1
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Jhuria K, Ivanov V, Polley D, Zhiyenbayev Y, Liu W, Persaud A, Redjem W, Qarony W, Parajuli P, Ji Q, Gonsalves AJ, Bokor J, Tan LZ, Kanté B, Schenkel T. Programmable quantum emitter formation in silicon. Nat Commun 2024; 15:4497. [PMID: 38802357 PMCID: PMC11130136 DOI: 10.1038/s41467-024-48714-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 05/07/2024] [Indexed: 05/29/2024] Open
Abstract
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.
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Affiliation(s)
- K Jhuria
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - V Ivanov
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Virginia Tech National Security Institute, Blacksburg, VA, USA
| | - D Polley
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Department of Physics, BITS Pilani-Hyderabad Campus, Telangana, India
| | - Y Zhiyenbayev
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - W Liu
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - A Persaud
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - W Redjem
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- College of Nanoscale Science and Engineering, SUNY Albany, Albany, NY, USA
| | - W Qarony
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - P Parajuli
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Q Ji
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - A J Gonsalves
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - J Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - L Z Tan
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - B Kanté
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - T Schenkel
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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2
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Masteghin MG, Gervais T, Clowes SK, Cox DC, Zelyk V, Pattammattel A, Chu YS, Kolev N, Stock TJZ, Curson NJ, Evans PG, Stuckelberger M, Murdin BN. Benchmarking of X-Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms. SMALL METHODS 2024:e2301610. [PMID: 38693080 DOI: 10.1002/smtd.202301610] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 03/25/2024] [Indexed: 05/03/2024]
Abstract
Single impurities in insulators are now often used for quantum sensors and single photon sources, while nanoscale semiconductor doping features are being constructed for electrical contacts in quantum technology devices, implying that new methods for sensitive, non-destructive imaging of single- or few-atom structures are needed. X-ray fluorescence (XRF) can provide nanoscale imaging with chemical specificity, and features comprising as few as 100 000 atoms have been detected without any need for specialized or destructive sample preparation. Presently, the ultimate limits of sensitivity of XRF are unknown - here, gallium dopants in silicon are investigated using a high brilliance, synchrotron source collimated to a small spot. It is demonstrated that with a single-pixel integration time of 1 s, the sensitivity is sufficient to identify a single isolated feature of only 3000 Ga impurities (a mass of just 350 zg). With increased integration (25 s), 650 impurities can be detected. The results are quantified using a calibration sample consisting of precisely controlled numbers of implanted atoms in nanometer-sized structures. The results show that such features can now be mapped quantitatively when calibration samples are used, and suggest that, in the near future, planned upgrades to XRF facilities might achieve single-atom sensitivity.
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Affiliation(s)
- Mateus G Masteghin
- Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
| | - Toussaint Gervais
- Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
| | - Steven K Clowes
- Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
| | - David C Cox
- Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
| | - Veronika Zelyk
- Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
| | - Ajith Pattammattel
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Yong S Chu
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Nikola Kolev
- London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK
| | - Taylor J Z Stock
- London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK
| | - Neil J Curson
- London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Michael Stuckelberger
- Center for X-Ray and Nano Science CXNS, Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607, Hamburg, Germany
| | - Benedict N Murdin
- Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
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3
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van de Stolpe GL, Kwiatkowski DP, Bradley CE, Randall J, Abobeih MH, Breitweiser SA, Bassett LC, Markham M, Twitchen DJ, Taminiau TH. Mapping a 50-spin-qubit network through correlated sensing. Nat Commun 2024; 15:2006. [PMID: 38443361 PMCID: PMC10914733 DOI: 10.1038/s41467-024-46075-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2023] [Accepted: 02/09/2024] [Indexed: 03/07/2024] Open
Abstract
Spins associated to optically accessible solid-state defects have emerged as a versatile platform for exploring quantum simulation, quantum sensing and quantum communication. Pioneering experiments have shown the sensing, imaging, and control of multiple nuclear spins surrounding a single electron spin defect. However, the accessible size of these spin networks has been constrained by the spectral resolution of current methods. Here, we map a network of 50 coupled spins through high-resolution correlated sensing schemes, using a single nitrogen-vacancy center in diamond. We develop concatenated double-resonance sequences that identify spin-chains through the network. These chains reveal the characteristic spin frequencies and their interconnections with high spectral resolution, and can be fused together to map out the network. Our results provide new opportunities for quantum simulations by increasing the number of available spin qubits. Additionally, our methods might find applications in nano-scale imaging of complex spin systems external to the host crystal.
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Affiliation(s)
- G L van de Stolpe
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - D P Kwiatkowski
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - C E Bradley
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - J Randall
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - M H Abobeih
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands
| | - S A Breitweiser
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, 200 South 33rd Street, Philadelphia, PA, 19104, USA
| | - L C Bassett
- Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, 200 South 33rd Street, Philadelphia, PA, 19104, USA
| | - M Markham
- Element Six Innovation, Fermi Avenue, Harwell Oxford, Didcot, Oxfordshire, OX11 0QR, UK
| | - D J Twitchen
- Element Six Innovation, Fermi Avenue, Harwell Oxford, Didcot, Oxfordshire, OX11 0QR, UK
| | - T H Taminiau
- QuTech, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands.
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600, GA Delft, The Netherlands.
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4
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Cilibrizzi P, Arshad MJ, Tissot B, Son NT, Ivanov IG, Astner T, Koller P, Ghezellou M, Ul-Hassan J, White D, Bekker C, Burkard G, Trupke M, Bonato C. Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide. Nat Commun 2023; 14:8448. [PMID: 38114478 PMCID: PMC10730896 DOI: 10.1038/s41467-023-43923-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Accepted: 11/23/2023] [Indexed: 12/21/2023] Open
Abstract
Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S = 1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.
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Affiliation(s)
- Pasquale Cilibrizzi
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
| | - Muhammad Junaid Arshad
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
| | - Benedikt Tissot
- Department of Physics, University of Konstanz, D-78457, Konstanz, Germany
| | - Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83, Linköping, Sweden
| | - Ivan G Ivanov
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83, Linköping, Sweden
| | - Thomas Astner
- Institute for Quantum Optics and Quantum Information (IQOQI), Austrian Academy of Sciences, A-1090, Vienna, Austria
| | - Philipp Koller
- Institute for Quantum Optics and Quantum Information (IQOQI), Austrian Academy of Sciences, A-1090, Vienna, Austria
| | - Misagh Ghezellou
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83, Linköping, Sweden
| | - Jawad Ul-Hassan
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83, Linköping, Sweden
| | - Daniel White
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
| | - Christiaan Bekker
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
| | - Guido Burkard
- Department of Physics, University of Konstanz, D-78457, Konstanz, Germany
| | - Michael Trupke
- Institute for Quantum Optics and Quantum Information (IQOQI), Austrian Academy of Sciences, A-1090, Vienna, Austria.
| | - Cristian Bonato
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom.
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5
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Wells L, Müller T, Stevenson RM, Skiba-Szymanska J, Ritchie DA, Shields AJ. Coherent light scattering from a telecom C-band quantum dot. Nat Commun 2023; 14:8371. [PMID: 38102132 PMCID: PMC10724139 DOI: 10.1038/s41467-023-43757-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Accepted: 11/17/2023] [Indexed: 12/17/2023] Open
Abstract
Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is fundamental for fibre-based network implementations, but Fourier-limited emission and subnatural linewidth photons have so far only been reported from systems operating in the visible to near-infrared wavelength range. Here, we use InAs/InP quantum dots to demonstrate photons with coherence times much longer than the Fourier limit at telecom wavelength via elastic scattering of excitation laser photons. Further, we show that even the inelastically scattered photons have coherence times within the error bars of the Fourier limit. Finally, we make direct use of the minimal attenuation in fibre for these photons by measuring two-photon interference after 25 km of fibre, demonstrating finite interference visibility for photons emitted about 100,000 excitation cycles apart.
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Affiliation(s)
- L Wells
- Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge, CB4 0GZ, UK
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - T Müller
- Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge, CB4 0GZ, UK.
| | - R M Stevenson
- Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge, CB4 0GZ, UK
| | - J Skiba-Szymanska
- Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge, CB4 0GZ, UK
| | - D A Ritchie
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - A J Shields
- Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge, CB4 0GZ, UK
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6
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Xiong Y, Bourgois C, Sheremetyeva N, Chen W, Dahliah D, Song H, Zheng J, Griffin SM, Sipahigil A, Hautier G. High-throughput identification of spin-photon interfaces in silicon. SCIENCE ADVANCES 2023; 9:eadh8617. [PMID: 37792930 PMCID: PMC10550234 DOI: 10.1126/sciadv.adh8617] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Accepted: 08/31/2023] [Indexed: 10/06/2023]
Abstract
Color centers in host semiconductors are prime candidates as spin-photon interfaces for quantum applications. Finding an optimal spin-photon interface in silicon would move quantum information technologies toward a mature semiconducting host. However, the space of possible charged defects is vast, making the identification of candidates from experiments alone extremely challenging. Here, we use high-throughput first-principles computational screening to identify spin-photon interfaces among more than 1000 charged defects in silicon. The use of a single-shot hybrid functional approach is critical in enabling the screening of many quantum defects with a reasonable accuracy. We identify three promising spin-photon interfaces as potential bright emitters in the telecom band: [Formula: see text], [Formula: see text], and [Formula: see text]. These candidates are excited through defect-bound excitons, stressing the importance of such defects in silicon for telecom band operations. Our work paves the way to further large-scale computational screening for quantum defects in semiconductors.
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Affiliation(s)
- Yihuang Xiong
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Céline Bourgois
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | | | - Wei Chen
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Diana Dahliah
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
- Department of Physics, Ah-Najah National University, Nablus, Palestine
| | - Hanbin Song
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Jiongzhi Zheng
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Sinéad M. Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Molecular Foundry Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Alp Sipahigil
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
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7
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Rinner S, Burger F, Gritsch A, Schmitt J, Reiserer A. Erbium emitters in commercially fabricated nanophotonic silicon waveguides. NANOPHOTONICS 2023; 12:3455-3462. [PMID: 38013784 PMCID: PMC10432618 DOI: 10.1515/nanoph-2023-0287] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Accepted: 07/10/2023] [Indexed: 11/29/2023]
Abstract
Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical transitions in the telecommunications frequency band with the potential for second-long coherence time. Here, we show that these emitters can be reliably integrated into commercially fabricated low-loss waveguides. We investigate several integration procedures and obtain ensembles of many emitters with an inhomogeneous broadening of <2 GHz and a homogeneous linewidth of <30 kHz. We further observe the splitting of the electronic spin states in a magnetic field up to 9 T that freezes paramagnetic impurities. Our findings are an important step toward long-lived quantum memories that can be fabricated on a wafer-scale using CMOS technology.
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Affiliation(s)
- Stephan Rinner
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Florian Burger
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Andreas Gritsch
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Jonas Schmitt
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
| | - Andreas Reiserer
- Technical University of Munich, TUM School of Natural Sciences, Physics Department and Munich Center for Quantum Science and Technology (MCQST), James-Franck-Straße 1, 85748Garching, Germany
- Max Planck Institute of Quantum Optics, Quantum Networks Group, Hans-Kopfermann-Straße 1, 85748Garching, Germany
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8
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Poempool T, Aberl J, Clementi M, Spindlberger L, Vukušić L, Galli M, Gerace D, Fournel F, Hartmann JM, Schäffler F, Brehm M, Fromherz T. Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator. OPTICS EXPRESS 2023; 31:15564-15578. [PMID: 37157655 DOI: 10.1364/oe.480281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an absolute minimum of exactly one QD, accurately positioned by lithographic methods relative to the PhCR, and an otherwise flat, a few monolayer thin, Ge wetting layer (WL). With this method, record quality (Q) factors for QD-loaded PhCRs up to Q ∼ 105 are achieved. A comparison with control PhCRs on samples containing a WL but no QDs is presented, as well as a detailed analysis of the dependence of the resonator-coupled emission on temperature, excitation intensity, and emission decay after pulsed excitation. Our findings undoubtedly confirm a single QD in the center of the resonator as a potentially novel photon source in the telecom spectral range.
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9
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Prabhu M, Errando-Herranz C, De Santis L, Christen I, Chen C, Gerlach C, Englund D. Individually addressable and spectrally programmable artificial atoms in silicon photonics. Nat Commun 2023; 14:2380. [PMID: 37185250 PMCID: PMC10130169 DOI: 10.1038/s41467-023-37655-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Accepted: 03/27/2023] [Indexed: 05/17/2023] Open
Abstract
A central goal for quantum technologies is to develop platforms for precise and scalable control of individually addressable artificial atoms with efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related G-center, exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator photonics. We demonstrate the generation, individual addressing, and spectral trimming of G-center artificial atoms in a silicon-on-insulator photonic integrated circuit platform. Focusing on the neutral charge state emission at 1278 nm, we observe waveguide-coupled single photon emission with narrow inhomogeneous distribution with standard deviation of 1.1 nm, excited state lifetime of 8.3 ± 0.7 ns, and no degradation after over a month of operation. In addition, we introduce a technique for optical trimming of spectral transitions up to 300 pm (55 GHz) and local deactivation of single artificial atoms. This non-volatile spectral programming enables alignment of quantum emitters into 25 GHz telecommunication grid channels. Our demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated photonics.
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Affiliation(s)
- Mihika Prabhu
- Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Carlos Errando-Herranz
- Massachusetts Institute of Technology, Cambridge, MA, USA.
- University of Münster, Münster, Germany.
| | - Lorenzo De Santis
- Massachusetts Institute of Technology, Cambridge, MA, USA
- QuTech, Delft University of Technology, Delft, The Netherlands
| | - Ian Christen
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Changchen Chen
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Connor Gerlach
- Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dirk Englund
- Massachusetts Institute of Technology, Cambridge, MA, USA.
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10
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Zhiyenbayev Y, Redjem W, Ivanov V, Qarony W, Papapanos C, Simoni J, Liu W, Jhuria K, Tan LZ, Schenkel T, Kanté B. Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing. OPTICS EXPRESS 2023; 31:8352-8362. [PMID: 36859950 DOI: 10.1364/oe.482311] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.
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11
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Wafer-scale nanofabrication of telecom single-photon emitters in silicon. Nat Commun 2022; 13:7683. [PMID: 36509736 PMCID: PMC9744816 DOI: 10.1038/s41467-022-35051-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Accepted: 11/16/2022] [Indexed: 12/15/2022] Open
Abstract
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
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12
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Optical observation of single spins in silicon. Nature 2022; 607:266-270. [PMID: 35831600 DOI: 10.1038/s41586-022-04821-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2021] [Accepted: 04/28/2022] [Indexed: 11/08/2022]
Abstract
The global quantum internet will require long-lived, telecommunications-band photon-matter interfaces manufactured at scale1. Preliminary quantum networks based on photon-matter interfaces that meet a subset of these demands are encouraging efforts to identify new high-performance alternatives2. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits3. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work, we integrate individually addressable 'T centre' photon-spin qubits in silicon photonic structures and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
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Udvarhelyi P, Somogyi B, Thiering G, Gali A. Identification of a Telecom Wavelength Single Photon Emitter in Silicon. PHYSICAL REVIEW LETTERS 2021; 127:196402. [PMID: 34797141 DOI: 10.1103/physrevlett.127.196402] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2021] [Revised: 08/10/2021] [Accepted: 10/06/2021] [Indexed: 05/28/2023]
Abstract
We identify the exact microscopic structure of the G photoluminescence center in silicon by first-principles calculations with including a self-consistent many-body perturbation method, which is a telecommunication wavelength single photon source. The defect constitutes of C_{s}C_{i} carbon impurities in its C_{s}─Si_{i}─C_{s} configuration in the neutral charge state, where s and i stand for the respective substitutional and interstitial positions in the Si lattice. We reveal that the observed fine structure of its optical signals originates from the athermal rotational reorientation of the defect. We attribute the monoclinic symmetry reported in optically detected magnetic resonance measurements to the reduced tunneling rate at very low temperatures. We discuss the thermally activated motional averaging of the defect properties and the nature of the qubit state.
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Affiliation(s)
- Péter Udvarhelyi
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - Bálint Somogyi
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - Gergő Thiering
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - Adam Gali
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
- Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
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