Disorder Dependence of Interface Spin Memory Loss

Ultrafast unidirectional spin Hall magnetoresistance driven by terahertz light field

The ultrafast control of magnetisation states in magnetically ordered systems poses significant technological challenges yet is vital for the development of memory devices that operate at picosecond timescales or terahertz (THz) frequencies. Despite considerable efforts achieving convenient ultrafast readout of magnetic states remains an area of active investigation. For practical applications, energy-efficient and cost-effective electrical detection is highly desirable. In this context, unidirectional spin-Hall magnetoresistance (USMR) has been proposed as a straightforward two-terminal geometry for the electrical detection of magnetisation states in magnetic heterostructures. In this work, we demonstrate that USMR is effective at THz frequencies, enabling picosecond time readouts initiated by light fields. We observe ultrafast USMR in various ferromagnet/heavy metal thin film heterostructures via THz second-harmonic generation. Our findings, along with temperature-dependent measurements of USMR, reveal a substantial contribution from electron-magnon spin-flip scattering, highlighting the potential for all-electrical detection of THz magnon modes.

Enhanced laser-induced single-cycle terahertz generation in a spintronic emitter with a gradient interface

The development of spintronic emitters of broadband terahertz (THz) pulses relies on designing heterostructures in which the processes of laser-driven spin current generation and subsequent spin-to-charge current conversion are the most efficient. The interface between the ferromagnetic and nonmagnetic layers in an emitter is a critical element. In this study, we experimentally examined single-cycle THz pulse generation from a laser-pulse-excited Pt/Co emitter with a 1.2-nm-thick composition-gradient interface between the Pt and Co and compared it with the emission from a conventional Pt/Co structure with an abrupt interface. We found that the gradient interface improved the efficiency of the optics-to-THz conversion by a factor of two in a wide range of optical fluences up to 3 mJ⋅cm-2. This enhancement was caused by a pronounced increase in the transmittance of the laser-driven spin-polarized current through the gradient interface compared with the abrupt interface. Moreover, it was evident that such transmission deteriorated with the laser fluence owing to the spin accumulation effect.

Mitigation of Gilbert Damping in the CoFe/CuOx Orbital Torque System

Charge-spin interconversion processes underpin the generation of spin-orbit torques in magnetic/nonmagnetic bilayers. However, efficient sources of spin currents such as 5d metals are also efficient spin sinks, resulting in a large increase of magnetic damping. Here we show that a partially oxidized 3d metal can generate a strong orbital torque without a significant increase in damping. Measurements of the torque efficiency ξ and Gilbert damping α in CoFe/CuOx and CoFe/Pt indicate that ξ is comparable in the two systems. The increase in damping relative to a single CoFe layer is Δα < 0.002 in CoFe/CuOx and Δα ≈ 0.005-0.02 in CoFe/Pt, depending on CoFe thickness. We ascribe the nonreciprocal relationship between Δα and ξ in CoFe/CuOx to the small orbital-spin current ratio generated by magnetic resonance in CoFe and the lack of an efficient spin sink in CuOx. Our findings provide new perspectives on the efficient excitation of magnetization dynamics via the orbital torque.

Magnetodynamic properties of ultrathin films of Fe[Formula: see text]Sn[Formula: see text]-a topological kagome ferromagnet

Fe[Formula: see text]Sn[Formula: see text] is a topological kagome ferromagnet that possesses numerous Weyl points close to the Fermi energy, which can manifest various unique transport phenomena such as chiral anomaly, anomalous Hall effect, and giant magnetoresistance. However, the magnetodynamic properties of Fe[Formula: see text]Sn[Formula: see text] have not yet been explored. Here, we report, for the first time, the measurements of the intrinsic Gilbert damping constant ([Formula: see text]), and the effective spin mixing conductance (g[Formula: see text]) of Pt/Fe[Formula: see text]Sn[Formula: see text] bilayers for Fe[Formula: see text]Sn[Formula: see text] thicknesses down to 2 nm, for which [Formula: see text] is [Formula: see text], and g[Formula: see text] is [Formula: see text]. The films have a high saturation magnetization, [Formula: see text], and large anomalous Hall coefficient, [Formula: see text]. The large values of g[Formula: see text], together with the topological properties of Fe[Formula: see text]Sn[Formula: see text], make Fe[Formula: see text]Sn[Formula: see text]/Pt bilayers useful heterostructures for the study of topological spintronic devices.

Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

Topological surface state induced spin pumping in sputtered topological insulator (Bi2Te3)–ferromagnet (Co60Fe20B20) heterostructures

Topological insulators with high spin–orbit coupling and helically spin-momentum-locked topological surface states (TSSs) can serve as efficient spin current generators for modern spintronics applications. We used the industrial-friendly DC magnetron sputtering technique to fabricate magnetic heterostructures consisting of Bi2Te3 (BT) as a topological insulator and Co60Fe20B20 (CFB) as a magnetic layer and studied the temperature-dependent spin pumping, utilizing out-of-plane ferromagnetic resonance spectroscopy. These results demonstrate that the effective spin-mixing conductance is significantly affected by the contribution of two-magnon scattering (TMS). It is found that the TMS-free effective spin-mixing conductance increases with decreasing temperature. Additionally, results from magneto-transport measurements indicate that the surface coherence length of BT is in accordance with the temperature-dependent effective spin-mixing conductance. This enhancement of effective mixing conductance correlated with the enhancement in the contribution of the TSSs as evaluated using the weak-anti-localization effect. This study provides a deeper understanding of the temperature-dependent spin dynamics in sputtered BT/CFB heterostructures which can serve as a guide for further exploration of such bilayers for topological-based spintronic applications.

Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic damping

The discovery of magnetic order in atomically-thin van der Waals materials has strengthened the alliance between spintronics and two-dimensional materials. An important use of magnetic two-dimensional materials in spintronic devices, which has not yet been demonstrated, would be for coherent spin injection via the spin-pumping effect. Here, we report spin pumping from Cr₂Ge₂Te₆ into Pt or W and detection of the spin current by inverse spin Hall effect. The magnetization dynamics of the hybrid Cr₂Ge₂Te₆/Pt system are measured, and a magnetic damping constant of ~ 4-10 × 10^-4 is obtained for thick Cr₂Ge₂Te₆ flakes, a record low for ferromagnetic van der Waals materials. Moreover, a high interface spin transmission efficiency (a spin mixing conductance of 2.4 × 10¹⁹/m²) is directly extracted, which is instrumental in delivering spin-related quantities such as spin angular momentum and spin-orbit torque across an interface of the van der Waals system. The low magnetic damping that promotes efficient spin current generation together with high interfacial spin transmission efficiency suggests promising applications for integrating Cr₂Ge₂Te₆ into low-temperature two-dimensional spintronic devices as the source of coherent spin or magnon current.

Spin homojunction with high interfacial transparency for efficient spin-charge conversion

High interfacial transparency is vital to achieve efficient spin-charge conversion for ideal spintronic devices with low energy consumption. However, in traditional ferromagnetic/nonmagnetic heterojunctions, the interfacial Rashba spin-orbit coupling brings about spin memory loss (SML) and two-magnon scattering (TMS), quenching spin current crossing the heterointerfaces. To address the intrinsic deficiency of heterointerface, we design a ferromagnetic FeRh/antiferromagnetic FeRh spin homojunction for efficient spin-charge conversion, verified by a high interfacial transparency of 0.75 and a high spin torque efficiency of 0.34 from spin pumping measurements. First-principles calculations demonstrate that the interfacial electric field of homojunction is two orders of magnitude smaller than that of traditional heterojunction, producing negligible interfacial spin-orbit coupling to drastically reduce SML and TMS. Our spin homojunction exhibits potential and enlightenment for future energy-efficient spintronic devices.

Enhancing the Spin-Orbit Torque Efficiency by the Insertion of a Sub-nanometer β-W Layer

Spin-orbit torque (SOT) efficiency is one of the key issues of spintronics. However, enhancing the SOT efficiency is usually limited by the positive correlation between resistivity and the spin Hall ratio, where a high resistivity often accompanies a large spin Hall ratio. Here, we demonstrate that sub-nanometer β-W intercalation has a considerable impact on the SOT efficiency in α-W (6 nm)/Co (8 nm)/Pt (3 nm) samples. The damping-like SOT efficiency per unit current density, ξ_DL^j, of α-W (5.7 nm)/β-W (0.3 nm)/Co (8 nm)/Pt (3 nm) shows a ∼ 296% enhancement compared to that of the α-W/Co/Pt system. Meanwhile, a resistivity similar to that of α-W and the spin Hall ratio larger than β-W induce a giant damping-like SOT efficiency per applied electric field, ξ_DL^E, which is about 12.1 times larger than that of β-W. Our findings will benefit the SOT devices by reducing energy consumption.

Giant Spin Hall Effect and Spin-Orbit Torques in 5d Transition Metal-Aluminum Alloys from Extrinsic Scattering

The generation of spin currents from charge currents via the spin Hall effect (SHE) is of fundamental and technological interest. Here, some of the largest SHEs yet observed via extrinsic scattering are found in a large class of binary compounds formed from a 5d element and aluminum, with a giant spin Hall angle (SHA) of ≈1 in the compound Os₂₂ Al₇₈ . A critical composition of the 5d element is found at which there is a structural phase boundary between poorly and highly textured crystalline material, where the SHA exhibits its largest value. Furthermore, a systematic increase is found in the spin Hall conductivity (SHC) and SHA at this critical composition as the atomic number of the 5d element is systematically increased. This clearly shows that the SHE and SHC are derived from extrinsic scattering mechanisms related to the potential mismatch between the 5d element and Al. These studies show the importance of extrinsic mechanisms derived from potential mismatch as a route to obtaining large spin Hall angles with high technological impact. Indeed, it is demonstrated that a state-of-the-art racetrack device has a several-fold increased current-induced domain wall efficiency using these materials as compared to prior-art materials.

Atomic Scale Control of Spin Current Transmission at Interfaces

Ferromagnet/heavy metal bilayers represent a central building block for spintronic devices where the magnetization of the ferromagnet can be controlled by spin currents generated in the heavy metal. The efficiency of spin current generation is paramount. Equally important is the efficient transfer of this spin current across the ferromagnet/heavy metal interface. Here, we show theoretically and experimentally that for Ta as heavy metal the interface only partially transmits the spin current while this effect is absent when Pt is used as heavy metal. This is due to magnetic moment reduction at the interface caused by 3d-5d hybridization effects. We show that this effect can be avoided by atomically thin interlayers. On the basis of our theoretical model we conclude that this is a general effect and occurs for all 5d metals with less than half-filled 5d shell.

Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-Based Heterostructures

Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical film thickness and measurement temperature, bimetallic Mn-based alloys and transition-metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM γ-IrMn₃ thin films with coexisting AFM phases into complex exchange coupled MgO(001)/γ-Ni₃Fe/γ-IrMn₃/γ-Ni₃Fe/CoO heterostructures and study the structural, magnetic, and magnetotransport properties in various magnetic field cooling states. In particular, we unveil the impact of rotating the relative orientation of the thermally disordered and reversible AFM moments with respect to the irreversible AFM moments on the magnetic and magnetotransport properties of the exchange coupled heterostructures. We further reveal that the persistence of thermally disordered and reversible AFM moments is crucial for achieving highly tunable magnetic properties and multilevel magnetoresistance states. We anticipate that the presented approach and the heterostructure architecture can be utilized in future spintronic devices to manipulate the thermally disordered and reversible AFM moments at the nanoscale.

Observation of Pure-Spin-Current Diodelike Effect at the Au/Pt Interface

Asymmetric charge transport at the interface of two materials with dissimilar electrical properties, such as metal-semiconductor and p-n junctions, is the fundamental feature behind modern diode and transistor technology. Spin pumping from a ferromagnet into an adjacent nonmagnetic material is a powerful technique to generate pure-spin currents, wherein spin transport is unaccompanied by net charge transport. It is therefore interesting to study pure-spin transport at the interface of two materials with different spin transport properties. Here we demonstrate asymmetric transport of pure-spin currents across an interface of dissimilar nonmagnetic materials Au/Pt. We exploit Py/Au/Pt/Co structures where spin pumping can generate pure-spin current from either Py or Co independently. We find that the transmission of pure-spin current from Au into Pt is twice as efficient as transmission from Pt into Au. Experimental results are interpreted by extending conventional spin-pumping, spin-diffusion theory to include boundary conditions of reflected and transmitted spin current at the Au/Pt interface that are proportional to the established spin chemical potentials on either side of the interface.

Spin-Flip Diffusion Length in 5d Transition Metal Elements: A First-Principles Benchmark

Little is known about the spin-flip diffusion length l_{sf}, one of the most important material parameters in the field of spintronics. We use a density-functional-theory based scattering approach to determine values of l_{sf} that result from electron-phonon scattering as a function of temperature for all 5d transition metal elements. l_{sf} does not decrease monotonically with the atomic number Z but is found to be inversely proportional to the density of states at the Fermi level. By using the same local current methodology to calculate the spin Hall angle Θ_{sH} that characterizes the efficiency of the spin Hall effect, we show that the products ρ(T)l_{sf}(T) and Θ_{sH}(T)l_{sf}(T) are constant.

Rashba Effect in Functional Spintronic Devices

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

Interfacial spin-orbit torques

Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swapping and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.