Static Magnetic Proximity Effect in Pt/NiFe2O4 and Pt/Fe Bilayers Investigated by X-Ray Resonant Magnetic Reflectivity

Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe3GeTe2

The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices, but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion doping are currently underway to enhance the functional temperature, in which the involvement of additional electrodes or extra magnetic ions limits their application in practical devices. Here we demonstrate that the magnetic proximity, a robust effect but with elusive mechanisms, can induce room-temperature ferromagnetism at the interface between sputtered Pt and semiconducting Fe3GeTe2, both of which do not show ferromagnetism at 300 K. The independent electrical and magnetization measurements, structure analysis, and control samples with Ta highlighting the role of Pt confirm that the ferromagnetism with the Tc of above 400 K arises from the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificial effects. Moreover, contrary to conventional ferromagnet/Pt structures, the spin current generated by the Pt layer is enhanced more than two times at the Fe3GeTe2/Pt interfaces, indicating the potential applications of the unique proximity effect in building highly efficient spintronic devices. These results may pave a new avenue to create room-temperature functional spin devices based on low-Tc materials and provide clear evidence of magnetic proximity effects by using nonferromagnetic materials.

Intrinsic Magnetic Proximity Effect at the Atomically Sharp Interface of CoxFe3-xO4/Pt Grown by Molecular Beam Epitaxy

Co_xFe_3-xO₄(CFO)/Pt bilayers prepared by molecular beam epitaxy were investigated for the anomalous Hall effect and X-ray magnetic circular dichroism (XMCD). We found that the anomalous Hall effect originates from a magnetic proximity effect at the CFO/Pt interface. The XMCD signal in the Pt L-edge was obtained only for the sample deposited at 600 °C, indicating that the magnetic proximity effect is sensitive to the interface structure. Transmission electron microscopy images of the CFO/Pt interface and XMCD measurements of Co and Fe L-edges do not provide direct evidence for interfacial atomic diffusion or alloying. In summary, these results suggest that the magnetic proximity effect is robust for transport properties, such as the anomalous Hall effect, while the induced magnetic moment depends on slight differences in the interfacial structure, such as the presence or absence of interfacial oxygen ions.

Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures

Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.

Understanding Signatures of Emergent Magnetism in Topological Insulator/Ferrite Bilayers

Magnetic insulator-topological insulator heterostructures have been studied in search of chiral edge states via proximity induced magnetism in the topological insulator, but these states have been elusive. We identified MgAl_{0.5}Fe_{1.5}O_{4}/Bi_{2}Se_{3} bilayers for a possible magnetic proximity effect. Electrical transport and polarized neutron reflectometry suggest a proximity effect, but structural data indicate a disordered interface as the origin of the magnetic response. Our results provide a strategy via correlation of microstructure with magnetic data to confirm a magnetic proximity effect.

Resonant Soft X-ray Reflectivity in the Study of Magnetic Properties of Low-Dimensional Systems

In this review, the technique of resonant soft X-ray reflectivity in the study of magnetic low-dimensional systems is discussed. This technique is particularly appealing in the study of magnetization at buried interfaces and to discriminate single elemental contributions to magnetism, even when this is ascribed to few atoms. The major fields of application are described, including magnetic proximity effects, thin films of transition metals and related oxides, and exchange-bias systems. The fundamental theoretical background leading to dichroism effects in reflectivity is also briefly outlined.

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.

Nonlocal Detection of Out-of-Plane Magnetization in a Magnetic Insulator by Thermal Spin Drag

We demonstrate a conceptually new mechanism to generate an in-plane spin current with out-of-plane polarization in a nonmagnetic metal, detected by nonlocal thermoelectric voltage measurement. We generate out-of-plane (∇T_{OP}) and in-plane (∇T_{IP}) temperature gradients, simultaneously, acting on a magnetic insulator-Pt bilayer. When the magnetization has a component oriented perpendicular to the plane, ∇T_{OP} drives a spin current into Pt with out-of-plane polarization due to the spin Seebeck effect. ∇T_{IP} then drags the resulting spin-polarized electrons in Pt parallel to the plane against the gradient direction. This finally produces an inverse spin Hall effect voltage in Pt, transverse to ∇T_{IP} and proportional to the out-of-plane component of the magnetization. This simple method enables the detection of the perpendicular magnetization component in a magnetic insulator in a nonlocal geometry.

Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction

Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a flow of charge along a nonmagnetic metal with large spin-orbit coupling. This produces a spin accumulation at the surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal for a full understanding of spin current conductance. Here, we report X-ray absorption and magnetic circular dichroism (XMCD) at Pt M and (Co, Fe) L absorption edges and atomically resolved energy electron loss spectroscopy (EELS) data of Pt/CoFe₂O₄ bilayers, where CoFe₂O₄ layers have been capped by Pt grown at different temperatures. It was found that the ADMR differs dramatically, dominated either by spin Hall magnetoresistance (SMR) associated with the spin Hall effect or by anisotropic magnetoresistance. The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at a higher temperature, it becomes magnetic due to interfacial Pt-(Co, Fe) alloying. These results enable differentiation of spin accumulation from interfacial chemical reconstructions and tailoring of the angular-dependent magnetoresistance.

Tuning bandgap and surface wettability of NiFe2O4 driven by phase transition

Stress variation induced bandgap tuning and surface wettability switching of spinel nickel ferrite (NiFe2O4, NFO) films were demonstrated and directly driven by phase transition via a post-annealing process. Firstly, the as-deposited NFO films showed hydrophilic surface with water contact angle (CA) value of 80 ± 1°. After post-annealing with designed temperatures ranged from 400 to 700 °C in air ambience for 1 hour, we observed that the crystal structure was clearly improved from amorphous-like/ nanocrystalline to polycrystalline with increasing post-annealing temperature and this phenomenon is attributed to the improved crystallinity combined with relaxation of internal stress. Moreover, super-hydrophilic surface (CA = 14 ± 1°) was occurred due to the remarkable grain structure transition. The surface wettability could be adjusted from hydrophilicity to super-hydrophilicity by controlling grain morphology of NFO films. Simultaneously, the saturation magnetization (Ms) values of NFO films at room temperature increased up to 273 emu/cm3 accompanied with transitions of the phase and grain structure. We also observed an exceptionally tunable bandgap of NFO in the range between 1.78 and 2.72 eV under phase transition driving. Meanwhile, our work demonstrates that direct grain morphology combined with the stress tuning can strongly modulate the optical, surface and magnetic characteristics in multifunctional NFO films.

Quantitative Disentanglement of the Spin Seebeck, Proximity-Induced, and Ferromagnetic-Induced Anomalous Nernst Effect in Normal-Metal-Ferromagnet Bilayers

We identify and investigate thermal spin transport phenomena in sputter-deposited Pt/NiFe_{2}O_{x} (4≥x≥0) bilayers. We separate the voltage generated by the spin Seebeck effect from the anomalous Nernst effect (ANE) contributions and even disentangle the ANE in the ferromagnet (FM) from the ANE produced by the Pt that is spin polarized due to its proximity to the FM. Further, we probe the dependence of these effects on the electrical conductivity and the band gap energy of the FM film varying from nearly insulating NiFe_{2}O_{4} to metallic Ni_{33}Fe_{67}. A proximity-induced ANE could only be identified in the metallic Pt/Ni_{33}Fe_{67} bilayer in contrast to Pt/NiFe_{2}O_{x} (x>0) samples. This is verified by the investigation of static magnetic proximity effects via x-ray resonant magnetic reflectivity.

Interface-Induced Phenomena in Magnetism

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

Longitudinal spin Seebeck effect contribution in transverse spin Seebeck effect experiments in Pt/YIG and Pt/NFO

The spin Seebeck effect, the generation of a spin current by a temperature gradient, has attracted great attention, but the interplay over a millimetre range along a thin ferromagnetic film as well as unintended side effects which hinder an unambiguous detection have evoked controversial discussions. Here, we investigate the inverse spin Hall voltage of a 10 nm thin Pt strip deposited on the magnetic insulators Y3Fe5O12 and NiFe2O4 with a temperature gradient in the film plane. We show characteristics typical of the spin Seebeck effect, although we do not observe the most striking features of the transverse spin Seebeck effect. Instead, we attribute the observed voltages to the longitudinal spin Seebeck effect generated by a contact tip induced parasitic out-of-plane temperature gradient, which depends on material, diameter and temperature of the tip.