1
|
Park H, Oh SS, Lee S. Surface potential-adjusted surface states in 3D topological photonic crystals. Sci Rep 2024; 14:7173. [PMID: 38531983 DOI: 10.1038/s41598-024-56894-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Accepted: 03/12/2024] [Indexed: 03/28/2024] Open
Abstract
Surface potential in a topological matter could unprecedentedly localize the waves. However, this surface potential is yet to be exploited in topological photonic systems. Here, we demonstrate that photonic surface states can be induced and controlled by the surface potential in a dielectric double gyroid (DG) photonic crystal. The basis translation in a unit cell enables tuning of the surface potential, which in turn regulates the degree of wave localization. The gradual modulation of DG photonic crystals enables the generation of a pseudomagnetic field. Overall, this study shows the interplay between surface potential and pseudomagnetic field regarding the surface states. The physical consequences outlined herein not only widen the scope of surface states in 3D photonic crystals but also highlight the importance of surface treatments in a photonic system.
Collapse
Affiliation(s)
- Haedong Park
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea.
- School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, UK.
| | - Sang Soon Oh
- School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, UK.
| | - Seungwoo Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea.
- Department of Biomicrosystem Technology, Korea University, Seoul, 02841, Republic of Korea.
- Department of Integrative Energy Engineering and KU Photonics Center, Korea University, Seoul, 02841, Republic of Korea.
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
| |
Collapse
|
2
|
Nie Z, Wang Y, Chen D, Meng S. Unraveling Hidden Charge Density Wave Phases in 1T-TiSe_{2}. PHYSICAL REVIEW LETTERS 2023; 131:196401. [PMID: 38000430 DOI: 10.1103/physrevlett.131.196401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 10/02/2023] [Indexed: 11/26/2023]
Abstract
The unexpected chiral order observed in 1T-TiSe_{2} represents an exciting area to explore chirality in condensed matter, while its microscopic mechanism remains elusive. Here, we have identified three metastable collective modes-the so-called single-q modes-in single layer TiSe_{2}, which originate from the unstable phonon eigenvectors at the zone boundary and break the threefold rotational symmetry. We show that polarized laser pulse is a unique and efficient tool to reconstruct the transient potential energy surface, so as to drive phase transitions between these states. By designing sequent layers with chiral stacking order, we propose a practical means to realize chiral charge density waves in 1T-TiSe_{2}. Further, the constructed chiral structure is predicted to exhibit circular dichroism as observed in recent experiments. These facts strongly indicate the chirality transfer from photons to the electron subsystem, meanwhile being strongly coupled to the lattice degree of freedom. Our work provides new insights into understanding and modulating chirality in quantum materials that we hope will spark further experimental investigation.
Collapse
Affiliation(s)
- Zhengwei Nie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yaxian Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Daqiang Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| |
Collapse
|
3
|
Gooth J, Galeski S, Meng T. Quantum-Hall physics and three dimensions. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:044501. [PMID: 36735956 DOI: 10.1088/1361-6633/acb8c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2022] [Accepted: 02/03/2023] [Indexed: 06/18/2023]
Abstract
The discovery of the quantum Hall effect (QHE) in 1980 marked a turning point in condensed matter physics: given appropriate experimental conditions, the Hall conductivityσxyof a two-dimensional electron system is exactly quantized. But what happens to the QHE in three dimensions (3D)? Experiments over the past 40 years showed that some of the remarkable physics of the QHE, in particular plateau-like Hall conductivitiesσxyaccompanied by minima in the longitudinal resistivityρxx, can also be found in 3D materials. However, since typicallyρxxremains finite and a quantitative relation betweenσxyand the conductance quantume2/hcould not be established, the role of quantum Hall physics in 3D remains unsettled. Following a recent series of exciting experiments, the QHE in 3D has now returned to the center stage. Here, we summarize the leap in understanding of 3D matter in magnetic fields emerging from these experiments.
Collapse
Affiliation(s)
- Johannes Gooth
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
- Physikalisches Institut, Rheinische Friedrich-Wilhelms-Universität, Nußalle 12, 53115 Bonn, Germany
| | - Stanislaw Galeski
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
- Physikalisches Institut, Rheinische Friedrich-Wilhelms-Universität, Nußalle 12, 53115 Bonn, Germany
| | - Tobias Meng
- Institute of Theoretical Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Dresden 01062, Germany
| |
Collapse
|
4
|
Wu W, Shi Z, Du Y, Wang Y, Qin F, Meng X, Liu B, Ma Y, Yan Z, Ozerov M, Zhang C, Lu HZ, Chu J, Yuan X. Topological Lifshitz transition and one-dimensional Weyl mode in HfTe 5. NATURE MATERIALS 2023; 22:84-91. [PMID: 36175521 DOI: 10.1038/s41563-022-01364-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2022] [Accepted: 08/15/2022] [Indexed: 06/16/2023]
Abstract
Landau band crossings typically stem from the intra-band evolution of electronic states in magnetic fields and enhance the interaction effect in their vicinity. Here in the extreme quantum limit of topological insulator HfTe5, we report the observation of a topological Lifshitz transition from inter-band Landau level crossings using magneto-infrared spectroscopy. By tracking the Landau level transitions, we demonstrate that band inversion drives the zeroth Landau bands to cross with each other after 4.5 T and forms a one-dimensional Weyl mode with the fundamental gap persistently closed. The unusual reduction of the zeroth Landau level transition activity suggests a topological Lifshitz transition at 21 T, which shifts the Weyl mode close to the Fermi level. As a result, a broad and asymmetric absorption feature emerges due to the Pauli blocking effect in one dimension, along with a distinctive negative magneto-resistivity. Our results provide a strategy for realizing one-dimensional Weyl quasiparticles in bulk crystals.
Collapse
Affiliation(s)
- Wenbin Wu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Zeping Shi
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Yuhan Du
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Yuxiang Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
| | - Fang Qin
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
| | - Xianghao Meng
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Binglin Liu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Yuanji Ma
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
| | - Zhongbo Yan
- School of Physics, Sun Yat-Sen University, Guangzhou, China
| | - Mykhaylo Ozerov
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, USA
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, China
- Institute of Optoelectronics, Fudan University, Shanghai, China
| | - Xiang Yuan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China.
- School of Physics and Electronic Science, East China Normal University, Shanghai, China.
| |
Collapse
|
5
|
Song W, Yan Z, Ban L, Xie Y, Liu W, Kong J, Li W, Cheng Q, Xu W, Li D. Quantum conductivity in the topological surface state in the SbV 3S 5 kagome lattice. Phys Chem Chem Phys 2022; 24:18983-18991. [PMID: 35917181 DOI: 10.1039/d2cp02085h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We have successfully predicted the local topological bands in the frustrated kagome lattice SbV3S5. An important future research direction is to raise the kagome band with novel co-existing strong nonlinear dispersion and strong cohesion due to the anisotropic inner field of kagome SbV3S5 to the Fermi level. The Z2 topological index of T-invariant systems provides evidence for a σyz near the Fermi level that determines the quantum anomalous Hall state. This shows that the quantum anomalous Hall effect (QAHE) phase of the kagome lattice SbV3S5 has a weak topological stability that is sensitive to weak disorder and field interactions. Neighbouring van Hove singularities near the Fermi level induced a quantum anomalous Hall conductivity and charge density wave platform.
Collapse
Affiliation(s)
- Wei Song
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Zhengxin Yan
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Liying Ban
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - You Xie
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Wei Liu
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Juntao Kong
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Weili Li
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Qian Cheng
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Wuyue Xu
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Dongxin Li
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| |
Collapse
|
6
|
Fang Y, Yang K, Zhang E, Liu S, Jia Z, Zhang Y, Wu H, Xiu F, Huang F. Quasi-1D van der Waals Antiferromagnetic CrZr 4 Te 14 with Large In-Plane Anisotropic Negative Magnetoresistance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200145. [PMID: 35338784 DOI: 10.1002/adma.202200145] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Revised: 03/20/2022] [Indexed: 06/14/2023]
Abstract
The discovery of 2D van der Waals (vdW) magnetic materials is of great significance to explore intriguing 2D magnetic physics and develop innovative spintronic devices. In this work, a new quasi-1D vdW layered compound CrZr4 Te14 is successfully synthesized. Owing to the existence of 1D [CrTe2 ] and [ZrTe3 ] chains along the b-axis, CrZr4 Te14 crystals show strong anisotropy of phonon vibrations, electrical transport, and magnetism. Density functional theory calculations reveal the ferromagnetic (FM) coupling within the [CrTe2 ] chain, while the interchain and interlayer couplings are both weakly antiferromagnetic (AF). Notably, a large intrinsic negative magnetoresistance (nMR) of -56% is achieved at 2 K under 9 T, and the in-plane anisotropic factor of nMR can reach up to 8.2 in the CrZr4 Te14 device. The 1D FM chains and anisotropic nMR effect make CrZr4 Te14 an interesting platform for exploring novel polarization-sensitive spintronics.
Collapse
Affiliation(s)
- Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ke Yang
- College of Science, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
| | - Zehao Jia
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
| | - Yuda Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
| | - Hua Wu
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
- Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, P. R. China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai, 201315, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| |
Collapse
|
7
|
Zhang XX, Nagaosa N. Anisotropic Three-Dimensional Quantum Hall Effect and Magnetotransport in Mesoscopic Weyl Semimetals. NANO LETTERS 2022; 22:3033-3039. [PMID: 35332773 PMCID: PMC9011404 DOI: 10.1021/acs.nanolett.2c00296] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/24/2022] [Revised: 03/08/2022] [Indexed: 06/14/2023]
Abstract
Weyl semimetals are emerging to become a new class of quantum-material platform for various novel phenomena. Especially, the Weyl orbit made from surface Fermi arcs and bulk relativistic states is expected to play a key role in magnetotransport, leading even to a three-dimensional quantum Hall effect (QHE). It is experimentally and theoretically important although yet unclear whether it bears essentially the same phenomenon as the conventional two-dimensional QHE. We discover an unconventional fully three-dimensional anisotropy in the quantum transport under a magnetic field. Strong suppression and even disappearance of the QHE occur when the Hall-bar current is rotated away from being transverse to parallel with respect to the Weyl point alignment, which is attributed to a peculiar absence of conventional bulk-boundary correspondence. Besides, transport along the magnetic field can exhibit a remarkable reversal from negative to positive magnetoresistance. These results establish the uniqueness of this QHE system as a novel three-dimensional quantum matter.
Collapse
Affiliation(s)
- Xiao-Xiao Zhang
- RIKEN
Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Naoto Nagaosa
- RIKEN
Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Department
of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
| |
Collapse
|
8
|
Qin F, Chen R, Lu HZ. Phase transitions in intrinsic magnetic topological insulator with high-frequency pumping. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:225001. [PMID: 35134789 DOI: 10.1088/1361-648x/ac530f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Accepted: 02/08/2022] [Indexed: 06/14/2023]
Abstract
In this work, we investigate the topological phase transitions in an effective model for a topological thin film with high-frequency pumping. In particular, our results show that the circularly polarized light can break the time-reversal symmetry and induce the quantum anomalous Hall insulator (QAHI) phase. Meanwhile, the bulk magnetic moment can also break the time-reversal symmetry. Therefore, it shows rich phase diagram by tuning the intensity of the light and the thickness of the thin film. Using the parameters fitted by experimental data, we give the topological phase diagram of the Cr-doped Bi2Se3thin film, showing that by modulating the strength of the polarized optical field in an experimentally accessible range, there are four different phases: the normal insulator phase, the time-reversal-symmetry-broken quantum spin Hall insulator phase, and two different QAHI phases with opposite Chern numbers. Comparing with the non-doped Bi2Se3, it is found that the interplay between the light and bulk magnetic moment separates the two different QAHI phases with opposite Chern numbers. The results show that an intrinsic magnetic topological insulator with high-frequency pumping is an ideal platform for further exploring various topological phenomena with a spontaneously broken time-reversal symmetry.
Collapse
Affiliation(s)
- Fang Qin
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, People's Republic of China
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui 230026, People's Republic of China
- Department of Physics, National University of Singapore, 117542, Singapore
| | - Rui Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, People's Republic of China
- School of Physics, Southeast University, Nanjing 211189, People's Republic of China
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, People's Republic of China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, People's Republic of China
| |
Collapse
|
9
|
Zhang S, Wu H, Yang L, Zhang G, Xie Y, Zhang L, Zhang W, Chang H. Two-dimensional magnetic atomic crystals. MATERIALS HORIZONS 2022; 9:559-576. [PMID: 34779810 DOI: 10.1039/d1mh01155c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.
Collapse
Affiliation(s)
- Shanfei Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yuanmiao Xie
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Liang Zhang
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| |
Collapse
|
10
|
Chen R, Liu T, Wang CM, Lu HZ, Xie XC. Field-Tunable One-Sided Higher-Order Topological Hinge States in Dirac Semimetals. PHYSICAL REVIEW LETTERS 2021; 127:066801. [PMID: 34420339 DOI: 10.1103/physrevlett.127.066801] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2021] [Accepted: 07/01/2021] [Indexed: 06/13/2023]
Abstract
Recently, higher-order topological matter and 3D quantum Hall effects have attracted a great amount of attention. The Fermi-arc mechanism of the 3D quantum Hall effect proposed to exist in Weyl semimetals is characterized by the one-sided hinge states, which do not exist in all the previous quantum Hall systems, and more importantly, pose a realistic example of the higher-order topological matter. The experimental effort so far is in the Dirac semimetal Cd_{3}As_{2}, where, however, time-reversal symmetry leads to hinge states on both sides of the top and bottom surfaces, instead of the aspired one-sided hinge states. We propose that under a tilted magnetic field, the hinge states in Cd_{3}As_{2}-like Dirac semimetals can be one sided, highly tunable by field direction and Fermi energy, and robust against weak disorder. Furthermore, we propose a scanning tunneling Hall measurement to detect the one-sided hinge states. Our results will be insightful for exploring not only the quantum Hall effects beyond two dimensions, but also other higher-order topological insulators in the future.
Collapse
Affiliation(s)
- Rui Chen
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- School of Physics, Southeast University, Nanjing 211189, China
| | - Tianyu Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Max-Planck-Institut für Physik komplexer Systeme, 01187 Dresden, Germany
| | - C M Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| |
Collapse
|
11
|
Zhao PL, Lu HZ, Xie XC. Theory for Magnetic-Field-Driven 3D Metal-Insulator Transitions in the Quantum Limit. PHYSICAL REVIEW LETTERS 2021; 127:046602. [PMID: 34355953 DOI: 10.1103/physrevlett.127.046602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2021] [Revised: 04/07/2021] [Accepted: 06/17/2021] [Indexed: 06/13/2023]
Abstract
Metal-insulator transitions driven by magnetic fields have been extensively studied in 2D, but a 3D theory is still lacking. Motivated by recent experiments, we develop a scaling theory for the metal-insulator transitions in the strong-magnetic-field quantum limit of a 3D system. By using a renormalization-group calculation to treat electron-electron interactions, electron-phonon interactions, and disorder on the same footing, we obtain the critical exponent that characterizes the scaling relations of the resistivity to temperature and magnetic field. By comparing the critical exponent with those in a recent experiment [F. Tang et al., Nature (London) 569, 537 (2019)NATUAS0028-083610.1038/s41586-019-1180-9], we conclude that the insulating ground state was not only a charge-density wave driven by electron-phonon interactions but also coexisting with strong electron-electron interactions and backscattering disorder. We also propose a current-scaling experiment for further verification. Our theory will be helpful for exploring the emergent territory of 3D metal-insulator transitions under strong magnetic fields.
Collapse
Affiliation(s)
- Peng-Lu Zhao
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, West Building 3, No. 10, Xibeiwang East Road, Haidian District, Beijing 100193, China
| |
Collapse
|
12
|
Galeski S, Ehmcke T, Wawrzyńczak R, Lozano PM, Cho K, Sharma A, Das S, Küster F, Sessi P, Brando M, Küchler R, Markou A, König M, Swekis P, Felser C, Sassa Y, Li Q, Gu G, Zimmermann MV, Ivashko O, Gorbunov DI, Zherlitsyn S, Förster T, Parkin SSP, Wosnitza J, Meng T, Gooth J. Origin of the quasi-quantized Hall effect in ZrTe 5. Nat Commun 2021; 12:3197. [PMID: 34045452 PMCID: PMC8159947 DOI: 10.1038/s41467-021-23435-y] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2021] [Accepted: 04/27/2021] [Indexed: 02/04/2023] Open
Abstract
The quantum Hall effect (QHE) is traditionally considered to be a purely two-dimensional (2D) phenomenon. Recently, however, a three-dimensional (3D) version of the QHE was reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, spectroscopic, thermoelectric and charge transport measurements on such ZrTe5 samples. The measured properties: magnetization, ultrasound propagation, scanning tunneling spectroscopy, and Raman spectroscopy, show no signatures of a Fermi surface instability, consistent with in-field single crystal X-ray diffraction. Instead, a direct comparison of the experimental data with linear response calculations based on an effective 3D Dirac Hamiltonian suggests that the quasi-quantization of the observed Hall response emerges from the interplay of the intrinsic properties of the ZrTe5 electronic structure and its Dirac-type semi-metallic character.
Collapse
Affiliation(s)
- S Galeski
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| | - T Ehmcke
- Institute for Theoretical Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Dresden, Germany
| | - R Wawrzyńczak
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - P M Lozano
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | - K Cho
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - A Sharma
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - S Das
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - F Küster
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - P Sessi
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - M Brando
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - R Küchler
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - A Markou
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - M König
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - P Swekis
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - C Felser
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Y Sassa
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Q Li
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | - G Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA
| | | | - O Ivashko
- Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
| | - D I Gorbunov
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - S Zherlitsyn
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - T Förster
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - S S P Parkin
- Max Planck Institute of Microstructure Physics, Halle, Saale, Germany
| | - J Wosnitza
- Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ct.qmat,, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden, Germany
| | - T Meng
- Institute for Theoretical Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Dresden, Germany
| | - J Gooth
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden, Germany.
| |
Collapse
|