Spin-Orbit Coupling at the Level of a Single Electron

Narrowband TADF emitters with high utilization of triplet excitons: theoretical insights and molecular design

Narrowband emitters with thermally activated delayed fluorescence (TADF) features, known as multi-resonant TADF (MR-TADF) emitters, are drawing increasing research interest owing to their properties of high efficiency and excellent color purity. However, MR-TADF-based devices often face serious efficiency roll-off at high luminance intensity, which could be attributed to undesired triplet-triplet annihilation (TTA) caused by the structural planarity and relatively small reverse intersystem crossing rate constants (krisc) of MR-TADF emitters. Herein, combining a sp3-C inserted strategy to suppress harmful bimolecular interactions and chalcogens to improve the krisc, a series of asymmetric narrowband emitters, namely, DMAC-O, DMAC-S, and DMAC-Se, have been theoretically designed to break the slow rate-limiting step of krisc of experimental BN-DMAC. For comparison, both O and Se atoms were doped into the MR skeleton to substitute two sp3-inserted units, yielding BN-O-Se. The combination of TD-DFT and the wavefunction-based STEOM-DLPNO-CCSD approach exhibits that those asymmetric molecules are promising for simultaneously exhibiting narrow emission spectral full-width at half-maximums (FWHMs) and high luminous efficiencies. The contributions of chalcogens to hole distributions result in red-shifted fluorescent peaks, and the asymmetric strategy also helps with twisted molecular configuration, which is beneficial for suppressing unfavorable TTA. Furthermore, the incorporation of chalcogens is sufficient to promote the intersystem crossing and reverse intersystem crossing channels of asymmetric emitters. More importantly, the doped heavy Se atom results in a significantly increased krisc of 2.32 × 106 s-1 for DMAC-Se, which is more than 200 times larger than 1.09 × 104 s-1 of pristine BN-DMAC. These results suggest that the combination of the heavy Se atom and an sp3-inserted unit is a feasible strategy for achieving poor planarity and significantly enhancing krisc, which will help in harvesting triplet excitons, thereby inhibiting efficiency roll-off in corresponding narrowband devices.

Design of Thermally Activated Delayed Fluorescence Materials with High Intersystem Crossing Efficiencies by Machine Learning-Assisted Virtual Screening

Efficient intersystem crossing (ISC) and reverse ISC (RISC) processes are of vital significance for thermally activated delayed fluorescence (TADF) materials to achieve 100% internal quantum efficiency. However, it is challenging to rapidly predict the ISC/RISC rates of large amounts of TADF materials and screen promising candidates because of their flexible molecular design. Here, we perform virtual screening of 564 candidates constructed from 20 unique building blocks linking in D-A, D-π-A, and D-A-D (D') configurations using the established machine learning models of GBRT and RF-GBRT-KNN with the Pearson's correlation coefficients (r) of 0.89 and 0.82, respectively. Novel descriptors of ΔE_LL, Polar, and ΔE_TT for predicting ISC/RISC rates were proposed, and nine TADF molecules with the predicted ISC and RISC rates of >7 × 10⁷ and 2 × 10⁵ s^-1, respectively, were revealed. We provide an efficient approach to predicting ISC and RISC rates of TADF molecules on a large scale, elucidating important building blocks and architectures to design high-performance optoelectronic materials for experimental explorations.

Real-Time Observation of Charge-Spin Cooperative Dynamics Driven by a Nonequilibrium Phonon Environment

We report on experimental observations of charge-spin cooperative dynamics of two-electron states in a GaAs double quantum dot located in a nonequilibrium phonon environment. When the phonon energy exceeds the lowest excitation energy in the quantum dot, the spin-flip rate of a single electron strongly enhances. In addition, originated from the spatial gradient of phonon density between the dots, the parallel spin states become more probable than the antiparallel ones. These results indicate that spin is essential for further demonstrations of single-electron thermodynamic systems driven by phonons, which will greatly contribute to understanding of the fundamental physics of thermoelectric devices.

Packing Effect on Light Emission of Naphthyridine-Based Luminophor: Insights from Quantum Mechanics and Quantum Mechanics/Molecular Mechanics Calculations

Luminescent properties of the naphthyridine-based luminophor, 2,7-di(9,9-dimethylacridin-10(9H)-yl)-1,8-naphthyridine (DMAC-ND), have been explored by using quantum mechanics and quantum mechanics/molecular mechanics calculations. Based on different packing models for DMAC-ND monomer in tetrahydrofuran (THF) solution and its crystal and amorphous aggregated states, the morphology dependence of light absorption and emission has been explored. Calculations reveal that the intersystem crossing rates (k_isc) from S₁ to T₁ are comparable with their corresponding non-radiative decay rates (k_nr) from S₁ to S₀ in crystal and amorphous phases, while the k_isc value in THF solution is 6 orders of magnitude smaller than its corresponding k_nr, suggesting that effective intersystem crossing (ISC) may occur only in the aggregated configurations. The predicted reverse intersystem crossing rates (k_risc) are also comparable with their corresponding non-radiative decay rates from T₁ to S₀, and there would be an effective upconversion process in the aggregated state. The predicted k_risc values show notable morphology and temperature dependences, and the aggregation and the increase in temperature can facilitate the reverse intersystem crossing process. Based on the independent gradient model and energy decomposition analysis, combined with the estimation of the Huang-Rhys factors, such remarkable packing effects on the luminescent properties of DMAC-ND can be ascribed into the strong intermolecular interactions and the restriction of low-frequency vibrations in the crystal and amorphous phases.

Gate-based high fidelity spin readout in a CMOS device

The engineering of a compact qubit unit cell that embeds all quantum functionalities is mandatory for large-scale integration. In addition, these functionalities should present the lowest error rate possible to successfully implement quantum error correction protocols¹. Electron spins in silicon quantum dots are particularly promising because of their high control fidelity^2-5 and their potential compatibility with complementary metal-oxide-semiconductor industrial platforms^6,7. However, an efficient and scalable spin readout scheme is still missing. Here we demonstrate a high fidelity and robust spin readout based on gate reflectometry in a complementary metal-oxide-semiconductor device that consists of a qubit dot and an ancillary dot coupled to an electron reservoir. This scalable method allows us to read out a spin in a single-shot manner with an average fidelity above 98% for a 0.5 ms integration time. To achieve such a fidelity, we combine radio-frequency gate reflectometry with a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high readout fidelity is fully preserved up to 0.5 K. This result holds particular relevance for the future cointegration of spin qubits and classical control electronics.

Angular momentum transfer from photon polarization to an electron spin in a gate-defined quantum dot

Gate-defined quantum dots (QDs) are such a highly-tunable quantum system in which single spins can be electrically coupled, manipulated, and measured. However, the spins in gate-defined QDs are lacking its interface to free-space photons. Here, we verify that a circularly-polarized single photon can excite a single electron spin via the transfer of angular momentum, measured using Pauli spin blockade (PSB) in a double QD. We monitor the inter-dot charge tunneling which only occur when the photo-electron spin in one QD is anti-parallel to the electron spin in the other. This allows us to detect single photo-electrons in the spin-up/down basis using PSB. The photon polarization dependence of the excited spin state was finally confirmed for the heavy-hole exciton excitation. The angular momentum transfer observed here is a fundamental step providing a route to instant injection of spins, distributing single spin information, and possibly towards extending quantum communication.

Gate-defined quantum dots offer a way to engineer electrically controllable quantum systems with potential for information processing. Here, the authors transfer angular momentum from the polarization of a single photon to the spin of a single electron in a gate-defined double quantum dot.

Optical Detection of Single-Electron Tunneling into a Semiconductor Quantum Dot

The maximum information of a dynamic quantum system is given by real-time detection of every quantum event, where the ultimate challenge is a stable, sensitive detector with high bandwidth. All physical information can then be drawn from a statistical analysis of the time traces. We demonstrate here an optical detection scheme based on the time-resolved resonance fluorescence on a single quantum dot. Single-electron resolution with high signal-to-noise ratio (4σ confidence) and high bandwidth of 10 kHz make it possible to record the individual quantum events of the transport dynamics. Full counting statistics with factorial cumulants gives access to the nonequilibrium dynamics of spin relaxation of a singly charged dot (γ_{↑↓}=3  ms^{-1}), even in an equilibrium transport measurement.

Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole

We perform Landau-Zener-Stückelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. Analogous to electron systems, at a magnetic field B=0 and high modulation frequencies, we observe photon-assisted tunneling between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flip interdot tunneling channel, introducing a distinct interference pattern at finite B. Magnetotransport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin conserving and spin flip, which form closed loops at critical magnetic fields. In one such loop, an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot

The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.

Promoting Singlet/triplet Exciton Transformation in Organic Optoelectronic Molecules: Role of Excited State Transition Configuration

Exciton transformation, a non-radiative process in changing the spin multiplicity of an exciton usually between singlet and triplet forms, has received much attention recently due to its crucial effects in manipulating optoelectronic properties for various applications. However, current understanding of exciton transformation mechanism does not extend far beyond a thermal equilibrium of two states with different multiplicity and it is a significant challenge to probe what exactly control the transformation between the highly active excited states. Here, based on the recent developments of three types of purely organic molecules capable of efficient spin-flipping, we perform ab initio structure/energy optimization and similarity/overlap extent analysis to theoretically explore the critical factors in controlling the transformation process of the excited states. The results suggest that the states having close energy levels and similar exciton characteristics with same transition configurations and high heteroatom participation are prone to facilitating exciton transformation. A basic guideline towards the molecular design of purely organic materials with facile exciton transformation ability is also proposed. Our discovery highlights systematically the critical importance of vertical transition configuration of excited states in promoting the singlet/triplet exciton transformation, making a key step forward in excited state tuning of purely organic optoelectronic materials.

Signatures of Hyperfine, Spin-Orbit, and Decoherence Effects in a Pauli Spin Blockade

We detect in real time interdot tunneling events in a weakly coupled two-electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times T_{d} and T_{b}, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to the lifting of a Pauli spin blockade, and the tunneling times ratio η=T_{b}/T_{d} characterizes the blockade efficiency. We find pronounced changes in the behavior of η upon increasing the magnetic field, with η increasing, saturating, and increasing again. We explain this behavior as due to the crossover of the dominant blockade-lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence.

Measuring the Degeneracy of Discrete Energy Levels Using a GaAs/AlGaAs Quantum Dot

We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance and the ability to perform precise and efficient measurements of energy-dependent tunneling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunneling with a precision enhanced by a feedback control. It is thoroughly tested by tuning orbital and spin degeneracies with electric and magnetic fields. The technique also lends itself to studying the connection between the ground-state degeneracy and the lifetime of the excited states.