Quantum Anomalous Hall State in Ferromagnetic SrRuO_{3} (111) Bilayers

Ru-Doping-Induced Spin Frustration and Enhancement of the Room-Temperature Anomalous Hall Effect in La2/3 Sr1/3 MnO3 Films

In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, Ru-doping-enhanced AHE in La_2/3 Sr_1/3 Mn_1-x Ru_x O₃ epitaxial films is exploited. As the B-site Ru doping level increases up to 20%, the anomalous Hall resistivity at room temperature can be enhanced from nΩ cm to µΩ cm scale. Ru doping leads to strong competition between the ferromagnetic double-exchange interaction and the antiferromagnetic superexchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. The findings can pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.

Local Kondo scattering in 4d-electron RuOx nanoclusters on atomically-resolved ultrathin SrRuO3 films

Perovskite SrRuO₃ is a unique 4d transition metal oxide with coexisting spin-orbit coupling (SOC) and electron-electron correlation. However, the intrinsic, non-reconstructed surface structure of SrRuO₃ has not been reported so far. Here we report an atomic imaging of the non-reconstructed, SrO-terminated SrRuO₃ surface by scanning tunneling microscopy/spectroscopy. Moreover, a Kondo resonant behavior is revealed in RuO_x clusters located on top of the nonmagnetic SrO surface layer. The density functional theory calculations confirm that RuO_x clusters possess localized 4d-electron-involved spin moments and hybridize with the conduction electrons in the metal host, resulting in the appearance of the Kondo resonance features around the Fermi level. Our work demonstrates that artificially-engineered transition metal oxides provide new opportunities to explore the Kondo physics in 4d multi-orbital systems.

Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO3 (111) Thin Film

The magnetic Weyl fermion originates from the time reversal symmetry (TRS)-breaking in magnetic crystalline structures, where the topology and magnetism entangle with each other. Therefore, the magnetic Weyl fermion is expected to be effectively tuned by the magnetic field and electrical field, which holds promise for future topologically protected electronics. However, the electrical field control of the magnetic Weyl fermion has rarely been reported, which is prevented by the limited number of identified magnetic Weyl solids. Here, the electric field control of the magnetic Weyl fermion is demonstrated in an epitaxial SrRuO₃ (111) thin film. The magnetic Weyl fermion in the SrRuO₃ films is indicated by the chiral anomaly induced magnetotransport, and is verified by the observed Weyl nodes in the electronic structures characterized by the angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Through the ionic-liquid gating experiment, the effective manipulation of the Weyl fermion by electric field is demonstrated, in terms of the sign-change of the ordinary Hall effect, the nonmonotonic tuning of the anomalous Hall effect, and the observation of the linear magnetoresistance under proper gating voltages. The work may stimulate the searching and tuning of Weyl fermions in other magnetic materials, which are promising in energy-efficient electronics.

Topological Phase and Quantum Anomalous Hall Effect in Ferromagnetic Transition-Metal Dichalcogenides Monolayer 1T-VSe2

Magnetic two-dimensional (2D) van der Waals materials have attracted tremendous attention because of their high potential in spintronics. In particular, the quantum anomalous Hall (QAH) effect in magnetic 2D layers shows a very promising prospect for hosting Majorana zero modes at the topologically protected edge states in proximity to superconductors. However, the QAH effect has not yet been experimentally realized in monolayer systems to date. In this work, we study the electronic structures and topological properties of the 2D ferromagnetic transition-metal dichalcogenides (TMD) monolayer 1T−VSe2 by first-principles calculations with the Heyd–Scuseria–Ernzerhof (HSE) functional. We find that the spin-orbit coupling (SOC) opens a continuous band gap at the magnetic Weyl-like crossing point hosting the quantum anomalous Hall effect with Chern number C=2. Moreover, we demonstrate the topologically protected edge states and intrinsic (spin) Hall conductivity in this magnetic 2D TMD system. Our results indicate that 1T−VSe2 monolayer serves as a stoichiometric quantum anomalous Hall material.

P-orbital magnetic topological states on square lattice

Honeycomb or triangular lattices were extensively studied and thought to be proper platforms for realizing the quantum anomalous Hall effect (QAHE), where magnetism is usually caused by d orbitals of transition metals. Here we propose that a square lattice can host three magnetic topological states, including the fully spin-polarized nodal loop semimetal, QAHE and the topologically trivial ferromagnetic semiconductor, in terms of the symmetry and k · p model analyses that are material independent. A phase diagram is presented. We further show that the above three magnetic topological states can indeed be implemented in the two-dimensional (2D) materials ScLiCl₅, LiScZ₅ (Z=Cl, Br) and ScLiBr₅, respectively. The ferromagnetism in these 2D materials is microscopically revealed from p electrons of halogen atoms. This present study opens a door to explore the exotic topological states as well as quantum magnetism from p-orbital electrons by means of the material-independent approach.

Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO₃ thin films using Sr₃Al₂O₆ water-sacrificial layer. The epitaxial Sr₃Al₂O₆(011) and Sr₃Al₂O₆(111) layers were realized on SrTiO₃(011) and SrTiO₃(111), respectively. Subsequently, SrRuO₃ films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO₃(011)_pc and SrRuO₃(111)_pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors-A Perspective Review

Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane's seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)₂ Te₃ thin films, ii) four band tight-binding model for graphene with magnetic adatoms, and iii) two (three) band spinful tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover 2D Dirac materials hosting spinless, spinful, and spin-degenerate Dirac points where various mass terms open bandgap and lead to quantum anomalous Hall effect. With emphasis on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, various symmetry constraints on the nature of mass term and the materialization of these models are discussed. This study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials.

Correlation between structural phase transition and surface chemical properties of thin film SrRuO3/SrTiO3 (001)

The correlation between the structural phase transition (SPT) and oxygen vacancy in SrRuO₃ (SRO) thin films was investigated by in situ X-ray diffraction (XRD) and ambient pressure X-ray photoelectron spectroscopy (AP-XPS). In situ XRD shows that the SPT occurs from a monoclinic SRO phase to a tetragonal SRO phase near ∼200 °C, regardless of the pressure environment. On the other hand, significant core level shifts in both the Ru and Sr photoemission spectra are found under ultrahigh vacuum, but not under the oxygen pressure environment. The directions and behavior of the core level shift of Ru and Sr are attributed to the formation of oxygen vacancy across the SPT temperature of SRO. The analysis of in situ XRD and AP-XPS results provides an evidence for the formation of metastable surface oxide possibly due to the migration of internal oxygen atoms across the SPT temperature, indicating the close relationship between oxygen vacancy and SPT in SRO thin films.

Electronic Structure of a Graphene-like Artificial Crystal of NdNiO3

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes with typical information depths of a few angstroms. Here, we use a combination of bulk-sensitive soft X-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard X-ray photoelectron spectroscopy (HAXPES), and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO₃ confined between two 4-unit cell-thick layers of insulating LaAlO₃. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.

Chern insulator with a nearly flat band in the metal-organic-framework-based Kagome lattice

Based on first-principles density-functional theory (DFT) calculations, we report that the transition-metal bis-dithiolene, M3C12S12 (M = Mn and Fe), complexes can be a two-dimensional (2D) ferromagnetic insulator with nontrivial Chern number. Among various synthetic pathways leading to metal bis-dithiolenes, the simplest choice of ligand, Benzene-hexathiol, connecting metal cations to form a Kagome lattice is studied following the experimental report of time-reversal symmetric isostructural compound Ni3C12S12. We show sulfur and carbon-based ligands play the key role in making the complexes topologically nontrivial. An unusual topological quantum phase transition induced by the on-site Coulomb interaction brings a nearly flat band with a nonzero Chern number as the highest occupied band. With this analysis we explain the electronic structure of the class M3C12S12 and predict the existence of nearly flat band with nonzero Chern number and it can be a fractional Chern insulator candidate with carrier doping.

Topological phase transition induced by px,y and pz band inversion in a honeycomb lattice

The search for more types of band inversion-induced topological states is of great scientific and experimental interest. Here, we proposed that the band inversion between p_x,y and p_z orbitals can produce a topological phase transition in honeycomb lattices based on tight-binding model analyses. The corresponding topological phase diagram was mapped out in the parameter space of orbital energy and spin-orbit coupling. Specifically, the quantum anomalous Hall (QAH) effect could be achieved when ferromagnetism was introduced. Moreover, our first-principles calculations demonstrated that the two systems of half-iodinated silicene (Si₂I) and one-third monolayer of bismuth epitaxially grown on the Si(111)-√3 ×√3 surface are ideal candidates for realizing the QAH effect with Curie temperatures of ∼101 K and 118 K, respectively. The underlying physical mechanism of this scheme is generally applicable, offering broader opportunities for the exploration of novel topological states and high-temperature QAH effect systems.

A spin-orbit playground: surfaces and interfaces of transition metal oxides

Within the last twenty years, the status of the spin-orbit interaction has evolved from that of a simple atomic contribution to a key effect that modifies the electronic band structure of materials. It is regarded as one of the basic ingredients for spintronics, locking together charge and spin degrees of freedom and recently it is instrumental in promoting a new class of compounds, the topological insulators. In this review, we present the current status of the research on the spin-orbit coupling in transition metal oxides, discussing the case of two semiconducting compounds, [Formula: see text] and [Formula: see text], and the properties of surface and interfaces based on these. We conclude with the investigation of topological effects predicted to occur in different complex oxides.

Spin-orbit coupling induced spin polarized valley states in SrRuO3/BiIrO3 heterostructures

The electronic properties of SrRuO3/BiIrO3 superlattices are investigated by first-principles calculations with spin-orbit coupling. The results show that the strength of hybridization near the Fermi level is dependent on the distance between the closest transition metal Ru and Ir atoms. We find that both spin and valley polarizations in bilayered BiIrO3 are achieved in Bi-terminated models. Furthermore, different stacking patterns can modulate the magnitude and sign of valley polarization and switch the p- or n-type doping of bilayered BiIrO3. Meanwhile, a spin-down polarized valley polarization of 79.5 meV can be induced in bilayered SrRuO3. The different thicknesses calculated demonstrate that the valley in the SrRuO3/BiIrO3 model is limited to the bilayered structure. The tunable valley and spin polarizations in SrRuO3/BiIrO3 superlattices would enrich the diversity and boost the development of high-performance spintronic and valleytronic devices.

Protecting quantum anomalous Hall state from thermal fluctuation via the giant magnetic anisotropy of Os-based dimers

Graphene with adsorbed Os-based dimers possesses both giant magnetic anisotropy and a large topological band gap.