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Islam S, Shamim S, Ghosh A. Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109671. [PMID: 35545231 DOI: 10.1002/adma.202109671] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Revised: 05/01/2022] [Indexed: 06/15/2023]
Abstract
As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum-enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in "noise" in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low-frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided.
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Affiliation(s)
- Saurav Islam
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
| | - Saquib Shamim
- Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
- Institute for Topological Insulators, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
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Xu Z, Yang H, Song X, Chen Y, Yang H, Liu M, Huang Z, Zhang Q, Sun J, Liu L, Wang Y. Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications. NANOTECHNOLOGY 2021; 32:492001. [PMID: 34450606 DOI: 10.1088/1361-6528/ac21ed] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Accepted: 08/27/2021] [Indexed: 06/13/2023]
Abstract
Charge density wave (CDW) is an intriguing physical phenomenon especially found in two-dimensional (2D) layered systems such as transition-metal dichalcogenides (TMDs). The study of CDW is vital for understanding lattice modification, strongly correlated electronic behaviors, and other related physical properties. This paper gives a review of the recent studies on CDW emerging in 2D TMDs. First, a brief introduction and the main mechanisms of CDW are given. Second, the interplay between CDW patterns and the related unique electronic phenomena (superconductivity, spin, and Mottness) is elucidated. Then various manipulation methods such as doping, applying strain, local voltage pulse to induce the CDW change are discussed. Finally, examples of the potential application of devices based on CDW materials are given. We also discuss the current challenge and opportunities at the frontier in this research field.
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Affiliation(s)
- Ziqiang Xu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Huixia Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Meng Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Jiatao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
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Gye G, Oh E, Yeom HW. Topological Landscape of Competing Charge Density Waves in 2H-NbSe_{2}. PHYSICAL REVIEW LETTERS 2019; 122:016403. [PMID: 31012648 DOI: 10.1103/physrevlett.122.016403] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2018] [Indexed: 06/09/2023]
Abstract
Despite decades of studies of the charge density wave (CDW) of 2H-NbSe_{2}, the origin of its incommensurate CDW ground state has not been understood. We discover that the CDW of 2H-NbSe_{2} is composed of two different, energetically competing, structures. The lateral heterostructures of two CDWs are entangled as topological excitations, which give rise to a CDW phase shift and the incommensuration without a conventional domain wall. A partially melted network of topological excitations and their vertices explain an unusual landscape of domains. The unconventional topological role of competing phases disclosed here can be widely applied to various incommensuration or phase coexistence phenomena in materials.
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Affiliation(s)
- Gyeongcheol Gye
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea, and Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Eunseok Oh
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea, and Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea, and Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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Abstract
Charge density waves (CDWs) are simple periodic reorganizations of charge in a crystal, and yet they are still poorly understood and continue to bear surprises. External perturbations, such as strain or pressure, can in principle push a CDW phase into a different ordering geometry. However, engineering this type of quantum criticality has been experimentally challenging. Here, we implement a simple method for straining bulk materials. By applying it to 2H-NbSe2, a prototypical CDW system studied for decades, we discover two dramatic strain-induced CDW phase transitions. Our atomic-scale spectroscopic imaging measurements, combined with theory, reveal the distinct roles of electrons and phonons in forming these emergent states, thus opening a window into the rich phenomenology of CDWs. A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection of the particular wavevector and geometry of an emerging CDW should in principle be susceptible to controllable manipulation. In this work, we implement a simple method for straining materials compatible with low-temperature scanning tunneling microscopy/spectroscopy (STM/S), and use it to strain-engineer CDWs in 2H-NbSe2. Our STM/S measurements, combined with theory, reveal how small strain-induced changes in the electronic band structure and phonon dispersion lead to dramatic changes in the CDW ordering wavevector and geometry. Our work unveils the microscopic mechanism of a CDW formation in this system, and can serve as a general tool compatible with a range of spectroscopic techniques to engineer electronic states in any material where local strain or lattice symmetry breaking plays a role.
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Liu G, Rumyantsev S, Bloodgood MA, Salguero TT, Balandin AA. Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials. NANO LETTERS 2018; 18:3630-3636. [PMID: 29767986 DOI: 10.1021/acs.nanolett.8b00729] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We investigated low-frequency noise in two-dimensional (2D) charge density wave (CDW) systems, 1 T-TaS2 thin films, as they were driven from the nearly commensurate (NC) to incommensurate (IC) CDW phases by voltage and temperature stimuli. This study revealed that noise in 1 T-TaS2 has two pronounced maxima at the bias voltages, which correspond to the onset of CDW sliding and the NC-to-IC phase transition. We observed unusual Lorentzian features and exceptionally strong noise dependence on electric bias and temperature, leading to the conclusion that electronic noise in 2D CDW systems has a unique physical origin different from known fundamental noise types. We argue that noise spectroscopy can serve as a useful tool for understanding electronic transport phenomena in 2D CDW materials characterized by coexistence of different phases and strong pinning.
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Affiliation(s)
- Guanxiong Liu
- Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, Materials Science and Engineering Program , University of California , Riverside , California 92521 , United States
| | - Sergey Rumyantsev
- Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, Materials Science and Engineering Program , University of California , Riverside , California 92521 , United States
- Ioffe Physical-Technical Institute , St. Petersburg 194021 , Russia
| | - Matthew A Bloodgood
- Department of Chemistry , University of Georgia , Athens , Georgia 30602 , United States
| | - Tina T Salguero
- Department of Chemistry , University of Georgia , Athens , Georgia 30602 , United States
| | - Alexander A Balandin
- Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, Materials Science and Engineering Program , University of California , Riverside , California 92521 , United States
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