1
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Luo Y, Liu XF, Liu ZH, Li W, Yan S, Gao H, Su H, Pan D, Zhao J, Wang JY, Xu H. One-Dimensional Quantum Dot Array Integrated with Charge Sensors in an InAs Nanowire. NANO LETTERS 2024; 24:14012-14019. [PMID: 39467266 DOI: 10.1021/acs.nanolett.4c03646] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/30/2024]
Abstract
We report an experimental study of a 1D quintuple-quantum-dot array integrated with two charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array, and corresponding charge stability diagrams are revealed with both direct current measurements and charge sensor signals. The one-dimensional quintuple-quantum-dot array is then tuned up, and its charge configurations are fully mapped out with the two charge sensors. The energy level of each dot in the array can be controlled individually using virtual gates. After that, four dots in the array are selected to form two double quantum dots, and ultrastrong inter-double-dot interaction is obtained. A theoretical simulation confirms the strong coupling strength between the two double quantum dots. The highly controllable one-dimensional quantum dot array is expected to be valuable for employing InAs nanowires to construct advanced quantum hardware in the future.
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Affiliation(s)
- Yi Luo
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
- Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China
| | - Xiao-Fei Liu
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Zhi-Hai Liu
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Weijie Li
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
| | - Shili Yan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Han Gao
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
| | - Haitian Su
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
- Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Ji-Yin Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Hongqi Xu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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2
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Messelot S, Aparicio N, de Seze E, Eyraud E, Coraux J, Watanabe K, Taniguchi T, Renard J. Direct Measurement of a sin(2φ) Current Phase Relation in a Graphene Superconducting Quantum Interference Device. PHYSICAL REVIEW LETTERS 2024; 133:106001. [PMID: 39303241 DOI: 10.1103/physrevlett.133.106001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Accepted: 07/18/2024] [Indexed: 09/22/2024]
Abstract
In a Josephson junction, the current phase relation relates the phase variation of the superconducting order parameter φ, between the two superconducting leads connected through a weak link, to the dissipationless current. This relation is the fingerprint of the junction. It is usually dominated by a sin(φ) harmonic, however, its precise knowledge is necessary to design superconducting quantum circuits with tailored properties. Here, we directly measure the current phase relation of a superconducting quantum interference device made with gate-tunable graphene Josephson junctions and we show that it can behave as a sin(2φ) Josephson element, free of the traditionally dominant sin(φ) harmonic. Such element will be instrumental for the development of superconducting quantum bits protected from decoherence.
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3
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Li G, Shi X, Lin T, Yang G, Rossi M, Badawy G, Zhang Z, Shi J, Qian D, Lu F, Gu L, Wang A, Tong B, Li P, Lyu Z, Liu G, Qu F, Dou Z, Pan D, Zhao J, Zhang Q, Bakkers EPAM, Nowak MP, Wójcik P, Lu L, Shen J. Versatile Method of Engineering the Band Alignment and the Electron Wavefunction Hybridization of Hybrid Quantum Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403176. [PMID: 39082207 DOI: 10.1002/adma.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 07/15/2024] [Indexed: 09/19/2024]
Abstract
Hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the integration of the properties of both materials, which relies on the interface details and the resulting coupling strength and wavefunction hybridization. However, until now, none of the experiments have reported good control of the band alignment of the interface, as well as its tunability to the coupling and hybridization. Here, the interface is modified by inducing specific argon milling while maintaining its high quality, e.g., atomic connection, which results in a large induced superconducting gap and ballistic transport. By comparing with Schrödinger-Poisson calculations, it is proven that this method can vary the band bending/coupling strength and the electronic spatial distribution. In the strong coupling regime, the coexistence and tunability of crossed Andreev reflection and elastic co-tunneling-key ingredients for the Kitaev chain-are confirmed. This method is also generic for other materials and achieves a hard and huge superconducting gap in lead and indium antimonide nanowire (Pb-InSb) devices. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.
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Affiliation(s)
- Guoan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaofan Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guang Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Marco Rossi
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Zhiyuan Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiayu Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Degui Qian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Fang Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Anqi Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bingbing Tong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Peiling Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Zhaozheng Lyu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Fanming Qu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Ziwei Dou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Erik P A M Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Michał P Nowak
- AGH University of Krakow, Academic Centre for Materials and Nanotechnology, al. A. Mickiewicza 30, Krakow, 30-059, Poland
| | - Paweł Wójcik
- AGH University of Krakow, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, Krakow, 30-059, Poland
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
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4
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Zheng H, Cheung LY, Sangwan N, Kononov A, Haller R, Ridderbos J, Ciaccia C, Ungerer JH, Li A, Bakkers EP, Baumgartner A, Schönenberger C. Coherent Control of a Few-Channel Hole Type Gatemon Qubit. NANO LETTERS 2024; 24:7173-7179. [PMID: 38848282 PMCID: PMC11194827 DOI: 10.1021/acs.nanolett.4c00770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 05/03/2024] [Accepted: 05/06/2024] [Indexed: 06/09/2024]
Abstract
Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained using a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junction is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions.
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Affiliation(s)
- Han Zheng
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Luk Yi Cheung
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Nikunj Sangwan
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Artem Kononov
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Roy Haller
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Joost Ridderbos
- MESA+
Institute for Nanotechnology University of Twente, 7500 AE Enschede, The Netherlands
| | - Carlo Ciaccia
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Jann Hinnerk Ungerer
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Ang Li
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P.A.M. Bakkers
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Andreas Baumgartner
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, 4056 Basel, Switzerland
| | - Christian Schönenberger
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, 4056 Basel, Switzerland
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5
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Ryu Y, Jeong J, Suh J, Kim J, Choi H, Cha J. Utilizing Gate-Controlled Supercurrent for All-Metallic Tunable Superconducting Microwave Resonators. NANO LETTERS 2024; 24:1223-1230. [PMID: 38232153 DOI: 10.1021/acs.nanolett.3c04080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Hybridizing a microwave mode with a quantum state requires precise frequency matching of a superconducting microwave resonator and the corresponding quantum object. However, fabrication always brings imperfections in geometry and material properties, causing deviations from the desired operating frequencies. An effective and universal strategy for their resonant coupling is to tune the frequency of a resonator, as quantum states like phonons are hardly tunable. Here, we demonstrate gate-tunable, titanium-nitride (TiN)-based superconducting resonators by implementing a nanowire inductor whose kinetic inductance is tuned via the gate-controlled supercurrent (GCS) effect. We investigate their responses for different gate biases and observe 4% (∼150 MHz) frequency tuning with decreasing internal quality factors. We also perform temperature-controlled experiments to support phonon-related mechanisms in the GCS effect and the resonance tuning. The GCS effect-based method proposed in this study provides an effective route for locally tunable resonators that can be employed in various hybrid quantum devices.
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Affiliation(s)
- Younghun Ryu
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinhoon Jeong
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
| | - Junho Suh
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
| | - Jihwan Kim
- Agency For Defense Development (ADD), Daejeon 34186, South Korea
| | - Hyoungsoon Choi
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinwoong Cha
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
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6
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Elfeky B, Cuozzo JJ, Lotfizadeh N, Schiela WF, Farzaneh SM, Strickland WM, Langone D, Rossi E, Shabani J. Evolution of 4π-Periodic Supercurrent in the Presence of an In-Plane Magnetic Field. ACS NANO 2023; 17:4650-4658. [PMID: 36800544 PMCID: PMC10018771 DOI: 10.1021/acsnano.2c10880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Accepted: 02/15/2023] [Indexed: 06/18/2023]
Abstract
In the presence of a 4π-periodic contribution to the current phase relation, for example in topological Josephson junctions, odd Shapiro steps are expected to be missing. While missing odd Shapiro steps have been observed in several material systems and interpreted in the context of topological superconductivity, they have also been observed in topologically trivial junctions. Here, we study the evolution of such trivial missing odd Shapiro steps in Al-InAs junctions in the presence of an in-plane magnetic field Bθ. We find that the odd steps reappear at a crossover Bθ value, exhibiting an in-plane field angle anisotropy that depends on spin-orbit coupling effects. We interpret this behavior by theoretically analyzing the Andreev bound state spectrum and the transitions induced by the nonadiabatic dynamics of the junction and attribute the observed anisotropy to mode-to-mode coupling. Our results highlight the complex phenomenology of missing Shapiro steps and the underlying current phase relations in planar Josephson junctions designed to realize Majorana states.
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Affiliation(s)
- Bassel
Heiba Elfeky
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Joseph J. Cuozzo
- Department
of Physics, William & Mary, Williamsburg, Virginia 23187, United States
| | - Neda Lotfizadeh
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - William F. Schiela
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Seyed M. Farzaneh
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - William M. Strickland
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Dylan Langone
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Enrico Rossi
- Department
of Physics, William & Mary, Williamsburg, Virginia 23187, United States
| | - Javad Shabani
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
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7
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Sponfeldner L, Leisgang N, Shree S, Paradisanos I, Watanabe K, Taniguchi T, Robert C, Lagarde D, Balocchi A, Marie X, Gerber IC, Urbaszek B, Warburton RJ. Capacitively and Inductively Coupled Excitons in Bilayer MoS_{2}. PHYSICAL REVIEW LETTERS 2022; 129:107401. [PMID: 36112433 DOI: 10.1103/physrevlett.129.107401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 01/21/2022] [Accepted: 06/30/2022] [Indexed: 06/15/2023]
Abstract
The coupling of intralayer A and B excitons and interlayer excitons (IE) is studied in a two-dimensional semiconductor, homobilayer MoS_{2}. It is shown that the measured optical susceptibility reveals both the magnitude and the phase of the coupling constants. The IE and B excitons couple via a 0-phase (capacitive) coupling; the IE and A excitons couple via a π-phase (inductive) coupling. The IE-B and IE-A coupling mechanisms are interpreted as hole tunneling and electron-hole exchange, respectively. The couplings imply that even in a monolayer, the A and B excitons have mixed spin states. Using the IE as a sensor, the A-B intravalley exchange coupling is determined. Finally, we realize a bright and highly tunable lowest-energy momentum-direct exciton at high electric fields.
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Affiliation(s)
- Lukas Sponfeldner
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Nadine Leisgang
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Shivangi Shree
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Ioannis Paradisanos
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Cedric Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Delphine Lagarde
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Andrea Balocchi
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Xavier Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Iann C Gerber
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Richard J Warburton
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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8
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Partial randomized benchmarking. Sci Rep 2022; 12:10129. [PMID: 35710571 PMCID: PMC9203587 DOI: 10.1038/s41598-022-13813-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2021] [Accepted: 05/26/2022] [Indexed: 11/08/2022] Open
Abstract
In randomized benchmarking of quantum logical gates, partial twirling can be used for simpler implementation, better scaling, and higher accuracy and reliability. For instance, for two-qubit gates, single-qubit twirling is easier to realize than full averaging. We analyze such simplified, partial twirling and demonstrate that, unlike for the standard randomized benchmarking, the measured decay of fidelity is a linear combination of exponentials with different decay rates (3 for two qubits and single-bit twirling). The evolution with the sequence length is governed by an iteration matrix, whose spectrum gives the decay rates. For generic two-qubit gates one slowest exponential dominates and characterizes gate errors in three channels. Its decay rate is close, but different from that in the standard randomized benchmarking, and we find the leading correction. Using relations to the local invariants of two-qubit gates we identify all exceptional gates with several slow exponentials and analyze possibilities to extract their decay rates from the measured curves.
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9
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Phan D, Senior J, Ghazaryan A, Hatefipour M, Strickland WM, Shabani J, Serbyn M, Higginbotham AP. Detecting Induced p±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit. PHYSICAL REVIEW LETTERS 2022; 128:107701. [PMID: 35333085 DOI: 10.1103/physrevlett.128.107701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 12/15/2021] [Accepted: 01/31/2022] [Indexed: 06/14/2023]
Abstract
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.
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Affiliation(s)
- D Phan
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - J Senior
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - A Ghazaryan
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - M Hatefipour
- Department of Physics, New York University, New York, New York 10003, USA
| | - W M Strickland
- Department of Physics, New York University, New York, New York 10003, USA
| | - J Shabani
- Department of Physics, New York University, New York, New York 10003, USA
| | - M Serbyn
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
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10
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Bobkova IV, Bobkov AM, Silaev MA. Dynamic Spin-Triplet Order Induced by Alternating Electric Fields in Superconductor-Ferromagnet-Superconductor Josephson Junctions. PHYSICAL REVIEW LETTERS 2021; 127:147701. [PMID: 34652200 DOI: 10.1103/physrevlett.127.147701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Accepted: 09/01/2021] [Indexed: 06/13/2023]
Abstract
Dynamic states offer extended possibilities to control the properties of quantum matter. Recent efforts are focused on studying the ordered states which appear exclusively under the time-dependent drives. Here, we demonstrate a class of systems which feature dynamic spin-triplet superconducting order stimulated by the alternating electric field. The effect is based on the interplay of ferromagnetism, interfacial spin-orbital coupling, and the condensate motion driven by the field, which converts hidden static p-wave order, produced by the joint action of the ferromagnetism and the spin-orbital coupling, into dynamic s-wave equal-spin-triplet correlations. We demonstrate that the critical current of Josephson junctions hosting these states is proportional to the electromagnetic power, supplied either by the external irradiation or by the ac current source. Based on these unusual properties we propose the scheme of a Josephson transistor which can be switched by the ac voltage and demonstrates an even-numbered sequence of Shapiro steps. Combining the photoactive Josephson junctions with recently discovered Josephson phase batteries we find photomagnetic SQUID devices which can generate spontaneous magnetic fields while being exposed to irradiation.
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Affiliation(s)
- I V Bobkova
- Institute of Solid State Physics, Chernogolovka, Moscow region, 142432 Russia
- Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- National Research University Higher School of Economics, Moscow 101000, Russia
| | - A M Bobkov
- Institute of Solid State Physics, Chernogolovka, Moscow region, 142432 Russia
| | - M A Silaev
- Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Department of Physics, Nanoscience Center, University of Jyväskylä, 40014 Jyväskylä, Finland
- Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105, Russia
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11
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Xu J, Zhong C, Han X, Jin D, Jiang L, Zhang X. Coherent Gate Operations in Hybrid Magnonics. PHYSICAL REVIEW LETTERS 2021; 126:207202. [PMID: 34110202 DOI: 10.1103/physrevlett.126.207202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2020] [Revised: 04/21/2021] [Accepted: 04/22/2021] [Indexed: 06/12/2023]
Abstract
Electromagnonics-the hybridization of spin excitations and electromagnetic waves-has been recognized as a promising candidate for coherent information processing in recent years. Among its various implementations, the lack of available approaches for real-time manipulation on the system dynamics has become a common and urgent limitation. In this work, by introducing a fast and uniform modulation technique, we successfully demonstrate a series of benchmark coherent gate operations in hybrid magnonics, including semiclassical analogies of Landau-Zener transitions, Rabi oscillations, Ramsey interference, and controlled mode swap operations. Our approach lays the groundwork for dynamical manipulation of coherent signals in hybrid magnonics and can be generalized to a broad range of applications.
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Affiliation(s)
- Jing Xu
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Changchun Zhong
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Xu Han
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Dafei Jin
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Liang Jiang
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Xufeng Zhang
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
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12
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Sabonis D, Erlandsson O, Kringhøj A, van Heck B, Larsen TW, Petkovic I, Krogstrup P, Petersson KD, Marcus CM. Destructive Little-Parks Effect in a Full-Shell Nanowire-Based Transmon. PHYSICAL REVIEW LETTERS 2020; 125:156804. [PMID: 33095630 DOI: 10.1103/physrevlett.125.156804] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Accepted: 08/26/2020] [Indexed: 06/11/2023]
Abstract
A semiconductor transmon with an epitaxial Al shell fully surrounding an InAs nanowire core is investigated in the low E_{J}/E_{C} regime. Little-Parks oscillations as a function of flux along the hybrid wire axis are destructive, creating lobes of reentrant superconductivity separated by a metallic state at a half quantum of applied flux. In the first lobe, phase winding around the shell can induce topological superconductivity in the core. Coherent qubit operation is observed in both the zeroth and first lobes. Splitting of parity bands by coherent single-electron coupling across the junction is not resolved beyond line broadening, placing a bound on Majorana coupling, E_{M}/h<10 MHz, much smaller than the Josephson coupling E_{J}/h∼4.7 GHz.
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Affiliation(s)
- Deividas Sabonis
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Oscar Erlandsson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Anders Kringhøj
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Bernard van Heck
- Microsoft Quantum Lab Delft, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Thorvald W Larsen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Ivana Petkovic
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Materials Lab-Copenhagen, 2800 Lyngby, Denmark
| | - Karl D Petersson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Charles M Marcus
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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13
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De Simoni G, Paolucci F, Puglia C, Giazotto F. Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions. ACS NANO 2019; 13:7871-7876. [PMID: 31244044 DOI: 10.1021/acsnano.9b02209] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We demonstrate proximity-based all-metallic mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature Tc down to 50 mK in the presence of both electric and magnetic fields. The ability of a static electric field-applied by means of a lateral gate electrode-to suppress the critical current Is in a proximity-induced superconductor is proven for both positive and negative gate voltage values. Is reached typically about one-third of its initial value, saturating at high gate voltages. The transconductance of our SNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamental physics side, our results suggest that the mechanism at the basis of the observed phenomenon is quite general and does not rely on the existence of a true pairing potential, but rather the presence of superconducting correlations is enough for the effect to occur. On the technological side, our findings widen the family of materials available for the implementation of all-metallic field-effect transistors to synthetic proximity-induced superconductors.
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Affiliation(s)
- Giorgio De Simoni
- NEST Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - Federico Paolucci
- NEST Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
- INFN Sezione di Pisa , Largo Bruno Pontecorvo 3 , 56127 Pisa , Italy
| | - Claudio Puglia
- NEST Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
- Dipartimento di Fisica dell'Università di Pisa Largo Pontecorvo 3 , I-56127 Pisa , Italy
| | - Francesco Giazotto
- NEST Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
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14
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Wang JIJ, Rodan-Legrain D, Bretheau L, Campbell DL, Kannan B, Kim D, Kjaergaard M, Krantz P, Samach GO, Yan F, Yoder JL, Watanabe K, Taniguchi T, Orlando TP, Gustavsson S, Jarillo-Herrero P, Oliver WD. Coherent control of a hybrid superconducting circuit made with graphene-based van der Waals heterostructures. NATURE NANOTECHNOLOGY 2019; 14:120-125. [PMID: 30598526 DOI: 10.1038/s41565-018-0329-2] [Citation(s) in RCA: 44] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2018] [Accepted: 11/19/2018] [Indexed: 06/09/2023]
Abstract
Quantum coherence and control is foundational to the science and engineering of quantum systems1,2. In van der Waals materials, the collective coherent behaviour of carriers has been probed successfully by transport measurements3-6. However, temporal coherence and control, as exemplified by manipulating a single quantum degree of freedom, remains to be verified. Here we demonstrate such coherence and control of a superconducting circuit incorporating graphene-based Josephson junctions. Furthermore, we show that this device can be operated as a voltage-tunable transmon qubit7-9, whose spectrum reflects the electronic properties of massless Dirac fermions travelling ballistically4,5. In addition to the potential for advancing extensible quantum computing technology, our results represent a new approach to studying van der Waals materials using microwave photons in coherent quantum circuits.
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Affiliation(s)
- Joel I-Jan Wang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Daniel Rodan-Legrain
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Landry Bretheau
- Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS, CEA, Palaiseau, France
| | - Daniel L Campbell
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Bharath Kannan
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - David Kim
- Massachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USA
| | - Morten Kjaergaard
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Philip Krantz
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Gabriel O Samach
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
- Massachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USA
| | - Fei Yan
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jonilyn L Yoder
- Massachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USA
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan
| | - Terry P Orlando
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Simon Gustavsson
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | - William D Oliver
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Massachusetts Institute of Technology (MIT) Lincoln Laboratory, Lexington, MA, USA.
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15
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Casparis L, Connolly MR, Kjaergaard M, Pearson NJ, Kringhøj A, Larsen TW, Kuemmeth F, Wang T, Thomas C, Gronin S, Gardner GC, Manfra MJ, Marcus CM, Petersson KD. Superconducting gatemon qubit based on a proximitized two-dimensional electron gas. NATURE NANOTECHNOLOGY 2018; 13:915-919. [PMID: 30038371 DOI: 10.1038/s41565-018-0207-y] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2017] [Accepted: 06/19/2018] [Indexed: 06/08/2023]
Abstract
The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition frequencies1 and interqubit coupling strengths2 to the gain of parametric amplifiers3 for quantum-limited readout. The inductance is either set by tailoring the metal oxide dimensions of single JJs, or magnetically tuned by parallelizing multiple JJs in superconducting quantum interference devices with local current-biased flux lines. JJs based on superconductor-semiconductor hybrids represent a tantalizing all-electric alternative. The gatemon is a recently developed transmon variant that employs locally gated nanowire superconductor-semiconductor JJs for qubit control4,5. Here we go beyond proof-of-concept and demonstrate that semiconducting channels etched from a wafer-scale two-dimensional electron gas (2DEG) are a suitable platform for building a scalable gatemon-based quantum computer. We show that 2DEG gatemons meet the requirements6 by performing voltage-controlled single qubit rotations and two-qubit swap operations. We measure qubit coherence times up to ~2 μs, limited by dielectric loss in the 2DEG substrate.
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Affiliation(s)
- Lucas Casparis
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Malcolm R Connolly
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Morten Kjaergaard
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Natalie J Pearson
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Theoretische Physik, ETH Zürich, Zürich, Switzerland
| | - Anders Kringhøj
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Thorvald W Larsen
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Ferdinand Kuemmeth
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Tiantian Wang
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- Station Q Purdue, and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Candice Thomas
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- Station Q Purdue, and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Sergei Gronin
- Station Q Purdue, and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Geoffrey C Gardner
- Station Q Purdue, and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Michael J Manfra
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- Station Q Purdue, and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
| | - Charles M Marcus
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Karl D Petersson
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
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16
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Keith AC, Baldwin CH, Glancy S, Knill E. Joint Quantum-State and Measurement Tomography with Incomplete Measurements. PHYSICAL REVIEW. A 2018; 98:042318. [PMID: 39450265 PMCID: PMC11500458 DOI: 10.1103/physreva.98.042318] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2024]
Abstract
Estimation of quantum states and measurements is crucial for the implementation of quantum information protocols. The standard method for each is quantum tomography. However, quantum tomography suffers from systematic errors caused by imperfect knowledge of the system. We present a procedure to simultaneously characterize quantum states and measurements that mitigates systematic errors by use of a single high-fidelity state preparation and a limited set of high-fidelity unitary operations. Such states and operations are typical of many state-of-the-art systems. For this situation we design a set of experiments and an optimization algorithm that alternates between maximizing the likelihood with respect to the states and measurements to produce estimates of each. In some cases, the procedure does not enable unique estimation of the states. For these cases, we show how one may identify a set of density matrices compatible with the measurements and use a semi-definite program to place bounds on the state's expectation values. We demonstrate the procedure on data from a simulated experiment with two trapped ions.
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Affiliation(s)
- Adam C. Keith
- Applied and Computational Mathematics Division, National Institute of Standards and Technology, Boulder, Colorado, 80305, USA
- Department of Physics, University of Colorado, Boulder, Colorado, 80309, USA
| | - Charles H. Baldwin
- Applied and Computational Mathematics Division, National Institute of Standards and Technology, Boulder, Colorado, 80305, USA
| | - Scott Glancy
- Applied and Computational Mathematics Division, National Institute of Standards and Technology, Boulder, Colorado, 80305, USA
| | - E. Knill
- Applied and Computational Mathematics Division, National Institute of Standards and Technology, Boulder, Colorado, 80305, USA
- Center for Theory of Quantum Matter, University of Colorado, Boulder, Colorado 80309, USA
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17
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De Simoni G, Paolucci F, Solinas P, Strambini E, Giazotto F. Metallic supercurrent field-effect transistor. NATURE NANOTECHNOLOGY 2018; 13:802-805. [PMID: 29967460 DOI: 10.1038/s41565-018-0190-3] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2018] [Accepted: 06/07/2018] [Indexed: 06/08/2023]
Abstract
In their original formulation of superconductivity, the London brothers predicted1 the exponential suppression of an electrostatic field inside a superconductor over the so-called London penetration depth2-4, λL. Despite a few experiments indicating hints of perturbation induced by electrostatic fields5-7, no clue has been provided so far on the possibility to manipulate metallic superconductors via the field effect. Here, we report field-effect control of the supercurrent in all-metallic transistors made of different Bardeen-Cooper-Schrieffer superconducting thin films. At low temperature, our field-effect transistors show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as ±40 V in titanium-based devices. This bipolar field effect persists up to ~85% of the critical temperature (~0.41 K), and in the presence of sizable magnetic fields. A similar behaviour is observed in aluminium thin-film field-effect transistors. A phenomenological theory accounts for our observations, and points towards the interpretation in terms of an electric-field-induced perturbation propagating inside the superconducting film. In our understanding, this affects the pairing potential and quenches the supercurrent. These results could represent a groundbreaking asset for the realization of all-metallic superconducting field-effect electronics and leading-edge quantum information architectures8,9.
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Affiliation(s)
- Giorgio De Simoni
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy
| | - Federico Paolucci
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy
| | | | - Elia Strambini
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy
| | - Francesco Giazotto
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy.
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18
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Mizokuchi R, Maurand R, Vigneau F, Myronov M, De Franceschi S. Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium. NANO LETTERS 2018; 18:4861-4865. [PMID: 29995419 DOI: 10.1021/acs.nanolett.8b01457] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2 e2/ h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics.
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Affiliation(s)
- R Mizokuchi
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
| | - R Maurand
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
| | - F Vigneau
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
| | - M Myronov
- Department of Physics , University of Warwick , Coventry CV4 7AL , United Kingdom
| | - S De Franceschi
- Université Grenoble Alpes & CEA, INAC-PHELIQS , F-38000 Grenoble , France
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19
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Paolucci F, De Simoni G, Strambini E, Solinas P, Giazotto F. Ultra-Efficient Superconducting Dayem Bridge Field-Effect Transistor. NANO LETTERS 2018; 18:4195-4199. [PMID: 29894197 DOI: 10.1021/acs.nanolett.8b01010] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric-field-induced control of charge-carrier concentration to modulate the channel superconducting properties. Despite the fact that the field-effect is believed to be ineffective for superconducting metals, recent experiments showed electric-field-dependent modulation of the critical current ( IC) in a fully metallic transistor. However, the grounding mechanism of this phenomenon is not completely understood. Here, we show the experimental realization of Ti-based Dayem bridge field-effect transistors (DB-FETs) able to control the IC of the superconducting channel. Our easy fabrication process for DB-FETs show symmetric full suppression of IC for applied critical gate voltages as low as VGC ≃ ±8 V at temperatures reaching about the 85% of the record critical temperature, TC ≃ 550 mK, for titanium. The gate-independent TC and normal-state resistance ( RN) coupled with the increase of resistance in the superconducting state ( RS) for gate voltages close to the critical value ( VGC) suggest the creation of field-effect induced metallic puddles in the superconducting sea. Our devices show extremely high values of transconductance (| gmMAX| ≃ 15 μA/V at VG ≃ ±6.5 V) and variations of Josephson kinetic inductance ( LK) with VG of 2 orders of magnitude. Therefore, the DB-FET appears as an ideal candidate for the realization of superconducting electronics, superconducting qubits, and tunable interferometers as well as photon detectors.
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Affiliation(s)
- Federico Paolucci
- NEST , Instituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - Giorgio De Simoni
- NEST , Instituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - Elia Strambini
- NEST , Instituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - Paolo Solinas
- SPIN-CNR , Via Dodecaneso 33 , I-16146 Genova , Italy
| | - Francesco Giazotto
- NEST , Instituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
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20
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Luthi F, Stavenga T, Enzing OW, Bruno A, Dickel C, Langford NK, Rol MA, Jespersen TS, Nygård J, Krogstrup P, DiCarlo L. Evolution of Nanowire Transmon Qubits and Their Coherence in a Magnetic Field. PHYSICAL REVIEW LETTERS 2018; 120:100502. [PMID: 29570312 DOI: 10.1103/physrevlett.120.100502] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2017] [Indexed: 06/08/2023]
Abstract
We present an experimental study of flux- and gate-tunable nanowire transmons with state-of-the-art relaxation time allowing quantitative extraction of flux and charge noise coupling to the Josephson energy. We evidence coherence sweet spots for charge, tuned by voltage on a proximal side gate, where first order sensitivity to switching two-level systems and background 1/f noise is minimized. Next, we investigate the evolution of a nanowire transmon in a parallel magnetic field up to 70 mT, the upper bound set by the closing of the induced gap. Several features observed in the field dependence of qubit energy relaxation and dephasing times are not fully understood. Using nanowires with a thinner, partially covering Al shell will enable operation of these circuits up to 0.5 T, a regime relevant for topological quantum computation and other applications.
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Affiliation(s)
- F Luthi
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - T Stavenga
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - O W Enzing
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - A Bruno
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - C Dickel
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - N K Langford
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - M A Rol
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - T S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, DK-2100 Copenhagen, Denmark
| | - J Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, DK-2100 Copenhagen, Denmark
- Nano-Science Center, Niels Bohr Institute, University of Copenhagen, DK-2100 Copenhagen, Denmark
| | - P Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, DK-2100 Copenhagen, Denmark
| | - L DiCarlo
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
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21
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Wendin G. Quantum information processing with superconducting circuits: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2017; 80:106001. [PMID: 28682303 DOI: 10.1088/1361-6633/aa7e1a] [Citation(s) in RCA: 123] [Impact Index Per Article: 15.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
During the last ten years, superconducting circuits have passed from being interesting physical devices to becoming contenders for near-future useful and scalable quantum information processing (QIP). Advanced quantum simulation experiments have been shown with up to nine qubits, while a demonstration of quantum supremacy with fifty qubits is anticipated in just a few years. Quantum supremacy means that the quantum system can no longer be simulated by the most powerful classical supercomputers. Integrated classical-quantum computing systems are already emerging that can be used for software development and experimentation, even via web interfaces. Therefore, the time is ripe for describing some of the recent development of superconducting devices, systems and applications. As such, the discussion of superconducting qubits and circuits is limited to devices that are proven useful for current or near future applications. Consequently, the centre of interest is the practical applications of QIP, such as computation and simulation in Physics and Chemistry.
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Affiliation(s)
- G Wendin
- Department of Microtechnology and Nanoscience-MC2, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
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22
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Gooth J, Borg M, Schmid H, Schaller V, Wirths S, Moselund K, Luisier M, Karg S, Riel H. Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects. NANO LETTERS 2017; 17:2596-2602. [PMID: 28334529 DOI: 10.1021/acs.nanolett.7b00400] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.
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Affiliation(s)
- Johannes Gooth
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Mattias Borg
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Vanessa Schaller
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Stephan Wirths
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Kirsten Moselund
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Mathieu Luisier
- ETH Zurich, Integrated Systems Laboratory , Gloriastrasse 35, 8092 Zurich, Switzerland
| | - Siegfried Karg
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Heike Riel
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
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