1
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Sponfeldner L, Leisgang N, Shree S, Paradisanos I, Watanabe K, Taniguchi T, Robert C, Lagarde D, Balocchi A, Marie X, Gerber IC, Urbaszek B, Warburton RJ. Capacitively and Inductively Coupled Excitons in Bilayer MoS_{2}. PHYSICAL REVIEW LETTERS 2022; 129:107401. [PMID: 36112433 DOI: 10.1103/physrevlett.129.107401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 01/21/2022] [Accepted: 06/30/2022] [Indexed: 06/15/2023]
Abstract
The coupling of intralayer A and B excitons and interlayer excitons (IE) is studied in a two-dimensional semiconductor, homobilayer MoS_{2}. It is shown that the measured optical susceptibility reveals both the magnitude and the phase of the coupling constants. The IE and B excitons couple via a 0-phase (capacitive) coupling; the IE and A excitons couple via a π-phase (inductive) coupling. The IE-B and IE-A coupling mechanisms are interpreted as hole tunneling and electron-hole exchange, respectively. The couplings imply that even in a monolayer, the A and B excitons have mixed spin states. Using the IE as a sensor, the A-B intravalley exchange coupling is determined. Finally, we realize a bright and highly tunable lowest-energy momentum-direct exciton at high electric fields.
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Affiliation(s)
- Lukas Sponfeldner
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Nadine Leisgang
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Shivangi Shree
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Ioannis Paradisanos
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Cedric Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Delphine Lagarde
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Andrea Balocchi
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Xavier Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Iann C Gerber
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - Richard J Warburton
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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2
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Shi Q, Shih EM, Rhodes D, Kim B, Barmak K, Watanabe K, Taniguchi T, Papić Z, Abanin DA, Hone J, Dean CR. Bilayer WSe 2 as a natural platform for interlayer exciton condensates in the strong coupling limit. NATURE NANOTECHNOLOGY 2022; 17:577-582. [PMID: 35437321 DOI: 10.1038/s41565-022-01104-5] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2021] [Accepted: 02/21/2022] [Indexed: 06/14/2023]
Abstract
Exciton condensates (ECs) are macroscopic coherent states arising from condensation of electron-hole pairs1. Bilayer heterostructures, consisting of two-dimensional electron and hole layers separated by a tunnel barrier, provide a versatile platform to realize and study ECs2-4. The tunnel barrier suppresses recombination, yielding long-lived excitons5-10. However, this separation also reduces interlayer Coulomb interactions, limiting the exciton binding strength. Here, we report the observation of ECs in naturally occurring 2H-stacked bilayer WSe2. In this system, the intrinsic spin-valley structure suppresses interlayer tunnelling even when the separation is reduced to the atomic limit, providing access to a previously unattainable regime of strong interlayer coupling. Using capacitance spectroscopy, we investigate magneto-ECs, formed when partially filled Landau levels couple between the layers. We find that the strong-coupling ECs show dramatically different behaviour compared with previous reports, including an unanticipated variation of EC robustness with the orbital number, and find evidence for a transition between two types of low-energy charged excitations. Our results provide a demonstration of tuning EC properties by varying the constituent single-particle wavefunctions.
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Affiliation(s)
- Qianhui Shi
- Department of Physics, Columbia University, New York, NY, USA
- Department of Physics and Astronomy, University of California, Los Angeles, CA, USA
| | - En-Min Shih
- Department of Physics, Columbia University, New York, NY, USA
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
- Department of Physics, Georgetown University, Washington, DC, USA
| | - Daniel Rhodes
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Bumho Kim
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Zlatko Papić
- School of Physics and Astronomy, University of Leeds, Leeds, UK
| | - Dmitry A Abanin
- Department of Theoretical Physics, University of Geneva, Geneva, Switzerland
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Cory R Dean
- Department of Physics, Columbia University, New York, NY, USA.
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3
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Liu Y, Chen R, Zhang Z, Bockrath M, Lau CN, Zhou YF, Yoon C, Li S, Liu X, Dhale N, Lv B, Zhang F, Watanabe K, Taniguchi T, Huang J, Yi M, Oh JS, Birgeneau RJ. Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4I 4 Field Effect Transistors. NANO LETTERS 2022; 22:1151-1158. [PMID: 35077182 DOI: 10.1021/acs.nanolett.1c04264] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Bi4I4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi4I4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi4I4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.
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Affiliation(s)
- Yulu Liu
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Ruoyu Chen
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Zheneng Zhang
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Marc Bockrath
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Yan-Feng Zhou
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Chiho Yoon
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Sheng Li
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Xiaoyuan Liu
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Nikhil Dhale
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Bing Lv
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jianwei Huang
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Ming Yi
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Ji Seop Oh
- Department of Physics, University of California, Berkeley, Berkeley, California 94720, United States
| | - Robert J Birgeneau
- Department of Physics, University of California, Berkeley, Berkeley, California 94720, United States
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4
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Sakanashi K, Krüger P, Watanabe K, Taniguchi T, Kim GH, Ferry DK, Bird JP, Aoki N. Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe 2 van der Waals Heterostructure. NANO LETTERS 2021; 21:7534-7541. [PMID: 34472869 DOI: 10.1021/acs.nanolett.1c01828] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this study, an electrostatically induced quantum confinement structure, so-called quantum point contact, has been realized in a p-type trilayer tungsten diselenide-based van der Waals heterostructure with modified van der Waals contact method with degenerately doped transition metal dichalcogenide crystals. Clear quantized conductance and pinch-off state through the one-dimensional confinement were observed by dual-gating of split gate electrodes and top gate. Conductance plateaus were observed at a step of e2/h in addition to quarter plateaus such as 0.25 × 2e2/h at a finite bias voltage condition indicating the signature of intrinsic spin-polarized quantum point contact.
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Affiliation(s)
- Kohei Sakanashi
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
| | - Peter Krüger
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
| | - Kenji Watanabe
- International Center for Materials Nanoartchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Gil-Ho Kim
- School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea
| | - David K Ferry
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States
| | - Jonathan P Bird
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
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5
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Direct probing of phonon mode specific electron-phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides. Nat Commun 2021; 12:4520. [PMID: 34312387 PMCID: PMC8313722 DOI: 10.1038/s41467-021-24875-2] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2021] [Accepted: 07/13/2021] [Indexed: 11/18/2022] Open
Abstract
Electron–phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report direct probing of phonon mode specific electron–phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron–phonon scatterings involving up to as many as eight individual phonon modes in mono- and bilayer films, among which transverse, longitudinal acoustic and optical, and flexural optical phonons play significant roles in quantum charge flows. Moreover, the layer-number sensitive higher-order inelastic electron–phonon scatterings, which are confirmed to be generic in all four semiconducting layers, can be attributed to differing electronic structures, symmetry, and quantum interference effects during the scattering processes in the ultrathin semiconducting films. Electron–phonon scattering events in solid-state systems determine key physical quantities. Here, the authors probe momentum-conserving single- and two-phonon electron–phonon scattering events involving up to as many as eight individual phonon modes in 2D semiconductors.
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6
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Andersen TI, Scuri G, Sushko A, De Greve K, Sung J, Zhou Y, Wild DS, Gelly RJ, Heo H, Bérubé D, Joe AY, Jauregui LA, Watanabe K, Taniguchi T, Kim P, Park H, Lukin MD. Excitons in a reconstructed moiré potential in twisted WSe 2/WSe 2 homobilayers. NATURE MATERIALS 2021; 20:480-487. [PMID: 33398121 DOI: 10.1038/s41563-020-00873-5] [Citation(s) in RCA: 51] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2020] [Accepted: 11/11/2020] [Indexed: 06/12/2023]
Abstract
Moiré superlattices in twisted van der Waals materials have recently emerged as a promising platform for engineering electronic and optical properties. A major obstacle to fully understanding these systems and harnessing their potential is the limited ability to correlate direct imaging of the moiré structure with optical and electronic properties. Here we develop a secondary electron microscope technique to directly image stacking domains in fully functional van der Waals heterostructure devices. After demonstrating the imaging of AB/BA and ABA/ABC domains in multilayer graphene, we employ this technique to investigate reconstructed moiré patterns in twisted WSe2/WSe2 bilayers and directly correlate the increasing moiré periodicity with the emergence of two distinct exciton species in photoluminescence measurements. These states can be tuned individually through electrostatic gating and feature different valley coherence properties. We attribute our observations to the formation of an array of two intralayer exciton species that reside in alternating locations in the superlattice, and open up new avenues to realize tunable exciton arrays in twisted van der Waals heterostructures, with applications in quantum optoelectronics and explorations of novel many-body systems.
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Affiliation(s)
| | - Giovanni Scuri
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Andrey Sushko
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Kristiaan De Greve
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
- imec, Leuven, Belgium
| | - Jiho Sung
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - You Zhou
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Dominik S Wild
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Ryan J Gelly
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Hoseok Heo
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Damien Bérubé
- Department of Physics, California Institute of Technology, Pasadena, CA, USA
| | - Andrew Y Joe
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Luis A Jauregui
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Physics and Astronomy, UC Irvine, Irvine, CA, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, MA, USA
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Hongkun Park
- Department of Physics, Harvard University, Cambridge, MA, USA.
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA.
| | - Mikhail D Lukin
- Department of Physics, Harvard University, Cambridge, MA, USA.
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7
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Leisgang N, Shree S, Paradisanos I, Sponfeldner L, Robert C, Lagarde D, Balocchi A, Watanabe K, Taniguchi T, Marie X, Warburton RJ, Gerber IC, Urbaszek B. Giant Stark splitting of an exciton in bilayer MoS 2. NATURE NANOTECHNOLOGY 2020; 15:901-907. [PMID: 32778806 DOI: 10.1038/s41565-020-0750-1] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2020] [Accepted: 07/06/2020] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayer TMDs the optical absorption is strong, but the transition energy cannot be tuned as the neutral exciton has essentially no out-of-plane static electric dipole1,2. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is substantially reduced. In this work, we show tuning over 120 meV of interlayer excitons with a high oscillator strength in bilayer MoS2 due to the quantum-confined Stark effect3. We optically probed the interaction between intra- and interlayer excitons as they were energetically tuned into resonance. Interlayer excitons interact strongly with intralayer B excitons, as demonstrated by a clear avoided crossing, whereas the interaction with intralayer A excitons is substantially weaker. Our observations are supported by density functional theory (DFT) calculations, which include excitonic effects. In MoS2 trilayers, our experiments uncovered two types of interlayer excitons with and without in-built electric dipoles. Highly tunable excitonic transitions with large in-built dipoles and oscillator strengths will result in strong exciton-exciton interactions and therefore hold great promise for non-linear optics with polaritons.
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Affiliation(s)
- Nadine Leisgang
- Department of Physics, University of Basel, Basel, Switzerland
| | - Shivangi Shree
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France
| | | | | | - Cedric Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France
| | | | - Andrea Balocchi
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Ibaraki, Japan
| | - Takashi Taniguchi
- International Center for Materials Anorthite, National Institute for Materials Science, Ibaraki, Japan
| | - Xavier Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France
| | | | - Iann C Gerber
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France
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8
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Zhang L, Wang G, Zhang Y, Cao Z, Wang Y, Cao T, Wang C, Cheng B, Zhang W, Wan X, Lin J, Liang SJ, Miao F. Tuning Electrical Conductance in Bilayer MoS 2 through Defect-Mediated Interlayer Chemical Bonding. ACS NANO 2020; 14:10265-10275. [PMID: 32649178 DOI: 10.1021/acsnano.0c03665] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS2 to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS2 lattice, the vanadium-doped monolayer MoS2 device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS2 devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS2 device is drastically enhanced with respect to that of the doped monolayer MoS2 device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3pz orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS2, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.
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Affiliation(s)
- Lili Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yubo Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhipeng Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Yu Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Cong Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Bin Cheng
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Wenqing Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiangang Wan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
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9
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Enaldiev VV, Zólyomi V, Yelgel C, Magorrian SJ, Fal'ko VI. Stacking Domains and Dislocation Networks in Marginally Twisted Bilayers of Transition Metal Dichalcogenides. PHYSICAL REVIEW LETTERS 2020; 124:206101. [PMID: 32501062 DOI: 10.1103/physrevlett.124.206101] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2019] [Accepted: 04/13/2020] [Indexed: 05/27/2023]
Abstract
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop density functional theory parametrized interpolation formulae for interlayer adhesion energies of MoSe_{2}, WSe_{2}, MoS_{2}, and WS_{2}, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles θ^{∘}<θ_{P}^{∘}∼2.5° and θ^{∘}<θ_{AP}^{∘}∼1° for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P and AP bilayers.
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Affiliation(s)
- V V Enaldiev
- National Graphene Institute, University of Manchester, Booth St. E. Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Kotel'nikov Institute of Radio-engineering and Electronics of the Russian Academy of Sciences, 11-7 Mokhovaya St, Moscow 125009, Russia
| | - V Zólyomi
- National Graphene Institute, University of Manchester, Booth St. E. Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Hartree Centre, STFC Daresbury Laboratory, Daresbury WA4 4AD, United Kingdom
| | - C Yelgel
- National Graphene Institute, University of Manchester, Booth St. E. Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Recep Tayyip Erdogan University, Department of Electricity and Energy, Rize 53100, Turkey
| | - S J Magorrian
- National Graphene Institute, University of Manchester, Booth St. E. Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - V I Fal'ko
- National Graphene Institute, University of Manchester, Booth St. E. Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Henry Royce Institute for Advanced Materials, University of Manchester, Manchester M13 9PL, United Kingdom
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