Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures

Grain orientation and shape evolution of ferroelectric ceramic thick films simulated by phase-field method

The orientation and shape of ceramics grains was always neglected, resulting in a lot of information during sintering has not been excavated. In this study, a modified phase-field model in order to express the anisotropy of grain boundary energy is developed. The effects of the anisotropy of grain boundary energy on the grain orientation and shape evolution are investigated in detail. The ferroelectric ceramic thick films are prepared by tape casting. The comparison of experiment and simulation results shows that the anisotropy of grain boundary energy results in uneven grain orientation and bimodal grain size distribution. The quantitative analysis of grain microstructures helps to establish a relationship with the degree of anisotropy of grain boundary energy. Our findings provide a new way to judge the degree of anisotropy by calculating the relevant parameters in the SEM images of ceramics materials.

Atomistic Insights into Nucleation of Ferroelastic Domains in PbTiO3

Understanding the nucleation mechanism of domains is essential for domain engineering of perovskite ferroelectric materials. We proposed and examined atomistic details for nucleating ferroelastic (FS) domains by integrating topological analysis and first-principles calculations. FS domains are crystallographically treated as deformation twins. The conventional shear-shuffle nucleation mechanism under simple shear deformation is ruled out because the 1-layer elementary twinning disconnection (TD) cannot nucleate and glide in a perfect matrix. Thus, the pure-shuffle nucleation mechanism under pure shear deformation is proposed due to kinetically favored atomic shuffling. The coherency stress associated with the coherent nucleus is relaxed via forming misfit dislocations, accompanied by formation and sharpening of diffused (110)m∥(110)d domain walls (DWs). The sharp DWs enable growth of the FS nucleus through successive nucleation and gliding of TDs. These findings enrich the knowledge of domain behavior in perovskite ferroelectric materials.

Size-Dependent Electrochemical Performance Mediated by Stress-Induced Cracking in Zn2SnO4 Electrodes

Correlating the microscopic structural characteristics with the macroscopic electrochemical performance in electrode materials is critical for developing excellent-performance lithium-ion batteries, which however remains largely unexplored. Here, we show that the Zn2SnO4 (ZTO) nanowires (NWs) with smaller diameters (d < 5 nm) exhibit slower capacity fade rate and better cycling stability, as compared with the NWs with larger diameters ranging from tens to hundreds of nanometers. By applying in situ transmission electron microscopy (TEM), we discover a strong correlation of cracking behavior with the NW diameter. Upon the first lithiation, there exists a critical diameter of ∼80 nm, below which the NWs neither crack nor fracture, and above which the cracks could easily nucleate and propagate along the specific planes, resulting in the deteriorated cycling stability in larger sized electrodes. Further theoretical calculations based on the finite element model and the climbing image nudged elastic band method faithfully predict the size-dependent cracking behaviors, which may result from the synergistic effect of axial stress evolution as well as preferential Li-ion migration directions during the first lithiation. This work provides a real-time tracking of the tempo-spatial structural evolution of a single ZTO NW, which facilitates a fundamental understanding of how the sample size affects the electrochemical behavior and thus offers a reference for future battery design and application strategy.

Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress

Domain walls (DWs) in ferroelectric materials are interfaces that separate domains with different polarizations. Charged domain walls (CDWs) and neutral domain walls are commonly classified depending on the charge state at the DWs. CDWs are particularly attractive as they are configurable elements, which can enhance field susceptibility and enable functionalities such as conductance control. However, it is difficult to achieve CDWs in practice. Here, we demonstrate that applying mechanical stress is a robust and reproducible approach to generate CDWs. By mechanical compression, CDWs with a head/tail-to-body configuration were introduced in ultrathin BaTiO₃, which was revealed by in-situ transmission electron microscopy. Finite element analysis shows strong strain fluctuation in ultrathin BaTiO₃ under compressive mechanical stress. Molecular dynamics simulations suggest that the strain fluctuation is a critical factor in forming CDWs. This study provides insight into ferroelectric DWs and opens a pathway to creating CDWs in ferroelectric materials.

Low-Pb High-Piezoelectric Ceramic System (1−x)Ba(Zr0.18Ti0.82)O3–x(Ba0.78Pb0.22)TiO3

Piezoelectric materials, especially Pb-based piezoelectric materials, are widely used in the key components of sensors, actuators, and transducers. Due to the rising concern of the toxicity of Pb, global legislation has been adopted to restrict the use of Pb. Given that the available Pb-free piezoelectric materials cannot replace the Pb-based ones for various reasons, we designed and fabricated a low-Pb piezoelectric solid-solution ceramic system, (1–x)Ba(Zr_0.18Ti_0.82)O₃–x(Ba_0.78Pb_0.22)TiO₃ (denoted as BZ_0.18T–xBP_0.22T herein). The crystal structure, ferroelectric, dielectric, and piezoelectric properties of the BZ_0.18T–xBP_0.22T system were systematically studied. With the increase in BP_0.22T content, the structure of the samples changed from a rhombohedral phase to a tetragonal phase; the intermediate composition x = 0.5 was located at the morphotropic phase boundary of the system and corresponded to the state with the coexistence of the rhombohedral and tetragonal phases. Moreover, x = 0.5 exhibited the optimum comprehensive properties among all the samples, with a piezoelectric coefficient d₃₃ of 240 pC/N, a maximum dielectric temperature Tm of 121.1°C, and a maximum polarization Pm of 15 μC/cm². Our work verifies the validity of the route to design low-Pb high-piezoelectric materials and may stimulate the interests for exploring new low-Pb high-performance ferroelectric and piezoelectric materials.

The role of lattice dynamics in ferroelectric switching

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10's of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

Recent Developments on Relaxor-PbTiO3 Ferroelectric Crystals

Numerous investigations on the development of the relaxor-PbTiO3 ferroelectric crystals have been carried out since their extraordinary properties were revealed. Recent developments on these crystals have offered further advances in electromechanical applications. In this review, recent developments on relaxor-PbTiO3 crystals and their practical applications are reviewed. The single crystal growth methods are first discussed. Two different strategies, poling and doping, for piezoelectric improvement are surveyed in the following section. After this, the anisotropic features of the single crystals are discussed. Application perspectives arising from the property improvements for electromechanical devices are finally reviewed.

In Situ Cryogenic HAADF-STEM Observation of Spontaneous Transition of Ferroelectric Polarization Domain Structures at Low Temperatures

Precise determination of atomic structures in ferroelectric thin films and their evolution with temperature is crucial for fundamental study and design of functional materials. However, this has been impeded by the lack of techniques applicable to a thin-film geometry. Here we use cryogenic scanning transmission electron microscopy (STEM) to observe the atomic structure of a BaTiO₃ film on a (111)-SrTiO₃ substrate under varying temperatures. Our study explicitly proves a structure transition from a complex polymorphic nanodomain configuration at room temperature transitioning to a homogeneous ground-state rhombohedral structure of BaTiO₃ below ∼250 K, which was predicted by phase-field simulation. More importantly, another unexpected transition is revealed, a transition to complex nanodomains below ∼105 K caused by an altered mechanical boundary condition due to the antiferrodistortive phase transition of the SrTiO₃ substrate. This study demonstrates the power of cryogenic STEM in elucidating structure-property relationships in numerous functional materials at low temperatures.

Reporting Excellent Transverse Piezoelectric and Electro-Optic Effects in Transparent Rhombohedral PMN-PT Single Crystal by Engineered Domains

Transparent ferroelectric crystals with high piezoelectricity are challenging to build because of their complex structure and disordered domains in rhombohedral relaxor ferroelectrics. There are eight domains along the <111> direction, which cause light scattering. In this study, perfect transparency is achieved along the [110] and [001] directions in [110]-poled rhombohedral 0.72Pb(Mg_1/3 Nb_2/3 )O₃ -0.28PbTiO₃ (PMN-PT) crystals, which have a high d₃₁ value of 1700 pC N^-1 and a high electro-optic coefficient γ₃₃ of 320 pm V^-1 . This implies that the [110]-oriented rhombohedral PMN-0.28PT crystal can realize the mode of transverse modulation, whereas the [001]-oriented PMN-0.28PT crystal is more suitable for the longitudinal mode. Through piezoresponse force microscopy (PFM), it is confirmed that the [110]-poled rhombohedral PMN-PT crystals form 71° layered domains, which are similar to the 109° layered domains of the [001]-oriented transparent crystal. Combined with PFM and birefringence microscopy, the degradation of domains and thickness dependence of piezoelectricity provide clear evidence for the relationship between the engineered domain structures and piezoelectric properties, which should be considered in the design of piezoelectric or electro-optic devices with excellent performance. This work enriches the research on ferroelectric domain engineering for excellent transparency and high piezoelectricity to provide new ideas for photoacoustic devices.

Manipulating ferroelectric behaviors via electron-beam induced crystalline defects

Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. The pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.

Direct observation of nanoscale dynamics of ferroelectric degradation

Failure of polarization reversal, i.e., ferroelectric degradation, induced by cyclic electric loadings in ferroelectric materials, has been a long-standing challenge that negatively impacts the application of ferroelectrics in devices where reliability is critical. It is generally believed that space charges or injected charges dominate the ferroelectric degradation. However, the physics behind the phenomenon remains unclear. Here, using in-situ biasing transmission electron microscopy, we discover change of charge distribution in thin ferroelectrics during cyclic electric loadings. Charge accumulation at domain walls is the main reason of the formation of c domains, which are less responsive to the applied electric field. The rapid growth of the frozen c domains leads to the ferroelectric degradation. This finding gives insights into the nature of ferroelectric degradation in nanodevices, and reveals the role of the injected charges in polarization reversal.

The mechanism for the enhanced piezoelectricity in multi-elements doped (K,Na)NbO3 ceramics

(K,Na)NbO3 based ceramics are considered to be one of the most promising lead-free ferroelectrics replacing Pb(Zr,Ti)O3. Despite extensive studies over the last two decades, the mechanism for the enhanced piezoelectricity in multi-elements doped (K,Na)NbO3 ceramics has not been fully understood. Here, we combine temperature-dependent synchrotron x-ray diffraction and property measurements, atomic-scale scanning transmission electron microscopy, and first-principle and phase-field calculations to establish the dopant-structure-property relationship for multi-elements doped (K,Na)NbO3 ceramics. Our results indicate that the dopants induced tetragonal phase and the accompanying high-density nanoscale heterostructures with low-angle polar vectors are responsible for the high dielectric and piezoelectric properties. This work explains the mechanism of the high piezoelectricity recently achieved in (K,Na)NbO3 ceramics and provides guidance for the design of high-performance ferroelectric ceramics, which is expected to benefit numerous functional materials.

In situ determination of the interplay of the structure and domain under a subcoercive field in BiScO3–PbTiO3

The existence of bridging domains in the vicinity of morphotropic phase boundaries brings an insight into the interplay of phase and domain and explains the excellent piezoelectric performance.

Giant tuning of ferroelectricity in single crystals by thickness engineering

Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering.

Polarization Spinodal at Ferroelectric Morphotropic Phase Boundary

Here, we report a new phenomenon of uniform and continuous transformation of a single polarization domain into alternating nanodomains of two polarization vectors with the same magnitude but different directions at ferroelectric morphotropic phase Boundary (MPB). The transformation is fully reversible and could enhance the piezoelectric coefficient d_{33}. Further free energy calculations illustrate that such a polarization "decomposition" process occurs within the region on the Landau free energy curve with respect to the polarization direction where the second derivative becomes negative, which is similar to spinodal instability in phase transformations such as spinodal ordering or isostructural phase separation (e.g., spinodal decomposition). This "polarization spinodal" uncovers a new mechanism of polarization switching that may account for the ultrahigh ahysterestic piezoelectric strain at the MPB. This work could shed light on the development of phase transition theory and the design of novel ferroelectric memory materials.

Atomic imaging of mechanically induced topological transition of ferroelectric vortices

Ferroelectric vortices formed through complex lattice–charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO₃/SrTiO₃ superlattice via atomically resolved in-situ scanning transmission electron microscopy. The vortices undergo a transition to the a-domain with in-plane polarization under external compressive stress and spontaneously recover after removal of the stress. We reveal the detailed transition process at the atomic scale and reproduce this numerically using phase-field simulations. These findings provide new pathways to control the exotic topological ferroelectric structures for future nanoelectronics and also valuable insights into understanding of lattice-charge interactions at nanoscale.

Controlling topological polar vortices promises to open up new applications for ferroelectric materials. Here, the authors proposed a method to mechanically manipulate polar vortices and monitored the transition between vortex and ferroelectric phase by in-situ scanning transmission electron microscopy.

Real-time studies of ferroelectric domain switching: a review

Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.