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Ji Z, Zhao Y, Chen Y, Zhu Z, Wang Y, Liu W, Modi G, Mele EJ, Jin S, Agarwal R. Opto-twistronic Hall effect in a three-dimensional spiral lattice. Nature 2024; 634:69-73. [PMID: 39294380 DOI: 10.1038/s41586-024-07949-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 08/14/2024] [Indexed: 09/20/2024]
Abstract
Studies of moiré systems have explained the effect of superlattice modulations on their properties, demonstrating new correlated phases1. However, most experimental studies have focused on a few layers in two-dimensional systems. Extending twistronics to three dimensions, in which the twist extends into the third dimension, remains underexplored because of the challenges associated with the manual stacking of layers. Here we study three-dimensional twistronics using a self-assembled twisted spiral superlattice of multilayered WS2. Our findings show an opto-twistronic Hall effect driven by structural chirality and coherence length, modulated by the moiré potential of the spiral superlattice. This is an experimental manifestation of the noncommutative geometry of the system. We observe enhanced light-matter interactions and an altered dependence of the Hall coefficient on photon momentum. Our model suggests contributions from higher-order quantum geometric quantities to this observation, providing opportunities for designing quantum-materials-based optoelectronic lattices with large nonlinearities.
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Affiliation(s)
- Zhurun Ji
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- Department of Physics and Applied Physics, Stanford University, Stanford, CA, USA
| | - Yuzhou Zhao
- Department of Chemistry, University of Wisconsin-Madison, Madison, WI, USA
| | - Yicong Chen
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Ziyan Zhu
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Yuhui Wang
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Wenjing Liu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Gaurav Modi
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Eugene J Mele
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, USA
| | - Song Jin
- Department of Chemistry, University of Wisconsin-Madison, Madison, WI, USA
| | - Ritesh Agarwal
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA.
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2
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Xiong Y, Rudner MS, Song JCW. Antiscreening and Nonequilibrium Layer Electric Phases in Graphene Multilayers. PHYSICAL REVIEW LETTERS 2024; 133:136901. [PMID: 39392963 DOI: 10.1103/physrevlett.133.136901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 07/16/2024] [Accepted: 08/20/2024] [Indexed: 10/13/2024]
Abstract
Screening is a ubiquitous phenomenon through which the polarization of bound or mobile charges tends to reduce the strengths of electric fields inside materials. Here, we show how photoexcitation can be used as a knob to transform conventional out-of-plane screening into antiscreening-the amplification of electric fields-in multilayer graphene. We find that, by varying the photoexcitation intensity, multiple nonequilibrium screening regimes can be accessed, including near-zero screening, antiscreening, and overscreening (reversing electric fields). Strikingly, at modest continuous wave photoexcitation intensities, the nonequilibrium polarization states become multistable, hosting light-induced ferroelectriclike steady states with nonvanishing out-of-plane polarization (and band gaps) even in the absence of an externally applied displacement field in nominally inversion symmetric stacks. This rich phenomenology reveals a novel paradigm of dynamical quantum matter that we expect will enable a variety of nonequilibrium broken symmetry phases.
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3
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Zhang RW, Cui C, Li R, Duan J, Li L, Yu ZM, Yao Y. Predictable Gate-Field Control of Spin in Altermagnets with Spin-Layer Coupling. PHYSICAL REVIEW LETTERS 2024; 133:056401. [PMID: 39159119 DOI: 10.1103/physrevlett.133.056401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Revised: 01/22/2024] [Accepted: 06/06/2024] [Indexed: 08/21/2024]
Abstract
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control through the electric field is generally more practical, and has become a focal point in the field. Here, we propose a mechanism to realize static and almost uniform effective magnetic field by gate-electric field. Our method employs two-dimensional altermagnets with valley-mediated spin-layer coupling (SLC), in which electronic states display valley-contrasted spin and layer polarization. For the low-energy valley electrons, a uniform gate field is approximately identical to a uniform magnetic field, leading to predictable control of spin. Through symmetry analysis and ab initio calculations, we predict altermagnetic monolayer Ca(CoN)_{2} and its family materials as potential candidates hosting SLC. We show that an almost uniform magnetic field (B_{z}) indeed is generated by gate field (E_{z}) in Ca(CoN)_{2} with B_{z}∝E_{z} in a wide range, and B_{z} reaches as high as about 10^{3} T when E_{z}=0.2 eV/Å. Furthermore, owing to the clean band structure and SLC, one can achieve perfect and switchable spin and valley currents and significant tunneling magnetoresistance in Ca(CoN)_{2} solely using the gate field. Our work provides new opportunities to generate predictable control of spin and design spintronic devices that can be controlled by purely electric means.
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Affiliation(s)
| | - Chaoxi Cui
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Runze Li
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Jingyi Duan
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Lei Li
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
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4
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Zheng H, Zhai D, Xiao C, Yao W. Interlayer Electric Multipoles Induced by In-Plane Field from Quantum Geometric Origins. NANO LETTERS 2024; 24:8017-8023. [PMID: 38899935 DOI: 10.1021/acs.nanolett.4c01657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
We show that interlayer charge transfer in 2D materials can be driven by an in-plane electric field, giving rise to electrical multipole generation in linear and second order in-plane field. The linear and nonlinear effects have quantum geometric origins in the Berry curvature and quantum metric, respectively, defined in extended parameter spaces characteristic of layered materials. We elucidate their symmetry characters and demonstrate sizable dipole and quadrupole polarizations, respectively, in twisted bilayers and trilayers of transition metal dichalcogenides. Furthermore, we show that this effect is strongly enhanced during the topological phase transition tuned by interlayer translation. The effects point to a new electric control on the layer quantum degree of freedom.
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Affiliation(s)
- Huiyuan Zheng
- New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Dawei Zhai
- New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Xiao
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Wang Yao
- New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
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5
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Watanabe H, Yanase Y. Magnetic parity violation and parity-time-reversal-symmetric magnets. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:373001. [PMID: 38899401 DOI: 10.1088/1361-648x/ad52dd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Accepted: 05/31/2024] [Indexed: 06/21/2024]
Abstract
Parity-time-reversal symmetry (PTsymmetry), a symmetry for the combined operations of space inversion (P) and time reversal (T), is a fundamental concept of physics and characterizes the functionality of materials as well asPandTsymmetries. In particular, thePT-symmetric systems can be found in the centrosymmetric crystals undergoing the parity-violating magnetic order which we call the odd-parity magnetic multipole order. While this spontaneous order leavesPTsymmetry intact, the simultaneous violation ofPandTsymmetries gives rise to various emergent responses that are qualitatively different from those allowed by the nonmagneticP-symmetry breaking or by the ferromagnetic order. In this review, we introduce candidates hosting the intriguing spontaneous order and overview the characteristic physical responses. Various off-diagonal and/or nonreciprocal responses are identified, which are closely related to the unusual electronic structures such as hidden spin-momentum locking and asymmetric band dispersion.
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Affiliation(s)
- Hikaru Watanabe
- Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
| | - Youichi Yanase
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
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6
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Li R, Zou X, Bai Y, Chen Z, Huang B, Dai Y, Niu C. Layer-coupled corner states in two-dimensional topological multiferroics. MATERIALS HORIZONS 2024; 11:2242-2247. [PMID: 38421336 DOI: 10.1039/d3mh01266b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
The structural diversity and controllability in two-dimensional (2D) materials offers an intriguing platform for exploring a wide range of topological phenomena. The layer degree of freedom, as a novel technique for material manipulation, requires further investigation regarding its association with topological states. Here, using first-principles calculations and a tight-binding model, we propose a novel mechanism that couples the second-order topological corner states with the layer degree of freedom. By analyzing the edge states, topological indices, and spectra of nanoflakes, we identify ferromagnetic H'-Co2XF2 (X = C, N) as 2D second-order topological insulators with intrinsic ferroelectricity. Moreover, the topological corner states strongly couple with the layer degree of freedom, and, remarkably, ferroelectricity provides a nonvolatile handle to manipulate the layer-polarized corner states. These findings open an avenue for the manipulation of second-order topological states and establish a bridge between ferroelectricity and nontrivial topology.
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Affiliation(s)
- Runhan Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Xiaorong Zou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Yingxi Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Zhiqi Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Chengwang Niu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
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7
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Das K, Ghorai K, Culcer D, Agarwal A. Nonlinear Valley Hall Effect. PHYSICAL REVIEW LETTERS 2024; 132:096302. [PMID: 38489650 DOI: 10.1103/physrevlett.132.096302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 12/16/2023] [Accepted: 01/26/2024] [Indexed: 03/17/2024]
Abstract
The valley Hall effect arises from valley-contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal symmetry, where the linear and second-order charge Hall currents vanish along with the linear valley Hall current. We show that a second-order valley Hall signal emerges from the electric field correction to the Berry curvature, provided a valley-contrasting anisotropic dispersion is engineered. We demonstrate the nonlinear valley Hall effect in tilted massless Dirac fermions in strained graphene and organic semiconductors. Our Letter opens up the possibility of controlling the valley degree of freedom in inversion symmetric systems via nonlinear valleytronics.
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Affiliation(s)
- Kamal Das
- Department of Physics, Indian Institute of Technology, Kanpur-208016, India
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Koushik Ghorai
- Department of Physics, Indian Institute of Technology, Kanpur-208016, India
| | - Dimitrie Culcer
- School of Physics, The University of New South Wales, Sydney 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology, Kanpur-208016, India
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8
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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9
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Kuang X, Pantaleón Peralta PA, Angel Silva-Guillén J, Yuan S, Guinea F, Zhan Z. Optical properties and plasmons in moiré structures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:173001. [PMID: 38232397 DOI: 10.1088/1361-648x/ad1f8c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2023] [Accepted: 01/17/2024] [Indexed: 01/19/2024]
Abstract
The discoveries of numerous exciting phenomena in twisted bilayer graphene (TBG) are stimulating significant investigations on moiré structures that possess a tunable moiré potential. Optical response can provide insights into the electronic structures and transport phenomena of non-twisted and twisted moiré structures. In this article, we review both experimental and theoretical studies of optical properties such as optical conductivity, dielectric function, non-linear optical response, and plasmons in moiré structures composed of graphene, hexagonal boron nitride (hBN), and/or transition metal dichalcogenides. Firstly, a comprehensive introduction to the widely employed methodology on optical properties is presented. After, moiré potential induced optical conductivity and plasmons in non-twisted structures are reviewed, such as single layer graphene-hBN, bilayer graphene-hBN and graphene-metal moiré heterostructures. Next, recent investigations of twist-angle dependent optical response and plasmons are addressed in twisted moiré structures. Additionally, we discuss how optical properties and plasmons could contribute to the understanding of the many-body effects and superconductivity observed in moiré structures.
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Affiliation(s)
- Xueheng Kuang
- Yangtze Delta Industrial Innovation Center of Quantum Science and Technology, Suzhou 215000, People's Republic of China
| | | | - Jose Angel Silva-Guillén
- Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of the Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
| | - Francisco Guinea
- Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain
- Donostia International Physics Center, Paseo Manuel de Lardizábal 4, 20018 San Sebastián, Spain
| | - Zhen Zhan
- Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain
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10
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Li Y, Shang X, Zhou YH, Zheng X. The effect of light-irradiated area on the spin dependent photocurrent in zigzag graphene nanoribbon junctions. Phys Chem Chem Phys 2023; 25:24428-24435. [PMID: 37655683 DOI: 10.1039/d3cp01176c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
In this work, we study the photogalvanic effect of a zigzag graphene nanoribbon junction with a centro-symmetrical structure which consists of 8 zigzag chains by density functional calculations. Specifically, we focus on the cases where the irradiated region is just part of the central region and located at different positions, with an aim to see how the spin dependent photocurrents will change and whether pure spin current can be obtained. It is found that the magnitude of the spin-dependent photocurrents increases with a gradual increase of the irradiated region and pure spin current is achieved when and only when the entire central region is irradiated. In addition, we studied the additive effect in this device to see that if we divide the central region into two parts, whether the sum of the spin current generated by irradiating the two parts individually is equal to that produced when the entire central region is irradiated. It is found that the sum of the spin currents produced by irradiating the two parts individually is smaller than that obtained by irradiating the whole central region, which means that the rule of "1 + 2 = 3" does not hold and the coupling effect between the two parts is important in photocurrent generation.
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Affiliation(s)
- Yuejun Li
- College of Science, East China Jiao Tong University, Nanchang 330013, China.
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210037, China.
| | - Xiaofei Shang
- College of Science, East China Jiao Tong University, Nanchang 330013, China.
| | - Yan-Hong Zhou
- College of Science, East China Jiao Tong University, Nanchang 330013, China.
| | - Xiaohong Zheng
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210037, China.
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11
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Phong VT, Mele EJ. Quantum Geometric Oscillations in Two-Dimensional Flat-Band Solids. PHYSICAL REVIEW LETTERS 2023; 130:266601. [PMID: 37450787 DOI: 10.1103/physrevlett.130.266601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Accepted: 04/21/2023] [Indexed: 07/18/2023]
Abstract
Two-dimensional van der Waals heterostructures can be engineered into artificial superlattices that host flat bands with significant Berry curvature and provide a favorable environment for the emergence of novel electron dynamics. In particular, the Berry curvature can induce an oscillating trajectory of an electron wave packet transverse to an applied static electric field. Though analogous to Bloch oscillations, this novel oscillatory behavior is driven entirely by quantum geometry in momentum space instead of band dispersion. While the current from Bloch oscillations can be localized by increasing field strength, the current from the geometric orbits saturates to a nonzero plateau in the strong-field limit. In nonmagnetic materials, the geometric oscillations are even under inversion of the applied field, whereas the Bloch oscillations are odd, a property that can be used to distinguish these two coexisting effects.
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Affiliation(s)
- Võ Tiến Phong
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - E J Mele
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
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12
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Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
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Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
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13
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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Bhalla P, Das K, Culcer D, Agarwal A. Resonant Second-Harmonic Generation as a Probe of Quantum Geometry. PHYSICAL REVIEW LETTERS 2022; 129:227401. [PMID: 36493457 DOI: 10.1103/physrevlett.129.227401] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 03/06/2022] [Accepted: 10/14/2022] [Indexed: 06/17/2023]
Abstract
Nonlinear responses are actively studied as probes of topology and band geometric properties of solids. Here, we show that second harmonic generation serves as a probe of the Berry curvature, quantum metric, and quantum geometric connection. We generalize the theory of second harmonic generation to include Fermi surface effects in metallic systems, and finite scattering timescale. In doped materials the Fermi surface and Fermi sea cause all second harmonic terms to exhibit resonances, and we identify two novel contributions to the second harmonic signal: a double resonance due to the Fermi surface and a higher-order pole due to the Fermi sea. We discuss experimental observation in the monolayer of time reversal symmetric Weyl semimetal WTe_{2} and the parity-time reversal symmetric topological antiferromagnet CuMnAs.
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Affiliation(s)
- Pankaj Bhalla
- Department of Physics, School of Engineering and Sciences, SRM University AP, Amaravati, 522240, India
- Beijing Computational Science Research Center, Beijing 100193, China
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
| | - Kamal Das
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
| | - Dimitrie Culcer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
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Zuber JW, Zhang C. Twist dependent magneto-optical response in twisted bilayer graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:445501. [PMID: 34375960 DOI: 10.1088/1361-648x/ac1c30] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2021] [Accepted: 08/10/2021] [Indexed: 06/13/2023]
Abstract
By employing a linearised Boltzmann equation, we calculate the magneto-optical properties of twisted bilayer graphene using non-magnetic wave functions. Both transverse and longitudinal responses are calculated up to the second order in applied magnetic field with their twist angle and Fermi level dependence examined. We find that increasing the twist angle increases the transverse metallic response so long as the Fermi level remains below the upper conduction band. Interlayer transitions provide an appreciable enhancement when the Fermi level traverses the gap between the two conduction bands. Interlayer transitions are also responsible for a nonzero anomalous Hall conductivity in this model. As the Fermi level moves towards zero, the longitudinal response begins to dominate and a highly anisotropic negative magneto-resistance is observed.
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Affiliation(s)
- J W Zuber
- School of Physics and Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522, Australia
| | - C Zhang
- School of Physics and Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522, Australia
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