Intertwined Rashba, Dirac, and Weyl Fermions in Hexagonal Hyperferroelectrics

Rashba and Dresselhaus effects in doped methylammonium lead halide perovskite MAPbI3

Inorganic-organic lead halide perovskites, particularly methylammonium lead halide (MAPbI3) perovskite, have been regarded as promising materials for optoelectronics and spintronics. However, the practical applications of these perovskites are limited by lead toxicity and instability under air and pressure. This study investigates the substitution of Pb with Sn and Ge in cubic MAPbI3 perovskite. The properties of the resulting hybrid perovskites are compared using state-of-the-art first-principles-based methodologies, viz., density functional theory (DFT) with generalized gradient approximation (PBE) and hybrid functional (HSE06), in conjunction with spin-orbit coupling (SOC). Here, we mainly study the Rashba-Dresselhaus (RD) effect, which arises due to two major mechanisms: (i) the breaking of inversion symmetry (static and dynamic) and (ii) SOC, originating from the presence of heavy elements. We find significant spin-splitting effects in the conduction band minimum and valence band maximum for hybrid perovskites. To gain a deeper understanding of the observed spin-splitting, the spin textures are analyzed, and Rashba coefficients are calculated. We find that the Dresselhaus effect comes into play in substituted hybrid structures in addition to the usual Rashba effect observed in the pristine compound. Additionally, we observe that the strength of Rashba spin-splitting is substantially tuned by the application of uniaxial strain (±5%). Moreover, certain hybrid perovskites exhibit mechanical stability and ductility, making them potential candidates in perovskite-based optoelectronics and spintronics applications.

Origin of Rashba Spin Splitting and Strain Tunability in Ferroelectric Bulk CsPbF3

Spin-orbit coupling (SOC) in conjunction with broken inversion symmetry acts as a key ingredient for several intriguing quantum phenomena, viz., Rashba-Dresselhaus (RD) effect. The coexistence of spontaneous polarization and the RD effect in ferroelectric (FE) materials enables the electrical control of spin degrees of freedom. Here, we explore the FE lead halide perovskite CsPbF₃ as a potential candidate in the field of spintronics by employing state-of-the-art first-principles-based methodologies, viz., density functional theory (DFT) with semilocal and hybrid functional (HSE06) combined with SOC and many-body perturbation theory (G₀W₀). For a deeper understanding of the observed spin splitting, the spin textures are analyzed using the k.p model Hamiltonian. We find there is no out-of-plane spin component indicating that the Rashba splitting dominates over Dresselhaus splitting. We also observe that the strength of Rashba spin splitting can be substantially tuned on application of uniaxial strain (±5%). More interestingly, we notice reversible spin textures by switching the FE polarization in CsPbF₃ perovskite, making it potent for perovskite-based spintronic applications.

A chiral switchable photovoltaic ferroelectric 1D perovskite

Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral. Spectroscopic and structural analysis, and first-principles calculations, determine the material to be a previously unknown low-dimensional hybrid perovskite (R)-(-)-1-cyclohexylethylammonium/(S)-(+)-1 cyclohexylethylammonium) PbI₃. Optical and electrical measurements characterize its semiconducting, ferroelectric, switchable pyroelectricity and switchable photoferroelectric properties. Temperature dependent structural, dielectric and transport measurements reveal a ferroelectric-paraelectric phase transition. Circular dichroism spectroscopy confirms its chirality. The development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field and chiral enantiomer-dependent Rashba-Dresselhaus splitting and circular photogalvanic effects.

High-throughput Discovery of Topologically Non-trivial Materials using Spin-orbit Spillage

We present a novel methodology to identify topologically non-trivial materials based on band inversion induced by spin-orbit coupling (SOC) effect. Specifically, we compare the density functional theory (DFT) based wavefunctions with and without spin-orbit coupling and compute the 'spin-orbit-spillage' as a measure of band-inversion. Due to its ease of calculation, without any need for symmetry analysis or dense k-point interpolation, the spillage is an excellent tool for identifying topologically non-trivial materials. Out of 30000 materials available in the JARVIS-DFT database, we applied this methodology to more than 4835 non-magnetic materials consisting of heavy atoms and low bandgaps. We found 1868 candidate materials with high-spillage (using 0.5 as a threshold). We validated our methodology by carrying out conventional Wannier-interpolation calculations for 289 candidate materials. We demonstrate that in addition to Z2 topological insulators, this screening method successfully identified many semimetals and topological crystalline insulators. Importantly, our approach is applicable to the investigation of disordered or distorted as well as magnetic materials, because it is not based on symmetry considerations. We discuss some individual example materials, as well as trends throughout our dataset, which is available at the websites: https://www.ctcms.nist.gov/~knc6/JVASP.html and https://jarvis.nist.gov/ .

Topological Semimetals in the SnTe Material Class: Nodal Lines and Weyl Points

We theoretically show that IV-VI semiconducting compounds with low-temperature rhombohedral crystal structure represent a new potential platform for topological semimetals. By means of minimal k·p models, we find that the two-step structural symmetry reduction of the high-temperature rocksalt crystal structure, comprising a rhombohedral distortion along the [111] direction followed by a relative shift of the cation and anion sublattices, gives rise to topologically protected Weyl semimetal and nodal line semimetal phases. We derive general expressions for the nodal features and apply our results to SnTe, showing explicitly how Weyl points and nodal lines emerge in this system. Experimentally, the topological semimetals could potentially be realized in the low-temperature ferroelectric phase of SnTe, GeTe, and related alloys.

Dirac-Weyl Semimetal: Coexistence of Dirac and Weyl Fermions in Polar Hexagonal ABC Crystals

We propose that the noncentrosymmetric LiGaGe-type hexagonal ABC crystal SrHgPb realizes a new type of topological semimetal that hosts both Dirac and Weyl points in momentum space. The symmetry-protected Dirac points arise due to a band inversion and are located on the sixfold rotation z axis, whereas the six pairs of Weyl points related by sixfold symmetry are located on the perpendicular k_{z}=0 plane. By studying the electronic structure as a function of the buckling of the HgPb layer, which is the origin of inversion symmetry breaking, we establish that the coexistence of Dirac and Weyl fermions defines a phase separating two topologically distinct Dirac semimetals. These two Dirac semimetals are distinguished by the Z_{2} index of the k_{z}=0 plane and the corresponding presence or absence of 2D Dirac fermions on side surfaces. We formalize our first-principles calculations by deriving and studying a low-energy model Hamiltonian describing the Dirac-Weyl semimetal phase. We conclude by proposing several other materials in the noncentrosymmetric ABC material class, in particular SrHgSn and CaHgSn, as candidates for realizing the Dirac-Weyl semimetal.

Tunable metal-insulator transition, Rashba effect and Weyl Fermions in a relativistic charge-ordered ferroelectric oxide

Controllable metal-insulator transitions (MIT), Rashba-Dresselhaus (RD) spin splitting, and Weyl semimetals are promising schemes for realizing processing devices. Complex oxides are a desirable materials platform for such devices, as they host delicate and tunable charge, spin, orbital, and lattice degrees of freedoms. Here, using first-principles calculations and symmetry analysis, we identify an electric-field tunable MIT, RD effect, and Weyl semimetal in a known, charge-ordered, and polar relativistic oxide Ag2BiO3 at room temperature. Remarkably, a centrosymmetric BiO6 octahedral-breathing distortion induces a sizable spontaneous ferroelectric polarization through Bi3+/Bi5+ charge disproportionation, which stabilizes simultaneously the insulating phase. The continuous attenuation of the Bi3+/Bi5+ disproportionation obtained by applying an external electric field reduces the band gap and RD spin splitting and drives the phase transition from a ferroelectric RD insulator to a paraelectric Dirac semimetal, through a topological Weyl semimetal intermediate state. These findings suggest that Ag2BiO3 is a promising material for spin-orbitonic applications.

Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds (A=Li, Na, K)

We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

Stable charged antiparallel domain walls in hyperferroelectrics

Charge-neutral 180° domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180° domain walls running perpendicular to the polarization directions are highly energetically unfavorable because of the depolarization field and are difficult to stabilize. We explore both neutral and charged 180° domain walls in hyperferroelectrics, a class of proper ferroelectrics with persistent polarization in the presence of a depolarization field, using density functional theory. We obtain zero temperature equilibrium structures of head-to-head and tail-to-tail walls in recently discovered ABC-type hexagonal hyperferroelectrics. Charged domain walls can also be stabilized in canonical ferroelectrics represented by LiNbO₃ without any dopants, defects or mechanical clamping. First-principles electronic structure calculations show that charged domain walls can reduce and even close the band gap of host materials and support quasi-two-dimensional electron(hole) gas with enhanced electrical conductivity.