Lattice-Rotation Vortex at the Charged Monoclinic Domain Boundary in a Relaxor Ferroelectric Crystal

Non-volatile electric-field control of inversion symmetry

Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO₃ layers confined between layers of dielectric TbScO₃ as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO₃ phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO₃ layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.

Very-High Dynamic Range, 10,000 Frames/Second Pixel Array Detector for Electron Microscopy

Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the mapping of electric, magnetic, and strain fields depend on the dose. Reasonable acquisition time requires high beam current and the ability to quantitatively detect both large and minute changes in signal. A new hybrid pixel array detector (PAD), the second-generation Electron Microscope Pixel Array Detector (EMPAD-G2), addresses this challenge by advancing the technology of a previous generation PAD, the EMPAD. The EMPAD-G2 images continuously at a frame-rates up to 10 kHz with a dynamic range that spans from low-noise detection of single electrons to electron beam currents exceeding 180 pA per pixel, even at electron energies of 300 keV. The EMPAD-G2 enables rapid collection of high-quality STEM data that simultaneously contain full diffraction information from unsaturated bright-field disks to usable Kikuchi bands and higher-order Laue zones. Test results from 80 to 300 keV are presented, as are first experimental results demonstrating ptychographic reconstructions, strain and polarization maps. We introduce a new information metric, the maximum usable imaging speed (MUIS), to identify when a detector becomes electron-starved, saturated or its pixel count is mismatched with the beam current.

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO₃. By confining thin layers of BiFeO₃ in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

Trirelaxor Ferroelectric Material with Giant Dielectric Permittivity over a Wide Temperature Range

Advanced ferroelectrics with a combination of large dielectric response and good temperature stability are crucial for many technologically important electronic devices and electrical storage/power equipment. However, the two key factors usually do not go hand in hand, and achieving high permittivity is normally at the expense of sacrificing temperature stability. This trade-off relation is eased but not fundamentally remedied using relaxor-type materials which are known to have a diffuse permittivity peak at their relaxor transition temperatures. Here, we report an anomalous trirelaxor phenomenon in a barium titanate system and show that it can lead to a giant dielectric permittivity (ε_r ≈ 18 000) over a wide temperature range (T_span ≈ 34K), which successfully overcomes a long-standing permittivity-stability trade-off. Moreover, the enhancement in the dielectric properties also yields a desired temperature-insensitive electrocaloric performance for the trirelaxor ferroelectrics. Microstructure characterization and phase-field simulations reveal a mixture of tetragonal, orthorhombic, and rhombohedral polar nanoregions over a broad temperature window in trirelaxor ferroelectrics, which is responsible for this combination of giant dielectric permittivity and good temperature stability. This finding provides an effective approach in designing advanced ferroelectrics with high performance and thermal stability.

Cepstral scanning transmission electron microscopy imaging of severe lattice distortions

The development of four-dimensional (4D) scanning transmission electron microscopy (STEM) using fast detectors has opened-up new avenues for addressing some of longstanding challenges in electron imaging. One of these challenges is how to image severely distorted crystal lattices, such as at a dislocation core. Here we develop a new 4D-STEM technique, called Cepstral STEM, for imaging disordered crystals using electron diffuse scattering. In contrast to analysis based on Bragg diffraction, which measures the average and periodic scattering potential, electron diffuse scattering can detect fluctuations caused by crystal disorder. Local fluctuations of diffuse scattering are captured by scanning electron nanodiffraction (SEND) using a coherent probe. The harmonic signals in electron diffuse scattering are detected through Cepstral analysis and used for imaging. By integrating Cepstral analysis with 4D-STEM, we demonstrate that information about the distortive part of electron scattering potential can be separated and imaged at nm spatial resolution. We apply the technique to the analysis of a dislocation core in SiGe and lattice distortions in a high entropy alloy.

A symmetry-derived mechanism for atomic resolution imaging

We introduce an image-contrast mechanism for scanning transmission electron microscopy (STEM) that derives from the local symmetry within the specimen. For a given position of the electron probe on the specimen, the image intensity is determined by the degree of similarity between the exit electron-intensity distribution and a chosen symmetry operation applied to that distribution. The contrast mechanism detects both light and heavy atomic columns and is robust with respect to specimen thickness, electron-probe energy, and defocus. Atomic columns appear as sharp peaks that can be significantly narrower than for STEM images using conventional disk and annular detectors. This fundamentally different contrast mechanism complements conventional imaging modes and can be acquired simultaneously with them, expanding the power of STEM for materials characterization.

Scanning transmission electron diffraction methods

Scanning diffraction experiments are approaches that take advantage of many of the recent advances in technology (e.g. computer control, detectors, data storage and analysis) for the transmission electron microscope, allowing the crystal structure of materials to be studied with extremely high precision at local positions across large areas of sample. The ability to map the changing crystal structure makes such experiments a powerful tool for the study of microstructure in all its forms from grains and orientations, to secondary phases and interfaces, strain and defects. This review will introduce some of the fundamental concepts behind the breadth of the technique and showcase some of the recent developments in experiment development and applications to materials.

Nanoscale symmetry fluctuations in ferroelectric barium titanate, BaTiO3

Crystal charge density is a ground-state electronic property. In ferroelectrics, charge is strongly influenced by lattice and vice versa, leading to a range of interesting temperature-dependent physical properties. However, experimental determination of charge in ferroelectrics is challenging because of the formation of ferroelectric domains. Demonstrated here is the scanning convergent-beam electron diffraction (SCBED) technique that can be simultaneously used for imaging ferroelectric domains and identifying crystal symmetry and its fluctuations. Results from SCBED confirm the acentric tetragonal, orthorhombic and rhombohedral symmetry for the ferroelectric phases of BaTiO₃. However, the symmetry is not homogeneous; regions of a few tens of nanometres retaining almost perfect symmetry are interspersed in regions of lower symmetry. While the observed highest symmetry is consistent with the displacive model of ferroelectric phase transitions in BaTiO₃, the observed nanoscale symmetry fluctuations are consistent with the predictions of the order-disorder phase-transition mechanism.