Electronic Noise Spectroscopy of Quasi-Two-Dimensional Antiferromagnetic Semiconductors

We investigated low-frequency current fluctuations, i.e., electronic noise, in FePS3 van der Waals layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectroscopy for advanced materials characterization of the charge carrier dynamics affected by spin ordering and trapping states. Owing to the high resistivity of the material, we conducted measurements on vertical device configuration. The measured noise spectra reveal pronounced Lorentzian peaks of two different origins. One peak is observed only near the Néel temperature, and it is attributed to the corresponding magnetic phase transition. The second Lorentzian peak, visible in the entire measured temperature range, has characteristics of the trap-assisted generation-recombination processes similar to those in conventional semiconductors but shows a clear effect of the spin order reconfiguration near the Néel temperature. The obtained results contribute to understanding the electron and spin dynamics in this type of antiferromagnetic semiconductors and demonstrate the potential of electronic noise spectroscopy for advanced materials characterization.

Cryogenic characteristics of graphene composites-evolution from thermal conductors to thermal insulators

The development of cryogenic semiconductor electronics and superconducting quantum computing requires composite materials that can provide both thermal conduction and thermal insulation. We demonstrated that at cryogenic temperatures, the thermal conductivity of graphene composites can be both higher and lower than that of the reference pristine epoxy, depending on the graphene filler loading and temperature. There exists a well-defined cross-over temperature-above it, the thermal conductivity of composites increases with the addition of graphene; below it, the thermal conductivity decreases with the addition of graphene. The counter-intuitive trend was explained by the specificity of heat conduction at low temperatures: graphene fillers can serve as, both, the scattering centers for phonons in the matrix material and as the conduits of heat. We offer a physical model that explains the experimental trends by the increasing effect of the thermal boundary resistance at cryogenic temperatures and the anomalous thermal percolation threshold, which becomes temperature dependent. The obtained results suggest the possibility of using graphene composites for, both, removing the heat and thermally insulating components at cryogenic temperatures-a capability important for quantum computing and cryogenically cooled conventional electronics.

Quantum Composites with Charge-Density-Wave Fillers

A unique class of advanced materials-quantum composites based on polymers with fillers composed of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases-is demonstrated. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to collapse of the quantum states. The macroscopic charge-density-wave phases of filler particles after multiple composite processing steps are successfully preserved in this work. The prepared composites display strong charge-density-wave phenomena even above room temperature. The dielectric constant experiences more than two orders of magnitude enhancement while the material maintains its electrically insulating properties, opening a venue for advanced applications in energy storage and electronics. The results present a conceptually different approach for engineering the properties of materials, extending the application domain for van der Waals materials.

[Comparative characterization of the linear dimensions of the pubic symphysis in women in the first period of adulthood, elderly age and old age according to computed tomography data.]

The paper is based on the results of a CT study of 71 women with normal pelvic dimensions without pelvic bone or pelvic organ pathology who underwent the study in 2022-2023. All subjects consented to the study, which was performed according to the indications. The CT study consisted of determining the width, height, and thickness of the pubic symphysis in 3D reconstruction mode. The subjects were divided into three groups according to the anatomical age classification. The first group consisted of 23 first-age adults (21-35 years old); the second group included 25 elderly people (56-74 years old); the third group consisted of 23 elderly people (75-88 years old). The results obtained are the basis for further research and can be used by doctors of such clinical specialties as sports medicine, traumatology, forensics, forensic medicine, obstetrics and many others.

[Morphologial changes in the hair follicle and hair shaft in old age.]

The work is based on the results of a microscopic examination of 46 men and 50 women who were examined at the medical center for the treatment of hair and skin in the period 2022-2023. Depending on the age of the subjects, they were divided into two groups. The first group included 52 people (25 men and 27 women) of young age (21-35 years old). The second group consisted of 44 people (21 men and 23 women) of senile age (75-86 years old). Hair sampling was performed in the temporal region of the head by combing out the hair that had already fallen out with a comb (they did not pull it out of the skin!). The sample of this study consisted of conditionally healthy individuals of the Slavic phenotype. The width of the hair follicle and the hair shaft were calculated. The results of this lifetime comparative analysis of the linear dimensions of the hair follicle and the hair shaft in the temporal region in persons of both sexes of young and old age allow us to expand the understanding of the features of their age-related changes, and further continue detailed study, since new knowledge is necessary for the development of modern methods for the prevention of age-associated pathologies of the scalp.

Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h-BN/1T-TaS2 Devices

We report on the electrical gating of the charge-density-wave phases and current in h-BN-capped three-terminal 1T-TaS₂ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density-wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS₂ at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

We report the results of the investigation of bulk and surface acoustic phonons in the undoped and boron-doped single-crystal diamond films using the Brillouin-Mandelstam light scattering spectroscopy. The evolution of the optical phonons in the same set of samples was monitored with Raman spectroscopy. It was found that the frequency and the group velocity of acoustic phonons decrease nonmonotonically with the increasing boron doping concentration, revealing pronounced phonon softening. The change in the velocity of the shear-horizontal and the high-frequency pseudo-longitudinal acoustic phonons in the degenerately doped diamond, as compared to that in the undoped diamond, was as large as ∼15% and ∼12%, respectively. As a result of boron doping, the velocity of the bulk longitudinal and transverse acoustic phonons decreased correspondingly. The frequency of the optical phonons was unaffected at low boron concentration but experienced a strong decrease at the high doping level. The density-functional-theory calculations of the phonon band structure for the pristine and highly doped samples confirm the phonon softening as a result of boron doping in diamond. The obtained results have important implications for thermal transport in heavily doped diamond, which is a promising material for ultra-wide-band-gap electronics.

Properties for Thermally Conductive Interfaces with Wide Band Gap Materials

The goal of this study is to determine how bulk vibrational properties and interfacial structure affect thermal transport at interfaces in wide band gap semiconductor systems. Time-domain thermoreflectance measurements of thermal conductance G are reported for interfaces between nitride metals and group IV (diamond, SiC, Si, and Ge) and group III-V (AlN, GaN, and cubic BN) materials. Group IV and group III-V semiconductors have systematic differences in vibrational properties. Similarly, HfN and TiN are also vibrationally distinct from each other. Therefore, comparing G of interfaces formed from these materials provides a systematic test of how vibrational similarity between two materials affects interfacial transport. For HfN interfaces, we observe conductances between 140 and 300 MW m^-2 K^-1, whereas conductances between 200 and 800 MW m^-2 K^-1 are observed for TiN interfaces. TiN forms exceptionally conductive interfaces with GaN, AlN, and diamond, that is, G > 400 MW m^-2 K^-1. Surprisingly, interfaces formed between vibrationally similar and dissimilar materials are similarly conductive. Thus, vibrational similarity between two materials is not a necessary requirement for high G. Instead, the time-domain thermoreflectance experiment (TDTR) data, an analysis of bulk vibrational properties, and transmission electron microscopy (TEM) suggest that G depends on two other material properties, namely, the bulk phonon properties of the vibrationally softer of the two materials and the interfacial structure. To determine how G depends on interfacial structure, TDTR and TEM measurements were conducted on a series of TiN/AlN samples prepared in different ways. Interfacial disorder at a TiN/AlN interface adds a thermal resistance equivalent to ∼1 nm of amorphous material. Our findings improve fundamental understanding of what material properties are most important for thermally conductive interfaces. They also provide benchmarks for the thermal conductance of interfaces with wide band gap semiconductors.

Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanism

The nature of the low-frequency 1/f noise in electronic materials and devices is one of the oldest unsolved physical problems (f is the frequency). The fundamental question of the noise source-fluctuations in the mobility vs. number of charge carriers-is still debated. While there are several pieces of evidence to prove that the 1/f noise in semiconductors is due to the fluctuations in the number of the charge carriers, there is no direct evidence of the mobility fluctuations as the source of 1/f noise in any material. Herein, we measured noise in an h-BN encapsulated graphene transistor under the conditions of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately μ₀B ≅ 1 (μ₀ is the electron mobility). This observation proves unambiguously that mobility fluctuations are the dominant mechanism of electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device.

Charge-Density-Wave Thin-Film Devices Printed with Chemically Exfoliated 1T-TaS2 Ink

We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin-film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS₂ crystals to produce fillers with nm-scale thickness and μm-scale lateral dimensions. Exfoliated 1T-TaS₂ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of filler particles thermophysical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS₂ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly commensurate to the commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS₂ filler particles rather than by electron-hopping transport between them. The obtained results are important for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.

Metallic vs. semiconducting properties of quasi-one-dimensional tantalum selenide van der Waals nanoribbons

We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe_3-δ nanoribbons exfoliated onto gold substrates. At a selenium deficiency of δ ∼ 0.25 (Se/Ta = 2.75), the nanoribbons exhibit a strong, broad PL peak centered around ∼920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785 nm (1.58 eV) laser excitation, allowing for their nanoscale spectroscopic imaging. Nanoribbons with a smaller selenium deficiency (Se/Ta = 2.85, δ ∼ 0.15) did not show any PL or TERS response. The confocal Raman spectra of these samples agree with the previously-reported spectra of metallic TaSe₃. The differences in the optical response of the nanoribbons examined in this study suggest that even small variations in Se content can induce changes in electronic band structure, causing samples to exhibit either metallic or semiconducting character. The temperature-dependent electrical measurements of devices fabricated with both types of materials corroborate these observations. The density-functional-theory calculations revealed that substitution of an oxygen atom in a Se vacancy can result in band gap opening and thus enable the transition from a metal to a semiconductor. However, the predicted band gap is substantially smaller than that derived from the PL data. These results indicate that the properties of van der Waals materials can vary significantly depending on stoichiometry, defect types and concentration, and possibly environmental and substrate effects. In view of this finding, local probing of nanoribbon properties with TERS becomes essential to understanding such low-dimensional systems.

Specifics of Thermal Transport in Graphene Composites: Effect of Lateral Dimensions of Graphene Fillers

We report on the investigation of thermal transport in noncured silicone composites with graphene fillers of different lateral dimensions. Graphene fillers are comprised of few-layer graphene flakes with lateral sizes in the range from 400 to 1200 nm and the number of atomic planes from 1 to ∼100. The distribution of the lateral dimensions and thicknesses of graphene fillers has been determined via atomic force microscopy statistics. It was found that in the examined range of the lateral dimensions, the thermal conductivity of the composites increases with increasing size of the graphene fillers. The observed difference in thermal properties can be related to the average gray phonon mean free path in graphene, which has been estimated to be around ∼800 nm at room temperature. The thermal contact resistance of composites with graphene fillers of 1200 nm lateral dimensions was also smaller than that of composites with graphene fillers of 400 nm lateral dimensions. The effects of the filler loading fraction and the filler size on the thermal conductivity of the composites were rationalized within the Kanari model. The obtained results are important for the optimization of graphene fillers for applications in thermal interface materials for heat removal from high-power-density electronics.

Printed Electronic Devices with Inks of TiS3 Quasi-One-Dimensional van der Waals Material

We report on the fabrication and characterization of electronic devices printed with inks of quasi-one-dimensional (1D) van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allow for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS₃ into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature-dependent electrical measurements indicate that the electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/f^γ-type with γ ∼ 1 near-room temperature (f is the frequency). The abrupt changes in the temperature dependence of the noise spectral density and γ parameter can be indicative of the phase transition in individual TiS₃ nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.

Electromagnetic-Polarization-Selective Composites with Quasi-1D Van der Waals Fillers: Nanoscale Material Functionality That Mimics Macroscopic Systems

We report on the preparation of flexible polymer composite films with aligned metallic fillers composed of atomic chain bundles of quasi-one-dimensional (1D) van der Waals material, tantalum triselenide (TaSe₃). The material functionality, embedded at the nanoscale level, is achieved by mimicking the design of an electromagnetic aperture grid antenna. The processed composites employ chemically exfoliated TaSe₃ nanowires as the grid building blocks incorporated within the thin film. Filler alignment is achieved using the "blade coating" method. Measurements conducted in the X-band frequency range demonstrate that the electromagnetic transmission through such films can be varied significantly by changing the relative orientations of the quasi-1D fillers and the polarization of the electromagnetic wave. We argue that such polarization-sensitive polymer films with unique quasi-1D metallic fillers are applicable to advanced electromagnetic interference shielding in future communication systems.

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

We review the current state-of-the-art graphene-enhanced thermal interface materials for the management of heat in the next generation of electronics. Increased integration densities, speed and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of composites, while simultaneously preserving electrical insulation. A hybrid filler approach, using graphene and boron nitride, is presented as a possible technology providing for the independent control of electrical and thermal conduction. The reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of graphene-enhanced thermal interface materials compared to alternative technologies.

[Morphological characteristics of the cerebellar cortex at a young age and changes in its cytoarchitectonics in opioid dependence]

The results of histological, micrometric and immunohistochemical studies performed on sectional material of 69 men corpses aged from 21 to 29 years are presented. Two groups were identified: 42 deaths without drug addiction and 27 deaths from exposure to a toxic synthetic opioids drug, with the history their systematic use lasting from 16 months to 3 years. A comparative analysis of the morphological characteristics of cerebellar cortex tissues was carried out using staining with hematoxylin and eosin and according to the Nissl method (according to Snesarev). For immunohistochemical analysis of the samples, a panel of antibodies to the Vimentin protein was used. In each case, the distance between Purkinje cells was determined and the percentage of immunonegative Purkinje cells to Vimentin from their total number was calculated. In persons with a history of opioid dependence, signs of neurodegenerative changes in the cerebellar cortex were noted: deformation of the shape of Purkinje cells, morphological transformation of nuclei from karyopyknosis to karyorrhexis, and the appearance of fuzzy cell boundaries. There was no statistically significant difference in the distance between the Purkinje cells and their number in the opioid-dependent group and in the conditionally healthy group. An increase in the number of Purkinje cells immunopositive to the Vimentin protein was found in the group of deaths with opioid dependence. The results of assessing the cytoarchitectonics of the cerebellar cortex using an immunohistochemical method for studying Purkinje cells positively stained with antibodies to Vimentin can be used as additional criteria for forensic medical determination of the opioid dependence presence in the deceased.

Electrically Insulating Flexible Films with Quasi-1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub-THz Frequency Bands

Polymer composite films containing fillers comprising quasi-1D van der Waals materials, specifically transition metal trichalcogenides with 1D structural motifs that enable their exfoliation into bundles of atomic threads, are reported. These nanostructures are characterized by extremely large aspect ratios of up to ≈10⁶ . The polymer composites with low loadings of quasi-1D TaSe₃ fillers (<3 vol%) reveal excellent electromagnetic interference shielding in the X-band GHz and extremely high frequency sub-THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high-aspect-ratio electrically conductive TaSe₃ atomic-thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high-frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, inexpensive, and electrically insulating.

[Effectiveness of treatment of elderly patients with traumatic brain injury complicated by subdural hematoma.]

The work is based on the results of a retrospective analysis of the medical records of 56 patients with traumatic brain injury complicated by acute subdural hematoma with a volume of 60-100 cm3. The patients were divided into 2 groups according to their age: the 1st group included 29 patients aged 22-29 years, the 2nd group consisted of 27 patients aged 61-69 years. The degree of impaired consciousness in the victims at admission to the clinic was evaluated on the Glasgow scale, the effectiveness of the treatment at discharge from the hospital was performed on the Rankin scale, assessing the degree of independence and disability. Elderly patients were found to have a more severe condition upon admission to the clinic. Upon discharge from the hospital, the assessment of the degree of independence and disability on the Rankin scale revealed a statistically significant predominance of scores in the group of elderly patients (p<0,01), which indicates less effective treatment in comparison with young patients. The results of this study can serve as a basis for the development of additional recommendations in outpatient practice for the care and care of patients in the older age group and a personalized approach to neurosurgical patients taking into account their age.

[Morphological differences of the fallopian tube ampoule in young and old age.]

The work is based on a morphological study of ampoules of the fallopian tubes of 130 young and senile women who gave birth. Macrometric, histological, immunohistochemical and micrometric methods of investigation were applied. The regularities of age-related morphological variability of the fallopian tube ampoule are revealed, which are manifested in a decrease in the parameters of their length, as well as external diameters in the middle of the ampoule and at the places of transition of the isthmus into the ampoule and ampoule into the funnel from young age to old age. Histoarchitectonics of ampoules of the fallopian tubes in women in old age is characterized by flattening of the epithelium of the mucous membrane, which forms an abundance of nearby thickened folds that form an uneven narrowing of the lumen of the ampoule. The thinning of the muscle membrane is determined with the growth of connective tissue instead of it and the accumulation of adipocytes in the subserose base. In old age, there is a more pronounced expression of vimentin, which can be traced not only in the endothelium and subendothelial layer of blood vessels, including capillaries, but also in individual fibroblasts. It was found that the features of the micrometric characteristics of the fallopian tube ampoules consist in a decrease in the inner perimeter of the epithelial lining and the lumen area, along with an increase in the area of their wall at the median cross-section in old age compared with young age.

Strain-Controlled Superconductivity in Few-Layer NbSe2

The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions, etc., can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of NbSe₂ have been shown as a superconductor with strong spin orbit coupling, which can give rise to topological superconductivity if driven by a large magnetic exchange field. Here we demonstrate the superconductor-insulator transitions in epitaxially grown few-layer NbSe₂ with wafer-scale uniformity on insulating substrates. We provide the electrical transport, Raman spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction characterizations of the insulating phase. We show that the superconductor-insulator transition is driven by strain, which also causes characteristic energy shifts of the Raman modes. Our observation paves the way for high-quality heterojunction tunnel barriers to be seamlessly built into epitaxial NbSe₂ itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics.

Phononic and photonic properties of shape-engineered silicon nanoscale pillar arrays

We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale 'pillar with the hat' periodic silicon structures, revealing intriguing phononic and photonic-phoxonic-properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic crystals, strongly affecting the light-matter interactions. Acoustic phonon states can be tuned by external boundaries, either as a result of phonon confinement effects in individual nanostructures, or as a result of artificially induced external periodicity, as in the phononic crystals. The shape of the nanoscale pillar array was engineered to ensure the interplay of both effects. The Brillouin-Mandelstam spectroscopy data indicated strong flattening of the acoustic phonon dispersion in the frequency range from 2 GHz to 20 GHz and the phonon wave vector extending to the higher-order Brillouin zones. The specifics of the phonon dispersion dependence on the pillar arrays' orientation suggest the presence of both periodic modulation and spatial localization effects for the acoustic phonons. The ellipsometry data reveal a distinct scatter pattern of four-fold symmetry due to nanoscale periodicity of the pillar arrays. Our results confirm the dual functionality of the nanostructured shape-engineered structure and indicate a possible new direction for fine-tuning the light-matter interaction in the next generation of photonic, optoelectronic, and phononic devices.

Graphene Epoxy-Based Composites as Efficient Electromagnetic Absorbers in the Extremely High-Frequency Band

We report on the synthesis of the epoxy-based composites with graphene fillers and test their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high-frequency (EHF) band (220-325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of few-micrometer lateral dimensions. It was found that the electromagnetic transmission, T, is low even at small concentrations of graphene fillers: T<1% at a frequency of 300 GHz for a composite with only ϕ = 1 wt% graphene. The main shielding mechanism in composites with the low graphene loading is absorption. The composites of 1 mm in thickness and a graphene loading of 8 wt% provide an excellent electromagnetic shielding of 70 dB in the sub-terahertz EHF frequency band with negligible energy reflection to the environment. The developed lightweight adhesive composites with graphene fillers can be used as electromagnetic absorbers in the high-frequency microwave radio relays, microwave remote sensors, millimeter wave scanners, and wireless local area networks.

Phononics of Graphene and Related Materials

In this Perspective, I present a concise account concerning the emergence of the research field investigating the phononic and thermal properties of graphene and related materials, covering the refinement of our understanding of phonon transport in two-dimensional material systems. The initial interest in graphene originated from its unique linear energy dispersion for electrons, revealed in exceptionally high electron mobility, and other exotic electronic and optical properties. Electrons are not the only elemental excitations influenced by a reduction in dimensionality. Phonons-quanta of crystal lattice vibrations-also demonstrate an extreme sensitivity to the number of atomic planes in the few-layer graphene, resulting in unusual heat conduction properties. I outline recent theoretical and experimental developments in the field and discuss how the prospects for the mainstream electronic application of graphene, enabled by its high electron mobility, gradually gave way to emerging real-life products based on few-layer graphene, which utilize its unique heat conduction rather than its electrical conduction properties.

Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductors

We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS₃ and MnPS₃ semiconductors. Raman spectroscopy was conducted using three different excitation lasers with wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). UV-Raman spectroscopy reveals spectral features which are not detectable via visible Raman light scattering. The thermal conductivity of FePS₃ and MnPS₃ thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS₃ to be 1.35 ± 0.32 W m^-1 K^-1 at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS₃ are 0.85 ± 0.15 and 2.7 ± 0.3 W m^-1 K^-1, respectively. The films of MnPS₃ have higher thermal conductivity of 1.1 ± 0.2 W m^-1 K^-1 through-plane and 6.3 ± 1.7 W m^-1 K^-1 in-plane. The data obtained by the two techniques are in agreement and reveal strong thermal anisotropy of the films and the dominance of phonon contribution to heat conduction. The obtained results are important for the interpretation of electric switching experiments with antiferromagnetic materials as well as for the proposed applications of the antiferromagnetic semiconductors in spintronic devices.

[Comparative morphological characteristics of the corpus callosum in men and women of young and old age.]

The work is based on the results of an organometric study of the corpus callosum (callosometry) among 93 people (49 men and 44 women) using the method of magnetic resonance imaging. A comparative analysing of the length, height, thickness of the roller and the knee of the corpus callosum, the depth of its occurrence (front, top, back) was carried out. The regularities of age variability of organometric characteristics of the corpus callosum, manifested in a decrease in its linear dimensions among old people in comparison with young people and a decrease in the depth of its occurrence. The results of this morphological study can be as a basis for identifying individual patterns of age-related anatomy of the brain and have practical importance as indicators of the norm, which will use these data in diagnostic and therapeutic work.

[The dynamics of the structural organization of the corpus callosum from young to old age.]

The work is based on the results of histological and immunohistochemical studies performed on the sectional material of 104 human corpses (59 men and 45 women) of young and old age. A comparative analysis of the morphological characteristics of the corpus callosum tissues using hematoxylin and eosin staining, the Nissl method (by Snesarev), by Van Gieson, by Spielmeyer, by Foot. An immunohistochemical study of the samples used a panel of antibodies to glial fibrillar acid protein (GFAP), the S-100 protein. It was found that by senile age, the tissue of the corpus callosum is characterized by the accumulation of glial macrophages. With age, there is a proliferation of GFAP-immunopositive astroglia. There is no dynamics of S-100 protein expression with age. Thus, the revealed regularity of age-related variability of the cytoarchitectonics of the corpus callosum is of interest in diagnostic and therapeutic work, and its morphological picture in old age can serve as an equivalent of the anatomical norm.

Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots

We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background (f is the frequency). An activation energy of ∼0.3 eV was extracted from the temperature dependence of the noise spectra in the ordered and random quantum dot films. The noise level in the ordered films was lower than that in the weakly-ordered and random-packed films. A large variation in the magnitude of the noise spectral density was also observed in samples with different ligand treatments. The obtained results are important for application of colloidal quantum dot films in photodetectors.

Strong Hot Carrier Effects in Single Nanowire Heterostructures

We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs_0.7Sb_0.3/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs_0.7Sb_0.3 nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.

Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition

Micron-scale single-crystal nanowires of metallic TaSe₃, a material that forms -Ta-Se₃-Ta-Se₃- stacks separated from one another by a tubular van der Waals (vdW) gap, have been synthesized using chemical vapor deposition (CVD) on a SiO₂/Si substrate, in a process compatible with semiconductor industry requirements. Their electrical resistivity was found unaffected by downscaling from the bulk to as little as 7 nm in nanowire width and height, in striking contrast to the resistivity of copper for the same dimensions. While the bulk resistivity of TaSe₃ is substantially higher than that of bulk copper, at the nanometer scale the TaSe₃ wires become competitive to similar-sized copper ones. Moreover, we find that the vdW TaSe₃ nanowires sustain current densities in excess of 10⁸ A/cm² and feature an electromigration energy barrier twice that of copper. The results highlight the promise of quasi-one-dimensional transition metal trichalcogenides for electronic interconnect applications and the potential of van der Waals materials for downscaled electronics.

Ultrastiff, Strong, and Highly Thermally Conductive Crystalline Graphitic Films with Mixed Stacking Order

A macroscopic film (2.5 cm × 2.5 cm) made by layer-by-layer assembly of 100 single-layer polycrystalline graphene films is reported. The graphene layers are transferred and stacked one by one using a wet process that leads to layer defects and interstitial contamination. Heat-treatment of the sample up to 2800 °C results in the removal of interstitial contaminants and the healing of graphene layer defects. The resulting stacked graphene sample is a freestanding film with near-perfect in-plane crystallinity but a mixed stacking order through the thickness, which separates it from all existing carbon materials. Macroscale tensile tests yields maximum values of 62 GPa for the Young's modulus and 0.70 GPa for the fracture strength, significantly higher than has been reported for any other macroscale carbon films; microscale tensile tests yield maximum values of 290 GPa for the Young's modulus and 5.8 GPa for the fracture strength. The measured in-plane thermal conductivity is exceptionally high, 2292 ± 159 W m^-1 K^-1 while in-plane electrical conductivity is 2.2 × 10⁵ S m^-1 . The high performance of these films is attributed to the combination of the high in-plane crystalline order and unique stacking configuration through the thickness.

Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices

We report on switching among three charge-density-wave phases, commensurate, nearly commensurate, incommensurate, and the high-temperature normal metallic phase in thin-film 1T-TaS₂ devices induced by application of an in-plane bias voltage. The switching among all phases has been achieved over a wide temperature range, from 77 to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 to 600 K. Analysis of the experimental data and calculations of heat dissipation indicate that Joule heating plays a dominant role in the voltage induced transitions in the 1T-TaS₂ devices on Si/SiO₂ substrates, contrary to some recent claims. The possibility of the bias-voltage switching among four different phases of 1T-TaS₂ is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in the materials.

Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

We demonstrate that charge-density-wave devices with quasi-two-dimensional 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 1014 H+cm-2. The current-voltage characteristics of these devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other two-dimensional devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" charge-density-wave devices is attributed to the quasi-2D nature of the electron transport in the nanoscale-thickness channel, high concentration of charge carriers in the utilized charge-density-wave phases, and two-dimensional device design. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.

Unique features of the generation-recombination noise in quasi-one-dimensional van der Waals nanoribbons

We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density, SI/I2, reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation-recombination noise at low temperatures (I is the current and f is the frequency). Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source-drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.

Thermal Percolation Threshold and Thermal Properties of Composites with High Loading of Graphene and Boron Nitride Fillers

We investigated thermal properties of the epoxy-based composites with the high loading fraction-up to f ≈ 45 vol %-of the randomly oriented electrically conductive graphene fillers and electrically insulating boron nitride fillers. It was found that both types of the composites revealed a distinctive thermal percolation threshold at the loading fraction f_T > 20 vol %. The graphene loading required for achieving thermal percolation, f_T, was substantially higher than the loading, f_E, for electrical percolation. Graphene fillers outperformed boron nitride fillers in the thermal conductivity enhancement. It was established that thermal transport in composites with high filler loadings, f ≥ f_T, is dominated by heat conduction via the network of percolating fillers. Unexpectedly, we determined that the thermal transport properties of the high loading composites were influenced strongly by the cross-plane thermal conductivity of the quasi-two-dimensional fillers. The obtained results shed light on the debated mechanism of the thermal percolation, and facilitate the development of the next generation of the efficient thermal interface materials for electronic applications.

High-Vacuum Particulate-Free Deposition of Wafer-Scale Mono-, Bi-, and Trilayer Molybdenum Disulfide with Superior Transport Properties

Wafer-scale MoS₂ growth at arbitrary integer layer number is demonstrated by a technique based on the decomposition of carbon disulfide on a hot molybdenum filament, which yields volatile MoS _x precursors that precipitate onto a heated wafer substrate. Colorimetric control of the growth process allows precise targeting of any integer layer number. The method is inherently free of particulate contamination, uses inexpensive reactants without the pyrophoricity common to metal-organic precursors, and does not rely on particular gas-flow profiles. Raman mapping and photoluminescence mapping, as well as imaging by electron microscopy, confirm the layer homogeneity and crystalline quality of the resultant material. Electrical characterization revealed microampere output current, outstanding device-to-device consistency, and exceptionally low noise level unparalleled even by the exfoliated material, while other transport properties are obscured by high-resistance contacts typical to MoS₂ devices.

Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials

We investigated low-frequency noise in two-dimensional (2D) charge density wave (CDW) systems, 1 T-TaS₂ thin films, as they were driven from the nearly commensurate (NC) to incommensurate (IC) CDW phases by voltage and temperature stimuli. This study revealed that noise in 1 T-TaS₂ has two pronounced maxima at the bias voltages, which correspond to the onset of CDW sliding and the NC-to-IC phase transition. We observed unusual Lorentzian features and exceptionally strong noise dependence on electric bias and temperature, leading to the conclusion that electronic noise in 2D CDW systems has a unique physical origin different from known fundamental noise types. We argue that noise spectroscopy can serve as a useful tool for understanding electronic transport phenomena in 2D CDW materials characterized by coexistence of different phases and strong pinning.

A Magnetometer Based on a Spin Wave Interferometer

We describe a magnetic field sensor based on a spin wave interferometer. Its sensing element consists of a magnetic cross junction with four micro-antennas fabricated at the edges. Two of these antennas are used for spin wave excitation while two other antennas are used for detection of the inductive voltage produced by the interfering spin waves. Two waves propagating in the orthogonal arms of the cross may accumulate significantly different phase shifts depending on the magnitude and direction of the external magnetic field. This phenomenon is utilized for magnetic field sensing. The sensitivity attains its maximum under the destructive interference condition, where a small change in the external magnetic field results in a drastic increase of the inductive voltage, as well as in the change of the output phase. We report experimental data obtained for a micrometer scale Y₃Fe₂(FeO₄)₃ cross structure. The change of the inductive voltage near the destructive interference point exceeds 40 dB per 1 Oe. The phase of the output signal exhibits a π-phase shift within 1 Oe. The data are collected at room temperature. Taking into account the low thermal noise in ferrite structures, we estimate that the maximum sensitivity of the spin wave magnetometer may exceed attotesla.

Phonons and thermal transport in graphene and graphene-based materials

A discovery of the unusual thermal properties of graphene stimulated experimental, theoretical and computational research directed at understanding phonon transport and thermal conduction in two-dimensional material systems. We provide a critical review of recent results in the graphene thermal field focusing on phonon dispersion, specific heat, thermal conductivity, and comparison of different models and computational approaches. The correlation between the phonon spectrum in graphene-based materials and the heat conduction properties is analyzed in details. The effects of the atomic plane rotations in bilayer graphene, isotope engineering, and relative contributions of different phonon dispersion branches are discussed. For readers' convenience, the summaries of main experimental and theoretical results on thermal conductivity as well as phonon mode contributions to thermal transport are provided in the form of comprehensive annotated tables.

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe₃ capped with quasi-2D h-BN layers. Semimetallic TaSe₃ is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe₃ nanowires have lower levels of the normalized noise spectral density, S_I/I², compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f² type as temperature increases to ∼400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-1D TaSe₃ nanowires is approximately E_P ≈ 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is E_A = 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.

Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires

Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. However, despite strong scientific and practical importance, conclusive experimental evidence of confined acoustic phonon polarization branches in individual free-standing nanostructures is lacking. Here we report results of Brillouin—Mandelstam light scattering spectroscopy, which reveal multiple (up to ten) confined acoustic phonon polarization branches in GaAs nanowires with a diameter as large as 128 nm, at a length scale that exceeds the grey phonon mean-free path in this material by almost an order-of-magnitude. The dispersion modification and energy scaling with diameter in individual nanowires are in excellent agreement with theory. The phonon confinement effects result in a decrease in the phonon group velocity along the nanowire axis and changes in the phonon density of states. The obtained results can lead to more efficient nanoscale control of acoustic phonons, with benefits for nanoelectronic, thermoelectric and spintronic devices.

In nanostructures, phonon confinement could lead to better control of phonon-electron coupling and thermal properties. Here, the authors use light scattering spectroscopy to measure acoustic phonons confinement in individual free-standing nanowires, their energy dispersion and energy scaling.

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe₂, 1T-TaS₂ and 1T-TiSe₂ exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS₂ less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS₂ film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

Grain-to-Grain Compositional Variations and Phase Segregation in Copper-Zinc-Tin-Sulfide Films

We have performed a rigorous investigation of the structure and composition of individual grains in copper-zinc-tin-sulfide (CZTS) films realized by sulfurization of a sputtered metal stack. Although on average close to the ideal CZTS stoichiometry, elemental analysis shows significant grain-to-grain variations in composition. High-resolution Raman spectroscopy indicates that this is accompanied by grain-to-grain structural variations as well. The intensity from the 337 cm(-1) Raman peak, generally assigned to the kesterite phase of CZTS, remains constant over a large area of the sample. On the other hand, signals from secondary phases at 376 cm(-1) (copper-tin-sulfide) and 351 cm(-1) (zinc-sulfide) show significant variation over the same area. These results confirm the great complexity inherent to this material system. Moreover, structural and compositional variations are recognized in the literature as a factor limiting the efficiency of CZTS photovoltaic devices. This study demonstrates how a seemingly homogeneous CZTS thin film can actually have considerable structural and compositional variations at the microscale, and highlights the need for routine microscale characterization in this material system.

Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm(-2)-an order-of-magnitude higher than that for copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in a low surface roughness and in the absence of the grain boundaries. These features can potentially enable the downscaling of the nanowires to lateral dimensions in a few-nm range. Our results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.

Thermal conductivity of graphene with defects induced by electron beam irradiation

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ∼7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 10(10) cm(-2) to 1.8 × 10(11) cm(-2) the thermal conductivity decreases from ∼(1.8 ± 0.2) × 10(3) W mK(-1) to ∼(4.0 ± 0.2) × 10(2) W mK(-1) near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ∼400 W mK(-1). The thermal conductivity dependence on the defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.

The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O2, N2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.

[Morphological features of structural organization of cerebellar cortex in old age]

In this science work there were conducted such researches as organometric, histological, immunomorphologic and morphometric of cerebellar cortex of 219 corpses of people (108 man and 111 woman) of young and old age. A comparative analysis of the parameters of bulb-shaped neurons in these ages revealed decrease of their height and width. It is found that distance between interval nerve cell bodies of ganglionic layer increases with age that obviously associated with progressing disorganization and death of bulb-shaped neurons. It is marked an increment in the number of immunopositive for glial fibrillary acidic protein, protide S-100 and vimentin astrocytes in granular layer and molecular layer of cerebellar cortex, and decline in the number of immunopositive for neuron-specific enolase and immunonegative for protide S-100 and vimentin bulb-shaped neurons that can be regarded as manifestation of neurodegeneration. Using immunohistochemical methods in research allows approaching more differentially to the issues of morphological assessment cerebellar cortex of elderly people and gives an opportunity to receive more objective and full information of postnatal morphogenesis.

[Comparative organometric characteristic of cerebellum of the young and old age]

The science work is based on morphological research of cerebellums of 219 corpses of people (108 man and 111 woman) of young and old age. There were used such research methods as organometric, histological and morphometric. During study a comparative analysis of the mass, linear dimensions, thickness of cerebellar cortex of young and old age was conducted. The regularities of age variability of organometric characteristic of cerebellum were revealed and they are found in the reduction of mass and linear dimensions of the people of senile age in comparison with younger people. It was determined that thickness of molecular and granular layers of cerebellum was characterized by aging changing parameters. The results of the morphological study can serve as a basis for the identification of certain regularities of age anatomy of the cerebellum and have practical significance as indicators of the norm that allows using these data in diagnostic and therapeutic work.

Engineering of the thermodynamic properties of bilayer graphene by atomic plane rotations: the role of the out-of-plane phonons

We investigated theoretically the specific heat of graphene, bilayer graphene and twisted bilayer graphene taking into account the exact phonon dispersion and density of states for each polarization branch. It is shown that contrary to a conventional belief the dispersion of the out-of-plane acoustic phonons - referred to as ZA phonons - deviates strongly from a parabolic law starting from the frequencies as low as ∼100 cm(-1). This leads to the frequency-dependent ZA phonon density of states and the breakdown of the linear dependence of the specific heat on temperature T. We established that ZA phonons determine the specific heat for T ≤ 200 K while contributions from both in-plane and out-of-plane acoustic phonons are dominant for 200 K ≤ T ≤ 500 K. In the high-temperature limit, T > 1000 K, the optical and acoustic phonons contribute approximately equally to the specific heat. The Debye temperature for graphene and twisted bilayer graphene was calculated to be around ∼1861-1864 K. Our results suggest that the thermodynamic properties of materials such as bilayer graphene can be controlled at the atomic scale by rotation of the sp(2)-carbon planes.

Zone-Folded Phonons and the Commensurate-Incommensurate Charge-Density-Wave Transition in 1T-TaSe2 Thin Films

Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The (13)(1/2) × (13)(1/2) C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to Γ. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks, and they are found to decrease from 473 to 413 K as the film thicknesses decrease from 150 to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. The Raman peak at ∼154 cm(-1) originates from the zone-folded phonons in the C-CDW phase. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.

Thermal conductivity of twisted bilayer graphene

We have investigated experimentally the thermal conductivity of suspended twisted bilayer graphene. The measurements were performed using an optothermal Raman technique. It was found that the thermal conductivity of twisted bilayer graphene is lower than that of monolayer graphene and the reference, Bernal stacked bilayer graphene in the entire temperature range examined (∼300-700 K). This finding indicates that the heat carriers - phonons - in twisted bilayer graphene do not behave in the same manner as that observed in individual graphene layers. The decrease in the thermal conductivity found in twisted bilayer graphene was explained by the modification of the Brillouin zone due to plane rotation and the emergence of numerous folded phonon branches that enhance the phonon Umklapp and normal scattering. The results obtained are important for understanding thermal transport in two-dimensional systems.