. It applies generally for analyzing charge voltages in bilayers induced by the ferromagnetic resonance (FMR), independent of FMR line shape. Hence, it solves the outstanding problem that device-specific microwave properties restrict the universal quantification of the spin Hall angle in bilayer devices via FMR experiments. Furthermore, it paves the way for directly measuring the nonlinear evolution of spin current generated by spin pumping. The spin Hall angle in a Py/Pt bilayer is thereby directly measured as 0.021±0.015 up to a large precession cone angle of about 20°.

Experimental test of the spin mixing interface conductivity concept

We perform a quantitative, comparative study of the spin pumping, spin Seebeck, and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20 yttrium iron garnet/Pt samples. Our experimental results fully support present, exclusively spin current-based, theoretical models using a single set of plausible parameters for spin mixing conductance, spin Hall angle, and spin diffusion length. Our findings establish the purely spintronic nature of the aforementioned effects and provide a quantitative description, in particular, of the spin Seebeck effect.

Solution-processed organic spin-charge converter

Conjugated polymers and small organic molecules are enabling new, flexible, large-area, low-cost optoelectronic devices, such as organic light-emitting diodes, transistors and solar cells. Owing to their exceptionally long spin lifetimes, these carbon-based materials could also have an important impact on spintronics, where carrier spins play a key role in transmitting, processing and storing information. However, to exploit this potential, a method for direct conversion of spin information into an electric signal is indispensable. Here we show that a pure spin current can be produced in a solution-processed conducting polymer by pumping spins through a ferromagnetic resonance in an adjacent magnetic insulator, and that this generates an electric voltage across the polymer film. We demonstrate that the experimental characteristics of the generated voltage are consistent with it being generated through an inverse spin Hall effect in the conducting polymer. In contrast with inorganic materials, the conducting polymer exhibits coexistence of high spin-current to charge-current conversion efficiency and long spin lifetimes. Our discovery opens a route for a new generation of molecular-structure-engineered spintronic devices, which could lead to important advances in plastic spintronics.