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Xie L, Yang H, Yang Y, Chen Z, Li H, Li Z, Liu D. Multiphoton emission of single CdZnSe/ZnS quantum dots coupled with plasmonic Au nanoparticles. Phys Chem Chem Phys 2024; 26:5607-5614. [PMID: 38285471 DOI: 10.1039/d3cp03599a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
The fluorescence blinking and low multiphoton emission of quantum dots (QDs) have limited their application in lasing, light-emitting diodes, and so on. Coupling of single QDs to plasmonic nanostructures is an effective approach to control the photon properties. Here plasmon-exciton systems including Au nanoparticles and CdZnSe/ZnS QDs were investigated at the single particle level. With the modulation of the local electromagnetic field, the fluorescence intensity of single QDs is increased, accompanied by a significant suppression in blinking behavior, and the lifetime is shortened from 15 ns to 2 ns. Moreover, the second-order photon intensity correlation at zero lag time g2(0) of coupled single QDs is larger than 0.5, indicating an increased probability of multiphoton emission. The enhancement factors of radiative and nonradiative decay rates of QDs coupled with Au nanoparticles are calculated. The sharply increased radiative decay rate can be comparable to the nonradiative Auger rate, leading to dominated multiple exciton radiative recombination with PL intensity enhancement, suppressed blinking, lifetime shortening, and multiphoton emission. The results of the exciton decay dynamics and emission properties of single QDs in this work are helpful in exploring the mechanism of plasmon-exciton interaction and optoelectronic application of single QDs.
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Affiliation(s)
- Luogang Xie
- School of Electronics and Information, Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Henan 450002, China.
| | - Hongjun Yang
- School of Electronics and Information, Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Henan 450002, China.
| | - Yang Yang
- School of Electronics and Information, Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Henan 450002, China.
| | - Ziyang Chen
- School of Electronics and Information, Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Henan 450002, China.
| | - Hangtian Li
- School of Electronics and Information, Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Henan 450002, China.
| | - Zijiong Li
- School of Electronics and Information, Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Henan 450002, China.
| | - Dewei Liu
- School of Electronics and Information, Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Henan 450002, China.
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2
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Lopez-Rodriguez B, van der Kolk R, Aggarwal S, Sharma N, Li Z, van der Plaats D, Scholte T, Chang J, Gröblacher S, Pereira SF, Bhaskaran H, Zadeh IE. High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature. ACS PHOTONICS 2023; 10:3748-3754. [PMID: 37869559 PMCID: PMC10588551 DOI: 10.1021/acsphotonics.3c00968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Indexed: 10/24/2023]
Abstract
Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second- and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are time-consuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Qint = (4.7-5.7) × 105 corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO3 platforms.
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Affiliation(s)
- Bruno Lopez-Rodriguez
- Department
of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Roald van der Kolk
- Kavli
Institute of Nanoscience, Delft University
of Technology, Delft 2628 CD, The Netherlands
| | - Samarth Aggarwal
- Department
of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.
| | - Naresh Sharma
- Department
of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Zizheng Li
- Department
of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Daniel van der Plaats
- Department
of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Thomas Scholte
- Department
of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Jin Chang
- Department
of Quantum Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Simon Gröblacher
- Department
of Quantum Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Silvania F. Pereira
- Department
of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Harish Bhaskaran
- Department
of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.
| | - Iman Esmaeil Zadeh
- Department
of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands
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3
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Laferrière P, Yeung E, Miron I, Northeast DB, Haffouz S, Lapointe J, Korkusinski M, Poole PJ, Williams RL, Dalacu D. Unity yield of deterministically positioned quantum dot single photon sources. Sci Rep 2022; 12:6376. [PMID: 35430589 PMCID: PMC9013374 DOI: 10.1038/s41598-022-10451-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Accepted: 03/23/2022] [Indexed: 11/24/2022] Open
Abstract
We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed.
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4
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Wang DS, Anali İ, Yelin SF. Entangled photons from composite cascade emitters. OPTICS EXPRESS 2022; 30:11317-11330. [PMID: 35473079 DOI: 10.1364/oe.452935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Accepted: 03/09/2022] [Indexed: 06/14/2023]
Abstract
One of the most versatile sources for entangled photons are emitters that interact via more than one tunable mechanism. Here, we demonstrate how hybridization and dipole-dipole interactions-potentially simultaneously available in colloidal quantum dots and molecular aggregates-leveraged in conjunction can couple simple, well understood emitters into composite emitters with flexible control over the level structure. We show that cascade decay through carefully designed level structures can result in emission of frequency-entangled photons with Bell states and three-photon GHZ states as example cases. These results pave the way toward rational design of quantum optical emitters of entangled photons.
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5
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Magnetic tuning of tunnel coupling between InAsP double quantum dots in InP nanowires. Sci Rep 2022; 12:5100. [PMID: 35332174 PMCID: PMC8948226 DOI: 10.1038/s41598-022-08548-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/17/2021] [Accepted: 03/02/2022] [Indexed: 11/30/2022] Open
Abstract
We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies.
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6
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Jin T, Li X, Liu R, Ou W, Zhu Y, Wang X, Liu J, Huo Y, Ou X, Zhang J. Generation of Polarization-Entangled Photons from Self-Assembled Quantum Dots in a Hybrid Quantum Photonic Chip. NANO LETTERS 2022; 22:586-593. [PMID: 35025517 DOI: 10.1021/acs.nanolett.1c03226] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Integration of entangled photon sources in a quantum photonic chip has enabled the most envisioned quantum photonic technologies to be performed in a compact platform with enhanced complexity and stability as compared to bulk optics. However, the technology to generate entangled photon states in a quantum photonic chip that are neither probabilistic nor restricted to low efficiency is still missing. Here, we introduce a hybrid quantum photonic chip where waveguide-coupled self-assembled quantum dots (QDs) are heterogeneously integrated onto a piezoelectric actuator. By exerting an anisotropic stress, we experimentally show that the fine structure splitting of waveguide-coupled quantum dots can be effectively eliminated. This allows for the demonstration of chip-integrated self-assembled QDs for generating and routing polarization-entangled photon pairs. Our results presented here would open up an avenue for implementing on-demand quantum information processing in a quantum photonic chip by employing all-solid-state self-assembled quantum dot emitters.
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Affiliation(s)
- Tingting Jin
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xueshi Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Runze Liu
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China
| | - Weiwen Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yifan Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xudong Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Yongheng Huo
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China
- Hefei National Laboratory for Physical Sciences at Microscale and Department of Engineering and Applied Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xin Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiaxiang Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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7
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Northeast DB, Dalacu D, Weber JF, Phoenix J, Lapointe J, Aers GC, Poole PJ, Williams RL. Optical fibre-based single photon source using InAsP quantum dot nanowires and gradient-index lens collection. Sci Rep 2021; 11:22878. [PMID: 34819556 PMCID: PMC8613206 DOI: 10.1038/s41598-021-02287-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Accepted: 11/11/2021] [Indexed: 11/09/2022] Open
Abstract
We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled single photons. Using pulsed excitation, we demonstrate on-demand operation with a single photon purity of 98.5% when exciting at saturation in a device with a source-fibre collection efficiency of 35% and an overall single photon collection efficiency of 10%. We also demonstrate "plug and play" operation using room temperature photoluminescence from the InP nanowire for room temperature alignment.
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Affiliation(s)
| | - Dan Dalacu
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - John F Weber
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - Jason Phoenix
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada.,University of Waterloo, Waterloo, N2L 3G1, Canada
| | - Jean Lapointe
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - Geof C Aers
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - Philip J Poole
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
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8
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Masud AA, Arefin SMN, Fairooz F, Fu X, Moonschi F, Srijanto BR, Neupane KR, Aryal S, Calabro R, Kim DY, Collier CP, Chowdhury MH, Richards CI. Photoluminescence Enhancement, Blinking Suppression, and Improved Biexciton Quantum Yield of Single Quantum Dots in Zero Mode Waveguides. J Phys Chem Lett 2021; 12:3303-3311. [PMID: 33765768 DOI: 10.1021/acs.jpclett.1c00450] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
The capability of quantum dots to generate both single and multiexcitons can be harnessed for a wide variety of applications, including those that require high optical gain. Here, we use time-correlated photoluminescence (PL) spectroscopy to demonstrate that the isolation of single CdSeTe/ZnS core-shell, nanocrystal quantum dots (QDs) in Zero Mode Waveguides (ZMWs) leads to a significant modification in PL intensity, blinking dynamics, and biexciton behavior. QDs in aluminum ZMWs (AlZMWs) exhibited a 15-fold increase in biexciton emission, indicating a preferential enhancement of the biexciton radiative decay rate as compared to the single exciton rate. The increase in biexciton behavior was accompanied by a decrease in blinking events due to a shortening in the dark state residence time. These results indicate that plasmon mediated enhanced decay rates of QDs in AlZMWs lead to substantial changes in the photophysical properties of single quantum dots, including an increase in biexciton behavior.
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Affiliation(s)
- Abdullah Al Masud
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - S M Nayeem Arefin
- Department of Electrical and Electronic Engineering, Independent University, Bangladesh (IUB), Dhaka, Bangladesh
| | - Fatema Fairooz
- Department of Electrical and Electronic Engineering, Independent University, Bangladesh (IUB), Dhaka, Bangladesh
| | - Xu Fu
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Faruk Moonschi
- Department of Physiology, University of Kentucky, Lexington, Kentucky 40536, United States
| | - Bernadeta R Srijanto
- Center for Nanophase Materials Sciences, Oakridge National Lab, Oakridge, Tennessee 37831, United States
| | - Khaga Raj Neupane
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Surya Aryal
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Rosemary Calabro
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Doo-Young Kim
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - C Patrick Collier
- Center for Nanophase Materials Sciences, Oakridge National Lab, Oakridge, Tennessee 37831, United States
| | - Mustafa Habib Chowdhury
- Department of Electrical and Electronic Engineering, Independent University, Bangladesh (IUB), Dhaka, Bangladesh
| | - Christopher I Richards
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
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