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Sutter P, Unocic RR, Sutter E. Tuning of Single Mixed (Helical) Dislocations in Core-Shell van der Waals Nanowires. J Am Chem Soc 2023; 145:20503-20510. [PMID: 37695639 DOI: 10.1021/jacs.3c06469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/12/2023]
Abstract
Linear defects (dislocations) not only govern the mechanical properties of crystalline solids but they can also produce distinct electronic, thermal, and topological effects. Accessing this functionality requires control over the placement and geometry of single dislocations embedded in a small host volume to maximize emerging effects. Here we identify a synthetic route for rational dislocation placement and tuning in van der Waals nanowires, where the layered crystal limits the possible defect configurations and the nanowire architecture puts single dislocations in close proximity to the entire host volume. While homogeneous layered nanowires host single screw dislocations, the synthesis of radial nanowire heterostructures (here exemplified by GeS-Ge1-xSnxS monochalcogenide core-shell nanowires) transforms the defect into a mixed (helical) dislocation whose edge/screw ratio is tunable via the core-shell lattice mismatch. The ability to design nanomaterials with control over individual mixed dislocations paves the way for identifying the functional properties of dislocations and harnessing them in technology.
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Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States
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Sutter P, Khosravi-Khorashad L, Ciobanu CV, Sutter E. Chirality and dislocation effects in single nanostructures probed by whispering gallery modes. MATERIALS HORIZONS 2023; 10:3830-3839. [PMID: 37424314 DOI: 10.1039/d3mh00693j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
Nanostructures such as nanoribbons and -wires are of interest as components for building integrated photonic systems, especially if their basic functionality as dielectric waveguides can be extended by chiroptical phenomena or modifications of their optoelectronic properties by extended defects, such as dislocations. However, conventional optical measurements typically require monodisperse (and chiral) ensembles, and identifying emerging chiral optical activity or dislocation effects in single nanostructures has remained an unmet challenge. Here we show that whispering gallery modes can probe chirality and dislocation effects in single nanowires. Wires of the van der Waals semiconductor germanium(II) sulfide (GeS), obtained by vapor-liquid-solid growth, invariably form as growth spirals around a single screw dislocation that gives rise to a chiral structure and can modify the electronic properties. Cathodoluminescence spectroscopy on single tapered GeS nanowires containing joined dislocated and defect-free segments, augmented by numerical simulations and ab-initio calculations, identifies chiral whispering gallery modes as well as a pronounced modulation of the electronic structure attributed to the screw dislocation. Our results establish chiral light-matter interactions and dislocation-induced electronic modifications in single nanostructures, paving the way for their application in multifunctional photonic architectures.
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Affiliation(s)
- Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
| | | | - Cristian V Ciobanu
- Department of Mechanical Engineering, Colorado School of Mines, Golden, CO 80401, USA
| | - Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
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3
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Jin KH, Jiang W, Sethi G, Liu F. Topological quantum devices: a review. NANOSCALE 2023; 15:12787-12817. [PMID: 37490310 DOI: 10.1039/d3nr01288c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/26/2023]
Abstract
The introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.
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Affiliation(s)
- Kyung-Hwan Jin
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Wei Jiang
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Gurjyot Sethi
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA.
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA.
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Zhang X, Liu J, Liu F. Topological Superconductivity Based on Antisymmetric Spin-Orbit Coupling. NANO LETTERS 2022; 22:9000-9005. [PMID: 36350799 DOI: 10.1021/acs.nanolett.2c03213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Topological superconductivity (TSC) has drawn much attention for its fundamental interest and application in quantum computation. An outstanding challenge is the lack of intrinsic TSC materials with a p-wave pairing gap, which has led to the development of an effective p-wave theory of coupling s-wave gap with Rashba spin-orbit coupling (RSOC). However, the RSOC-strict mechanism and materials pose still both fundamental and practical limitations. Here, we generalize this theory to antisymmetric SOC (ASOC). Using k·p perturbation theory, we demonstrate that 2D crystals, with point groups of C2, C4, C6, C2v, C4v, C6v, D2, D4, D6, S4, or D2d, can all facilitate the desired ASOC. Remarkably, this enables us to discover 314 TSC candidates by screening 2D material databases, which are further confirmed by first-principles calculations of Majorana boundary modes and the topological invariant of the superconducting gap. Our work fundamentally enriches TSC theory and greatly expands the classes of TSC materials for experimental exploration.
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Affiliation(s)
- Xiaoming Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong266100, China
| | - Jiale Liu
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong266100, China
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah84112, United States
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Chen J, Wu K, Hu W, Yang J. Spin-Orbit Coupling in 2D Semiconductors: A Theoretical Perspective. J Phys Chem Lett 2021; 12:12256-12268. [PMID: 34929086 DOI: 10.1021/acs.jpclett.1c03662] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
This theoretical Perspective reviews spin-orbit coupling (SOC), including the Rashba effect and Dresselhaus effect, in two-dimensional (2D) semiconductors. We first introduce the origin of the Rashba effect and Dresselhaus effect using the Hamiltonian models; we then summarize 2D Rashba semiconductors predicted by first-principles density functional theory (DFT) calculations, including AB binary monolayers, Janus monolayers, 2D perovskites, and so on. We also review various manipulating techniques of the Rashba effect on 2D semiconductors, such as external electric field, strain engineering, charge doping, interlayer interactions, proximity effect of substrates, and external magnetic field. We then briefly summarize the applications of SOC, including the generation, detection, and manipulation of spin currents in spin Hall effect transistors and spin field effect transistors. Finally, we conclude this Perspective and propose three promising research fields of SOC in low-dimensional semiconductors, including the nonlinear SOC Hamiltonian model, 2D ferroelectric SOC semiconductors, and 1D Rashba model and semiconductors. This theoretical Perspective enriches the fundamental understanding of SOC in 2D semiconductors and will help in the design of new types of spintronic devices in future experiments.
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Affiliation(s)
- Jiajia Chen
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Kai Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Hu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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Jin KH, Oh E, Stania R, Liu F, Yeom HW. Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer. NANO LETTERS 2021; 21:9468-9475. [PMID: 34747625 DOI: 10.1021/acs.nanolett.1c02811] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nonvanishing Berry curvature dipole (BCD) and persistent spin texture (PST) are intriguing physical manifestations of electronic states in noncentrosymmetric 2D materials. The former induces a nonlinear Hall conductivity while the latter offers a coherent spin current. Based on density-functional-theory (DFT) calculations, we demonstrate the coexistence of both phenomena in a Bi(110) monolayer with a distorted phosphorene structure. Both effects are concurrently enhanced due to the strong spin-orbit coupling of Bi while the structural distortion creates internal in-plane ferroelectricity with inversion asymmetry. We further succeed in fabricating a Bi(110) monolayer in the desired phosphorene structure on the NbSe2 substrate. Detailed atomic and electronic structures of the Bi(110)/NbSe2 heterostructure are characterized by scanning tunneling microscopy/spectroscopy and angle-resolved-photoemission spectroscopy. These results are consistent with DFT calculations which indicate the large BCD and PST are retained. Our results suggest the Bi(110)/NbSe2 heterostructure as a promising platform to exploit nonlinear Hall and coherent spin transport properties together.
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Affiliation(s)
- Kyung-Hwan Jin
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Eunseok Oh
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Roland Stania
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
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Jiang W, de Sousa DJP, Wang JP, Low T. Giant Anomalous Hall Effect due to Double-Degenerate Quasiflat Bands. PHYSICAL REVIEW LETTERS 2021; 126:106601. [PMID: 33784124 DOI: 10.1103/physrevlett.126.106601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2020] [Accepted: 01/19/2021] [Indexed: 06/12/2023]
Abstract
We propose a novel approach to achieve a giant anomalous Hall effect (AHE) in materials with flat bands (FBs). FBs are accompanied by small electronic bandwidths, which consequently increases the momentum separation (K) within pair of Weyl points and, thus, the integrated Berry curvature. Starting from a simple model with a single pair of Weyl nodes, we demonstrated the increase of K and the AHE by decreasing the bandwidth. It is further expanded to a realistic pyrochlore lattice model with characteristic double-degenerated FBs, where we discovered a giant AHE while maximizing the K with nearly vanishing band dispersion of FBs. We identify that such a model system can be realized and modulated through strain engineering in both pyrochlore and spinel compounds based on first-principles calculations, validating our theoretical model and providing a feasible platform for experimental exploration.
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Affiliation(s)
- Wei Jiang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Duarte J P de Sousa
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Jian-Ping Wang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
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Chudzinski P. Contribution of 1D topological states to the extraordinary thermoelectric properties of Bi 2Te 3. Proc Math Phys Eng Sci 2020; 476:20200088. [PMID: 32831608 DOI: 10.1098/rspa.2020.0088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2020] [Accepted: 06/12/2020] [Indexed: 11/12/2022] Open
Abstract
Topological insulators are frequently also one of the best-known thermoelectric materials. It has been recently discovered that in three-dimensional (3D) topological insulators each skew dislocation can host a pair of one-dimensional (1D) topological states-a helical Tomonaga-Luttinger liquid (TLL). We derive exact analytical formulae for thermoelectric Seebeck coefficient in TLL and investigate up to what extent one can ascribe the outstanding thermoelectric properties of Bi2Te3 to these 1D topological states. To this end we take a model of a dense dislocation network and find an analytic formula for an overlap between 1D (the TLL) and 3D electronic states. Our study is applicable to a weakly n-doped Bi2Te3 but also to a broader class of nano-structured materials with artificially created 1D systems. Furthermore, our results can be used at finite frequency settings, e.g. to capture transport activated by photo-excitations.
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Affiliation(s)
- P Chudzinski
- School of Mathematics and Physics, Queen's University Belfast, Belfast, UK
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Shi XL, Zou J, Chen ZG. Advanced Thermoelectric Design: From Materials and Structures to Devices. Chem Rev 2020; 120:7399-7515. [PMID: 32614171 DOI: 10.1021/acs.chemrev.0c00026] [Citation(s) in RCA: 329] [Impact Index Per Article: 82.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.
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Affiliation(s)
- Xiao-Lei Shi
- Centre for Future Materials, University of Southern Queensland, Springfield Central, Queensland 4300, Australia.,School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
| | - Jin Zou
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia.,Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, Queensland 4072, Australia
| | - Zhi-Gang Chen
- Centre for Future Materials, University of Southern Queensland, Springfield Central, Queensland 4300, Australia.,School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
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Han J, Zhang A, Chen M, Gao W, Jiang Q. Giant Rashba splitting in one-dimensional atomic tellurium chains. NANOSCALE 2020; 12:10277-10283. [PMID: 32363363 DOI: 10.1039/d0nr00443j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The search for a one-dimensional (1D) system with purely 1D bands and strong Rashba spin splitting is essential for the realization of Majorana fermions and spin transport but presents a fundamental challenge to date. Herein, using first-principles calculations, we demonstrated that atomic Tellurium (Te) chains exhibit purely 1D bands and giant Rashba spin splitting, and their splitting parameters depend strongly on strain and structure distortion. This phenomenon stems from the helical structure of atomic Te chains, which can not only sustain significant strain but also realize the synergy of orbital angular momentum and in-chain potential gradient in enhancing spin splitting. The structure distortion of stretched helical Te chains is critical to execute this synergy, generating a large Rashba spin splitting among the known systems. Our findings proposed a potential 1D giant Rashba splitting system for exploring spintronics and Majorana fermions, and provide routes for engineering spin splitting in other materials.
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Affiliation(s)
- Jie Han
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University 130022, Changchun, China.
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Li X, Zhang S, Huang H, Hu L, Liu F, Wang Q. Unidirectional Spin-Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices. NANO LETTERS 2019; 19:6005-6012. [PMID: 31386373 DOI: 10.1021/acs.nanolett.9b01812] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Spin-orbit (SO) interaction is an indispensable element in the field of spintronics for effectively manipulating the spin of carriers. However, in crystalline solids, the momentum-dependent SO effective magnetic field generally results in spin randomization by a process known as the Dyakonov-Perel spin relaxation, leading to the loss of spin information. To overcome this obstacle, the persistent spin helix (PSH) state with a unidirectional SO field was proposed but difficult to achieve in real materials. Here, on the basis of first-principles calculations and tight-binding model analysis, we report for the first time a unidirectional SO field in monolayer transition metal dichalcogenides (TMDs, MX2, M = Mo, W; and X = S, Se) induced by two parallel chalcogen vacancy lines. By changing the relative positions of the two vacancy lines, the direction of the SO field can be tuned from x to y. Moreover, using k·p perturbation theory and group theory analysis, we demonstrate that the emerging unidirectional SO field is subject to both the structural symmetry and 1D nature of such defects engineered in 2D TMDs. In particular, through transport calculations, we confirm that the predicted SO states carry highly coherent spin current. Our findings shed new light on creating PSH states for high-performance spintronic devices.
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Affiliation(s)
- Xiaoyin Li
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, College of Engineering , Peking University , Beijing 100871 , China
- Department of Materials Science and Engineering , University of Utah , Salt Lake City , Utah 84112 , United States
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , China
- Department of Materials Science and Engineering , University of Utah , Salt Lake City , Utah 84112 , United States
| | - Huaqing Huang
- Department of Materials Science and Engineering , University of Utah , Salt Lake City , Utah 84112 , United States
| | - Lin Hu
- Department of Materials Science and Engineering , University of Utah , Salt Lake City , Utah 84112 , United States
- Beijing Computational Science Research Center , Beijing 100193 , China
| | - Feng Liu
- Department of Materials Science and Engineering , University of Utah , Salt Lake City , Utah 84112 , United States
| | - Qian Wang
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, College of Engineering , Peking University , Beijing 100871 , China
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He J, Ding G, Zhong C, Li S, Li D, Zhang G. Cr 2TiC 2-based double MXenes: novel 2D bipolar antiferromagnetic semiconductor with gate-controllable spin orientation toward antiferromagnetic spintronics. NANOSCALE 2018; 11:356-364. [PMID: 30534705 DOI: 10.1039/c8nr07692h] [Citation(s) in RCA: 42] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Antiferromagnetic (AF) spin devices could be one of the representative components for applications of spintronics thanks to the numerous advantages such as resistance to magnetic field perturbation, stray field-free operation, and ultrahigh device operation speed. However, detecting and manipulating the spin of AF materials is still a major challenge due to the absence of a net magnetic moment and spin degeneracy in the band structure. Bipolar antiferromagnetic semiconductors are promising solutions to these problems. Herein, using density functional theory calculations, we present asymmetrical functionalized double MXenes (Cr2TiC2FCl) that behave as a novel bipolar antiferromagnetic semiconductor (BAFS) with vanishing magnetism, in which the valence band and conduction band around the Fermi level exhibit opposite spin directions. Remarkably, gate voltage can manipulate the spin orientation of the AF Cr2TiC2FCl and lead to a transition from BAFS to half-metal antiferromagnets (HMAF). Moreover, the mixed functionalized double MXenes with various F/Cl concentrations show the BAFS feature due to the different chemical environment for the Cr atom. Our results presented herein open a new strategy towards AF spintronics and the realization of the AF spin field effect transistor.
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Affiliation(s)
- Junjie He
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China
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