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Wang T, Yu X. Helicity-Sensitive Terahertz Detection in Monolayer 1T'-WTe 2. ACS Appl Mater Interfaces 2024. [PMID: 38619870 DOI: 10.1021/acsami.3c18898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Valleytronics, identified as electronic properties of the energy band extrema in momentum space, has been intensively revived following the emergence of two-dimensional transition metal dichalcogenides (TMDCs) as their valley information can be controlled and probed through the spin angular momentum of light. Previous optical investigations of valleytronics have been limited to the visible/near-infrared spectral regime through which the carriers of most TMDCs can be excited. Monolayer 1T'-WTe2 with broken time-reversal symmetry provides a fertile platform to study the long-wavelength photonic properties in different valleys. Here, we employed a circularly polarized terahertz (THz) laser to selectively excite the valley of monolayer 1T'-WTe2 and demonstrate that the helicity-dependent photoresponse is generated via the photogalvanic effect (PGE). We also observed that the photocurrent is controlled by circular polarization and the external electric field. Because of the tunable Berry curvature dipole derived from the nontrivial wave functions near the inverted gap edge in monolayer WTe2, the bandgap can be tuned efficiently. Our results provide a versatile venue for controlling, detecting, and processing valleytronics and applications in on-chip THz imaging and quantum information processing.
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Affiliation(s)
- Ting Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Xuechao Yu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Lim S, Singh S, Huang FT, Pan S, Wang K, Kim J, Kim J, Vanderbilt D, Cheong SW. Magnetochiral tunneling in paramagnetic Co 1/3NbS 2. Proc Natl Acad Sci U S A 2024; 121:e2318443121. [PMID: 38412131 DOI: 10.1073/pnas.2318443121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 01/25/2024] [Indexed: 02/29/2024] Open
Abstract
Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co1/3NbS2, the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.
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Affiliation(s)
- Seongjoon Lim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Sobhit Singh
- Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
- Materials Science Program, University of Rochester, Rochester, NY 14627
| | - Fei-Ting Huang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Shangke Pan
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
- State Key Laboratory Base of Novel Function Materials and Preparation Science, School of Material Sciences and Chemical Engineering, Ningbo University, Ningbo 315211, China
| | - Kefeng Wang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Jaewook Kim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Jinwoong Kim
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - David Vanderbilt
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Sang-Wook Cheong
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
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Li S, Wang X, Yang Z, Zhang L, Teo SL, Lin M, He R, Wang N, Song P, Tian W, Loh XJ, Zhu Q, Sun B, Wang XR. Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS) 1.17(NbS 2) 3. ACS Appl Mater Interfaces 2024; 16:11043-11049. [PMID: 38349718 DOI: 10.1021/acsami.3c18319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/01/2024]
Abstract
The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)1.17(NbS2)3. While the THE is prohibited in individual NbS2 and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.
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Affiliation(s)
- Shengyao Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xueyan Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Zherui Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Lijuan Zhang
- Tsinghua-Berkeley Shenzhen Institute and Shenzhen Geim Graphene Center, Tsinghua University, Shenzhen 518055, Guangdong, China
| | - Siew Lang Teo
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ming Lin
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ri He
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Peng Song
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| | - Wanghao Tian
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| | - Xian Jun Loh
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Qiang Zhu
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), Institute of Sustainability for Chemicals, 1 Pesek Road, Jurong Island, Singapore 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Bo Sun
- Tsinghua-Berkeley Shenzhen Institute and Shenzhen Geim Graphene Center, Tsinghua University, Shenzhen 518055, Guangdong, China
- Tsinghua Shenzhen International Graduate School, Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Institute of Materials Research, Shenzhen 518055, Guangdong, China
| | - X Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
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Saha S, Narayan A. Nonlinear Hall effect in Rashba systems with hexagonal warping. J Phys Condens Matter 2023; 35. [PMID: 37595610 DOI: 10.1088/1361-648x/acf1eb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Accepted: 08/18/2023] [Indexed: 08/20/2023]
Abstract
Rashba spin-orbit coupled systems are an important class of materials noted for diverse fundamental and applied phenomena. Recently, the emergence of non-linear Hall effect under conditions of time-reversal symmetry has been discovered in materials with broken inversion symmetry. In this work, we study the second- and third-order Hall response in Rashba systems with hexagonal warping. Starting with a low-energy model, we obtain the analytic expressions and discover the unique dipole profile in Rashba systems with hexagonal warping. Furthermore, we extend the analysis using a realistic tight-binding model. Next, we predict the existence of a third-order Hall effect in these systems, and calculate the Berry connection polarizability tensor analytically. We also show how the model parameters affect the third-order conductivity. Our predictions can help in the experimental realization of Berry curvature multipole physics in Rashba materials with hexagonal warping, and provide a new platform for engineering the non-linear Hall effects.
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Affiliation(s)
- Soumadeep Saha
- Undergraduate Programme, Indian Institute of Science, Bangalore 560012, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
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Nishijima T, Watanabe T, Sekiguchi H, Ando Y, Shigematsu E, Ohshima R, Kuroda S, Shiraishi M. Ferroic Berry Curvature Dipole in a Topological Crystalline Insulator at Room Temperature. Nano Lett 2023; 23:2247-2252. [PMID: 36858796 DOI: 10.1021/acs.nanolett.2c04900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT), and nonvolatile (i.e., ferroic) BCDs have not yet been discovered, hindering further progress in topological physics. In this work, we demonstrate a switchable and nonvolatile BCD effect at RT in a topological crystalline insulator, Pb1-xSnxTe (PST), which is attributed to ferroic distortion. Surprisingly, the magnitude of the ferroic BCD is several orders of magnitude greater than that of the nonferroic BCDs that appear, for example, in transition metal dichalcogenides. The discovery of this ferroic and extraordinarily large BCD in PST could pave the way for further progress in topological materials science and the engineering of novel topological devices.
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Affiliation(s)
- Taiki Nishijima
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Takuto Watanabe
- Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan
| | - Hiroaki Sekiguchi
- Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan
| | - Yuichiro Ando
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Ei Shigematsu
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Ryo Ohshima
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Shinji Kuroda
- Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan
| | - Masashi Shiraishi
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
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Roy S, Narayan A. Non-linear Hall effect in multi-Weyl semimetals. J Phys Condens Matter 2022; 34:385301. [PMID: 35820408 DOI: 10.1088/1361-648x/ac8091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Accepted: 07/12/2022] [Indexed: 06/15/2023]
Abstract
In the presence of time reversal symmetry, a non-linear Hall effect can occur in systems without an inversion symmetry. One of the prominent candidates for detection of such Hall signals are Weyl semimetals. In this article, we investigate the Berry curvature induced second and third order Hall effect in multi-Weyl semimetals with topological chargesn=1,2,3. We use low energy effective models to obtain general analytical expressions and discover the presence of a large Berry curvature dipole (BCD) in multi-Weyl semimetals, compared to usual (n = 1) Weyl semimetals. We also study the BCD in a realistic tight-binding lattice model and observe two different kinds of variation with increasing topological charge-these can be attributed to different underlying Berry curvature components. We provide estimates of the signatures of second harmonic of Hall signal in multi-Weyl semimetals, which can be detected experimentally. Furthermore, we predict the existence of a third order Hall signal in multi-Weyl semimetals. We derive the analytical expressions of Berry connection polarizability tensor, which is responsible for third order effects, using a low energy model and estimate the measurable conductivity. Our work can help guide experimental discovery of Berry curvature multipole physics in multi-Weyl semimetals.
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Affiliation(s)
- Saswata Roy
- Undergraduate Programme, Indian Institute of Science, Bangalore 560012, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
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Abstract
Nonvanishing Berry curvature dipole (BCD) and persistent spin texture (PST) are intriguing physical manifestations of electronic states in noncentrosymmetric 2D materials. The former induces a nonlinear Hall conductivity while the latter offers a coherent spin current. Based on density-functional-theory (DFT) calculations, we demonstrate the coexistence of both phenomena in a Bi(110) monolayer with a distorted phosphorene structure. Both effects are concurrently enhanced due to the strong spin-orbit coupling of Bi while the structural distortion creates internal in-plane ferroelectricity with inversion asymmetry. We further succeed in fabricating a Bi(110) monolayer in the desired phosphorene structure on the NbSe2 substrate. Detailed atomic and electronic structures of the Bi(110)/NbSe2 heterostructure are characterized by scanning tunneling microscopy/spectroscopy and angle-resolved-photoemission spectroscopy. These results are consistent with DFT calculations which indicate the large BCD and PST are retained. Our results suggest the Bi(110)/NbSe2 heterostructure as a promising platform to exploit nonlinear Hall and coherent spin transport properties together.
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Affiliation(s)
- Kyung-Hwan Jin
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Eunseok Oh
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Roland Stania
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
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