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Li P, Guo Y, Liu A, Yue X, Yuan T, Zhu J, Zhang Y, Li F. Deterministic Relation between Optical Polarization and Lattice Symmetry Revealed in Ion-Doped Single Microcrystals. ACS NANO 2022; 16:9535-9545. [PMID: 35579446 DOI: 10.1021/acsnano.2c02756] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Rare-earth ion doped crystals are of great significance for microsensing and quantum information, while the ions in the crystals emit light with spontaneous partial polarization, which is, though believed to be originated from the crystal lattice structure, still lacking a deterministic explanation that can be tested with quantitative accuracy. We report experimental evidence showing the profound physical relation between the polarization degree of light emitted by the doped ion and the lattice symmetry by demonstrating, with high precision, that the lattice constant ratio c/a directly quantifies the macroscopic effective polar angle of the electric and magnetic dipoles, which essentially determines the linear polarization degree of the emission. Based on this result, we further propose a pure optical technology to identify the three-dimensional orientation of a rod-shaped single microcrystal using the polarization-resolved microspectroscopy. Our results, demonstrating the physical origin of light polarization in ion-doped crystals, allow work toward on-demand polarization control with crystallography and provide a versatile platform for polarization-based microscale sensing in dynamical systems.
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Affiliation(s)
- Peng Li
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Yaxin Guo
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Ao Liu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Xin Yue
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Taoli Yuan
- School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, P.R. China
| | - Jingping Zhu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Yanpeng Zhang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Feng Li
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China
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Zheng B, Fan J, Chen B, Qin X, Wang J, Wang F, Deng R, Liu X. Rare-Earth Doping in Nanostructured Inorganic Materials. Chem Rev 2022; 122:5519-5603. [PMID: 34989556 DOI: 10.1021/acs.chemrev.1c00644] [Citation(s) in RCA: 147] [Impact Index Per Article: 73.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Impurity doping is a promising method to impart new properties to various materials. Due to their unique optical, magnetic, and electrical properties, rare-earth ions have been extensively explored as active dopants in inorganic crystal lattices since the 18th century. Rare-earth doping can alter the crystallographic phase, morphology, and size, leading to tunable optical responses of doped nanomaterials. Moreover, rare-earth doping can control the ultimate electronic and catalytic performance of doped nanomaterials in a tunable and scalable manner, enabling significant improvements in energy harvesting and conversion. A better understanding of the critical role of rare-earth doping is a prerequisite for the development of an extensive repertoire of functional nanomaterials for practical applications. In this review, we highlight recent advances in rare-earth doping in inorganic nanomaterials and the associated applications in many fields. This review covers the key criteria for rare-earth doping, including basic electronic structures, lattice environments, and doping strategies, as well as fundamental design principles that enhance the electrical, optical, catalytic, and magnetic properties of the material. We also discuss future research directions and challenges in controlling rare-earth doping for new applications.
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Affiliation(s)
- Bingzhu Zheng
- State Key Laboratory of Silicon Materials, Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jingyue Fan
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Bing Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, China
| | - Xian Qin
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Juan Wang
- Institute of Environmental Health, MOE Key Laboratory of Environmental Remediation and Ecosystem Health, College of Environmental & Resource Sciences, Zhejiang University, Hangzhou 310058, China
| | - Feng Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, China
| | - Renren Deng
- State Key Laboratory of Silicon Materials, Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
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Qian ZH, Cui JM, Luo XW, Zheng YX, Huang YF, Ai MZ, He R, Li CF, Guo GC. Super-resolved Imaging of a Single Cold Atom on a Nanosecond Timescale. PHYSICAL REVIEW LETTERS 2021; 127:263603. [PMID: 35029497 DOI: 10.1103/physrevlett.127.263603] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Revised: 10/03/2021] [Accepted: 11/29/2021] [Indexed: 06/14/2023]
Abstract
In cold atomic systems, fast and high-resolution microscopy of individual atoms is crucial, since it can provide direct information on the dynamics and correlations of the system. Here, we demonstrate nanosecond-scale two-dimensional stroboscopic pictures of a single trapped ion beyond the optical diffraction limit, by combining the main idea of ground-state depletion microscopy with quantum-state transition control in cold atoms. We achieve a spatial resolution up to 175 nm using a NA=0.1 objective in the experiment, which represents a more than tenfold improvement compared with direct fluorescence imaging. To show the potential of this method, we apply it to observe the secular motion of the trapped ion; we demonstrate a temporal resolution up to 50 ns with a displacement detection sensitivity of 10 nm. Our method provides a powerful tool for probing particle positions, momenta, and correlations, as well as their dynamics in cold atomic systems.
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Affiliation(s)
- Zhong-Hua Qian
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Jin-Ming Cui
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Xi-Wang Luo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Yong-Xiang Zheng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Yun-Feng Huang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Ming-Zhong Ai
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Ran He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, China
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Kornher T, Xiao DW, Xia K, Sardi F, Zhao N, Kolesov R, Wrachtrup J. Sensing Individual Nuclear Spins with a Single Rare-Earth Electron Spin. PHYSICAL REVIEW LETTERS 2020; 124:170402. [PMID: 32412264 DOI: 10.1103/physrevlett.124.170402] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Accepted: 03/26/2020] [Indexed: 05/24/2023]
Abstract
Rare-earth related electron spins in crystalline hosts are unique material systems, as they can potentially provide a direct interface between telecom band photons and long-lived spin quantum bits. Specifically, their optically accessible electron spins in solids interacting with nuclear spins in their environment are valuable quantum memory resources. Detection of nearby individual nuclear spins, so far exclusively shown for few dilute nuclear spin bath host systems such as the nitrogen-vacancy center in diamond or the silicon vacancy in silicon carbide, remained an open challenge for rare earths in their host materials, which typically exhibit dense nuclear spin baths. Here, we present the electron spin spectroscopy of single Ce^{3+} ions in a yttrium orthosilicate host, featuring a coherence time of T_{2}=124 μs. This coherent interaction time is sufficiently long to isolate proximal ^{89}Y nuclear spins from the nuclear spin bath of ^{89}Y. Furthermore, it allows for the detection of a single nearby ^{29}Si nuclear spin, native to the host material with ∼5% abundance. This study opens the door to quantum memory applications in rare-earth ion related systems based on coupled environmental nuclear spins, potentially useful for quantum error correction schemes.
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Affiliation(s)
- Thomas Kornher
- 3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany
| | - Da-Wu Xiao
- Beijing Computational Science Research Center, Haidian District, Beijing 100193, China
| | - Kangwei Xia
- 3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany
| | - Fiammetta Sardi
- 3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany
| | - Nan Zhao
- Beijing Computational Science Research Center, Haidian District, Beijing 100193, China
| | - Roman Kolesov
- 3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany
| | - Jörg Wrachtrup
- 3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany
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Affiliation(s)
| | - Jonathan P. Goss
- School of Engineering, University of Newcastle, Newcastle upon Tyne, NE1 7RU, U.K
| | - Ben L. Green
- Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K
| | - Paul W. May
- School of Chemistry, University of Bristol, Bristol, BS8 1TS, U.K
| | - Mark E. Newton
- Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K
| | - Chloe V. Peaker
- Gemological Institute of America, 50 West 47th Street, New York, New York 10036, United States
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Groot-Berning K, Kornher T, Jacob G, Stopp F, Dawkins ST, Kolesov R, Wrachtrup J, Singer K, Schmidt-Kaler F. Deterministic Single-Ion Implantation of Rare-Earth Ions for Nanometer-Resolution Color-Center Generation. PHYSICAL REVIEW LETTERS 2019; 123:106802. [PMID: 31573288 DOI: 10.1103/physrevlett.123.106802] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2019] [Indexed: 05/24/2023]
Abstract
Single dopant atoms or dopant-related defect centers in a solid state matrix are of particular importance among the physical systems proposed for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. Here, using a deterministic source of single laser-cooled Pr^{+} ions, we present the fabrication of arrays of praseodymium color centers in yttrium-aluminum-garnet substrates. The beam of single Pr^{+} ions is extracted from a Paul trap and focused down to 30(9) nm. Using a confocal microscope, we determine a conversion yield into active color centers of up to 50% and realize a placement precision of 34 nm.
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Affiliation(s)
- Karin Groot-Berning
- QUANTUM, Institut für Physik, Universität Mainz, Staudingerweg 7, 55128 Mainz, Germany
| | - Thomas Kornher
- Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart, Germany
| | - Georg Jacob
- QUANTUM, Institut für Physik, Universität Mainz, Staudingerweg 7, 55128 Mainz, Germany
| | - Felix Stopp
- QUANTUM, Institut für Physik, Universität Mainz, Staudingerweg 7, 55128 Mainz, Germany
| | - Samuel T Dawkins
- Experimentalphysik I, Institut für Physik, Universität Kassel, Heinrich-Plett-Straße 40, 34132 Kassel, Germany
| | - Roman Kolesov
- Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart, Germany
| | - Jörg Wrachtrup
- Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart, Germany
| | - Kilian Singer
- Experimentalphysik I, Institut für Physik, Universität Kassel, Heinrich-Plett-Straße 40, 34132 Kassel, Germany
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